SIST EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - wafer curvature and cantilever beam deflection methods

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 16: Messverfahren zur Ermittlung der Eigenspannungen in Dünnschichten von MEMS-Bauteilen - Substratkrümmungs- und Biegebalken-Verfahren

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS - Méthodes de la courbure de la plaquette et de déviation de poutre en porte-à-faux

L'IEC 62047-16:2015 définit les méthodes d'essai permettant de mesurer les contraintes résiduelles des films dont l'épaisseur se situe dans la plage de 0,01 μ à 10 μ dans des structures fabriquées de microsystèmes électromécaniques (MEMS) au moyen des méthodes de la courbure de la plaquette ou de déviation de poutre en porte-à-faux.

Polprevodniški elementi - Mikroelektromehanski elementi - 16. del: Preskusne metode za ugotavljanje preostalih mehanskih napetosti v tankih plasteh (filmih) MEMS - Metode z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine

Ta del standarda IEC 62047 določa preskusne metode za merjenje preostalih mehanskih napetosti filmov debeline med 0,01 μm in 10 μm v strukturah MEMS, proizvedenih z metodami z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine. Filmi morajo biti odloženi na substrat z znanimi mehanskimi lastnostmi Youngovega modula in Poissonovega razmerja. Te metode se uporabljajo za določanje preostalih mehanskih napetosti v tankih filmih, odloženih na substratu [1]1.

General Information

• Status: Published
• Publication Date: 13-Aug-2015
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 27-Jul-2015
• Due Date: 01-Oct-2015
• Completion Date: 14-Aug-2015
• Ref Project: EN 62047-16:2015 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

Relations

• Refers: SIST EN 62047-21:2014 - Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
• Effective Date: 03-Feb-2026

Overview

SIST EN 62047-16:2015 (equivalent to IEC 62047-16:2015) defines standardized test methods for determining residual stresses in MEMS (micro-electromechanical systems) films. The standard specifies procedures using two widely recognized techniques: the wafer curvature method and the cantilever beam deflection method. These methods are applicable to thin films with thicknesses ranging from 0.01 μm to 10 μm, deposited on substrates with known mechanical properties.

By standardizing measurement processes, SIST EN 62047-16:2015 enables repeatable and comparable assessments of residual stress in MEMS thin films, which is critical for device reliability, performance consistency, and process optimization in semiconductor manufacturing.

Key Topics

• Residual Stress Measurement: Methods for quantifying internal stresses remaining in thin films after the removal of external causes.
• Wafer Curvature Method:
  • Used in wafer-level MEMS fabrication.
  • Relies on measuring the curvature change of a substrate before and after film deposition.
  • Applies Stoney's equation for calculating residual stresses.
• Cantilever Beam Deflection Method:
  • Suitable for chip- or piece-level analysis.
  • Involves measuring the deflection of a cantilever beam after film deposition.
  • Uses modified equations based on beam theory to determine stress.
• Test Apparatus and Procedures:
  • Profilometry, laser scanning, interferometric microscopes, and other non-contact methods used for precise measurement of curvature or deflection.
  • Procedures for obtaining relevant substrate and film parameters (thickness, Young’s modulus, and Poisson’s ratio).
• Documentation and Reporting:
  • Clear requirements for recording parameters used and results obtained, improving traceability and consistency across labs.

Applications

SIST EN 62047-16:2015 has direct practical value in the following areas:

• MEMS device manufacturing: Residual stress in thin films can significantly affect structural integrity and functional performance of MEMS sensors, actuators, and switches. Adhering to standardized measurement methods supports design optimization and quality control.
• Failure Analysis: Variations in residual stress can lead to warping, delamination, or fracture in microfabricated devices. Reliable test methods contribute to effective root cause analysis and yield improvement.
• Process Development: Enables semiconductor process engineers to evaluate the effects of different deposition methods (e.g., sputtering, CVD, evaporation) on film stress, supporting process tuning and material selection.
• Research and Development: Consistent stress measurement methods facilitate comparison of results across institutions and support reproducibility of academic and industrial research on thin-film materials and MEMS devices.
• Incoming Material Inspection: Ensuring that substrate and film suppliers deliver materials within specified residual stress values, enhancing supply chain quality assurance.

Related Standards

The following related standards complement SIST EN 62047-16:2015:

• IEC 62047 Series: Covers various aspects and test methods for micro-electromechanical devices in the semiconductor industry.
• IEC 62047-21: Test method for Poisson's ratio of thin film MEMS materials - relevant for correctly determining substrate properties in residual stress calculations.
• General standards on MEMS and thin films: These may offer additional guidance on materials characterization, fabrication methods, and mechanical property evaluation.

Adoption of these standards ensures harmonized methodologies for residual stress assessment, supporting interoperability, quality, and reliability across international MEMS and semiconductor manufacturing ecosystems.

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Keywords: residual stress measurement, MEMS films, wafer curvature method, cantilever beam deflection, thin film stress, semiconductor devices, IEC 62047-16, SIST EN 62047-16, test methods, micro-electromechanical systems, film thickness, mechanical properties of substrate.

Standards Content (Sample)

SLOVENSKI STANDARD
01-september-2015
Polprevodniški elementi - Mikroelektromehanski elementi - 16. del: Preskusne
metode za ugotavljanje preostalih mehanskih napetosti v tankih plasteh (filmih)
MEMS - Metode z odklanjanjem merilne konzole za merjenje ukrivljenosti rezine
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for
determining residual stresses of MEMS films - wafer curvature and cantilever beam
deflection methods
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 16: Messverfahren
zur Ermittlung der Eigenspannungen in Dünnschichten von MEMS-Bauteilen -
Substratkrümmungs- und Biegebalken-Verfahren
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16:
Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS -
Méthodes de la courbure de la plaquette et de déviation de poutre en porte-à-faux
Ta slovenski standard je istoveten z: EN 62047-16:2015
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN 62047-16

NORME EUROPÉENNE
EUROPÄISCHE NORM
July 2015
ICS 31.080.99
English Version
Semiconductor devices - Micro-electromechanical devices - Part
16: Test methods for determining residual stresses of MEMS
films - Wafer curvature and cantilever beam deflection methods
(IEC 62047-16:2015)
Dispositifs à semiconducteurs - Dispositifs Halbleiterbauelemente - Bauelemente der
microélectromécaniques - Partie 16: Méthodes d'essai pour Mikrosystemtechnik - Teil 16: Messverfahren zur Ermittlung
déterminer les contraintes résiduelles des films de MEMS - der Eigenspannungen in Dünnschichten von MEMS-
Méthodes de la courbure de la plaquette et de déviation de Bauteilen - Substratkrümmungs- und Biegebalken-
poutre en porte-à-faux Verfahren
(IEC 62047-16:2015) (IEC 62047-16:2015)
This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2015 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62047-16:2015 E
European foreword
The text of document 47F/209/FDIS, future edition 1 of IEC 62047-16, prepared by SC 47F
“Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-16:2015.

The following dates are fixed:
(dop) 2016-01-10
• latest date by which the document has to be
implemented at national level by
publication of an identical national
standard or by endorsement
• latest date by which the national (dow) 2018-04-09
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62047-16:2015 was approved by CENELEC as a European
Standard without any modification.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant

EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year

IEC 62047-21 -  Semiconductor devices -- Micro- EN 62047-21 -
electromechanical devices -- Part 21: Test
method for Poisson's ratio of thin film MEMS
materials
IEC 62047-16 ®
Edition 1.0 2015-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 16: Test methods for determining residual stresses of MEMS films – Wafer

curvature and cantilever beam deflection methods

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des

films de MEMS – Méthodes de la courbure de la plaquette et de déviation de

poutre en porte-à-faux
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-2294-2

– 2 – IEC 62047-16:2015 © IEC 2015
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Testing methods . 6
4.1 General . 6
4.2 Wafer curvature method . 6
4.2.1 General . 6
4.2.2 Test apparatus . 7
4.2.3 Measurement procedures . 7
4.2.4 Reports. 7
4.3 Cantilever beam deflection method . 8
4.3.1 General . 8
4.3.2 Test apparatus . 9
4.3.3 Measurement procedures . 9
4.3.4 Reports. 9
Bibliography . 11

Figure 1 – Schematic drawing of compressive residual stress induced curvature after
depositing thin film on substrate. 6
Figure 2 – Scheme for comprehensive residual stress induced curvature . 9

Table 1 – Mandatory details for the test of wafer curvature method . 8
Table 2 – Mandatory details for the report of beam deflection method . 10

IEC 62047-16:2015 © IEC 2015 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 16: Test methods for determining residual stresses of MEMS films –
Wafer curvature and cantilever beam deflection methods

FOREWORD
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