SIST EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - wafer curvature and cantilever beam deflection methods

This part of IEC 62047 specifies the test methods to measure the residual stresses of films
with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer
curvature or cantilever beam deflection methods. The films should be deposited onto a
substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These
methods are used to determine the residual stresses within thin films deposited on substrate
[1]1.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 16: Messverfahren zur Ermittlung der Eigenspannungen in Dünnschichten von MEMS-Bauteilen - Substratkrümmungs- und Biegebalken-Verfahren

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS - Méthodes de la courbure de la plaquette et de déviation de poutre en porte-à-faux

L'IEC 62047-16:2015 définit les méthodes d'essai permettant de mesurer les contraintes résiduelles des films dont l'épaisseur se situe dans la plage de 0,01 μ à 10 μ dans des structures fabriquées de microsystèmes électromécaniques (MEMS) au moyen des méthodes de la courbure de la plaquette ou de déviation de poutre en porte-à-faux.

Polprevodniški elementi - Mikroelektromehanski elementi - 16. del: Preskusne metode za ugotavljanje preostalih mehanskih napetosti v tankih plasteh (filmih) MEMS - Metode z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine

Ta del standarda IEC 62047 določa preskusne metode za merjenje preostalih mehanskih napetosti filmov debeline med 0,01 μm in 10 μm v strukturah MEMS, proizvedenih z metodami z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine. Filmi morajo biti odloženi na substrat z znanimi mehanskimi lastnostmi Youngovega modula in Poissonovega razmerja. Te metode se uporabljajo za določanje preostalih mehanskih napetosti v tankih filmih, odloženih na substratu [1]1.

General Information

• Status: Published
• Publication Date: 13-Aug-2015
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 27-Jul-2015
• Due Date: 01-Oct-2015
• Completion Date: 14-Aug-2015
• Ref Project: EN 62047-16:2015 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 62047-16:2015
01-september-2015
Polprevodniški elementi - Mikroelektromehanski elementi - 16. del: Preskusne
metode za ugotavljanje preostalih mehanskih napetosti v tankih plasteh (filmih)
MEMS - Metode z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for
determining residual stresses of MEMS films - wafer curvature and cantilever beam
deflection methods
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 16: Messverfahren
zur Ermittlung der Eigenspannungen in Dünnschichten von MEMS-Bauteilen -
Substratkrümmungs- und Biegebalken-Verfahren
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16:
Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS -
Méthodes de la courbure de la plaquette et de déviation de poutre en porte-à-faux
Ta slovenski standard je istoveten z: EN 62047-16:2015
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-16:2015 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62047-16:2015

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SIST EN 62047-16:2015


EUROPEAN STANDARD EN 62047-16

NORME EUROPÉENNE

EUROPÄISCHE NORM
July 2015
ICS 31.080.99

English Version
Semiconductor devices - Micro-electromechanical devices - Part
16: Test methods for determining residual stresses of MEMS
films - Wafer curvature and cantilever beam deflection methods
(IEC 62047-16:2015)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 16: Méthodes d'essai pour Mikrosystemtechnik - Teil 16: Messverfahren zur Ermittlung
déterminer les contraintes résiduelles des films de MEMS - der Eigenspannungen in Dünnschichten von MEMS-
Méthodes de la courbure de la plaquette et de déviation de Bauteilen - Substratkrümmungs- und Biegebalken-
poutre en porte-à-faux Verfahren
(IEC 62047-16:2015) (IEC 62047-16:2015)
This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2015 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN 62047-16:2015 E

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SIST EN 62047-16:2015
EN 62047-16:2015
European foreword
The text of document 47F/209/FDIS, future edition 1 of IEC 62047-16, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-16:2015.

The following dates are fixed:
(dop) 2016-01-10
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2018-04-09
standards conflicting with the
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.

Endorsement notice
The text of the International Standard IEC 62047-16:2015 was approved by CENELEC as a European
Standard without any modification.
2

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SIST EN 62047-16:2015
 EN 62047-16:2015

Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant

EN/HD applies.

NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year

IEC 62047-21 -  Semiconductor devices -- Micro- EN 62047-21 -
electromechanical devices -- Part 21: Test
method for Poisson's ratio of thin film MEMS
materials

3

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SIST EN 62047-16:2015

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SIST EN 62047-16:2015




IEC 62047-16

®


Edition 1.0 2015-03




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE
colour

inside










Semiconductor devices – Micro-electromechanical devices –

Part 16: Test methods for determining residual stresses of MEMS films – Wafer

curvature and cantilever beam deflection methods




Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des


films de MEMS – Méthodes de la courbure de la plaquette et de déviation de

poutre en porte-à-faux












INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.99 ISBN 978-2-8322-2294-2



Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62047-16:2015
– 2 – IEC 62047-16:2015 © IEC 2015
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Testing methods . 6
4.1 General . 6
4.2 Wafer curvature method . 6
4.2.1 General . 6
4.2.2 Test apparatus . 7
4.2.3 Measurement procedures . 7
4.2.4 Reports. 7
4.3 Cantilever beam deflection method . 8
4.3.1 General . 8
4.3.2 Test apparatus . 9
4.3.3 Measurement procedures . 9
4.3.4 Reports. 9
Bibliography . 11

Figure 1 – Schematic drawing of compressive residual stress induced curvature after
depositing thin film on substrate. 6
Figure 2 – Scheme for comprehensive residual stress induced curvature . 9

Table 1 – Mandatory details for the test of wafer curvature method . 8
Table 2 – Mandatory details for the report of beam deflection method . 10

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SIST EN 62047-16:2015
IEC 62047-16:2015 © IEC 2015 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 16: Test methods for determining residual stresses of MEMS films –
Wafer curvature and cantilever beam deflection methods

FOREWORD
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