SIST EN IEC 60747-16-7:2023

Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 60747-16-7:2022)

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

Halbleiterbauelemente - Teil 16-7: Integrierte Mikrowellenverstärker - Schaltungsdämpfer (IEC 60747-16-7:2022)

Dispositifs à semiconducteurs - Partie 16-7: Circuits intégrés hyperfréquences - Atténuateurs (IEC 60747-16-7:2022)

L’IEC 60747-16-7:2022 spécifie la terminologie, les valeurs assignées et caractéristiques essentielles, et les méthodes de mesure des atténuateurs des circuits intégrés hyperfréquences.

Polprevodniški elementi - 16-7. del: Mikrovalovna integrirana vezja - Blažilniki (IEC 60747-16-7:2022)

Ta del standarda IEC 60747 določa terminologijo, bistvene vrednosti in lastnosti ter merilne metode za blažilnike mikrovalovnih integriranih vezij.

General Information

• Status: Published
• Publication Date: 30-Jan-2023
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 23-Jan-2023
• Due Date: 30-Mar-2023
• Completion Date: 31-Jan-2023
• Ref Project: EN IEC 60747-16-7:2023 - Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators

Overview

EN IEC 60747-16-7:2023 (identical to IEC 60747-16-7:2022) is the CENELEC-harmonized standard that defines terminology, essential ratings and characteristics, and measuring methods for microwave integrated circuit attenuators. Published as part of the IEC 60747 series on semiconductor devices, this document establishes uniform definitions and test procedures for RF/microwave attenuator components used in semiconductor IC form.

Key topics and technical requirements

The standard focuses on practical, testable parameters and includes detailed measurement guidance. Major technical topics covered:

• Terminology and definitions specific to microwave integrated circuit attenuators.
• Essential ratings and characteristics such as circuit identification, function description, manufacturing technology, package identification, limiting (absolute maximum) values, operating conditions, and electrical, mechanical and environmental characteristics.
• Measuring methods and procedures for RF performance metrics, including:
  • Transmission loss and insertion loss
  • Attenuation value, attenuation range and attenuation accuracy (including RMS)
  • Input and output return loss
  • Input power at n dB compression
  • Two-tone intermodulation distortion and intercept point
  • Relative phase shift
  • Turn-on/turn-off times, rise/fall times and switching response
  • Control voltage sensitivity
• Handling and test precautions, characteristic impedance considerations, and required test circuits and diagrams for reproducible measurement.
• Normative references to related IEC documents (e.g., IEC 60747-1, IEC 60747-4, IEC 61340 series for ESD protection).

Practical applications and users

This standard is intended for organizations and professionals involved with RF/microwave component development, qualification and procurement:

• RF/microwave semiconductor manufacturers designing integrated attenuators
• Test houses and calibration laboratories verifying attenuator performance (insertion loss, return loss, IMD, compression)
• Circuit and system designers integrating attenuators into communications, radar, satellite, instrumentation, and test equipment
• Quality, compliance and procurement teams ensuring components meet standardized ratings and measurement methods
• Academic and research labs working on microwave IC characterization

Using EN IEC 60747-16-7 helps ensure consistent performance specifications, comparable test results and smoother regulatory or supplier qualification processes for microwave attenuator components.

Related standards

• IEC 60747-1 (Semiconductor devices – General)
• IEC 60747-16 series (other microwave integrated circuit parts)
• IEC 60747-4 (Microwave diodes and transistors)
• IEC 61340-5-1 / IEC/TR 61340-5-2 (ESD protection guidance)

Keywords: EN IEC 60747-16-7, microwave integrated circuits, attenuators, semiconductor devices, attenuation, insertion loss, return loss, intermodulation distortion, measurement methods, CENELEC.

Standards Content (Sample)

SLOVENSKI STANDARD
01-marec-2023
Polprevodniški elementi - 16-7. del: Mikrovalovna integrirana vezja - Blažilniki (IEC
60747-16-7:2022)
Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC
60747-16-7:2022)
Halbleiterbauelemente - Teil 16-7: Integrierte Mikrowellenverstärker - Schaltungsdämpfer
(IEC 60747-16-7:2022)
Dispositifs à semiconducteurs - Partie 16-7: Circuits intégrés hyperfréquences -
Atténuateurs (IEC 60747-16-7:2022)
Ta slovenski standard je istoveten z: EN IEC 60747-16-7:2023
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60747-16-7

NORME EUROPÉENNE
EUROPÄISCHE NORM January 2023
ICS 31.080.99
English Version
Semiconductor devices - Part 16-7: Microwave integrated
circuits - Attenuators
(IEC 60747-16-7:2022)
Dispositifs à semiconducteurs - Partie 16-7: Circuits Halbleiterbauelemente - Teil 16-7: Integrierte
intégrés hyperfréquences - Atténuateurs Mikrowellenverstärker - Schaltungsdämpfer
(IEC 60747-16-7:2022) (IEC 60747-16-7:2022)
This European Standard was approved by CENELEC on 2023-01-03. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2023 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60747-16-7:2023 E

European foreword
The text of document 47E/794/FDIS, future edition 1 of IEC 60747-16-7, prepared by SC 47E
"Discrete semiconductor devices" of IEC/TC 47 "Semiconductor devices" was submitted to the IEC-
CENELEC parallel vote and approved by CENELEC as EN IEC 60747-16-7:2023.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2023-10-03
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2026-01-03
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60747-16-7:2022 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standard indicated:
IEC 60747-16-1:2001 NOTE Harmonized as EN 60747-16-1:2002 (not modified)
IEC 60747-16-1:2001/AMD1:2007 NOTE Harmonized as EN 60747-16-1:2002/A1:2007 (not modified)
IEC 60747-16-1:2001/AMD2:2017 NOTE Harmonized as EN 60747-16-1:2002/A2:2017 (not modified)
IEC 60747-16-4:2004 NOTE Harmonized as EN 60747-16-4:2004 (not modified)
IEC 60747-16-4:2004/AMD1:2009 NOTE Harmonized as EN 60747-16-4:2004/A1:2011 (not modified)
IEC 60747-16-4:2004/AMD2:2017 NOTE Harmonized as EN 60747-16-4:2004/A2:2017 (not modified)
IEC 60747-16-6:2019 NOTE Harmonized as EN IEC 60747-16-6:2019 (not modified)
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1 Where an International Publication has been modified by common modifications, indicated by (mod), the
relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60747-1 2006 Semiconductor devices - Part 1: General - -
+ A1 2010  - -
IEC 60747-4 - Semiconductor devices - Discrete devices - - -
Part 4: Microwave diodes and transistors
IEC 61340-5-1 - Electrostatics - Part 5-1: Protection of EN 61340-5-1 -
electronic devices from electrostatic
phenomena - General requirements
IEC/TR 61340-5-2 - Electrostatics - Part 5-2: Protection of - -
electronic devices from electrostatic
phenomena - User guide
IEC 60747-16-7 ®
Edition 1.0 2022-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-7: Microwave integrated circuits – Attenuators

Dispositifs à semiconducteurs –

Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-6116-3

– 2 – IEC 60747-16-7:2022  IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 10
4.1 General requirements . 10
4.1.1 Circuit identification and types . 10
4.1.2 General function description . 11
4.1.3 Manufacturing technology . 11
4.1.4 Package identification . 11
4.2 Application description . 11
4.2.1 Conformance to system and/or interface information . 11
4.2.2 Overall block diagram . 11
4.2.3 Reference data . 11
4.2.4 Electrical compatibility . 11
4.2.5 Associated devices . 12
4.3 Specification of the function . 12
4.3.1 Detailed block diagram – Functional blocks . 12
4.3.2 Identification and function of terminals . 12
4.3.3 Function description . 13
4.4 Limiting values (absolute maximum rating system) . 13
4.4.1 Requirements . 13
4.4.2 Electrical limiting values . 13
4.4.3 Temperatures . 14
4.5 Operating conditions (within the specified operating temperature range) . 15
4.6 Electrical characteristics . 15
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 16
5 Measuring methods . 16
5.1 General . 16
5.1.1 General precautions . 16
5.1.2 Characteristic impedance . 16
5.1.3 Handling precautions . 16
5.1.4 Types . 16
5.2 Transmission loss (L ) and insertion loss (L ) . 17
trans ins
5.2.1 Purpose . 17
5.2.2 Measuring methods . 17
5.3 Attenuation value (A ). 20
att
5.3.1 Purpose . 20
5.3.2 Measuring methods . 20
5.4 Attenuation range (A ) . 22
ran
5.4.1 Purpose . 22
5.4.2 Measuring methods . 22
5.5 Attenuation accuracy (A ), Attenuation accuracy (RMS) (A ) . 24
aur aur(RMS)
5.5.1 Purpose . 24
5.5.2 Measuring methods . 24

IEC 60747-16-7:2022  IEC 2022 – 3 –
5.6 Input return loss (L ) . 26
ret(in)
5.6.1 Purpose . 26
5.6.2 Measuring methods . 26
5.7 Output return loss (L ) . 29
ret(out)
5.7.1 Purpose . 29
5.7.2 Measuring methods . 29
5.8 Input power at n dB compression (P ). 31
i(ndB)
5.8.1 Purpose . 31
5.8.2 Circuit diagram . 31
5.8.3 Principle of measurement . 31
5.8.4 Circuit description and requirements . 31
5.8.5 Precautions to be observed . 31
5.8.6 Measurement procedure . 31
5.8.7 Specified conditions . 31
5.9 Intermodulation distortion (two-tone)(P /P ) . 32
n 1
5.9.1 Purpose . 32
5.9.2 Circuit diagram . 32
5.9.3 Principle of measurement . 32
5.9.4 Circuit description and requirements . 33
5.9.5 Precautions to be observed . 33
5.9.6 Measurement procedure . 33
5.9.7 Specified conditions . 33
5.10 Power at the intercept point (for intermodulation products) (P ) . 34
n(IP)
5.10.1 Purpose . 34
5.10.2 Circuit diagram . 34
5.10.3 Principle of measurement . 34
5.10.4 Circuit description and requirements . 34
5.10.5 Precautions to be observed . 34
5.10.6 Measurement procedure . 34
5.10.7 Specified conditions . 34
5.11 Relative phase shift (θ ) . 35
rel
5.11.1 Purpose . 35
5.11.2 Circuit diagram . 35
5.11.3 Principle of measurement . 35
5.11.4 Circuit description and requirements . 35
5.11.5 Precautions to be observed . 35
5.11.6 Measurement procedure . 36
5.11.7 Specified conditions . 36
5.12 Turn on time(t ), turn off time(t ), rise time(t ), fall time(t ) . 36
on off r(out) f(out)
5.12.1 Purpose . 36
5.12.2 Circuit diagram . 36
5.12.3 Principle of measurement . 36
5.12.4 Circuit description and requirements . 38
5.12.5 Precautions to be observed . 38
5.12.6 Measurement procedure . 38
5.12.7 Specified conditions . 38
5.13 Control voltage sensitivity (S ) . 38
vcont
– 4 – IEC 60747-16-7:2022  IEC 2022
5.13.1 Purpose . 38
5.13.2 Measuring methods . 38
Bibliography . 41

Figure 1 – Circuit diagram for the measurement of the transmission loss and insertion
loss (method 1) . 17
Figure 2 – Circuit diagram for the measurement of the scattering parameters . 19
Figure 3 – Circuit diagram for the measurement of the return loss (method 1) . 27
Figure 4 – Circuit diagram for the measurement of intermodulation distortion . 32
Figure 5 – Circuit diagram for the measurement of response times and switching times . 36
Figure 6 – Input and output waveforms . 37

Table 1 – Function of terminals . 12
Table 2 – Electrical limiting values . 14
Table 3 – Electrical limiting values in detail specification . 14
Table 4 – Temperatures . 14
Table 5 – Electrical characteristics . 15

IEC 60747-16-7:2022  IEC 2022 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-7: Microwave integrated circuits –
Attenuators
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-7 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/794/FDIS 47E/798/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 6 – IEC 60747-16-7:2022  IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IEC 60747-16-7:2022  IEC 2022 – 7 –
SEMICONDUCTOR DEVICES –
Part 16-7: Microwave integrated circuits –
Attenuators
1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit attenuators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD 1:2010
IEC 60747-4, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
reference state
thru state
state of minimum attenuation
3.2
attenuation state
state in which the attenuation is greater than that in the reference state

– 8 – IEC 60747-16-7:2022  IEC 2022
3.3
transmission loss
L
trans
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the transmission loss is expressed in decibels.
3.4
insertion loss
L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P ) in the reference state
o i
Note 1 to entry: In this region, ∆ P (dBm) =∆ P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
[SOURCE: IEC 60747-16-4:2004/AMD 1:2009, 3.1, modified – “at the switched on port” has
been deleted and “in the reference state” has been added.]
3.5
attenuation value
A
att
difference between the insertion loss and the transmission loss in the attenuation state
3.6
attenuation range
A
ran
difference between the maximum and minimum attenuation value
3.7
attenuation accuracy
A
aur
maximum difference between the measured and the nominal attenuation values
3.8
attenuation accuracy (RMS)
A
aur (RMS)
root-mean-square value of the attenuation accuracy
3.9
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.10
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]

IEC 60747-16-7:2022  IEC 2022 – 9 –
3.11
input power at n dB compression
P
i(ndB)
input power where the transmission loss increases by n dB compared with transmission loss in
linear region
Note 1 to entry: Usually n is 0,25 for voltage variable attenuators and 0,1 for digital step attenuators.
3.12
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
[SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.13
power at the intercept point (for intermodulation products)
P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
th
component and the n order intermodulation components, when the extrapolation is carried out
in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.14
relative phase shift
θ
rel
phase shift in the attenuation state relative to that in the reference state
3.15
switching time
3.15.1
turn on time
t
on
interval between the reference point on the leading edge of the control voltage and the reference
point on the trailing edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the reference state to
o i
the attenuation state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference point is 50 % of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.6, modified – Note 2 has been added, “the lower reference
point“ has been replaced by “the reference point”, “the upper reference point on the leading
edge” has been replaced by “the reference point on the trailing edge” and “when the state of
attenuator changes from the reference state to the attenuation state” has been added]

– 10 – IEC 60747-16-7:2022  IEC 2022
3.15.2
turn off time
t
off
interval between the reference point on the trailing edge of the control voltage and the reference
point on the leading edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the attenuation state
o i
to the reference state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference is 50% of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.7, modified – Note 2 has been added, “the upper reference
point“ has been replaced by “the reference point”, “the lower reference point on the trailing
edge” has been replaced by “the reference point on the leading edge” and “when the state of
attenuator changes from the attenuation state to the reference state” has been added]
3.16
response time
3.16.1
rise time
t
r(out)
interval between the lower reference point on the leading edge of the output voltage and the
upper reference point on the leading edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
[SOURCE: IEC 60747-16-4:2004, 3.8]
3.16.2
fall time
t
f(out)
interval between the upper reference point on the trailing edge of the output voltage and the
lower reference point on the trailing edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
[SOURCE: IEC 60747-16-4:2004, 3.9]
3.17
control voltage sensitivity
S
vcont
ratio of the change of attenuation value to the variation of the control voltage
4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
The identification of type (device name), the category of circuit and technology applied shall be
given.
IEC 60747-16-7:2022  IEC 2022 – 11 –
Microwave attenuators comprise two categories:
– Type A: voltage variable attenuators;
– Type B: digital step attenuators.
4.1.2 General function description
A general description of the function performed by the microwave integrated circuit attenuators
and the features for the application shall be made.
4.1.3 Manufacturing technology
The manufacturing technology, e.g. semiconductor monolithic integrated circuit, thin film
integrated circuit, micro-assembly, etc. shall be stated. This statement shall include details of
the semiconductor technologies such as Schottky-barrier diode, metal-semiconductor field
effect transistor (MESFET), Si bipolar transistor, etc.
IEC 60747-4 shall be referred to for terminology and letter symbols, essential ratings and
characteristics and measuring methods of such microwave devices.
4.1.4 Package identification
The following statements shall be made:
a) chip or packaged form;
b) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
c) principal package material, for example, metal, ceramic, plastic.
4.2 Application description
4.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or an
interface standard or a recommendation.
Detailed information concerning application systems, equipment and circuits such as very small
aperture terminal (VSAT) systems, broadcasting satellite (BS) receivers, microwave landing
systems, etc. should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given if necessary.
4.2.3 Reference data
The most important properties that permit comparison between derivative types should be given.
4.2.4 Electrical compatibility
It should be stated whether the integrated circuit is electrically compatible with other particular
integrated circuits, or families of integrated circuits, or whether special interfaces are required.
Details should be given concerning the type of input and output circuits, e.g. input/output
impedances, DC block, open-drain, etc. Interchangeability with other devices, if any, should
also be given.
– 12 – IEC 60747-16-7:2022  IEC 2022
4.2.5 Associated devices
If applicable, the following should be stated:
– devices necessary for correct operation (list with type number, name and function);
– peripheral devices with direct interfacing (list with type number, name and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
attenuators shall be given. The block diagram shall be composed of the following:
a) functional blocks;
b) mutual interconnections among the functional blocks;
c) individual functional units within the functional blocks;
d) mutual interconnections among the individual functional blocks;
e) function of each external connection;
f) inter-dependence between the separate functional blocks.
The block diagram shall identify the function of each external connection and, where no
ambiguity can arise, also show the terminal symbols and/or numbers. If the encapsulation has
metallic parts, any connection to them from external terminals shall be indicated. The
connections with any associated external electrical elements shall be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. Rules governing such diagrams can be obtained from IEC 60617.
4.3.2 Identification and function of terminals
All terminals shall be identified on the block diagram (supply terminals, input or output terminals,
input/output terminals). The terminal functions shall be indicated in Table 1.
Table 1 – Function of terminals
b
Terminal Terminal Terminal Function of terminal
Function
a
number symbol
designation
input/output Type of input/output
c d
identification circuits
a
A terminal designation to indicate the function of the terminal shall be given. Supply terminals, ground terminals,
blank terminals (with abbreviation NC), non-usable terminals (with abbreviation NU) shall be distinguished.
b
A brief indication of the terminal function shall be given:
– each function of multi-role terminals, i.e. terminals having multiple functions;
– each function of integrated circuit selected by mutual pin connections, programming and/or application of
function selection data to the function selection pin, such as mode selection pin.
c
Input, output, input/output and multiplex output terminals shall be distinguished.
d
The type of input and output circuit, e.g. input/output impedances, with or without DC block, etc., shall be
distinguished.
If the baseplate of the package is used as a ground terminal, the type of ground, e.g. analog
ground, digital ground, shall be stated in the column of Function in Table 1.

IEC 60747-16-7:2022  IEC 2022 – 13 –
EXAMPLE
Bias voltage(s) Control voltage(s)
Microwave
Input(s) NC
integrated
circuit
NU Output(s)
attenuator
Ground
4.3.3 Function description
The function performed by the circuit shall be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (e.g., set-up method, preference, etc.);
– interruption handling.
4.4 Limiting values (absolute maximum rating system)
4.4.1 Requirements
These limiting values shall contain the following:
– any interdependence of limiting conditions shall be specified;
– if externally connected and/or attached elements, for example heatsinks, have an influence
on the values of the ratings, the ratings shall be prescribed for the integrated circuit with the
elements connected and/or attached;
– if limiting values are exceeded for transient overload, the permissible excess and their
durations shall be specified;
– where minimum and maximum values differ during programming of the device, this shall be
stated;
, ground, etc.);
– all voltages are referenced to a specified reference terminal (U
SS
– if maximum and/or minimum values are quoted, the manufacturer shall indicate whether he
refers to the absolute magnitude or to the algebraic value of the quantity;
– the ratings given shall cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-dependent,
this dependence shall be indicated.
4.4.2 Electrical limiting values
Electrical limiting values shall be specified as shown in Table 2.

– 14 – IEC 60747-16-7:2022  IEC 2022
Table 2 – Electrical limiting values
Parameters Min. Max.
Bias voltage(s) (where appropriate) + +
Bias current(s) (where appropriate) +
Control supply voltage(s) (where appropriate) + +
Control supply current(s) (where appropriate) +
Terminal voltage(s) (where appropriate) + +
Terminal current(s) (where appropriate) +
Input power +
Power dissipation +
It is necessary to select either bias voltage(s) or bias current(s), either terminal voltage(s) or terminal
current(s).
The detail specification may indicate those values within Table 3.
Table 3 – Electrical limiting values in detail specification
a, b
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.
b
For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with respect to a special
electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement shall be made as to whether the
sequence in which these supplies are applied is significant: if so, the sequence shall be stated;
– when more than one supply is needed, the combinations of ratings for these supply voltages and
currents shall be stated.
4.4.3 Temperatures
The detail specification can indicate the following temperature values within Table 4:
a) operating temperature (ambient or reference-point temperature);
b) storage temperature;
c) channel temperature;
d) lead temperature (for soldering).
Table 4 – Temperatures
a
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.

IEC 60747-16-7:2022  IEC 2022 – 15 –
4.5 Operating conditions (within the specified operating temperature range)
Operating conditions are not to be inspected, but may be used for quality assessment purpose.
a) power supplies – positive and/or negative values (where appropriate);
b) initialization sequences (where appropriate), if special initialization sequences are
necessary, power supply sequencing and initialization procedure shall be specified;
c) input voltage(s) (where appropriate);
d) output current(s) (where appropriate);
e) voltage and/or current of other terminal(s);
f) external elements (where appropriate);
g) operating temperature range.
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified. Each characteristic shall be stated either:
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
The parameters should be specified corresponding to the type as shown in Table 5.
Table 5 – Electrical characteristics
Parameters Min. Typ. Max. Types
A B
Bias supply operating current(where appropriate)
+ + + +
Control supply operating current(where appropriate)
+ + + +
Insertion loss(L )
+ + + +
ins
Attenuation value (A )
+ + + + +
att
Attenuation range (A )
+ + + + +
ran
Attenuation accuracy (A )
+ + + +
aur
Attenuation accuracy RMS (A )
+ + + +
aur(RMS)
Input return loss (L )
+ + + +
ret(in)
Output return loss (L )
+ + + +
ret(out)
Input power at n dB compression (P ) + + + +
i(ndB)
Intermodulation distortion (P /P ) + + + +
n 1
Power at the intercept point (P )
+ + + +
n(IP)
Relative phase shift (θ )
+ + + +
rel
Turn on time (t )
+ + + +
on
Turn off time (t )
+ + + +
off
Rise time (t )
+ + + +
r(out)
Fall time (t )
+ + + +
f(out)
Control voltage sensitivity (S )
+ + + +
vcont
4.7 Mechanical and environmental ratings, characteristics and data
Any applicable mechanical and environmental ratings, characteristics and data specified in 5.10
and 5.11 of IEC 60747-1:2006 shall be stated.

– 16 – IEC 60747-16-7:2022  IEC 2022
4.8 Additional information
Where appropriate, the following information shall be given:
a) equivalent input and output circuit: Detail information shall be given regarding the type of
input and output circuits, e.g. input/output impedances, DC block, open-drain, etc;
b) internal protection: A statement shall be given to indicate whether the integrated circuit
contains internal protection against high static voltages or electrical fields;
c) capacitors at terminals: If capacitors for the input/output DC block are needed, these
capacitances shall be stated;
d) thermal resistance;
e) interconnections to other types of circuit: Where appropriate, details of the interconnections
to other circuits shall be given, for example, detector circuit for automatic gain control
(AGC), sense amplifiers, buffer, etc;
f) effects of externall
...