IEC 60747-14-5:2010
(Main)Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
IEC 60747-14-5:2010 is applicable to semiconductor PN-junction temperature sensors and defines terms, definitions, symbols, essential ratings, characteristics and test methods that can be used to determine the characteristics of semiconductor types of PN-junction temperature sensors.
Dispositifs à semiconducteurs - Partie 14-5: Capteurs à semiconducteurs - Capteur de température à semiconducteurs à jonction PN
La CEI 60747-14-5:2010 s'applique aux capteurs de température à semiconducteurs à jonction PN et définit les termes et définitions, les symboles, les valeurs assignées et caractéristiques essentielles ainsi que les méthodes d'essai pouvant être utilisés pour déterminer les caractéristiques des types semiconducteurs de capteurs de température à jonction PN.
General Information
Standards Content (Sample)
IEC 60747-14-5
®
Edition 1.0 2010-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 14-5: Semiconductor sensors – PN-junction semiconductor temperature
sensor
Dispositifs à semiconducteurs –
Partie 14-5: Capteurs à semiconducteurs – Capteur de température à
semiconducteurs à jonction PN
IEC 60747-14-5:2010
---------------------- Page: 1 ----------------------
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IEC 60747-14-5
®
Edition 1.0 2010-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 14-5: Semiconductor sensors – PN-junction semiconductor temperature
sensor
Dispositifs à semiconducteurs –
Partie 14-5: Capteurs à semiconducteurs – Capteur de température à
semiconducteurs à jonction PN
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
R
CODE PRIX
ICS 31.080.01 ISBN 978-2-88910-278-5
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
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– 2 – 60747-14-5 © IEC:2010
CONTENTS
FOREWORD.4
1 Scope.6
2 Normative references .6
3 Terms, definitions and symbols .6
3.1 Terms and definitions .6
3.2 Symbols .7
4 Essential ratings and characteristics.7
4.1 General .7
4.2 Limiting values (absolute maximum rating system) .8
4.2.1 Electrical limiting values .8
4.2.2 Temperatures .8
4.3 Electrical characteristics.8
5 Measuring methods .8
5.1 General .8
5.2 Circuit diagrams of PN-junction temperature sensors .8
5.3 Temperature sensitivity .10
5.3.1 Purpose.10
5.3.2 Circuit diagram .11
5.3.3 Principle of measurement .11
5.3.4 Measurement procedure .11
5.3.5 Specified conditions .12
5.4 Bias supply operating current .12
5.4.1 Purpose.12
5.4.2 Circuit diagram .12
5.4.3 Measurement procedure .12
5.4.4 Specified conditions .12
5.5 Output voltage.12
5.5.1 Purpose.12
5.5.2 Circuit diagram .13
5.5.3 Measurement procedure .13
5.5.4 Specified conditions .13
5.6 Nonlinearity.13
5.6.1 Purpose.13
5.6.2 Circuit diagram .13
5.6.3 Principle of measurement .13
5.6.4 Measurement procedure .14
5.6.5 Specified conditions .14
5.7 Line regulation .14
5.7.1 Purpose.14
5.7.2 Circuit diagram .14
5.7.3 Principle of measurement .14
5.7.4 Measurement procedure .15
5.7.5 Specified conditions .15
5.8 Load regulation .15
5.8.1 Purpose.15
5.8.2 Circuit diagram .15
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60747-14-5 © IEC:2010 – 3 –
5.8.3 Principle of measurement .15
5.8.4 Measurement procedure .16
5.8.5 Specified conditions .16
5.9 Reliability test.16
5.9.1 Steady-state life .16
5.9.2 Temperature humidity life .16
Annex A (informative) Features of a semiconductor temperature sensor .17
Bibliography.18
Figure 1 – The circuit diagram of a PN-junction temperature sensor with a negative
temperature coefficient .9
Figure 2 – The circuit diagram of a PN-junction temperature sensor with a positive
temperature coefficient .10
Figure 3 – Circuit diagram for the measurement of the temperature sensitivity.11
Figure 4 – Circuit diagram for the measurement of the temperature sensitivity.11
Figure 5 – Circuit diagram for the measurement of the bias supply operating current.12
Figure 6 – Measurement principle of the nonlinearity .13
Figure 7 – Circuit diagram for the measurement of the line regulation.14
Table 1 – Electrical limiting values .8
Table 2 – Parameters electrical characteristics .8
Table A.1 – Features of some examples of semiconductor temperature sensors.17
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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 14-5: Semiconductor sensors –
PN-junction semiconductor temperature sensor
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-14-5 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/390/FDIS 47E/392/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all the parts in the IEC 60747 series, under the general title Semiconductor devices –
Discrete devices, can be found on the IEC website.
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60747-14-5 © IEC:2010 – 5 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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SEMICONDUCTOR DEVICES –
Part 14-5: Semiconductor sensors –
PN-junction semiconductor temperature sensor
1 Scope
This standard is applicable to semiconductor PN-junction temperature sensors and defines
terms, definitions, symbols, essential ratings, characteristics and test methods that can be
used to determine the characteristics of semiconductor types of PN-junction temperature
sensors.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60747-14-1, Semiconductor devices – Part 14-1: Semiconductor sensors – General and
classification
IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5:
Steady-state temperature humidity bias life test
IEC 60749-6, Semiconductor devices – Mechanical and climatic test methods – Part 6:
Storage at high temperature
3 Terms, definitions and symbols
3.1 Terms and definitions
For the purpose of this document, the following terms and definitions apply. For the general
terms and definitions, refer to IEC 60747-14-1.
3.1.1
voltage output style
output style of the temperature sensor where output change is expressed by voltage change
3.1.2
current output style
output style of the temperature sensor where output change is expressed by current change
3.1.3
supply voltage range
voltage range where the sensor operates normally
3.1.4
operating temperature range
temperature range where the sensor operates normally
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60747-14-5 © IEC:2010 – 7 –
3.1.5
line regulation
ratio of output voltage change to supply voltage change
NOTE The unit mV/V is usually used in the line regulation.
3.1.6
load regulation
ratio of output voltage change to output current change
NOTE The unit mV/mA is usually used in the load regulation.
3.2 Symbols
S sensitivity
ΔV full scale of output voltage change
out
ΔF full scale of temperature change
H hysteresis
H maximum difference between two outputs by the increasing input and decreasing input
max
Rx resistors
Qx transistors
R maximum difference between or among outputs
max
I current at emitter of transistor Q
1 1
I current at emitter of transistor Q
2 2
V voltage between base and emitter of transistor Q
BE1 1
V voltage between base and emitter of transistor Q
BE2 2
kT
V equals
T
q
k Boltzmann constant
T absolute temperature
q electron charge
S junction area
j
junction voltage
V
F
I forward current
F
N acceptor density
a
N donor density
d
D hole diffusion constant
p
D electron diffusion constant
n
L hole diffusion distance
p
L electron diffusion distance
n
n intrinsic carrier density
i
4 Essential ratings and characteristics
4.1 General
This clause gives ratings and characteristics required for specifying PN-junction temperature
sensors.
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4.2 Limiting values (absolute maximum rating system)
4.2.1 Electrical limiting values
Limiting values shall be specified as in Table 1.
Table 1 – Electrical limiting values
Subclause Parameters Min. Max.
4.2.1.1 Bias supply voltage +
4.2.1.2 Output terminal voltage +
4.2.2 Temperatures
Operating temperature
Storage temperature
4.3 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified.
The parameters shall be specified as in Table 2.
Table 2 – Parameters electrical characteristics
Subclause Parameters Min. Typical Max.
4.3.1 Temperature sensitivity + + +
4.3.2 Bias supply operating current + +
4.3.3 Output voltage + + +
4.3.4 Nonlinearity +
4.3.5 Line regulation +
4.3.6 Load regulation +
5 Measuring methods
5.1 General
This clause prescribes measuring methods for electrical characteristics of PN-junction
temperature sensors.
5.2 Circuit diagrams of PN-junction temperature sensors
Circuit diagrams of PN-junction temperature sensors are shown as follows. Figure 1 is a
typical circuit diagrams of a PN-junction temperature sensor with a negative temperature
coefficient.
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60747-14-5 © IEC:2010 – 9 –
I I I
F F F
V
out
V
F3
Q
3
V
F2
Q
2
V
F1
Q
1
IEC 101/10
Figure 1 – The circuit diagram of a PN-junction temperature sensor
with a negative temperature coefficient
⎛ ⎞
D
D ⎛ qV ⎞
p
n F
2
⎜ ⎟
I = S ⋅ + ⋅ n ⋅exp (1)
⎜ ⎟
F jq
i
⎜ ⎟
L N L N kT
⎝ ⎠
p d n a
⎝ ⎠
Figure 2 shows typical circuit diagrams of a PN-junction temperature sensor with a positive
temperature coefficient.
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I I
I
PTAT
Q Q
1 2
x x
M 1
ΔV
V V
F2 F1 F
R
1
V
R
out 2
2I
IEC 102/10
M emitter size ratio of Q and Q
1 2
Figure 2 – The circuit diagram of a PN-junction temperature sensor
with a positive temperature coefficient
ΔV = V −V
F F1 F2
kT
= ln(M ) (2)
q
ΔV
F
I = (3)
PTAT
R
1
⎛ R ⎞
2
⎜ ⎟
V = 1+ ΔV − V
out F F1
⎜ ⎟
R
⎝ 1⎠
⎛ R ⎞
kT
2
⎜ ⎟
= 1+ ln(M ) −V (4)
F1
⎜ ⎟
R q
⎝ 1⎠
5.3 Temperature sensitivity
5.3.1 Purpose
To measure the temperature sensitivity under specified conditions.
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60747-14-5 © IEC:2010 – 11 –
5.3.2 Circuit diagram
PNJ temp
V V
DD OUT
sensor
V
SS
V
2
V
1
IEC 103/10
Figure 3 – Circuit diagram for the measurement of the temperature sensitivity
5.3.3 Principle of measurement
Temperature sensitivity α is derived from the output voltages at low measuring temperature
SE
T and high measuring temperature T as follows:
L H
V − V
outH outL
α = (5)
SE
T − T
H L
where
V is the output voltage at high measuring temperature T ;
outH H
V is the output voltage at low measuring temperature T ;
outL L
α is expressed with the unit mV/°C. See Figure 4.
SE
Output voltage （V ）
out
V （T = T）
outL a L
α
SE
V （T = T ）
outH a H
0
T T
L H
Temperature T (°C) IEC 104/10
a
Figure 4 – Circuit diagram for the measurement of the temperature sensitivity
5.3.4 Measurement procedure
The supply voltage shall be applied as specified.
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Ambient or reference-point temperature of the sensor shall be set at the specified low
measuring temperature.
The output voltage at low measuring temperature, V is measured using voltmeter V .
outL, 2
The ambient or reference-point temperature of the sensor shall be set at the specified high
measuring temperature.
The output voltage at high measuring temperature, V is measured using voltmeter V .
outH, 2
The temperature sensitivity is calculated from Equation (5).
5.3.5 Specified conditions
– Supply voltage
– Low measuring temperature
– High measuring temperature
5.4 Bias supply operating current
5.4.1 Purpose
To measure the bias supply operating current under specified conditions.
5.4.2 Circuit diagram
PNJ temp
V V
DD OUT
sensor
A
V
SS
V
IEC 105/10
Figure 5 – Circuit diagram for the measurement of the bias supply operating current
NOTE V is usually open.
OUT
5.4.3 Measurement procedure
The ambient or reference-point temperature of the sensor shall be set at the specified value.
The supply voltage shall be applied as specified.
The bias supply operating current is measured using the amperemeter A.
5.4.4 Specified conditions
– Ambient or reference-point temperature
– Supply voltage
5.5 Output voltage
5.5.1 Purpose
To measure the output voltage under specified conditions.
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60747-14-5 © IEC:2010 – 13 –
5.5.2 Circuit diagram
The circuit diagram for the measurement of the output voltage is the same as the diagram
shown in Figure 3.
5.5.3 Measurement procedure
Ambient or reference-point temperature of the sensor shall be set at the specified value.
The supply voltage shall be applied as specified.
The output voltage is measured using voltmeter V .
2
5.5.4 Specified conditions
– Ambient or reference-point temperature
– Supply voltage
5.6 Nonlinearity
5.6.1 Purpose
To measure the nonlinearity under specified conditions.
5.6.2 Circuit diagram
The circuit diagram for the measurement of the nonlinearity is the same as the diagram shown
in Figure 3.
5.6.3 Principle of measurement
Output voltage V (V)
OUT
a
V (T = X)
OUT a
a
(B) Measured value
b
a
(A) Approximate line
V (T = Y)
OUT a
X 0 Y
IEC 106/10
Temperature T (°C)
a
Figure 6 – Measurement principle of the nonlinearity
Figure 6 shows the measurement principle of the nonlinearity.
Measurements are carried out at the temperatures between the lowest measurement
temperature X and the highest measurement temperature Y with the temperature step ΔT.
Next, the approximate straight line is plotted. The difference a between the measured value
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and the approximate line is calculated at each measurement temperature. The approximate
line should be plotted for the maximum difference a to be smallest. Nonlinearity α is
max NL
given by the equation
α = a / b (6)
NL max
where b is the difference between the output voltage at the lowest measurement temperature
and that at the highest measuring temperature. The unit of α is percent.
NL
5.6.4 Measurement procedure
The ambient or reference-point temperature of the sensor shall be set from the specified
lowest measurement temperature to the specified highest measurement temperature by the
specified measurement temperature step.
The supply voltage shall be applied as specified.
The output voltages are measured using voltmeter V at each measurement temperature.
2
Nonlinearity is calculated using Equation (6).
5.6.5 Specified conditions
Lowest measurement temperature
Highest measurement temperature
Measurement temperature step
Supply voltage
5.7 Line regulation
5.7.1 Purpose
To measure the line regulation under specified conditions.
5.7.2 Circuit diagram
The circuit diagram for the measurement of the line regulation is shown in Figure 7.
V V
DD PNJ temp OUT
A
sensor
V
SS
I
OUT
V V
1 2
IEC 107/10
Figure 7 – Circuit diagram for the measurement of the line regulation
5.7.3 Principle of measurement
The line regulation α is the input voltage dependence of the output voltage. It is given as
LR
follows:
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60747-14-5 © IEC:2010 – 15 –
α = ΔV / ΔV (7)
LR OUT SUP
where ΔV is the output voltage difference between the specified maximum supply voltage
OUT
and the specified minimum supply voltage under the specified output current, and ΔV is
SUP
the difference of the specified maximum supply voltage and the specified minimum one. The
unit mV/V is usually used in the line regulation.
5.7.4 Measurement procedure
The ambient or reference-point temperature of the sensor shall be set at the specified value.
The maximum supply voltage shall be applied as specified.
The output voltage is measured using voltmeter V under specified output current.
2
The minimum supply voltage shall be applied as specified.
The output voltage is measured using voltmeter V under specified output current.
2
The line regulation is calculated using Equation (7).
5.7.5 Specified conditions
Ambient or reference-point temperature
Maximum supply voltage
Minimum supply voltage
Output current
5.8 Load regulation
5.8.1 Purpose
To measure the load regulation under specified conditions.
5.8.2 Circuit diagram
The circuit diagram for the measurement of the load regulation is the same as the diagram
shown in Figure 7.
5.8.3 Principle of mea
...
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