Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 5: Lebensdauerprüfung bei konstanter Temperatur und Feuchte unter elektrischer Beanspruchung

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 5: Essai continu de durée de vie sous température et humidité avec polarisation

Polprevodniški elementi - Mehanske in klimatske preskusne metode - 5. del: Preskus življenjske dobe v dinamičnem ravnotežju vlažnosti in pri ustaljeni temperaturi

General Information

Status
Not Published
Public Enquiry End Date
30-Nov-2022
Technical Committee
Current Stage
4020 - Public enquire (PE) (Adopted Project)
Start Date
16-Sep-2022
Due Date
03-Feb-2023
Completion Date
02-Dec-2022

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SLOVENSKI STANDARD
oSIST prEN IEC 60749-5:2022
01-november-2022
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 5. del:
Preskus življenjske dobe v dinamičnem ravnotežju vlažnosti in pri ustaljeni
temperaturi
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state
temperature humidity bias life test
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 5:
Lebensdauerprüfung bei konstanter Temperatur und Feuchte unter elektrischer
Beanspruchung
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 5:
Essai continu de durée de vie sous température et humidité avec polarisation
Ta slovenski standard je istoveten z: prEN IEC 60749-5:2022
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
oSIST prEN IEC 60749-5:2022 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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oSIST prEN IEC 60749-5:2022

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oSIST prEN IEC 60749-5:2022

47/2770/CDV

COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60749-5 ED3
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2022-09-09 2022-12-02
SUPERSEDES DOCUMENTS:
47/2769/RR

IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:


Other TC/SCs are requested to indicate their interest, if any,
in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY

SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft for
Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of which they
are aware and to provide supporting documentation.

TITLE:
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature
humidity bias life test

PROPOSED STABILITY DATE: 2028

NOTE FROM TC/SC OFFICERS:


Copyright © 2022 International Electrotechnical Commission, IEC. All rights reserved. It is permitted to download this
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
You may not copy or "mirror" the file or printed version of the document, or any part of it, for any other purpose without
permission in writing from IEC.

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oSIST prEN IEC 60749-5:2022
IEC 60749-5/Ed3/CDV  IEC (E) – 2 –      47/2770/CDV
1 CONTENTS
2 FOREWORD . 3
3 1 Scope . 5
4 2 Normative references . 5
5 3 Terms and definitions . 5
6 4 General . 5
7 5 Equipment . 5
8 5.1 Equipment summary . 5
9 5.2 Temperature and relative humidity . 6
10 5.3 Devices under stress . 6
11 5.4 Minimizing release of contamination . 6
12 5.5 Ionic contamination . 6
13 5.6 Deionized water . 6
14 6 Test conditions . 6
15 6.1 Test conditions summary . 6
16 6.2 Temperature, relative humidity and duration . 6
17 6.3 Biasing guidelines . 6
18 6.4 Biasing choice and reporting . 7
19 7 Procedures . 7
20 7.1 Mounting . 7
21 7.2 Ramp-up . 8
22 7.3 Ramp-down . 8
23 7.4 Test clock . 8
24 7.5 Bias . 8
25 7.6 Read-out . 8
26 7.7 Handling . 8
27 8 Failure criteria . 8
28 9 Safety . 8
29 10 Summary . 9
30
31 Table 1 – Temperature, relative humidity and duration . 6
32 Table 2 – Criteria for choosing continuous or cyclical bias . 7
33
34

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oSIST prEN IEC 60749-5:2022
IEC 60749-5/Ed3/CDV  IEC (E) – 3 –      47/2770/CDV
35 INTERNATIONAL ELECTROTECHNICAL COMMISSION
36 ____________
37
38 SEMICONDUCTOR DEVICES –
39 MECHANICAL AND CLIMATIC TEST METHODS –
40
41 Part 5: Steady-state temperature humidity bias life test
42
43 FOREWORD
44 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
45 all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
46 international co-operation on all questions concerning standardization in the electrical and electronic fields. To
47 this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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53 agreement between the two organizations.
54 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
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56 interested IEC National Committees.
57 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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61 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
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68 6) All users should ensure that they have the latest edition of this publication.
69 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
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74 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
75 indispensable for the correct application of this publication.
76 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
77 patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
78 IEC 60749-5 has been prepared by IEC technical committee 47: Semiconductor devices. It is
79 an International Standard.
80 This third edition, based on JEDEC document JESD22-A101D.01, cancels and replaces the
81 second edition published in 2017. lt is used with permission of the copyright holder, JEDEC
82 Solid State Technology Association. This edition constitutes a technical revision.
83 This edition includes the following significant technical changes with respect to the previous
84 edition:
85 a) the need to minimize relative humidity gradients and maximize air flow between devices.;
86 b) the avoidance of condensation on devices and electrical fixtures;
87 c) replacement of references to ‘virtual junction’ with ‘die’.

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oSIST prEN IEC 60749-5:2022
IEC 60749-5/Ed3/CDV  IEC (E)  – 4 –        47/2770/CDV
88 The text of this International Standard is based on the following documents:
FDIS Report on voting
47/XX/FDIS 47/XX/RVD
89
90 The language used for the development of this International Standard is English.
91 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
92 accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement,
93 available at www.iec.ch/members_experts/refdocs. The main document types developed by
94 IEC are described in greater detail at www.iec.ch/standardsd
...

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