IEC 60749-34:2010

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include:
- the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode;
- information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Part 34: Cycles en puissance

La CEI 60749-34:2010 décrit une méthode d'essai utilisée pour déterminer la résistance d'un dispositif à semiconducteurs aux contraintes thermiques et mécaniques du fait de la dissipation de puissance de la puce à semiconducteur interne et des connecteurs internes. Cela se produit lorsque des polarisations de fonctionnement à basse tension pour la conduction avant (courants de charge) sont périodiquement appliquées et enlevées en causant des variations rapides de température. L'essai de cycles de puissance est destiné à simuler des applications types en électronique de puissance, et est complémentaire à la durée de vie en fonctionnement à haute température (voir CEI 60749-23). L'exposition à cet essai peut ne pas induire les mêmes mécanismes de défaillances que l'exposition aux cycles de température de l'air-air ou à un changement rapide de température utilisant la méthode du bain à deux fluides. Cet essai provoque une usure et est considéré comme destructif. Cette seconde édition annule et remplace la première édition parue en 2004 et constitue une révision technique. Les modifications importantes par rapport à l'édition antérieure comprennent:
- la spécification des conditions serrées pour des cycles en puissances plus accélérés dans le mode de fatigue de soudure de fil;
- des informations indiquant que dans des conditions d'itérations de puissance sévères, des densités de courant élevées dans une métallisation en couche mince de la puce peuvent déclencher des effets d'électromigration à proximité des fils de connexion.

General Information

• Status: Published
• Publication Date: 27-Oct-2010
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 2 - TC 47/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 30-Nov-2010
• Completion Date: 28-Oct-2010

Relations

• Revises: IEC 60749-34:2004 - Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60749-34 ®
Edition 2.0 2010-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 34: Power cycling
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 34: Cycles en puissance

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IEC 60749-34 ®
Edition 2.0 2010-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 34: Power cycling
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 34: Cycles en puissance

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
L
CODE PRIX
ICS 31.080.01 ISBN 978-2-88912-232-5
– 2 – 60749-34 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope and object.5
2 Normative references .5
3 Terms and definitions .5
4 Test apparatus .6
5 Procedure .7
6 Test conditions .7
7 Precautions .8
8 Measurements.9
9 Failure criteria .9
10 Summary.9
Bibliography.10

Figure 1 – Typical load power P and temperature cycle test condition 2.8

Table 1 – Test conditions.8

60749-34 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 34: Power cycling
FOREWORD
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-34 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2004 and constitutes a
technical revision. The significant changes with respect from the previous edition include:
– the specification of tighter conditions for more accelerated power cycling in the wire bond
fatigue mode;
– information that under harsh power cycling conditions high current densities in a thin die
metalization might initiate electromigration effects close to wire bonds.

– 4 – 60749-34 © IEC:2010
The text of this standard is based on the following documents:
FDIS Report on voting
47/2068/FDIS 47/2079/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, under the general title Semiconductor devices –
Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
60749-34 © IEC:2010 – 5 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 34: Power cycling
1 Scope and object
This part of IEC 60749 describes a test method used to determine the resistance of a
semiconductor device to thermal and mechanical stresses due to cycling the power
dissipation of the internal semiconductor die and internal connectors. This happens when low-
voltage operating biases for forward conduction (load currents) are periodically applied and
removed, causing rapid changes of temperature. The power cycling test is intended to
simulate typical applications in power electronics and is complementary to high temperature
operating life (see IEC 60749-23). Exposure to this test may not induce the same failure
mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature
using the two-fluid-baths method. This test causes wear-out and is considered destructive.
NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-2:2000, Semiconductor devices – Discrete devices and integrated circuits – Part 2.
Rectifier diodes
IEC 60747-6:2000, Semiconductor devices – Part 6: Thyristors
IEC 60749-3, Semiconductor devices – Mechanical and climatic test methods – Part 3:
External visual examination
IEC 60749-23, Semiconductor devices – Mechanical and climatic test methods – Part 23: High
temperature operating life
3 Terms and definitions
For the purposes of this document the following terms and definitions apply.
NOTE Further terms and definitions concerning semi-conductor devices are contained in the IEC 60747 and
IEC 60748 series.
3.1
load current
current to which the devices are subjected to produce power loss P
3.2
case temperature
T
c
temperature of the base of the device under test facing the heat sink

– 6 – 60749-34 © IEC:2010
3.3
sink temperature
T
s
temperature of the heat sink measured in close proximity to the device under test
3.4
junction temperature excursion
ΔT
vj
difference between maximum and minimum virtual junction temperature of the device under
test during one power cycle
3.5
case
...