IEC 60749-4:2002/COR1:2003

Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

Modification of the validity date: now put at 2007.

Corrigendum 1 - Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 4: Essai continu fortement accéléré de contrainte de chaleur humide (HAST)

Modification de la date de validité : fixée maintenant à 2007.

General Information

• Status: Published
• Publication Date: 11-Aug-2003
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Current Stage: DELPUB - Deleted Publication
• Completion Date: 03-Mar-2017

Relations

• Corrects: IEC 60749-4:2002 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
• Effective Date: 05-Sep-2023
• Revised: IEC 60749-4:2017 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
• Effective Date: 05-Sep-2023

Standards Content (Sample)

CEI 60749-4 IEC 60749-4
(Première édition – 2002) (First edition – 2002)
DISPOSITIFS À SEMICONDUCTEURS – SEMICONDUCTOR DEVICES –
MÉTHODES D'ESSAIS MÉCANIQUES MECHANICAL AND CLIMATIC TEST METHODS –
ET CLIMATIQUES –
Partie 4: Essai continu fortement accéléré Part 4: Damp heat, steady state, highly
de contrainte de chaleur humide (HAST) accelerated stress test (HAST)
CORRIGENDUM 1
Page 2 Page 3
Au lieu de: Instead of:
Le comité a décidé q
...