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ASTM F1261M-96

(Test Method)

Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric]

Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric]

SCOPE
1.1 This test method is designed for determining the average electrical width of a narrow thin-film metallization line.
1.2 This test method is intended for measuring thin metallization lines such as are used in microelectronic circuits where the width of the lines may range from micrometres to tenths of micrometres.  
1.3 The test structure used in this test method may be measured while still part of a wafer, or part therefrom, or as part of a test chip bonded to a package and electrically accessible by means of package terminals.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Historical
Publication Date
31-Dec-1995
ICS
31.080.01 - Semiconductor devices in general
Technical Committee
F01 - Electronics
Drafting Committee
F01.11 - Nuclear and Space Radiation Effects
Current Stage
Ref Project

Relations

Replaced By
ASTM F1261M-96(2003) - Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric] (Withdrawn 2009)
Effective Date
10-Jun-1996

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ASTM F1261M-96 - Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric]ASTM F1261M-96 - Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric]
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ASTM F1261M-96 - Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric]
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NOTICE: This standard has either been superseded and replaced by a new version or withdrawn. Contact
ASTM International (www.astm.org) for the latest information.
Designation: F 1261M – 96
METRIC
AMERICAN SOCIETY FOR TESTING AND MATERIALS
100 Barr Harbor Dr., West Conshohocken, PA 19428
Reprinted from the Annual Book of ASTM Standards. Copyright ASTM
Standard Test Method for
Determining the Average Electrical Width of a Straight, Thin-
1
Film Metal Line [Metric]
This standard is issued under the fixed designation F 1261M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope 4. Summary of Test Method
1.1 This test method is designed for determining the average
4.1 This test method uses a cross-bridge test structure that
electrical width of a narrow thin-film metallization line.
has two components: One is a cross, consisting of two
1.2 This test method is intended for measuring thin metal-
perpendicularly intersecting metallization lines, which is used
lization lines such as are used in microelectronic circuits where
to determine the sheet resistance by a van der Pauw method in
the width of the lines may range from micrometres to tenths of
which a forcing current, I , through two adjacent arms to the
1
micrometres.
cross, develops a voltage that is measured using the remaining
1.3 The test structure used in this test method may be
two arms. The other component is a bridge element that
measured while still part of a wafer, or part therefrom, or as
includes the line whose width is to be determined. Two voltage
part of a test chip bonded to a package and electrically
taps contact this line at a known distance from each other. By
accessible by means of package terminals.
forcing a known current, I , through the line and measuring the
2
1.4 This standard does not purport to address all of the
voltage difference beween the voltage taps, the mean width of
safety concerns, if any, associated with its use. It is the
the line can be calculated.
responsibility of the user of this standard to establish appro-
priate safety and health practices and determine the applica-
5. Significance and Use
bility of regulatory limitations prior to use.
5.1 The width of a conductor line is important to ensure
predictable timing performance of the electrical interconnect
2. Referenced Documents
system, to assure control of critical device parameters, and to
2.1 ASTM Standards:
2 control various processes involved in microcircuit manufac-
E 178 Practice for Dealing with Outlying Observations
ture.
F 1260 Test Method for Estimating Electromigration Me-
5.2 The width of a conductor line, with its thickness, defines
dian Time-to-Failure and Sigma of Integrated Circuit
3
the cross-sectional area and therefrom the current density for a
Metallizations
given current. Knowledge about the current density is impor-
3. Terminology
tant in procedures for estimating reliability against degradation
due to electromigration and in the conduct of electromigration
3.1 Definitions of Terms Specific to This Standard:
stress tests to obtain sample estimates of the median-time-to-
3.1.1 electrical linewidth—the width of the line as calcu-
failure and sigma (see Test Method F 1260).
lated by the product of the sheet resistance of the metal film
and the line length, divided by the line resistance.
6. Interferences
3.1.2 metallization—the thin-film metallic conductor used
as electrical interconnects in a microelectronic integrated
6.1 If the four cross-resistance values (in 8.1.8) differ by
circuit.
more than approximately 5 %, when “wafer-level” measure-
3.1.3 test structure—a passive metallization structure, with
ments are made with contact probes at room temperature, then
terminals to permit electrical access, that is fabricated on a
poor electrical contact may be the cause. Poor contacts will
semiconductor wafer by procedures used to manufacture mi-
lead to an erroneous value for the cross resistance as well as for
croelectronic integrated circuits.
the linewidth. When measurements are made at elevated
temperatures, the differences in the four cross-resistance values
will be larger. Good electrical contact will then be indicated
1
This test method is under the jurisdiction of ASTM Committee F-1 on
when the relative values of the cross resistances remain
Electronics and is the direct responsibility of Subcommittee F01.11 on Quality and
Hardness Assurance. approximately the same with subsequent placements of the
Current edition approved June 10, 1996. Published August 1996. Originally
contact probes on the same or similar structures.
published as F 1261 – 89. Last previous edition F 1261 – 95.
2
6.2 Measurements should be conducted in a time that is
Annual Book of ASTM Standards, Vol 14.02.
3
Annual Book of AST
...

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5.1 This practice is important in characterizing the radiation hardness of electronic devices irradiated by neutrons. This characterization makes it feasible to predict some changes in operational properties of irradiated semiconductor devices or electronic systems. To facilitate uniformity of the interpretation and evaluation of results of irradiations by sources of different fluence spectra, it is convenient to reduce the incident neutron fluence from a source to a single parameter—an equivalent monoenergetic neutron fluence—applicable to a particular semiconductor material.  
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5.1 Electronic circuits used in space, military, and nuclear power systems may be exposed to various levels of ionizing radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
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1.8 Displacement damage effects are outside the scope of this guide, as well.  
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5.1 Many modern integrated circuits, power transistors, and other devices experience SEP when exposed to cosmic rays in interplanetary space, in satellite orbits or during a short passage through trapped radiation belts. It is essential to be able to predict the SEP rate for a specific environment in order to establish proper techniques to counter the effects of such upsets in proposed systems. As the technology moves toward higher density ICs, the problem is likely to become even more acute.  
5.2 This guide is intended to assist experimenters in performing ground tests to yield data enabling SEP predictions to be made.
SCOPE
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SCOPE
1.1 This test method determines the change in length on drying of mortar bars containing hydraulic cement and graded standard sand.  
1.2 The values stated in SI units are to be regarded as standard. When combined standards are referenced, the selection of measurement system is at the user’s discretion subject to the requirements of the referenced standard.  
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. Warning—Fresh hydraulic cementitious mixtures are caustic and may cause chemical burns to skin and tissue upon prolonged exposure).2  
1.4 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

  • Standard
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    English language
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  • Standard
    4 pages
    English language
    sale 15% off