SIST EN IEC 60747-16-7:2023

Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 60747-16-7:2022)

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

Halbleiterbauelemente - Teil 16-7: Integrierte Mikrowellenverstärker - Schaltungsdämpfer (IEC 60747-16-7:2022)

Dispositifs à semiconducteurs - Partie 16-7: Circuits intégrés hyperfréquences - Atténuateurs (IEC 60747-16-7:2022)

L’IEC 60747-16-7:2022 spécifie la terminologie, les valeurs assignées et caractéristiques essentielles, et les méthodes de mesure des atténuateurs des circuits intégrés hyperfréquences.

Polprevodniški elementi - 16-7. del: Mikrovalovna integrirana vezja - Blažilniki (IEC 60747-16-7:2022)

Ta del standarda IEC 60747 določa terminologijo, bistvene vrednosti in lastnosti ter merilne metode za blažilnike mikrovalovnih integriranih vezij.

General Information

• Status: Published
• Publication Date: 30-Jan-2023
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 23-Jan-2023
• Due Date: 30-Mar-2023
• Completion Date: 31-Jan-2023
• Ref Project: EN IEC 60747-16-7:2023 - Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN IEC 60747-16-7:2023
01-marec-2023
Polprevodniški elementi - 16-7. del: Mikrovalovna integrirana vezja - Blažilniki (IEC
60747-16-7:2022)
Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC
60747-16-7:2022)
Halbleiterbauelemente - Teil 16-7: Integrierte Mikrowellenverstärker - Schaltungsdämpfer
(IEC 60747-16-7:2022)
Dispositifs à semiconducteurs - Partie 16-7: Circuits intégrés hyperfréquences -
Atténuateurs (IEC 60747-16-7:2022)
Ta slovenski standard je istoveten z: EN IEC 60747-16-7:2023
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
SIST EN IEC 60747-16-7:2023 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN IEC 60747-16-7:2023

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SIST EN IEC 60747-16-7:2023


EUROPEAN STANDARD EN IEC 60747-16-7

NORME EUROPÉENNE

EUROPÄISCHE NORM January 2023
ICS 31.080.99

English Version
Semiconductor devices - Part 16-7: Microwave integrated
circuits - Attenuators
(IEC 60747-16-7:2022)
Dispositifs à semiconducteurs - Partie 16-7: Circuits Halbleiterbauelemente - Teil 16-7: Integrierte
intégrés hyperfréquences - Atténuateurs Mikrowellenverstärker - Schaltungsdämpfer
(IEC 60747-16-7:2022) (IEC 60747-16-7:2022)
This European Standard was approved by CENELEC on 2023-01-03. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2023 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 60747-16-7:2023 E

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SIST EN IEC 60747-16-7:2023
EN IEC 60747-16-7:2023 (E)
European foreword
The text of document 47E/794/FDIS, future edition 1 of IEC 60747-16-7, prepared by SC 47E
"Discrete semiconductor devices" of IEC/TC 47 "Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN IEC 60747-16-7:2023.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2023-10-03
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2026-01-03
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60747-16-7:2022 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standard indicated:
IEC 60747-16-1:2001 NOTE Harmonized as EN 60747-16-1:2002 (not modified)
IEC 60747-16-1:2001/AMD1:2007 NOTE Harmonized as EN 60747-16-1:2002/A1:2007 (not modified)
IEC 60747-16-1:2001/AMD2:2017 NOTE Harmonized as EN 60747-16-1:2002/A2:2017 (not modified)
IEC 60747-16-4:2004 NOTE Harmonized as EN 60747-16-4:2004 (not modified)
IEC 60747-16-4:2004/AMD1:2009 NOTE Harmonized as EN 60747-16-4:2004/A1:2011 (not modified)
IEC 60747-16-4:2004/AMD2:2017 NOTE Harmonized as EN 60747-16-4:2004/A2:2017 (not modified)
IEC 60747-16-6:2019 NOTE Harmonized as EN IEC 60747-16-6:2019 (not modified)
2

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SIST EN IEC 60747-16-7:2023
EN IEC 60747-16-7:2023 (E)
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1 Where an International Publication has been modified by common modifications, indicated by (mod), the
relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60747-1 2006 Semiconductor devices - Part 1: General - -
+ A1 2010  - -
IEC 60747-4 - Semiconductor devices - Discrete devices - - -
Part 4: Microwave diodes and transistors
IEC 61340-5-1 - Electrostatics - Part 5-1: Protection of EN 61340-5-1 -
electronic devices from electrostatic
phenomena - General requirements
IEC/TR 61340-5-2 - Electrostatics - Part 5-2: Protection of - -
electronic devices from electrostatic
phenomena - User guide

3

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SIST EN IEC 60747-16-7:2023

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SIST EN IEC 60747-16-7:2023



IEC 60747-16-7

®


Edition 1.0 2022-11




INTERNATIONAL



STANDARD




NORME


INTERNATIONALE











Semiconductor devices –

Part 16-7: Microwave integrated circuits – Attenuators



Dispositifs à semiconducteurs –

Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.99 ISBN 978-2-8322-6116-3




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN IEC 60747-16-7:2023
– 2 – IEC 60747-16-7:2022  IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 10
4.1 General requirements . 10
4.1.1 Circuit identification and types . 10
4.1.2 General function description . 11
4.1.3 Manufacturing technology . 11
4.1.4 Package identification . 11
4.2 Application description . 11
4.2.1 Conformance to system and/or interface information . 11
4.2.2 Overall block diagram . 11
4.2.3 Reference data . 11
4.2.4 Electrical compatibility . 11
4.2.5 Associated devices . 12
4.3 Specification of the function . 12
4.3.1 Detailed block diagram – Functional blocks . 12
4.3.2 Identification and function of terminals . 12
4.3.3 Function description . 13
4.4 Limiting values (absolute maximum rating system) . 13
4.4.1 Requirements . 13
4.4.2 Electrical limiting values . 13
4.4.3 Temperatures . 14
4.5 Operating conditions (within the specified operating temperature range) . 15
4.6 Electrical characteristics . 15
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 16
5 Measuring methods . 16
5.1 General . 16
5.1.1 General precautions . 16
5.1.2 Characteristic impedance . 16
5.1.3 Handling precautions . 16
5.1.4 Types . 16
5.2 Transmission loss (L ) and insertion loss (L ) . 17
trans ins
5.2.1 Purpose . 17
5.2.2 Measuring methods . 17
5.3 Attenuation value (A ). 20
att
5.3.1 Purpose . 20
5.3.2 Measuring methods . 20
5.4 Attenuation range (A ) . 22
ran
5.4.1 Purpose . 22
5.4.2 Measuring methods . 22
5.5 Attenuation accuracy (A ), Attenuation accuracy (RMS) (A ) . 24
aur aur(RMS)
5.5.1 Purpose . 24
5.5.2 Measuring methods . 24

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SIST EN IEC 60747-16-7:2023
IEC 60747-16-7:2022  IEC 2022 – 3 –
5.6 Input return loss (L ) . 26
ret(in)
5.6.1 Purpose . 26
5.6.2 Measuring methods . 26
5.7 Output return loss (L ) . 29
ret(out)
5.7.1 Purpose . 29
5.7.2 Measuring methods . 29
5.8 Input power at n dB compression (P ). 31
i(ndB)
5.8.1 Purpose . 31
5.8.2 Circuit diagram . 31
5.8.3 Principle of measurement . 31
5.8.4 Circuit description and requirements . 31
5.8.5 Precautions to be observed . 31
5.8.6 Measurement procedure . 31
5.8.7 Specified conditions . 31
5.9 Intermodulation distortion (two-tone)(P /P ) . 32
n 1
5.9.1 Purpose . 32
5.9.2 Circuit diagram . 32
5.9.3 Principle of measurement . 32
5.9.4 Circuit description and requirements . 33
5.9.5 Precautions to be observed . 33
5.9.6 Measurement procedure . 33
5.9.7 Specified conditions . 33
5.10 Power at the intercept point (for intermodulation products) (P ) . 34
n(IP)
5.10.1 Purpose . 34
5.10.2 Circuit diagram . 34
5.10.3 Principle of measurement . 34
5.10.4 Circuit description and requirements . 34
5.10.5 Precautions to be observed . 34
5.10.6 Measurement procedure . 34
5.10.7 Specified conditions . 34
5.11 Relative phase shift (θ ) . 35
rel
5.11.1 Purpose . 35
5.11.2 Circuit diagram . 35
5.11.3 Principle of measurement . 35
5.11.4 Circuit description and requirements . 35
5.11.5 Precautions to be observed . 35
5.11.6 Measurement procedure . 36
5.11.7 Specified conditions . 36
5.12 Turn on time(t ), turn off time(t ), rise time(t ), fall time(t ) . 36
on off r(out) f(out)
5.12.1 Purpose . 36
5.12.2 Circuit diagram . 36
5.12.3 Principle of measurement . 36
5.12.4 Circuit description and requirements . 38
5.12.5 Precautions to be observed . 38
5.12.6 Measurement procedure . 38
5.12.7 Specified conditions . 38
5.13 Control voltage sensitivity (S ) . 38
vcont

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5.13.1 Purpose . 38
5.13.2 Measuring methods . 38
Bibliography . 41

Figure 1 – Circuit diagram for the measurement of the transmission loss and insertion
loss (method 1) . 17
Figure 2 – Circuit diagram for the measurement of the scattering parameters . 19
Figure 3 – Circuit diagram for the measurement of the return loss (method 1) . 27
Figure 4 – Circuit diagram for the measurement of intermodulation distortion . 32
Figure 5 – Circuit diagram for the measurement of response times and switching times . 36
Figure 6 – Input and output waveforms . 37

Table 1 – Function of terminals . 12
Table 2 – Electrical limiting values . 14
Table 3 – Electrical limiting values in detail specification . 14
Table 4 – Temperatures . 14
Table 5 – Electrical characteristics . 15

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SIST EN IEC 60747-16-7:2023
IEC 60747-16-7:2022  IEC 2022 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 16-7: Microwave integrated circuits –
Attenuators

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-7 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/794/FDIS 47E/798/RVD

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

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SIST EN IEC 60747-16-7:2023
– 6 – IEC 60747-16-7:2022  IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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SIST EN IEC 60747-16-7:2023
IEC 60747-16-7:2022  IEC 2022 – 7 –
SEMICONDUCTOR DEVICES –

Part 16-7: Microwave integrated circuits –
Attenuators



1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit attenuators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD 1:2010
IEC 60747-4, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
reference state
thru state
state of minimum attenuation
3.2
attenuation state
state in which the attenuation is greater than that in the reference state

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3.3
transmission loss
L
trans
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the transmission loss is expressed in decibels.
3.4
insertion loss

L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P ) in the reference state
o i
Note 1 to entry: In this region, ∆ P (dBm) =∆ P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
[SOURCE: IEC 60747-16-4:2004/AMD 1:2009, 3.1, modified – “at the switched on port” has
been deleted and “in the reference state” has been added.]
3.5
attenuation value
A
att
difference between the insertion loss and the transmission loss in the attenuation state
3.6
attenuation range
A
ran
difference between the maximum and minimum attenuation value
3.7
attenuation accuracy
A
aur
maximum difference between the measured and the nominal attenuation values
3.8
attenuation accuracy (RMS)
A
aur (RMS)
root-mean-square value of the attenuation accuracy
3.9
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.10
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]

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SIST EN IEC 60747-16-7:2023
IEC 60747-16-7:2022  IEC 2022 – 9 –
3.11
input power at n dB compression
P
i(ndB)
input power where the transmission loss increases by n dB compared with transmission loss in
linear region
Note 1 to entry: Usually n is 0,25 for voltage variable attenuators and 0,1 for digital step attenuators.
3.12
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
[SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.13
power at the intercept point (for intermodulation products)
P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
th
component and the n order intermodulation components, when the extrapolation is carried out
in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.14
relative phase shift
θ
rel
phase shift in the attenuation state relative to that in the reference state
3.15
switching time
3.15.1
turn on time
t
on
interval between the reference point on the leading edge of the c
...