SIST EN IEC 60749-28:2022
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - Device level (IEC 60749-28:2022)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - Device level (IEC 60749-28:2022)
This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD).
All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application.
This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J.
The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model (CDM) - Device Level (IEC 60749-28:2022)
Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé par contact direct (DC-CDM) (IEC 60749-28:2022)
IEC 60749-28:2022 est disponible sous forme de IEC 60749-28:2022 RLV qui contient la Norme internationale et sa version Redline, illustrant les modifications du contenu technique depuis l'édition précédente.
L’IEC 60749-28:2022 établit la procédure d’essai, d’évaluation et de classification des dispositifs et des microcircuits selon leur susceptibilité (sensibilité) au dommage ou leur dégradation par suite de leur exposition à une décharge électrostatique (DES) sur un modèle défini de dispositif chargé (CDM) induit par champ. Tous les dispositifs à semiconducteurs, circuits à couches minces, dispositifs à ondes acoustiques de surface (OAS), dispositifs optoélectroniques, circuits intégrés hybrides (HIC - hybrid integrated circuits) et modules multipuces (MCM - multi-chip modules) en boîtiers qui contiennent l’un de ces dispositifs doivent être évalués selon le présent document. Pour effectuer les essais, les dispositifs sont assemblés dans un boîtier similaire à celui prévu dans l’application finale. Le présent document CDM ne s’applique pas aux appareils d’essai de modèles de décharge avec support. Il décrit en revanche la méthode induite par champ (FI - field-induced). Une méthode alternative, la méthode par contact direct (DC - direct contact), est décrite à l’Annexe J. L’objet du présent document est d’établir une méthode d'essai qui reproduit les défaillances du CDM et de fournir des résultats d'essais de DES de CDM fiables et reproductibles d'un appareil d'essai à un autre, indépendamment du type de dispositif. Des données reproductibles permettent des classifications et des comparaisons exactes des niveaux de sensibilité de DES de CDM. Cette édition contient les modifications techniques majeures suivantes par rapport à l'édition précédente:
- ajout d’un nouveau paragraphe et d'une nouvelle annexe relatifs aux problèmes associés à l’essai de CDM des circuits intégrés et des semiconducteurs discrets dans de très petits boîtiers;
- introduction de modifications afin de clarifier le nettoyage des dispositifs et des appareils d’essai.
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 28. del: Preskušanje občutljivosti na elektrostatično razelektritev (ESD) - Model z elektrostatično nabitim elementom (CDM) - Raven elementa (IEC 60749-28:2022)
Ta del standarda IEC 60749 določa standardni postopek za preskušanje, ocenjevanje in razvrščanje naprav ter mikrovezij glede na občutljivost na poškodbe in degradacijo, ki so posledica izpostavljenosti določenim induciranim elektrostatičnim razelektritvam (ESD) modelov z elektrostatično nabitim elementom (CDM).
Vse pakirane polprevodniške naprave, tankoplastne filme, površinske zvočnovalovne naprave (SAW), optoelektronske naprave, hibridna integrirana vezja (HIC) in veččipne module (MCM), ki vsebujejo katero koli od teh naprav, je treba oceniti v skladu s tem dokumentom. Za izvajanje preskusov so naprave sestavljene v paket, podoben tistemu, ki se pričakuje pri končni uporabi.
Ta dokument za model z elektrostatično nabitim elementom se ne uporablja za preskusne naprave za razelektritvene modele z vtičnico. Ta dokument opisuje metodo z induciranim poljem. Alternativna metoda, tj. metoda z neposrednim stikom, je opisana v dodatku J.
Namen tega dokumenta je določiti preskusno metodo, ki bo ponovila napake modela z elektrostatično nabitim elementom (CMD) ter zagotovila zanesljive in ponovljive preskusne rezultate elektrostatične izpraznitve modela z elektrostatično nabitim elementom pri vseh preskusnih napravah ne glede na vrsto naprave. Ponovljivi podatki bodo omogočili natančne opredelitve in primerjave ravni občutljivosti na elektrostatične izpraznitve modela z elektrostatično nabitim elementom.
General Information
Relations
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN IEC 60749-28:2022
01-junij-2022
Nadomešča:
SIST EN 60749-28:2017
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 28. del:
Preskušanje občutljivosti na elektrostatično razelektritev (ESD) - Model z
elektrostatično nabitim elementom (CDM) - Raven elementa (IEC 60749-28:2022)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic
discharge (ESD) sensitivity testing - Charged device model (CDM) - Device level (IEC
60749-28:2022)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung
der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model
(CDM) - Device Level (IEC 60749-28:2022)
Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28:
Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé
par contact direct (DC-CDM) (IEC 60749-28:2022)
Ta slovenski standard je istoveten z: EN IEC 60749-28:2022
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN IEC 60749-28:2022 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN IEC 60749-28:2022
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SIST EN IEC 60749-28:2022
EUROPEAN STANDARD EN IEC 60749-28
NORME EUROPÉENNE
EUROPÄISCHE NORM April 2022
ICS 31.080.01 Supersedes EN 60749-28:2017 and all of its
amendments and corrigenda (if any)
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 28: Electrostatic discharge (ESD) sensitivity testing -
Charged device model (CDM) - device level
(IEC 60749-28:2022)
Dispositifs à semiconducteurs - Méthodes d'essai Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 28: Essai de sensibilité Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen
aux décharges électrostatiques (DES) - Modèle de dispositif elektrostatische Entladungen (ESD) - Charged Device
chargé (CDM) - niveau du dispositif Model (CDM) - Device Level
(IEC 60749-28:2022) (IEC 60749-28:2022)
This European Standard was approved by CENELEC on 2022-04-05. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
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Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2022 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-28:2022 E
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SIST EN IEC 60749-28:2022
EN IEC 60749-28:2022 (E)
European foreword
The text of document 47/2746/FDIS, future edition 2 of IEC 60749-28, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-28:2022.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2023-01-05
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2025-04-05
document have to be withdrawn
This document supersedes EN 60749-28:2017 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60749-28:2022 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following note has to be added for the standard indicated:
IEC 60749-26 NOTE Harmonized as EN IEC 60749-26
2
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SIST EN IEC 60749-28:2022
IEC 60749-28
®
Edition 2.0 2022-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 28: Electrostatic discharge (ESD) sensitivity testing – Charged device
model (CDM) – device level
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et
climatiques –
Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) – Modèle de
dispositif chargé (CDM) – niveau du dispositif
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-1082-9
Warning! Make sure that you obtained this publication from an authorized distributor.
Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
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SIST EN IEC 60749-28:2022
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CONTENTS
FOREWORD . 6
INTRODUCTION . 8
1 Scope . 9
2 Normative references . 9
3 Terms and definitions . 9
4 Required equipment . 10
4.1 CDM ESD tester . 10
4.1.1 General . 10
4.1.2 Current-sensing element . 11
4.1.3 Ground plane . 11
4.1.4 Field plate/field plate dielectric layer . 11
4.1.5 Charging resistor . 11
4.2 Waveform measurement equipment . 12
4.2.1 General . 12
4.2.2 Cable assemblies . 12
4.2.3 Equipment for high-bandwidth waveform measurement . 12
4.2.4 Equipment for 1,0 GHz waveform measurement . 12
4.3 Verification modules (metal discs) . 12
4.4 Capacitance meter . 12
4.5 Ohmmeter . 12
5 Periodic tester qualification, waveform records, and waveform verification
requirements . 13
5.1 Overview of required CDM tester evaluations . 13
5.2 Waveform capture hardware . 13
5.3 Waveform capture setup . 13
5.4 Waveform capture procedure . 13
5.5 CDM tester qualification/requalification procedure . 14
5.5.1 CDM tester qualification/requalification procedure . 14
5.5.2 Conditions requiring CDM tester qualification/requalification . 14
5.5.3 1 GHz oscilloscope correlation with high bandwidth oscilloscope . 14
5.6 CDM tester quarterly and routine waveform verification procedure . 15
5.6.1 Quarterly waveform verification procedure . 15
5.6.2 Routine waveform verification procedure . 15
5.7 Waveform characteristics . 15
5.8 Documentation . 17
5.9 Procedure for evaluating full CDM tester charging of a device . 17
6 CDM ESD testing requirements and procedures . 18
6.1 Tester and device preparation . 18
6.2 Test requirements . 18
6.2.1 Test temperature and humidity . 18
6.2.2 Device test . 18
6.3 Test procedures . 19
6.4 CDM test recording / reporting guidelines . 19
6.4.1 CDM test recording . 19
6.4.2 CDM Reporting Guidelines . 19
6.5 Testing of Devices in Small Packages . 19
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IEC 60749-28:2022 © IEC 2022 – 3 –
7 CDM classification criteria . 20
Annex A (normative) Verification module (metal disc) specifications and cleaning
guidelines for verification modules and testers . 21
A.1 Tester verification modules and field plate dielectric . 21
A.2 Care of verification modules . 21
Annex B (normative) Capacitance measurement of verification modules (metal discs)
sitting on a tester field plate dielectric . 22
Annex C (normative) Testing of small package integrated circuits and discrete
semiconductors (ICDS) . 23
C.1 Testing rationale . 23
C.2 Procedure for Determining C . 23
small
C.3 ICDS Technology requirements . 24
Annex D (informative) CDM test hardware and metrology improvements . 25
Annex E (informative) CDM tester electrical schematic . 27
Annex F (informative) Sample oscilloscope setup and waveform . 28
F.1 General . 28
F.2 Settings for the 1 GHz bandwidth oscilloscope . 28
F.3 Settings for the high-bandwidth oscilloscope . 28
F.4 Setup . 28
F.5 Sample waveforms from a 1 GHz oscilloscope . 28
F.6 Sample waveforms from an 8 GHz oscilloscope . 29
Annex G (informative) Field-induced CDM tester discharge procedures . 31
G.1 General . 31
G.2 Single discharge procedure . 31
G.3 Dual discharge procedure . 31
Annex H (informative) Waveform verification procedures . 33
H.1 Factor/offset adjustment method . 33
H.2 Software voltage adjustment method. 36
H.3 Example parameter recording tables . 38
Annex I (informative) Determining the appropriate charge delay for full charging of a
large module or device . 40
I.1 General . 40
I.2 Procedure for charge delay determination . 40
Annex J (informative) Electrostatic discharge (ESD) sensitivity testing direct contact
charged device model (DC-CDM) . 42
J.1 General . 42
J.2 Standard test module . 42
J.3 Test equipment (CDM simulator) . 42
J.3.1 Test equipment design. 42
J.3.2 DUT (device under test) support . 43
J.3.3 Metal bar/board . 43
J.3.4 Equipment setup . 43
J.4 Verification of test equipment . 44
J.4.1 General description of verification test equipment . 44
J.4.2 Instruments for measurement . 45
J.4.3 Verification of test equipment, using a current probe . 45
J.5 Test procedure . 46
J.5.1 Initial measurement . 46
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J.5.2 Tests . 47
J.5.3 Intermediate and final measurement . 47
J.6 Failure criteria . 47
J.7 Classification criteria . 47
J.8 Summary . 47
Bibliography . 49
Figure 1 – Simplified CDM tester hardware schematic . 11
Figure 2 – CDM characteristic waveform and parameters . 17
Figure E.1 – Simplified CDM tester electrical schematic . 27
Figure F.1 – 1 GHz TC 500, small verification module . 29
Figure F.2 – 1 GHz TC 500, large verification module . 29
Figure F.3 – 8 GHz TC 500, small verification module (oscilloscope adjusts for
attenuation) . 30
Figure F.4 – GHz TC 500, large verification module (oscilloscope adjusts for
attenuation) . 30
Figure G.1 – Single discharge procedure (field charging, I Pulse, and slow
CDM
discharge) . 31
st nd
Figure G.2 – Dual discharge procedure (field charging, 1 I pulse, no field, 2
CDM
I pulse) . 32
CDM
Figure H.1 – An example of a waveform verification flow for qualification and quarterly
checks using the factor/offset adjustment method . 34
Figure H.2 – An example of a waveform verification flow for the routine checks using
the factor/offset adjustment method . 35
Figure H.3 – Example of average I for the large verification module – high
peak
bandwidth oscilloscope . 36
Figure H.4 – An example of a waveform verification flow for qualification and quarterly
checks using the software voltage adjustment method . 37
Figure H.5 – An example of a waveform verification flow for the routine checks using
the software voltage adjustment method . 38
Figure I.1 – An example characterization of charge delay vs. I . 41
p
Figure J.1 – Examples of discharge circuit where the discharge is caused by closing
the switch . 43
Figure J.2 – Verification test equipment for measuring the discharge current flowing to
the metal bar/board from the standard test module . 44
Figure J.3 – Current waveform . 44
Figure J.4 – Measurement circuit for verification method using a current probe. 46
Table 1 – CDM waveform characteristics for a 1 GHz bandwidth oscilloscope . 16
Table 2 – CDM waveform characteristics for a high-bandwidth (≥ 6 GHz) oscilloscope . 16
Table 3 – CDM ESDS device classification levels . 20
Table A.1 – Specification for CDM tester verification modules (metal discs) . 21
Table H.1 – Example waveform parameter recording table for the factor/offset
adjustment method . 39
Table H.2 – Example waveform parameter recording table for the software voltage
adjustment method . 39
Table J.1 – Dimensions of the standard test modules . 42
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Table J.2 – Specified current waveform . 45
Table J.3 – Range of peak current I for test equipment . 45
p1
Table J.4 – Specification of peak current I for the current probe verification method . 46
p1
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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 28: Electrostatic discharge (ESD) sensitivity testing –
Charged device model (CDM) – device level
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60749-28 has been prepared by IEC technical committee 47: Semiconductor devices, in
collaboration with IEC technical committee 101: Electrostatics. It is an International Standard.
ANSI/ESDA/JEDEC JS-002-2018 has served as a basis for the elaboration of this standard. It
is used with permission of the copyright holders, ESD Association and JEDEC Solid state
Technology Association. ANSI/ESDA/JEDEC JS-002-2018 describes the field-induced (FI)
method. An alternative, the direct contact (DC) method (not based on JS-002-2018), is
described in Annex J.
This second edition cancels and replaces the first edition published in 2017. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
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SIST EN IEC 60749-28:2022
IEC 60749-28:2022 © IEC 2022 – 7 –
a) a new subclause and annex relating to the problems associated with CDM testing of
integrated circuits and discrete semiconductors in very small packages;
b) changes to clarify cleaning of devices and testers.
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2746/FDIS 47/2754/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.
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INTRODUCTION
The earliest electrostatic discharge (ESD) test models and standards simulate a charged object
approaching a device and discharging through the device. The most common example is
IEC 60749-26, the human body model (HBM). However, with the increasing use of automated
device handling systems, another potentially destructive discharge mechanism, the charged
device model (CDM), becomes increasingly important. In the CDM, a device itself becomes
charged (e.g. by sliding on a surface (tribocharging) or by electric field induction) and is rapidly
discharged (by an ESD event) as it closely approaches a conductive object. A critical fea
...
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