ASTM F76-08

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

SIGNIFICANCE AND USE
In order to choose the proper material for producing semiconductor devices, knowledge of material properties such as resistivity, Hall coefficient, and Hall mobility is useful. Under certain conditions, as outlined in the Appendix, other useful quantities for materials specification, including the charge carrier density and the drift mobility, can be inferred.
SCOPE
1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements.  
1.1.1 Test Method A, van der Pauw (1) —This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of  arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier.
1.1.2 Test Method B, Parallelepiped or Bridge-Type—This test method requires a specimen homogeneous in thickness and of specified  shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier.  
1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given.
Note 1—Practice F 418 covers the preparation of gallium arsenide phosphide specimens.  
1.3 The method in Practice F 418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.
1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity.
1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.)
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 14-Jun-2008
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.15 - Compound Semiconductors

Relations

• Replaces: ASTM F76-86(2002) - Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• Effective Date: 15-Jun-2008
• Replaced By: ASTM F76-08(2016) - Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• Effective Date: 01-May-2016

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F76 − 08
StandardTest Methods for
Measuring Resistivity and Hall Coefficient and Determining
1
Hall Mobility in Single-Crystal Semiconductors
ThisstandardisissuedunderthefixeddesignationF76;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 1.4 Interlaboratory tests of these test methods (Section 19)
have been conducted only over a limited range of resistivities
1.1 These test methods cover two procedures for measuring
and for the semiconductors, germanium, silicon, and gallium
the resistivity and Hall coefficient of single-crystal semicon-
arsenide. However, the method is applicable to other semicon-
ductor specimens.These test methods differ most substantially
ductors provided suitable specimen preparation and contacting
in their test specimen requirements.
2
procedures are known. The resistivity range over which the
1.1.1 Test Method A, van der Pauw (1) —This test method
method is applicable is limited by the test specimen geometry
requiresasinglyconnectedtestspecimen(withoutanyisolated
and instrumentation sensitivity.
holes), homogeneous in thickness, but of arbitrary shape. The
contactsmustbesufficientlysmallandlocatedattheperiphery
1.5 The values stated in acceptable metric units are to be
of the specimen. The measurement is most easily interpreted
regarded as the standard. The values given in parentheses are
foranisotropicsemiconductorwhoseconductionisdominated
for information only. (See also 3.1.4.)
by a single type of carrier.
1.6 This standard does not purport to address all of the
1.1.2 Test Method B, Parallelepiped or Bridge-Type—This
safety concerns, if any, associated with its use. It is the
testmethodrequiresaspecimenhomogeneousinthicknessand
responsibility of the user of this standard to establish appro-
of specified shape. Contact requirements are specified for both
priate safety and health practices and determine the applica-
the parallelepiped and bridge geometries. These test specimen
bility of regulatory limitations prior to use.
geometries are desirable for anisotropic semiconductors for
which the measured parameters depend on the direction of
2. Referenced Documents
current flow. The test method is also most easily interpreted
when conduction is dominated by a single type of carrier.
3
2.1 ASTM Standards:
1.2 These test methods do not provide procedures for D1125Test Methods for Electrical Conductivity and Resis-
shaping, cleaning, or contacting specimens; however, a proce- tivity of Water
dure for verifying contact quality is given.
E2554Practice for Estimating and Monitoring the Uncer-
tainty of Test Results of a Test Method Using Control
NOTE 1—Practice F418 covers the preparation of gallium arsenide
Chart Techniques
phosphide specimens.
F26Test Methods for Determining the Orientation of a
4
1.3 The method in Practice F418 does not provide an
Semiconductive Single Crystal (Withdrawn 2003)
interpretation of the results in terms of basic semiconductor
F43Test Methods for Resistivity of Semiconductor Materi-
properties (for example, majority and minority carrier mobili- 4
als (Withdrawn 2003)
ties and densities). Some general guidance, applicable to
F47Test Method for Crystallographic Perfection of Silicon
certain semiconductors and temperature ranges, is provided in
4
by Preferential Etch Techniques
theAppendix. For the most part, however, the interpretation is
F418Practice for Preparation of Samples of the Constant
left to the user.
Composition Region of Epitaxial GalliumArsenide Phos-
4
phide for Hall Effect Measurements (Withdrawn 2008)
1
These test methods are under the jurisdiction of ASTM Committee F01 on
Electronics and are the direct responsibility of Subcommittee F01.15 on Compound
3
Semiconductors. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved June 15, 2008. Published August 2008. Originally contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
approved in 1967. Last previous edition approved in 2002 as F76–86(02). DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/F0076-08. the ASTM website.
2 4
Theboldfacenumbersinparenthesesrefertothelistofreferencesattheendof The last approved version of this historical standard is referenced on
these test methods. www.astm.org.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
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F76−08
2.2 SEMI Standard: 5.1.1 Photoconductive and photovoltaic effects can seri-
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C1Specifications for Reagents ously influence the o
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This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:F 76–86 (Reapproved 2002) Designation:F 76–08
Standard Test Methods for
Measuring Resistivity and Hall Coefficient and Determining
1
Hall Mobility in Single-Crystal Semiconductors
ThisstandardisissuedunderthefixeddesignationF76;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor
specimens. These test methods differ most substantially in their test specimen requirements.
2
1.1.1 Test Method A, van der Pauw (1) —This test method requires a singly connected test specimen (without any isolated
holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of
the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a
single type of carrier.
1.1.2 Test Method B, Parallelepiped or Bridge-Type —This test method requires a specimen homogeneous in thickness and of
specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen
geometriesaredesirableforanisotropicsemiconductorsforwhichthemeasuredparametersdependonthedirectionofcurrentflow.
The test method is also most easily interpreted when conduction is dominated by a single type of carrier.
1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for
verifying contact quality is given.
NOTE 1—Practice F418 covers the preparation of gallium arsenide phosphide specimens.
1.3 The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties
(forexample,majorityandminoritycarriermobilitiesanddensities).Somegeneralguidance,applicabletocertainsemiconductors
and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user.
1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and
for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors
provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is
applicable is limited by the test specimen geometry and instrumentation sensitivity.
1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for
information only. (See also 3.1.4.)
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
3
2.1 ASTM Standards:
D1125 Test Methods for Electrical Conductivity and Resistivity of Water
E177Practice for Use of the Terms Precision and Bias in ASTM Test Methods 2554 Practice for Estimating and Monitoring
the Uncertainty of Test Results of a Test Method in a Single Laboratory Using a Control Sample Program
F26 Test Methods for Determining the Orientation of a Semiconductive Single Crystal
F43 Test Methods for Resistivity of Semiconductor Materials
4
F47 Test Method for Crystallographic Perfection of Silicon by Preferential Etch Techniques
1
These test methods are under the jurisdiction of ASTM Committee F01 on Electronics and are the direct responsibility of Subcommittee F01.15 on Compound
Semiconductors .
Current edition approved May 10, 2002. Published December 1986. Originally published as F76–67T. Last previous edition F76–84.
Current edition approved June 15, 2008. Published August 2008. Originally approved in 1967. Last previous edition approved in 2002 as F76–86(02).
2
The boldface numbers in parentheses refer to the list of references at the end of these test methods.
3
ForreferencedASTMstandards,visittheASTMwebsite,www.astm.org,[e-mail] Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
4
Available from Semiconductor Equipment and Materials Institute, 625 Ellis St., Suite 212, Moun
...