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EN IEC 60749-17:2019

(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17: Neutronenbestrahlung

Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 17: Irradiation aux neutrons

L’essai d’irradiation aux neutrons est réalisé pour déterminer la sensibilité des dispositifs à semiconducteurs à la dégradation par perte d’énergie non ionisante (NIEL, Non-Ionizing Energy Loss). L’essai décrit dans le présent document s’applique aux circuits intégrés et aux dispositifs discrets à semiconducteurs, et est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif. Les objectifs de l’essai sont les suivants: a) détecter et mesurer la dégradation des paramètres critiques des dispositifs à semiconducteurs en fonction de la fluence des neutrons; et b) déterminer si des paramètres spécifiés des dispositifs à semiconducteurs sont dans les limites spécifiées après exposition à un niveau spécifié de fluence de neutrons (voir Article 6).

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del: Obsevanje z nevtroni (IEC 60749-17:2019)

Preskus obsevanja z nevtroni se izvaja za določanje dovzetnosti polprevodniških elementov za degradacijo zaradi neionizacijske izgube energije (NIEL). Tukaj opisan preskus se uporablja za integrirana vezja in diskretne polprevodniške elemente in je namenjen za vojaško in aeronavtično uporabo. To je porušitveni preskus.
Cilji tega preskusa so naslednji:
a) zaznavanje in merjenje degradacije kritičnih parametrov polprevodniških elementov kot funkcije fluence nevtronov, in
b) ugotavljanje, ali so določeni parametri polprevodniških elementov znotraj določenih omejitev po izpostavitvi določeni ravni fluence nevtronov (glej 6. točko).

General Information

Status
Published
Publication Date
09-May-2019
Withdrawal Date
01-May-2022
ICS
31.080.01 - Semiconductor devices in general
Technical Committee
CLC/SR 47 - Semiconductor devices
Drafting Committee
IEC/TC 47 - IEC_TC_47
Current Stage
6060 - Document made available - Publishing
Start Date
10-May-2019
Completion Date
10-May-2019
Ref Project
SIST EN IEC 60749-17:2019 - Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2019)

Relations

Replaces
EN 60749-17:2003 - Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
Effective Date
23-Jan-2023

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SLOVENSKI STANDARD
SIST EN IEC 60749-17:2019
01-julij-2019
Nadomešča:
SIST EN 60749-17:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del:
Obsevanje z nevtroni (IEC 60749-17:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron
irradiation (IEC 60749-17:2019)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17:
Neutronenbestrahlung (IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
17: Irradiation aux neutrons (IEC 60749-17:2019)
Ta slovenski standard je istoveten z: EN IEC 60749-17:2019
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN IEC 60749-17:2019 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN IEC 60749-17:2019

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SIST EN IEC 60749-17:2019


EUROPEAN STANDARD EN IEC 60749-17

NORME EUROPÉENNE

EUROPÄISCHE NORM
May 2019
ICS 31.080.01 Supersedes EN 60749-17:2003
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 17: Neutron irradiation
(IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 17: Irradiation aux Prüfverfahren - Teil 17: Neutronenbestrahlung
neutrons (IEC 60749-17:2019)
(IEC 60749-17:2019)
This European Standard was approved by CENELEC on 2019-05-02. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 60749-17:2019 E

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SIST EN IEC 60749-17:2019
EN IEC 60749-17:2019 (E)
European foreword
The text of document 47/2538/FDIS, future edition 2 of IEC 60749-17, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-17:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-02-02
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-05-02
document have to be withdrawn

This document supersedes EN 60749-17:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 60749-17:2019 was approved by CENELEC as a European
Standard without any modification.



2

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SIST EN IEC 60749-17:2019



IEC 60749-17

®


Edition 2.0 2019-03




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Semiconductor devices – Mechanical and climatic test methods –

Part 17: Neutron irradiation




Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 17: Irradiation aux neutrons
















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ELECTROTECHNICAL

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COMMISSION

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ICS 31.080.01 ISBN 978-2-8322-6702-8




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