EN IEC 60749-34-1:2025
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 34-1: Leistungszyklusprüfung für Leistungshalbleitermodule
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 34-1: Essai de cycles en puissance pour modules de puissance à semiconducteurs
L’IEC 60749-34-1:2025 décrit une méthode d’essai utilisée pour déterminer la capacité des modules de puissance à semiconducteurs à résister aux contraintes thermiques et mécaniques du fait du cyclage de la dissipation de puissance des semiconducteurs internes et des connecteurs internes. Elle est basée sur l’IEC 60749‑34, mais est développée spécifiquement pour les modules de puissance à semiconducteurs, y compris les transistors bipolaires à grille isolée (IGBT), les transistors à effet de champ à structure métal-oxyde-semiconducteur (MOSFET), les diodes et les thyristors. En cas de demande d’un client pour une utilisation individuelle ou une ligne directrice spécifique à une application (par exemple la ligne directrice AQG 324 de l’ECPE), les détails de la méthode d’essai peuvent être basés sur ces exigences s’ils s’écartent du contenu du présent document. Cet essai provoque une usure et est considéré comme destructif.
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 34-1. del: Preskus močnostnega polprevodniškega modula s cikliranjem električnega napajanja
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
oSIST prEN IEC 60749-34-1:2024
01-februar-2024
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 34-1. del:
Preskus močnostnega polprevodniškega modula s cikliranjem električnega
napajanja
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power
cycling test for power semiconductor module
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 34
-1: Essai de cycles en puissance pour modules de puissance à semiconducteurs
Ta slovenski standard je istoveten z: prEN IEC 60749-34-1:2023
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
oSIST prEN IEC 60749-34-1:2024 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
oSIST prEN IEC 60749-34-1:2024
oSIST prEN IEC 60749-34-1:2024
47/2823/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60749-34-1 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2023-12-22 2024-03-15
SUPERSEDES DOCUMENTS:
47/2759/CD, 47/2784B/CC
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:
Other TC/SCs are requested to indicate their interest, if any,
in this CDV to the secretary.
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TITLE:
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for
power semiconductor module
PROPOSED STABILITY DATE: 2029
NOTE FROM TC/SC OFFICERS:
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
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oSIST prEN IEC 60749-34-1:2024
IEC CDV 60749-34-1 Ed.1 © IEC 2023 – 2 – 47/2823/CDV
2 CONTENTS
4 FOREWORD . 4
5 INTRODUCTION . 6
6 1 Scope . 7
7 2 Normative references . 7
8 3 Terms and definitions . 7
9 4 Test apparatus and structure of DUT . 9
10 5 Procedure . 11
11 5.1 General . 11
12 5.2 Determination of Tvj,min, Tvj,max and Rthjc . 13
13 5.2.1 General . 13
14 5.2.2 Online temperature measurement . 13
15 5.2.3 Temperature calculation method . 14
16 6 Test conditions . 14
17 6.1 General . 14
18 6.2 Power cycling test (short-time test) . 15
19 6.3 Power cycling test (long-time test) . 15
20 6.4 Test conditions and objectives . 15
21 6.4.1 Certification test . 15
22 6.4.2 Lifetime model validation test . 15
23 7 Measurements . 16
24 8 Failure criteria . 16
25 Annex A (informative) Estimation of the power cycling capability . 18
26 A.1 Simple Weibull regression method (the “mean of m method”) . 18
27 A.1.1 General . 18
28 A.1.2 Improve estimation accuracy under small sample size conditions . 18
29 A.1.3 lifetime estimation using the “mean of m method” . 18
30 A.1.4 Estimation of the power cycling capability . 19
31 A.2 Least square regression method . 20
32 Bibliography . 24
34 Figure 1 – Example of the basic structure of a power semiconductor module (schematic
35 diagram) (case type module for industrial use) . 10
36 Figure 2 – A basic test circuit for the power cycling test (for IGBT module) . 10
37 Figure 3 – A basic test circuit for power MOSFET module . 11
38 Figure 4 – A basic test circuit for diode module . 11
39 Figure 5 – A basic test circuit for Thyristor module . 11
40 Figure 6 – A basic circuit of 6-in-1 IGBT module. 12
41 Figure 7 – A temperature change profile and on/off cycle of the power cycling test (short -time)
42 12
oSIST prEN IEC 60749-34-1:2024
IEC CDV 60749-34-1 Ed.1 © IEC 2023 – 3 – 47/2823/CDV
43 Figure 8 – A temperature change profile and on/off cycle of the power cycling test (long- time)
44 13
45 Figure A.1 – Lifetime estimation by the mean of m method . 19
46 Figure A.2 – Power cycling capability in the power cycling test (short-time) . 20
47 Figure A.3 – Power cycling capability in the power cycling test (long-time) . 20
48 Figure A.4 – Power cycling tests at a minimum of 2 ΔT conditions . 21
49 Figure A.5 – Curve fitting by the regression analysis and determination of the parameter of the
50 lifetime model . 22
51 Figure A.6 – Normalization of the number of cycles to one ΔT and T by the N =f(ΔT, T)-
norm norm f
52 model . 22
53 Figure A.7 – Fit procedure for the Weibull graph for the normalized cycle numbers . 22
54 Figure A.8 – Deduction of the lifetime curve for the product that crosses the specified failure
55 rate percentage x . 23
57 Table 1 – Test conditions . 14
58 Table 2 – Failure criteria for long-time and short-time tests . 16
59 Table A.1 – The sample size N for power cycling tests . 18
oSIST prEN IEC 60749-34-1:2024
IEC CDV 60749-34-1 Ed.1 © IEC 2023 – 4 – 47/2823/CDV
63 INTERNATIONAL ELECTROTECHNICAL COMMISSION
64 ____________
66 SEMICONDUCTOR DEVICES –
67 MECHANICAL AND CLIMATIC TEST METHODS –
69 Part 34-1: Power cycling test for power semiconductor module
72 FOREWORD
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oSIST prEN IEC 60749-34-1:2024
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