IEC 60749-43:2017

Semiconductor devices - Mechanical and climatic test methods - Part 43: Guidelines for IC reliability qualification plans

IEC 60749-43:2017 gives guidelines for reliability qualification plans of semiconductor integrated circuit products (ICs). This document is not intended for military- and space-related applications.

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 43: Lignes directrices concernant les plans de qualification de la fiabilité des CI

L’IEC 60749-43:2017 fournit des lignes directrices concernant les plans de qualification de la fiabilité des produits de circuits intégrés (CI) à semiconducteurs. Le présent document n’est pas destiné aux applications militaires et spatiales.

General Information

• Status: Replaced
• Publication Date: 14-Jun-2017
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 2 - TC 47/WG 2
• Current Stage: DELPUB - Deleted Publication
• Start Date: 31-Mar-2020
• Completion Date: 25-Aug-2021

Relations

• Replaced By: IEC 63287-1:2021 - Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60749-43 ®
Edition 1.0 2017-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 43: Guidelines for IC reliability qualification plans

Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –
Partie 43: Lignes directrices concernant les plans de qualification de la fiabilité
des CI
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IEC 60749-43 ®
Edition 1.0 2017-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –

Part 43: Guidelines for IC reliability qualification plans

Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –

Partie 43: Lignes directrices concernant les plans de qualification de la fiabilité

des CI
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-4471-5

– 2 – IEC 60749-43:2017 © IEC 2017
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 8
4 Product categories and applications . 8
5 Failure . 9
5.1 Failure distribution . 9
5.2 Early failure . 10
5.2.1 Description . 10
5.2.2 Early failure rate . 11
5.2.3 Screening . 14
5.3 Random failure . 17
5.3.1 Description . 17
5.3.2 Mean failure rate . 17
5.4 Wear-out failure . 20
5.4.1 Description . 20
5.4.2 Wear-out failure rate . 20
6 Reliability test . 23
6.1 Reliability test description . 23
6.2 Reliability test plan . 23
6.2.1 Procedures for creating a reliability test plan . 23
6.2.2 Estimation of the test time required to confirm the TDDB from the
number of test samples . 26
6.2.3 Estimation of the number of samples required to confirm the TDDB from
the test time. 27
6.3 Reliability test methods . 28
6.4 Acceleration models for reliability tests . 31
6.4.1 Arrhenius model . 31
6.4.2 V-model: . 32
6.4.3 Absolute water vapor pressure model . 32
6.4.4 Coffin-Manson model . 32
7 Stress test methods . 32
8 Supplementary tests . 33
9 Summary table of assumptions . 34
10 Summary . 36
Bibliography . 37

Figure 1 – Bathtub curve . 10
Figure 2 – Failure process of IC manufacturing lots during the early failure period . 11
Figure 3 – Weibull conceptual diagram of the early failure rate . 12
Figure 4 – Example of a failure ratio: α (in hundreds) and the number of failures for
CL of 60 % . 14
Figure 5 – Screening and estimated early fail rate in Weibull diagram . 15
Figure 6 – Bathtub curve setting the point immediately after production as the origin . 16

Figure 7 – Bathtub curve setting the point after screening as the origin. 17
Figure 8 – Conceptual diagram of calculation method for the mean failure rate from
the exponential distribution . 18
Figure 9 – Conceptual diagram of calculation method for the mean failure rate as an
extension of early failure . 19
Figure 10 – Conceptual diagram of the wear-out failure . 21
Figure 11 – Conceptual diagram describing the concept of the acceleration test . 21
Figure 12 – Concept of the reliability test in a Weibull diagram (based on sample size) . 25
Figure 13 – Concept of the reliability test in a Weibull diagram (based on test time) . 28
Figure 14 – Difference in sampling sizes according to the m value (image) . 29

Table 1 – Examples of product categories . 9
–6
Table 2 – Cumulative failure probability 0,1 % over 10 years [×10 ] for the third, fifth
and seventh years . 25
Table 3 – Major reliability (life) test methods and purposes . 30
Table 4 – Examples of the number of test samples and the test time in typical
reliability (life) test methods . 31
Table 5 – LTPD sampling table for acceptance number Ac = 0 . 33
Table 6 – Major reliability (strength) test methods and purposes . 33
Table 7 – Supplementary tests . 34
a
Table 8 – Accelerating factors, calculation formulae and numerical values . 35

– 4 – IEC 60749-43:2017 © IEC 2017
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 43: Guidelines for IC reliability qualification plans

FOREWORD
1) The International Electrotechnical Commission
...