EN 60749-28:2017

Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level

IEC 60749-28:2017(E) establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model (CDM) - Device Level

Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé par contact direct (DC-CDM)

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 28. del: Preskušanje občutljivosti na elektrostatično razelektritev (ESD) - Model z elektrostatično nabitim elementom (CDM) - Raven elementa (IEC 60749-28:2017)

Ta del standarda IEC 60749 določa standardni postopek za preskušanje, ocenjevanje in razvrščanje naprav ter mikrovezij glede na občutljivost na poškodbe in degradacijo, ki so posledica izpostavljenosti določenim induciranim elektrostatičnim razelektritvam (ESD) modelov z elektrostatično nabitim elementom (CMD). Vse pakirane polprevodniške naprave, tankoplastne filme, površinske zvočnovalovne naprave (SAW), optoelektronske naprave, hibridna integrirana vezja (HIC) in veččipne module (MCM), ki vsebujejo katero koli od teh naprav, je treba oceniti v skladu s tem dokumentom. Za izvajanje preskusov so naprave sestavljene v paket, podoben tistemu, ki se pričakuje pri končni uporabi. Ta dokument za model z elektrostatično nabitim elementom se ne uporablja za preskusne naprave za razelektritvene modele z vtičnico. Ta dokument opisuje metodo z induciranim poljem. Alternativna metoda, tj. metoda z neposrednim stikom, je opisana v dodatku I.
Namen tega dokumenta je določiti preskusno metodo, ki bo ponovila napake modela z elektrostatično nabitim elementom (CMD) ter zagotovila zanesljive in ponovljive preskusne rezultate elektrostatične izpraznitve modela z elektrostatično nabitim elementom pri vseh preskusnih napravah ne glede na vrsto naprave. Ponovljivi podatki bodo omogočili natančne opredelitve in primerjave ravni občutljivosti na elektrostatične izpraznitve modela z elektrostatično nabitim elementom.

General Information

• Status: Published
• Publication Date: 29-Jun-2017
• Withdrawal Date: 01-May-2020
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 30-Jun-2017
• Completion Date: 30-Jun-2017
• Ref Project: SIST EN 60749-28:2017 - Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)

Relations

• Replaced By: EN IEC 60749-28:2022 - Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
• Effective Date: 23-Jan-2023

Standards Content (Sample)

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)31.080.01Polprevodniški elementi (naprave) na splošnoSemiconductor devices in generalICS:Ta slovenski standard je istoveten z:EN 60749-28:2017SIST EN 60749-28:2017en01-oktober-2017SIST EN 60749-28:2017SLOVENSKI
STANDARD
EUROPEAN STANDARD NORME EUROPÉENNE EUROPÄISCHE NORM
EN 60749-28
June 2017 ICS 31.080.01
English Version
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)
Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé par contact direct (DC-CDM) (IEC 60749-28:2017)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model (CDM) - Device Level (IEC 60749-28:2017) This European Standard was approved by CENELEC on 2017-05-02. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17,
B-1000 Brussels © 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 60749-28:2017 E SIST EN 60749-28:2017

The following dates are fixed: • latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2018-02-02
• latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2020-05-02
Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice The text of the International Standard IEC 60749-28:2017 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated:
IEC 60749-26 NOTE Harmonized as EN 60749-26. SIST EN 60749-28:2017

IEC 60749-28 Edition 1.0 2017-03 INTERNATIONAL STANDARD
Semiconductor devices – Mechanical and climatic test methods –
Part 28: Electrostatic discharge (ESD) sensitivity testing – Charged device
model (CDM) – device level
INTERNATIONAL ELECTROTECHNICAL COMMISSION
ICS 31.080.01
ISBN 978-2-8322-4139-4
– 2 – IEC 60749-28:2017 © IEC 2017 CONTENTS FOREWORD . 5 INTRODUCTION . 7 1 Scope . 8 2 Normative references . 8 3 Terms and definitions . 8 4 Required equipment . 9 4.1 CDM ESD tester . 9 4.1.1 General . 9 4.1.2 Current-sensing element . 10 4.1.3 Ground plane . 10 4.1.4 Field plate/field plate dielectric layer . 10 4.1.5 Charging resistor . 11 4.2 Waveform measurement equipment . 11 4.2.1 General . 11 4.2.2 Cable assemblies . 11 4.2.3 Equipment for high-bandwidth waveform measurement . 11 4.2.4 Equipment for 1,0 GHz waveform measurement . 11 4.3 Verification modules (metal discs) . 11 4.4 Capacitance meter . 11 4.5 Ohmmeter . 12 5 Periodic tester qualification, waveform records, and waveform verification requirements . 12 5.1 Overview of required CDM tester evaluations . 12 5.2 Waveform capture hardware . 12 5.3 Waveform capture setup . 12 5.4 Waveform capture procedure . 12 5.5 CDM tester qualification/requalification procedure . 13 5.5.1 CDM tester qualification/requalification procedure . 13 5.5.2 Conditions requiring CDM tester qualification/requalification . 13 5.5.3 1 GHz oscilloscope correlation with high bandwidth oscilloscope . 14 5.6 CDM tester quarterly and routine waveform verification procedure . 14 5.6.1 Quarterly waveform verification procedure . 14 5.6.2 Routine waveform verification procedure . 14 5.7 Waveform characteristics . 14 5.8 Documentation . 16 5.9 Procedure for evaluating full CDM tester charging of a device . 16 6 CDM ESD testing requirements and procedures . 17 6.1 Device handling . 17 6.2 Test requirements . 17 6.2.1 Test temperature and humidity . 17 6.2.2 Device test . 17 6.3 Test procedures . 17 6.4 CDM test recording / reporting guidelines . 18 7 CDM classification criteria . 18 Annex A (normative)
Verification module (metal disc) specifications and cleaning guidelines for verification modules and testers . 19 SIST EN 60749-28:2017

IEC 60749-28:2017 © IEC 2017 – 3 –
A.1 Tester verification modules and field plate dielectric . 19 A.2 Care of verification modules . 19 Annex B (normative)
Capacitance measurement of verification modules (metal discs) sitting on a tester field plate dielectric . 20 Annex C (informative)
CDM test hardware and metrology improvements . 21 Annex D (informative)
CDM tester electrical schematic . 23 Annex E (informative)
Sample oscilloscope setup and waveform . 24 E.1 General . 24 E.2 Settings for the 1 GHz bandwidth oscilloscope . 24 E.3 Settings for the high-bandwidth oscilloscope . 24 E.4 Setup . 24 E.5 Sample waveforms from a 1 GHz oscilloscope . 24 E.6 Sample waveforms from an 8 GHz oscilloscope . 25 Annex F (informative)
Field-induced CDM tester discharge procedures . 27 F.1 General . 27 F.2 Single discharge procedure . 27 F.3 Dual discharge procedure . 27 Annex G (informative)
Waveform verification procedures . 29 G.1 Factor/offset adjustment method . 29 G.2 Software voltage adjustment method. 32 G.3 Example parameter recording tables . 34 Annex H (informative)
Determining the appropriate charge delay
for full charging of a large module or device . 36 H.1 General . 36 H.2 Procedure for charge delay determination . 36 Annex I (informative)
Electrostatic discharge (ESD) sensitivity testing direct contact charged device model (DC-CDM) . 38 I.1 General . 38 I.2 Standard test module . 38 I.3 Test equipment (CDM simulator) . 38 I.3.1 Test equipment design. 38 I.3.2 DUT (device under test) support . 38 I.3.3 Metal bar/board . 39 I.3.4 Equipment setup . 39 I.4 Verification of test equipment . 39 I.4.1 General description of verification test equipment . 39 I.4.2 Instruments for measurement . 41 I.4.3 Verification of test equipment, using a current probe . 41 I.5 Test procedure . 42 I.5.1 Initial measurement . 42 I.5.2 Tests . 42 I.5.3 Intermediate and final measurement . 43 I.6 Failure criteria . 43 I.7 Classification criteria . 43 I.8 Summary . 43 Bibliography .
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