EN 62047-9:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 9: Prüfverfahren zur Festigkeit von Full-Wafer-Bondverbindungen in der Mikrosystemtechnik (MEMS)

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

La CEI 62047-9:2011 décrit une méthode de mesure de la résistance de collage de deux plaquettes, le type de processus de liaison, par exemple le collage par fusion de deux plaquettes de silicium, le collage anodique d'une plaquette de silicium et d'une plaquette de verre, etc., et la taille de la structure applicable pendant le traitement ou l'assemblage de systèmes microélectromécaniques (MEMS). L'épaisseur de plaquette applicable est dans la gamme comprise entre 10 ohmm et plusieurs millimètres. Le contenu du corrigendum de mars 2012 a été pris en considération dans cet exemplaire.

Polprevodniški elementi - Mikroelektromehanski elementi - 9. del: Merjenje (mehanske) spojne trdnosti med rezinami pri mikroelektromehanskih sistemih (MEMS)

Ta standard opisuje metodo merjenja (mehanske) spojne trdnosti med rezinami, vrsto spojnega postopka, na primer spajanje s fuzijo med silikonom in silikonom, anodno spajanje med silikonom in steklom itd., in ustrezno velikost strukture med obdelavo/sestavljanjem MEMS. Ustrezna debelina rezin je v razponu med 10 μm in nekaj milimetri.

General Information

• Status: Published
• Publication Date: 18-Aug-2011
• Withdrawal Date: 16-Aug-2014
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/SC 47F - IEC_SC_47F
• Parallel Committee: IEC/SC 47F - IEC_SC_47F
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 19-Aug-2011
• Completion Date: 19-Aug-2011
• Ref Project: SIST EN 62047-9:2011 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Standards Content (Sample)

SLOVENSKI STANDARD
01-oktober-2011
Polprevodniški elementi - Mikroelektromehanski elementi - 9. del: Merjenje
(mehanske) spojne trdnosti med rezinami pri mikroelektromehanskih sistemih
(MEMS)
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer
bonding strength measurement for MEMS
Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 9: Mesure de
la résistance de collage de deux plaquettes pour les MEMS
Ta slovenski standard je istoveten z: EN 62047-9:2011
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD
EN 62047-9
NORME EUROPÉENNE
August 2011
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 9: Wafer to wafer bonding strength measurement for MEMS
(IEC 62047-9:2011)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 9: Mesure de la résistance de Teil 9: Prüfverfahren zur Festigkeit von
collage de deux plaquettes pour les Full-Wafer-Bondverbindungen in der
MEMS Mikrosystemtechnik (MEMS)
(CEI 62047-9:2011) (IEC 62047-9:2011)

This European Standard was approved by CENELEC on 2011-08-17. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels

© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-9:2011 E
Foreword
The text of document 47F/82/FDIS, future edition 1 of IEC 62047-9, prepared by SC 47F, Micro-
electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC
parallel vote and was approved by CENELEC as EN 62047-9 on 2011-08-17.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2012-05-17
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2014-08-17
with the EN have to be withdrawn
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62047-9:2011 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards indicated:
IEC 62047-2 NOTE  Harmonized as EN 62047-2.
IEC 62047-4 NOTE  Harmonized as EN 62047-4.
__________
- 3 - EN 62047-9:2011
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year

IEC 60749-19 - Semiconductor devices - Mechanical and EN 60749-19 -
climatic test methods -
Part 19: Die shear strength
ISO 6892-1 2009 Metallic materials - Tensile testing - EN ISO 6892-1 2009
Part 1: Method of test at room temperature

ASTM E399-06e2 2008 Standard Test Method for Linear-Elastic - -
Plane-Strain Fracture Toughness K Ic of
Metallic Materials
IEC 62047-9 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs – Dispositif microélectromécaniques –
Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX T
ICS 31.080.99 ISBN 978-2-88912-585-2

– 2 – 62047-9  IEC:2011
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Measurement methods . 6
3.1 General . 6
3.2 Visual test . 6
3.2.1 Types of visual test. 6
3.2.2 Equipment . 7
3.2.3 Procedure . 7
3.2.4 Expression of results . 7
3.3 Pull test . 7
3.3.1 General . 7
3.3.2 Equipment . 8
3.3.3 Procedure . 8
3.3.4 Expression of results . 9
3.4 Double cantilever beam test using blade . 9
3.4.1 General . 9
3.4.2 Equipment . 11
3.4.3 Procedure . 11
3.4.4 Expression of results . 11
3.5 Electrostatic test. 12
3.5.1 General . 12
3.5.2 Equipment . 13
3.5.3 Procedure . 13
3.5.4 Expression of results . 14
3.6 Blister test . 14
3.6.1 General . 14
3.6.2 Preparation of the specimens . 15
3.6.3 Test apparatus and testing method . 15
3.6.4 Report . 16
3.7 Three-point bending test. 16
3.7.1 General . 16
3.7.2 Preparation of the specimens . 17
3.7.3 Test apparatus and testing method . 18
3.7.4 Report . 19
3.8 Die shear test . 19
3.8.1 General . 19
3.8.2 Preparation of the specimens . 20
3.8.3 Test apparatus . 21
3.8.4 Test method . 21
3.8.5 Shear bonding strength . 22
3.8.6 Report . 22
Annex A (informative) Example of bonding force . 23
Annex B (informative) An example of the fabrication process for three-point bending
specimens . 24
Bibliography . 25

62047-9  IEC:2011 – 3 –
Figure 1 – Bonding strength measurement – pull test . 8
Figure 2 – Bonding strength measurement – double cantilever beam (DCB) test
specimen using blade . 10
Figure 3 – Bonding strength measurement – electrostatic test . 13
Figure 4 – A specimen for blister test . 15
Figure 5 – Three-point bending specimen and loading method . 17
Figure 6 – Specimen geometry of three-point bending specimen . 18
Figure 7 – Die shear testing set-up . 19
Figure 8 – Size requirement of control tool and specimen . 20
Figure 9 – Example of bonded region in test piece . 20
Figure 10 – Setting of contact tool . 22
Figure A.1 – An example of bonding force or load measurement with time at constant
rate of upper fixture moving . 23
Figure B.1 – An example of specimen preparation for three-point bending test . 24

Table 1 – Example of visual test . 7
Table 2 − Example of pull test . 9
Table 3 – Example of Double Cantilever Beam test using blade . 12
Table 4 – Example of electrostatic test . 14

– 4 – 62047-9  IEC:2011
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 9: Wafer to wafer bonding strength measurement for MEMS

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is e
...