EN 62276:2013
(Main)Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
IEC 62276:2012 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - terms and definitions are rearranged in accordance with the alphabetical order; - 'reduced LN' is appended to terms and definitions; - 'reduced LT' is appended to terms and definitions; - reduction process is appended to terms and definitions.
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure
La CEI 62276:2012 s'applique à la fabrication de tranches monocristallines de quartz synthétique, de niobate de lithium (LN), de tantalate de lithium (LT), de tétraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS) destinées à être utilisées comme substrats dans la fabrication de résonateurs et de filtres à ondes acoustiques de surface (OAS). Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente: - les termes et définitions sont reclassés dans l'ordre alphabétique; - 'LN réduit' est annexé aux termes et définitions; - 'LT réduit' est annexé aux termes et définitions; - le processus de réduction est annexé aux termes et définitions.
Enokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacija in merilna metoda
Ta mednarodni standard se uporablja za proizvodnjo enokristalnih rezin iz sintetičnega kremena, litijevega niobata (LN), litijevega tantalata (LT), litijevega tetraborata (LBO) in lantanovega galijevega silikata (LGS), ki se uporabljajo kot substrati pri proizvodnji površinskih zvočnovalovnih filtrov in resonatorjev.
General Information
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Standards Content (Sample)
SLOVENSKI STANDARD
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Single crystal wafers for surface acoustic wave (SAW) devices applications -
Specifications and measuring method
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: EN 62276:2013
ICS:
31.140 3LH]RHOHNWULþQHLQ Piezoelectric and dielectric
GLHOHNWULþQHQDSUDYH devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD
EN 62276
NORME EUROPÉENNE
January 2013
EUROPÄISCHE NORM
ICS 31.140 Supersedes EN 62276:2005
English version
Single crystal wafers
for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
(IEC 62276:2012)
Tranches monocristallines pour Einkristall-Wafer für Oberflächenwellen-
applications utilisant des dispositifs à (OFW-)Bauelemente -
ondes acoustiques de surface (OAS) - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2012)
(CEI 62276:2012)
This European Standard was approved by CENELEC on 2012-11-23. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany,
Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland,
Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62276:2013 E
Foreword
The text of document 49/1005/FDIS, future edition 2 of IEC 62276, prepared by IEC TC 49, "Piezoelectric,
dielectric and electrostatic devices and associated materials for frequency control, selection and
detection", was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as
The following dates are fixed:
(dop) 2013-08-23
• latest date by which the document has
to be implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2015-11-23
• latest date by which the national
standards conflicting with the
document have to be withdrawn
This document supersedes EN 62276:2005.
– terms and definitions are rearranged in accordance with the alphabetical order;
– “reduced LN” is appended to terms and definitions;
– “reduced LT” is appended to terms and definitions;
– reduction process is appended to terms and definitions.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent
rights.
Endorsement notice
The text of the International Standard IEC 62276:2012 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 60862-1 NOTE Harmonized as EN 60862-1.
IEC 60862-2 NOTE Harmonized as EN 60862-2.
IEC 60862-3 NOTE Harmonized as EN 60862-3.
IEC 61019-1 NOTE Harmonized as EN 61019-1.
IEC 61019-2 NOTE Harmonized as EN 61019-2.
ISO 4287 NOTE Harmonized as EN ISO 4287.
- 3 - EN 62276:2013
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
IEC 60410 1973 Sampling plans and procedures for inspection - -
by attributes
IEC 60758 2008 Synthetic quartz crystal - Specifications and EN 60758 2009
guidelines for use
IEC 62276 ®
Edition 2.0 2012-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Single crystal wafers for surface acoustic wave (SAW) device applications –
Specifications and measuring methods
Tranches monocristallines pour applications utilisant des dispositifs à ondes
acoustiques de surface (OAS) – Spécifications et méthodes de mesure
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX X
ICS 31.140 ISBN 978-2-83220-433-7
– 2 – 62276 © IEC:2012
CONTENTS
FO R EW O RD . 5
INT R O D UCT IO N . 7
1 Sc op e . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects. 13
3.6 Other terms and definitions . 13
4 Requirements . 15
4.1 Material specification . 15
4.1.1 Synthetic quartz crystal . 15
4.1.2 LN . 15
4.1.3 LT. 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 16
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel density and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance . 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 18
5 Sampling plan . 19
5.1 Sampling . 19
5.2 Sampling frequency . 19
5.3 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 T hic k nes s . 19
6.3 Dimension of OF . 19
6.4 Orientation of OF . 20
6.5 TV5 . 20
6.6 Warp . 20
62276 © IEC:2012 – 3 –
6.7 TTV . 20
6.8 Front surface defects. 20
6.9 Inclusio ns . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 20
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) . 23
10 Measurement of face angle by X-ray .
...
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