ASTM F616M-96(2003)

Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)

SCOPE
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.
Note 1—MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.
1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers the measurement of metal-oxide semiconductor (MOSFET) drain leakage current.
This test method is being withdrawn because the committee is not aware of the need to maintain the standard. Reference to the standard will remain available, but at this time, the committee does not wish to actively maintain the standard.
Formerly under the jursidiction of Committee F01 on Electronics and the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects, this test method was withdrawn in December 2009 with no replacement.

General Information

• Status: Withdrawn
• Publication Date: 09-Jun-1996
• Withdrawal Date: 30-Nov-2009
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F616M-96 - Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
• Effective Date: 10-Jun-1996

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information.
Designation:F616M–96 (Reapproved 2003)
Standard Test Method for
Measuring MOSFET Drain Leakage Current (Metric)
This standard is issued under the fixed designation F616M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 4. Summary of Test Method
1.1 This test method covers the measurement of MOSFET 4.1 The drain current of the MOSFET under test is mea-
(Note 1) drain leakage current. suredataspecifieddrainvoltagewiththeMOSFETintheOFF
condition.
NOTE 1—MOS is an acronym for metal-oxide semiconductor; FET is
4.2 Before this test method can be implemented, test con-
an acronym for field-effect transistor.
ditions appropriate for the MOSFET to be measured must be
1.2 This test method is applicable to all enhancement-mode
selected and agreed upon by the parties to the test. Conditions
and depletion-mode MOSFETs. This test method specifies
will vary from one MOSFET type to another and are deter-
positive voltage and current, conventions specifically appli-
mined in part by the intended application. The following items
cable to n-channel MOSFETs. The substitution of negative
are not specified by this test method, and shall be agreed upon
voltage and negative current makes the method directly appli-
between the parties to the test.
cable to p-channel MOSFETs.
4.2.1 Permissible range of ambient temperature.
1.3 This d-c test method is applicable for the range of drain
4.2.2 Draintosourcevoltage V atwhichthemeasurement
DS
voltages greater than 0 V but less than the drain breakdown
is to be made.
voltage.
4.2.3 Gate to source voltage V at which the measurement
GS
1.4 This standard does not purport to address all of the
is to be made. For most MOSFETs, use a gate voltage
safety concerns, if any, associated with its use. It is the
approximately 5 V different from the saturated threshold
responsibility of the user of this standard to establish appro-
voltage, in the direction of lesser drain current.
priate safety and health practices and determine the applica-
NOTE 2—To avoid the possibility of forward biasing the gate protection
bility of regulatory limitations prior to use.
diodes, the gate should not be permitted to have a potential with respect
tothesubstrate(orsource,ifnosubstrateconnectionisprovided)ofasign
2. Referenced Documents
opposite that of the drain potential with respect to the substrate (or
2.1 ASTM Standards:
source), unless the manufacturer’s specifications expressly permit such a
E178 Practice for Dealing With Outlying Observations
condition.
3. Terminology
5. Significance and Use
3.1 Definition:
5.1 The drain leakage current is a basic MOSFETparameter
3.1.1 drain leakage current of a MOSFET—the d-c current
that must be determined for the design and application of
from the drain terminal when the relationship of the gate
discrete MOSFETs and MOS-integrated circuits. The drain
voltage to the threshold voltage is such that the MOSFET is in
leakage current of the MOSFET is utilized in circuit design to
the OFF state.
determine performance attributes such as power dissipation,
noise margin, charge storage time, amplifier effects, etc., of
digital and analog circuitry.
This test method is under the jurisdiction of ASTM Committee F01 on
Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and
Space Radiation Effects. 6. Interferences
Current edition approved June 10, 2003. Published June 2003. Originally
6.1 Care must be taken to prevent electrical voltage over-
approved in 1980. Last previous edition approved in 1996 as F616M – 96. DOI:
stress damage to the gate dielectric as a result of device
10.1520/F0616M-96R03.
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
handling during the leakage current measurement. Under
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
certain conditions, electrostatic discharge from the human
Standards volume information, refer to the standard’s Document Summary page on
body can result in permanent damage to the gate insulator.
the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
F616M–96 (2003)
6.2 Valid drain leakage current data will be obtained only if 7.4.4 Having an output current limit adjustment capable of
the magnitude of the drain voltage applied during the drain limiting the output current to a value equal to the maximum
leakage current measurement is less than the drain-substrate rated drain current (I ) of the MOSFET to be tested.
DSS
junction breakdown voltage. 7.5 Temperature-Measuring Device, capable of measuring
6.3 The high (positive) input of the ammeter (A1) must the temperature in the vicinity of the device under test to an
always be connected to the drain side of the MOSFET, accuracy of 61°C at the temperature specified for the mea-
regardless of the polarity of the device. Note that with such a surement (see 4.2.1).
connection,theammeterwillgivenegativecurrentreadingsfor
n-channel MOSFET’s. The reason for connecting the high
8. Sampling
inputtothedrainsideoftheMOSFETistoreduceerrorsinthe
8.1 This test method determines the properties of a single
measurement of drain current due to meter-leakage currents.
specimen. If sampling procedures are used to select devices for
Electronic ammeters are designed for low internal-leakage
test, the procedures shall be agreed upon between the parties to
operation only when the high input is connected to the
the test.
low-leakage, high-resistance side of the current path.
6.4 The ambient temperature must be maintained within the
9. Procedure
specified range (see 4.2.1).
9.1 Assemble the test circuit shown in Fig. 1 (see 6.3).
6.5 The measurement method described in this test method
9.2 Connect the substrate terminal of the test fixture to the
is valid only if the MOSFET stability is sufficient to prevent
source electrode if a substrate electrode is provided on the
changes in drain leakage current due to bias-temperature stress
MOSFET.
applied during the drain leakage current measurement.
9.3 Turn on the apparatus and allow it to warm up at least
6.6 The MOSFET threshold voltage measurements should
for the period specified by the apparatus manufacturer.
be made under dark conditions when the MOSFET package
9.4 Set the voltage and current controls on voltage sources
admits enough light to increase the apparent leakage current.
VS and VS to zero.
1 2
6.7 Care must be taken that the manufacturer’s specification
9.4.1 Short-circuit the output terminals of VS .
limits on the MOSFET are not exceeded, even for very brief
9.4.2 Adjust the current limit control so that the output
periods,orthecharacteristicsoftheMOSFETmaybechanged.
current of VS is limited to the maximum rated drain curren
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