IEC 60749-6:2017

Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

IEC 60749-6:2017 is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43.
This edition includes the following significant technical changes with respect to the previous edition:
a) additional test conditions;
b) clarification of the applicability of test conditions.

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6: Stockage à haute température

L’IEC 60749-6:2017 a pour objet de soumettre à essai et de déterminer, sur tous les dispositifs électroniques à semiconducteurs, l’effet du stockage à température élevée sans application de contrainte électrique. Cet essai est typiquement utilisé pour déterminer les effets de la durée d’exposition et de la température, dans des conditions de stockage, sur les modes de défaillance déclenchés par la chaleur et la durée de fonctionnement avant défaillance des dispositifs électroniques à semiconducteurs, comprenant les dispositifs à mémoire non volatile (mécanismes de défaillance liés à la conservation de données). Cet essai est considéré comme non destructif mais il convient de le privilégier pour la qualification des dispositifs. Si de tels dispositifs sont livrés, il est nécessaire d’évaluer les effets de cet essai de contrainte fortement accéléré.
Les modes de défaillance déclenchés par la chaleur sont modélisés à partir de l’équation d’Arrhenius pour l’accélération, et des recommandations concernant le choix des températures d’essai et des durées d’exposition peuvent être consultées dans l’IEC 60749‑43.
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
a) conditions d’essai supplémentaires;
b) clarification de l’applicabilité des conditions d’essai.

General Information

• Status: Published
• Publication Date: 02-Mar-2017
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 2 - TC 47/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 24-Mar-2017
• Completion Date: 03-Mar-2017

Relations

• Revises: IEC 60749-6:2002 - Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
• Effective Date: 05-Sep-2023
• Revises: IEC 60749-6:2002/COR1:2003 - Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60749-6 ®
Edition 2.0 2017-03
INTERNATIONAL
STANDARD
Semiconductor devices – Mechanical and climatic test methods –
Part 6: Storage at high temperature

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
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IEC 60749-6 ®
Edition 2.0 2017-03
INTERNATIONAL
STANDARD
Semiconductor devices – Mechanical and climatic test methods –

Part 6: Storage at high temperature

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01 ISBN 978-2-8322-4003-8

– 2 – IEC 60749-6:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
5 Procedure . 5
5.1 Test conditions . 5
5.2 Measurements . 6
5.3 Failure crieria . 6
6 Summary . 7
Bibliography . 8

Table 1 – High temperature storage conditions . 6

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 6: Storage at high temperature

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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...

IEC 60749-6 ®
Edition 2.0 2017-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 6: Storage at high temperature

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 6: Stockage à haute température

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
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copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
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International Standards for all electrical, electronic and related technologies.

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The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
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IEC 60749-6 ®
Edition 2.0 2017-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 6: Storage at high temperature

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 6: Stockage à haute température

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-7382-1

– 2 – IEC 60749-6:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
5 Procedure . 5
5.1 Test conditions . 5
5.2 Measurements . 6
5.3 Failure crieria . 6
6 Summary . 7
Bibliography . 8

Table 1 – High temperature storage conditions . 6

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 6: Storage at high temperature

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-6 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) additional test conditions;
b) clarification of the applicability of test conditions.

– 4 – IEC 60749-6:2017 © IEC 2017
This bilingual version (2019-09) corresponds to the monolingual English version, published in
2017-03.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2347/FDIS 47/2372/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
The French version of this standard has not been voted upon.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 6: Storage at high temperature

1 Scope
The purpose of this part of IEC 60749 is to test and determine the effect on all solid state
electronic devices of storage at elevated temperature without electrical stress applied. This
test is typically used to determine the effects of time and temperature, under storage
conditions, for thermally activated failure methods and time-to-failure of solid state electronic
devices, including non-volatile memory devices (data-retention failure mechanisms). This test
is considered non-destructive but should preferably be used for device qualification. If such
devices are used for delivery, the effects of this highly accelerated stress test will need to be
evaluated.
Thermally activated failure mechanisms are modelled using the Arrhenius equation for
acceleration, and guidance on the selection of test temperatures and durations can be found
in IEC 60749-43.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Test apparatus
The controlled temperature chamber required for this test shall be capable of maintaining the
test temperature within the tolerances specified in Table 1. Electrical equipment shall be
capable of performing the appropriate measurements for the devices being tested, including
writing and verifying the required data retention pattern(s) for non-volatile memories.
5 Procedure
5.1 Test conditions
The devices under test (DUT) shall be subject to continuous storage (except when there is a
requirement in the applicable procurement document to return the DUTs to room ambient for
interim electrical measurements) at one of the temperatur
...