ASTM F374-02

Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers the direct measurement of the average sheet resistance of thin layers of silicon with diameters greater than 15.9 mm (0.625 in.) which are formed by epitaxy, diffusion, or implantation onto or below the surface of a circular silicon wafer having the opposite conductivity type from the thin layer to be measured or by the deposition of polysilicon over an insulating layer. Measurements are made at the center of the wafer using a single-configuration of the four-probe, that is, with the current being passed through the outer pins and the resulting potential difference being measured with the inner pins.
1.2 This test method is known to be applicable on films having thickness at least 0.2 m. It can be used to measure sheet resistance in the range 10 to 5000 Ω, inclusive.
1.2.1 The principle of the test method can be extended to cover lower or higher values of sheet resistance; however, the precision of the method has not been evaluated for sheet resistance ranges other than those given in 1.2.
Note 1—The minimum value of the diameter is related to tolerances on the accuracy of the measurement through the geometric correction factor. The minimum layer thickness is related to danger of penetration of the probe tips through the layer during measurement.
1.3 Procedures for preparing the specimen, for measuring its size, and for determining the temperature of the specimen during the measurement are also given. Abbreviated tables of correction factors appropriate to circular geometry are included with the method so that appropriate calculations can be made conveniently.
Note 2—The principles of this test method are also applicable to other semiconductor materials, but neither the appropriate conditions nor the expected precision have been determined. Other geometries can also be measured, but only comparative measurements using similar geometrical conditions should be used unless proper geometrical correction factors are known.
Note 3—Some relaxations of test conditions are mentioned in order to assist in applying the principles of the method to nonreferee applications, for which a complete nonreferee method has not yet been developed. The relaxed test conditions given are consensus conditions only and their effect on measurement precision and accuracy has not been explored.
1.4 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

General Information

• Status: Withdrawn
• Publication Date: 09-Dec-2002
• Withdrawal Date: 09-May-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F374-00a - Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 374 – 02
Standard Test Method for
Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon,
and Ion-implanted Layers Using an In-Line Four-Point Probe
1
with the Single-Configuration Procedure
This standard is issued under the fixed designation F 374; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
measured, but only comparative measurements using similar geometrical
1. Scope
conditions should be used unless proper geometrical correction factors are
1.1 This test method covers the direct measurement of the
known.
average sheet resistance of thin layers of silicon with diameters
NOTE 3—Some relaxations of test conditions are mentioned in order to
greater than 15.9 mm (0.625 in.) which are formed by epitaxy,
assist in applying the principles of the method to nonreferee applications,
diffusion, or implantation onto or below the surface of a for which a complete nonreferee method has not yet been developed. The
relaxed test conditions given are consensus conditions only and their effect
circular silicon wafer having the opposite conductivity type
on measurement precision and accuracy has not been explored.
from the thin layer to be measured or by the deposition of
polysilicon over an insulating layer. Measurements are made at
1.4 The values stated in SI units are to be regarded as the
the center of the wafer using a single-configuration of the standard. The values given in parentheses are for information
four-probe, that is, with the current being passed through the
only.
outer pins and the resulting potential difference being measured 1.5 This standard does not purport to address all of the
with the inner pins.
safety concerns, if any, associated with its use. It is the
1.2 This test method is known to be applicable on films responsibility of the user of this standard to establish appro-
having thickness at least 0.2 μm. It can be used to measure
priate safety and health practices and determine the applica-
sheet resistance in the range 10 to 5000 V, inclusive. bility of regulatory limitations prior to use. Specific hazard
1.2.1 The principle of the test method can be extended to
statements are given in Section 9.
cover lower or higher values of sheet resistance; however, the
2. Referenced Documents
precision of the method has not been evaluated for sheet
resistance ranges other than those given in 1.2. 2.1 ASTM Standards:
D 5127 Guide for Ultra Pure Water Used in the Electronics
NOTE 1—The minimum value of the diameter is related to tolerances on
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and Semiconductor Industry
the accuracy of the measurement through the geometric correction factor.
3
E 1 Specification for ASTM Thermometers
The minimum layer thickness is related to danger of penetration of the
probe tips through the layer during measurement. F 42 Test Method for Conductivity Type of Extrinsic Semi-
4
conducting Materials
1.3 Procedures for preparing the specimen, for measuring
F 1529 Test Method for Sheet Resistance Uniformity
its size, and for determining the temperature of the specimen
Evaluation by In-Line Four-Point Probe with the Dual-
during the measurement are also given. Abbreviated tables of
4
Configuration Procedure
correction factors appropriate to circular geometry are included
2.2 SEMI Standards:
with the method so that appropriate calculations can be made
C3.15 Standard for Nitrogen (N ) in Cylinders 99.9992 %
2
conveniently.
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Quality
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NOTE 2—The principles of this test method are also applicable to other
C28 Specifications and Guidelines for Hydrofluoric Acid
semiconductor materials, but neither the appropriate conditions nor the 5
C31 Specification for Methanol
expected precision have been determined. Other geometries can also be
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This test method is under the jurisdiction of ASTM Committee F01 on
2
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon Annual Book of ASTM Standards, Vol 11.01.
3
Materials and Process Control. Annual Book of ASTM Standards, Vol 14.03.
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Current edition approved Dec. 10, 2002. Published February 2003. Originally Annual Book of ASTM Standards, Vol 10.05.
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approved in 1974 as F 374 – 74 T. Last previous edition approved in 2000 as Available from Semiconductor Equipment and Materials International, 3081
F 374 – 00a. Zanker Road, San Jose, CA 95134 (www.semi.org).
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
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