EN IEC 60749-18:2019

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 18: Ionisierende Strahlung (Gesamtdosis)

Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 18: Rayonnements ionisants (dose totale)

IEC 60749-18:2019 est disponible sous forme de IEC 60749-18:2019 RLV qui contient la Norme internationale et sa version Redline, illustrant les modifications du contenu technique depuis l'édition précédente.L’IEC 60749-18:2019 présente une procédure d’essai permettant de définir les exigences pour soumettre à essai des circuits intégrés à semiconducteurs sous boîtier et des dispositifs discrets à semiconducteurs, concernant les effets des rayonnements ionisants (dose totale) provenant d’une source de rayons gamma au cobalt-60 (60Co). D’autres sources de rayonnements appropriées peuvent être utilisées. Le présent document ne concerne que les irradiations continues et ne s’applique pas aux irradiations pulsées. Il est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif. Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente: - mises à jour apportées aux paragraphes afin de mieux aligner la méthode d’essai avec la méthode 1019 du document MIL-STD 883J, comprenant l’utilisation de l’essai de sensibilité accrue au faible débit de dose (ELDRS); - ajout d’une bibliographie, comprenant les normes ASTM correspondant à la présente méthode d’essai.

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 18. del: Ionizirajoče sevanje (skupni odmerek) (IEC 60749-18:2019)

Ta del standarda IEC 60749 vsebuje preskusni postopek za določanje zahtev za preskušanje pakiranih polprevodniških integriranih vezij in diskretnih polprevodniških elementov, potrebnih za ugotavljanje učinkov ionizirajočega sevanja (skupni odmerek) iz vira gama žarkov kobalta-60 (60Co). Uporabiti je mogoče tudi druge primerne vire sevanja. V tem postopku so predstavljeni štirje preskusi: a) standardni preskus obsevanja pri sobni temperaturi; b) preskus obsevanja pri povišani temperaturi/kriogeni temperaturi; c) preskus pospešenega žarjenja; d) preskus povečane občutljivosti na majhne odmerke (ELDRS). Preskus pospešenega žarjenja ocenjuje, kako pomembni so učinki ionizirajočega sevanja na elemente pri nizkih odmerkih ali nekaterih drugih vrstah uporabe, kjer je učinek na elemente odvisen od časa. Preskus ELDRS določa, ali se naprave z bipolarnimi linearnimi komponentami občutneje poškodujejo zaradi sevanja z majhnimi odmerki. Dokument obravnava samo enakomerno obsevanje in se ne uporablja za impulzno obsevanje. Namenjen je za vojaško uporabo in uporabo v vesolju. Preskus v dokumentu lahko povzroči resno poslabšanje električnih lastnosti obsevanih naprav in se zato obravnava kot porušitveni preskus.

General Information

• Status: Published
• Publication Date: 30-May-2019
• Withdrawal Date: 14-May-2022
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 31-May-2019
• Completion Date: 31-May-2019
• Ref Project: SIST EN IEC 60749-18:2019 - Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) (IEC 60749-18:2019)

Relations

• Replaces: EN 60749-18:2003 - Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)
• Effective Date: 23-Jan-2023

Standards Content (Sample)

SLOVENSKI STANDARD
01-september-2019
Nadomešča:
SIST EN 60749-18:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 18. del:
Ionizirajoče sevanje (skupni odmerek) (IEC 60749-18:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing
radiation (total dose) (IEC 60749-18:2019)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 18:
Ionisierende Strahlung (Gesamtdosis) (IEC 60749-18:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
18: Rayonnements ionisants (dose totale) (IEC 60749-18:2019)
Ta slovenski standard je istoveten z: EN IEC 60749-18:2019
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60749-18

NORME EUROPÉENNE
EUROPÄISCHE NORM
May 2019
ICS 31.080.01 Supersedes EN 60749-18:2003
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 18: Ionizing radiation (total dose)
(IEC 60749-18:2019)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 18: Rayonnements Prüfverfahren - Teil 18: Ionisierende Strahlung
ionisants (dose totale) (Gesamtdosis)
(IEC 60749-18:2019) (IEC 60749-18:2019)
This European Standard was approved by CENELEC on 2019-05-15. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-18:2019 E

European foreword
The text of document 47/2539/FDIS, future edition 2 of IEC 60749-18, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-18:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-02-15
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-05-15
document have to be withdrawn
This document supersedes EN 60749-18:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 60749-18:2019 was approved by CENELEC as a European
Standard without any modification.

IEC 60749-18 ®
Edition 2.0 2019-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 18: Ionizing radiation (total dose)

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 18: Rayonnements ionisants (dose totale)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-6755-4

– 2 – IEC 60749-18:2019 © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus . 8
4.1 Choice of apparatus . 8
4.2 Radiation source . 8
4.3 Dosimetry system . 8
4.4 Electrical test instruments . 8
4.5 Test circuit board(s) . 8
4.6 Cabling . 9
4.7 Interconnect or switching system . 9
4.8 Environmental chamber . 9
4.9 Irradiation temperature chamber . 9
5 Procedure . 9
5.1 Test plan . 9
5.2 Sample selection and handling . 9
5.3 Burn-in . 10
5.4 Dosimetry measurements . 10
5.5 Lead/aluminium (Pb/Al) container . 10
5.6 Radiation level(s) . 10
5.7 Radiation dose rate . 10
5.7.1 Radiation dose rate determination . 10
5.7.2 Condition A . 11
5.7.3 Condition B . 11
5.7.4 Condition C . 11
5.7.5 Condition D . 11
5.7.6 Condition E . 11
5.8 Temperature requirements . 11
5.8.1 Room temperature radiation . 11
5.8.2 Elevated temperature irradiation . 11
5.8.3 Cryogenic temperature irradiation . 12
5.9 Electrical performance measurements . 12
5.10 Test conditions . 12
5.10.1 Choice of test conditions. 12
5.10.2 In-flux testing . 12
5.10.3 Remote testing . 12
5.10.4 Bias and loading conditions . 13
5.11 Post-irradiation procedure . 13
5.12 Extended room temperature annealing test . 14
5.12.1 Choice of annealing test . 14
5.12.2 Need to perform an extended room temperature annealing test . 14
5.12.3 Extended room temperature annealing test procedure . 14
5.13 MOS accelerated annealing test . 15
5.13.1 Choice of MOS accelerated annealing test . 15

IEC 60749-18:2019 © IEC 2019 – 3 –
5.13.2 Need to perform accelerated annealing test . 15
5.13.3 Accelerated annealing test procedure . 16
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with
intended application dose rates less than 0,5 Gy(Si)/s . 16
5.14.1 Need to perform ELDRS testing . 16
5.14.2 Determination of whether a part exhibits ELDRS. 17
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions
for production or lot acceptance testing . 17
5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or
BiCMOS linear or mixed-signal devices . 18
5.15 Test report . 18
6 Summary . 18
Bibliography . 21

Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital
bipolar devices. 19
Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices . 20

– 4 – IEC 60749-18:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)

FOREWORD
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