ASTM F980-10e1

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

SIGNIFICANCE AND USE
5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure. See Practice E722.
SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.  
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.  
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 30-Nov-2010
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F980-10 - Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
• Effective Date: 01-Dec-2010
• Referred By: ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
• Effective Date: 01-Dec-2010
• Referred By: ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 01-Dec-2010

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
´1
Designation: F980 − 10
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
1
Displacement Damage in Silicon Semiconductor Devices
ThisstandardisissuedunderthefixeddesignationF980;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1
ε NOTE—Figure 2 was corrected editorially in October 2014.
1. Scope E265Test Method for Measuring Reaction Rates and Fast-
Neutron Fluences by Radioactivation of Sulfur-32
1.1 This guide defines the requirements and procedures for
E666Practice for CalculatingAbsorbed Dose From Gamma
testing silicon discrete semiconductor devices and integrated
or X Radiation
circuits for rapid-annealing effects from displacement damage
E720Guide for Selection and Use of Neutron Sensors for
resulting from neutron radiation. This test will produce degra-
Determining Neutron Spectra Employed in Radiation-
dation of the electrical properties of the irradiated devices and
Hardness Testing of Electronics
should be considered a destructive test. Rapid annealing of
E721Guide for Determining Neutron Energy Spectra from
displacement damage is usually associated with bipolar tech-
Neutron Sensors for Radiation-Hardness Testing of Elec-
nologies.
tronics
1.1.1 Heavy ion beams can also be used to characterize
2
E722PracticeforCharacterizingNeutronFluenceSpectrain
displacement damage annealing (1) , but ion beams have
Terms of an Equivalent Monoenergetic Neutron Fluence
significant complications in the interpretation of the resulting
for Radiation-Hardness Testing of Electronics
devicebehaviorduetotheassociatedionizingdose.Theuseof
E1854Practice for Ensuring Test Consistency in Neutron-
pulsed ion beams as a source of displacement damage is not
Induced Displacement Damage of Electronic Parts
within the scope of this standard.
E1855Test Method for Use of 2N2222A Silicon Bipolar
1.2 The values stated in SI units are to be regarded as
Transistors as Neutron Spectrum Sensors and Displace-
standard. No other units of measurement are included in this
ment Damage Monitors
standard.
E1894Guide for Selecting Dosimetry Systems for Applica-
1.3 This standard does not purport to address all of the
tion in Pulsed X-Ray Sources
safety concerns, if any, associated with its use. It is the F1032Guide for Measuring Time-Dependent Total-Dose
responsibility of the user of this standard to consult and
Effects in Semiconductor Devices Exposed to Pulsed
4
establish appropriate safety and health practices and deter- Ionizing Radiation (Withdrawn 1994)
mine the applicability of regulatory limitations prior to use.
3. Terminology
2. Referenced Documents
3.1 Definitions of Terms Specific to This Standard:
3
3.1.1 annealing function—the ratio of the change in the
2.1 ASTM Standards:
displacementdamagemetric(asmanifestedindeviceparamet-
E264Test Method for Measuring Fast-Neutron Reaction
ric measurements) as a function of time following a pulse of
Rates by Radioactivation of Nickel
neutrons and the change in the residual late-time displacement
damage metric remaining at the time the initial damage
achieves quasi equilibrium.
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics
3.1.1.1 Discussion—This late-time quasi-equilibrium time
and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space
is sometimes set to a fixed time on the order of approximately
Radiation Effects.
Current edition approved Dec. 1, 2010. Published January 2011. Originally
1000 s, or it is, as inTest Method E1855, set to a displacement
approved in 1986. Last previous edition approved in 2003 as F980M–96(2003).
damage measurement made after low temperature thermal
DOI: 10.1520/F0980-10E01.
2 stabilizing anneal procedure of 80°C for 2 h. Fig. 1 shows an
Theboldfacenumbersinparenthesesrefertothelistofreferencesattheendof
this standard. example of the annealing function for a 2N2907 pnp bipolar
3
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
4
Standards volume information, refer to the standard’s Document Summary page on The last approved version of this historical standard is referenced on
the ASTM website. www.astm.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
´1
F980 − 10
FIG. 1 Example Annealing Function for a 2N2907 Bipolar Transistor
transistor with an operational current of 2 mAduring and after annealing measurements are performed in situ because mea-
the irradiation. The displacement damage metric of int
...

This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
´1
Designation: F980 − 10 F980 − 10
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
1
Displacement Damage in Silicon Semiconductor Devices
This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of original
adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A superscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1
ε NOTE—Figure 2 was corrected editorially in October 2014.
1. Scope
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits
for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the
electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage
is usually associated with bipolar technologies.
2
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant
complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams
as a source of displacement damage is not within the scope of this standard.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of
regulatory limitations prior to use.
2. Referenced Documents
3
2.1 ASTM Standards:
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E1855 Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage
Monitors
E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
F1032 Guide for Measuring Time-Dependent Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing
4
Radiation (Withdrawn 1994)
3. Terminology
3.1 Definitions of Terms Specific to This Standard:
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation
Effects.
Current edition approved Dec. 1, 2010. Published January 2011. Originally approved in 1986. Last previous edition approved in 2003 as F980M – 96(2003). DOI:
10.1520/F0980-10.10.1520/F0980-10E01.
2
The boldface numbers in parentheses refer to the list of references at the end of this standard.
3
For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
4
The last approved version of this historical standard is referenced on www.astm.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
´1
F980 − 10
3.1.1 annealing function—the ratio of the change in the displacement damage metric (as manifested in device parametric
measurements) as a function of time following a pulse of neutrons and the change in the residual late-time displacement damage
metric remaining at the time the initial damage achieves quasi equilibrium.
3.1.1.1 Discussion—
This late-time quasi-equilibrium time is sometimes set to a fixed time on the order of approximately 1000 s, or it is, as in Test
Method E1855, set to a displacement damage measurement made after low
...