IEC 62435-2:2017
(Main)Electronic components - Long-term storage of electronic semiconductor devices - Part 2: Deterioration mechanisms
Electronic components - Long-term storage of electronic semiconductor devices - Part 2: Deterioration mechanisms
IEC 62435-2:2017 is related to deterioration mechanisms and is concerned with the way that components degrade over time depending on the storage conditions applied. This part also includes guidance on test methods that may be used to assess generic deterioration mechanisms. Typically, this part is used in conjunction with IEC 62435-1:2017 for any device long-term storage whose duration may be more than 12 months for product scheduled for long duration storage.
Composants électroniques - Stockage de longue durée des dispositifs électroniques à semiconducteurs - Partie 2: Mécanismes de détérioration
L’IEC 62435-2:2017 a trait aux mécanismes de détérioration et traite de la façon dont les composants se dégradent dans le temps en fonction des conditions de stockage appliquées. La présente partie contient aussi des préconisations sur les méthodes d’essai qui peuvent être utilisées pour évaluer les mécanismes de détérioration génériques. Elle s’utilise habituellement conjointement avec l’IEC 62435-1:2017 pour tout stockage de dispositifs dont la durée peut être supérieure à 12 mois, pour un produit destiné à être stocké pendant une durée prolongée.
General Information
Standards Content (Sample)
IEC 62435-2 ®
Edition 1.0 2017-01
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Electronic components – Long-term storage of electronic semiconductor
devices –
Part 2: Deterioration mechanisms
Composants électroniques – Stockage de longue durée des dispositifs
électroniques à semiconducteurs –
Partie 2: Mécanismes de détérioration
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IEC 62435-2 ®
Edition 1.0 2017-01
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Electronic components – Long-term storage of electronic semiconductor
devices –
Part 2: Deterioration mechanisms
Composants électroniques – Stockage de longue durée des dispositifs
électroniques à semiconducteurs –
Partie 2: Mécanismes de détérioration
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.020 ISBN 978-2-8322-3836-3
– 2 – IEC 62435-2:2017 © IEC 2017
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 7
2 Normative references . 7
3 Terms, definitions and abbreviated terms . 7
3.1 Terms and definitions . 7
3.2 Abbreviated terms . 8
4 Principles of deterioration . 8
4.1 General . 8
4.2 Solderability and oxidisation of lead finishes . 8
4.3 Popcorning . 8
4.4 Delamination . 8
4.5 Corrosion and tarnishing . 8
4.6 Electrical effects . 9
4.7 High-energy ionizing radiation damage . 9
4.8 Storage temperature risks to semiconductor devices . 9
4.9 Noble metal finishes . 9
4.10 Matte tin and other finishes . 9
4.11 Solder ball and solder bump . 9
4.12 Devices containing programmable memory – flash, programmable logic and
other devices containing non-volatile memory cells . 10
5 Technical validation of the components . 10
5.1 Purpose . 10
5.2 Test selection criteria . 10
5.3 Measurements and tests . 11
5.3.1 Assessment of the supplied batch reliability . 11
5.3.2 List of test methods . 11
5.4 Periodic assessment . 12
Annex A (normative) Failure mechanisms – Encapsulated and non-encapsulated
active components . 14
Bibliography . 17
Table 1 – List of tests . 11
Table A.1 – Failure mechanisms: encapsulated and non-encapsulated active
components . 14
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
ELECTRONIC COMPONENTS – LONG-TERM STORAGE
OF ELECTRONIC SEMICONDUCTOR DEVICES –
Part 2: Deterioration mechanisms
FOREWORD
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International Standard IEC 62435-2 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2327/FDIS 47/2350/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
...
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