Semiconductor devices - Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source. Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. It is intended for military- and space-related applications.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren -- Teil 18: Ionisierende Strahlung (Gesamtdosis)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques -- Partie 18: Rayonnements ionisants (dose totale)
Présente une procédure d'essai permettant de définir les exigences des essais des circuits intégrés sous boîtier et des dispositifs discrets à semiconducteurs concernant les effets des rayonnements ionisants (dose totale) provenant d'une source de rayons gamma au cobalt-60. Propose un essai de recuit accéléré pour l'estimation des effets des rayonnements ionisants à faible débit de dose sur les dispositifs. Cet essai de recuit est important pour les faibles débits de dose ou certaines autres applications dans lesquelles les dispositifs peuvent présenter des effets liés au temps significatifs. Cet essai est destiné aux applications des domaines militaire et spatial.
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) (IEC 60749-18:2002)
Standards Content (Sample)
SLOVENSKI SIST EN 60749-18:2004
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing
radiation (total dose) (IEC 60749-18:2002)
ICS 31.080.01 Referenčna številka
SIST EN 60749-18:2004(en)
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
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EUROPEAN STANDARD EN 60749-18
EUROPÄISCHE NORM February 2003
Semiconductor devices –
Mechanical and climatic test methods
Part 18: Ionizing radiation (total dose)
Dispositifs à semiconducteurs – Halbleiterbauelemente –
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques Prüfverfahren
Partie 18: Rayonnements ionisants Teil 18: Ionisierende Strahlung
(dose totale) (Gesamtdosis)
(CEI 60749-18:2002) (IEC 60749-18:2002)
This European Standard was approved by CENELEC on 2003-02-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta,
Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-18:2003 E
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EN 60749-18:2003 - 2 -
The text of document 47/1657/FDIS, future edition 1 of IEC 60749-18, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-18 on 2003-02-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2003-11-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2006-02-01
The text of the International Standard IEC60749-18:2002 was approved by CENELEC as a European
Standard without any modification.
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Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Rayonnements ionisants (dose totale)
Semiconductor devices –
Mechanical and climatic test methods –
Ionizing radiation (total dose)
© IEC 2002 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
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Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: email@example.com Web: www.iec.ch
Commission Electrotechnique Internationale PRICE CODE
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Pour prix, voir catalogue en vigueur
For price, see current catalogue
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60749-18 © IEC:2002 – 3 –
FOREWORD . 5
1 Scope . 7
2 Terms and definitions . 7
3 Test apparatus.9
3.1 Radiation source. 9
3.2 Dosimetry system . 9
3.3 Electrical test instruments. 9
3.4 Test circuit board(s). 9
3.6 Interconnect or switching system .11
3.7 Environmental chamber .11
4.1 Sample selection and handling .11
4.2 Burn-in .13
4.3 Dosimetry measurements .13
4.4 Lead/aluminium (Pb/Al) container .13
4.5 Radiation level(s).13
4.6 Radiation dose rate .15
4.6.1 Condition A.15
4.6.2 Condition B.15
4.6.3 Condition C.15
4.7 Temperature requirements.15
4.8 Electrical performance measurements .15
4.9 Test conditions .17
4.9.1 In-flux testing.17
4.9.2 Remote testing.17
4.9.3 Bias and loading conditions .17
4.10 Post-irradiation procedure .17
4.11 Extended room temperature anneal test .19
4.11.1 Need to perform an extended room temperature anneal test .19
4.11.2 Extended room temperature anneal test procedure .19
4.12 MOS accelerated annealing test .21
4.12.1 Need to perform accelerated annealing test .21
4.12.2 Accelerated annealing test procedure .23
4.13 Test report.23
5 Summary .25
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60749-18 © IEC:2002 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 18: Ionizing radiation (total dose)
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-18 has been prepared by IEC technical committee 47:
The text of this standard is based on the following documents:
FDIS Report on voting
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until
2007. At this date, the publication will be
• replaced by a revised edition, or
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60749-18 © IEC:2002 – 7 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 18: Ionizing radiation (total dose)
This part of IEC 60749 provides a test procedure for defining requirements for testing
packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing
radiation (total dose) effects from a cobalt-60 ( Co) gamma ray source.
This standard provides an accelerated annealing test for estimating low dose rate ionizing
radiation effects on devices. This annealing test is important for low dose rate or certain other
applications in which devices may exhibit significant time-dependent effects.
This standard addresses only steady-state irradiations, and is not applicable to pulse type
It is intended for military- and space-related applications.
This standard may produce severe degradation of the electrical properties of irradiated
devices and thus should be considered a destructive test.
2 Terms and definitions
For the purposes of this part of IEC 60749, the following terms and definitions apply.
ionizing radiation effects
changes in the electrical parameters of a device or integrated circuit resulting from radiation-
NOTE These are also referred to as total dose effects.
electrical measurements made on devices during irradiation exposure
non in-flux test
electrical measurements made on devices at any time other than during irradiation
electrical measurements made on devices that are physically removed from the radiation
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60749-18 © IEC:2002 – 9 –
significant degradation in electrical parameters caused by the growth or annealing or both of
radiation-induced trapped charge after irradiation
NOTE Similar effects also take place during irradiation.
accelerated annealing test
procedure utilizing elevated temperature to accelerate time-dependent effects
3 Test apparatus
The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit
board(s), cabling, interconnect board or switching system, an appropriate dosimetry
measurement system, and an environmental chamber (if required for time-dependent effects
measurements). Adequate precautions shall be observed to obtain an electrical measurement
system with sufficient insulation, ample shielding, satisfactory grounding, and suitable low
3.1 Radiation source
The radiation source used in the test shall be the uniform field of a Co gamma ray source.
Uniformity of the radiation field in the volume where devices are irradiated shall be within
±10 % as measured by the dosimetry system, unless otherwise specified. The intensity of the
gamma ray field of the Co source shall be known with an uncertainty of no more than ±5 %.
Field uniformity and intensity can be affected by changes in the location of the device with
respect to the radiation source and the presence of radiation absorption and scattering
3.2 Dosimetry system
An appropriate dosimetry system shall be provided that is capable of carrying out the
measurements called for in 4.2.
3.3 Electrical test instruments
All instrumentation used for electrical measurements shall have the stability, accuracy, and
resolution required for accurate measurement of the electrical parameters. Any instrument-
ation required to operate in a radiation environment shall be appropriately shielded.
3.4 Test circuit board(s)
Devices to be irradiated shall either be mounted on or connected to circuit boards together
with any associated circuitry necessary for device biasing during irradiation or for in situ
measurements. Unless otherwise specified, all device input terminals and any others
which may affect the radiation response shall be electrically connected during irradiation,
i.e. not left floating.
The geometry and materials of the completed board shall allow uniform irradiation of the
devices under test. Good design and construction practices shall be used to prevent
oscillations, minimize leakage currents, prevent electrical damage and obtain accurate
measurements. Only sockets that are radiation resistant and do not exhibit significant
leakages (relative to the devices under test) shall be used to mount devices and associated
circuitry to the test board(s).
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60749-18 © IEC:2002 – 11 –
All apparatus used repeatedly in radiation fields shall be checked periodically for physical or
electrical degradation. Components which are placed on the test circuit board, other than
devices under test, shall be insensitive to the accumulated radiation or they shall be shielded
from the radiation. Test fixtures shall be made such that materials will not perturb the
uniformity of the radiation field intensity on the devices under test.
Leakage current shall be measured outside the field of radiation. With no devices installed in
the sockets, the test circuit board shall be connected to the test system such that all expected
sources of noise and interference are operative. With the maximum specified bias for the test
device applied, the leakage current between any two terminals shall not exceed 10 % of the
lowest current limit value in the pre-irradiation device specification.
Test circuit boards used to bias devices during accelerated annealing must be capable of
withstanding the temperature requirements of the accelerated annealing test and shall be
checked before and after testing for physical and electrical degradation.
Cables connecting the test circuit boards in the radiation field to the test instrumentation shall
be as short as possible. If long cables are necessary, line drivers may be required. The
cables shall have low capacitance and low leakage to ground, and low leakage between
3.6 Interconnect or switching system
This system shall be located external to the radiation environment location, and provides the
interface between the test instrumentation and the devices under test. It is part of the entire
test system and subject to the limitation specified in 3.4 for leakage between terminals.
3.7 Environmental chamber
The environmental chamber for time-dependent effects testing, if required, shall be capable of
maintaining the selected accelerated annealing temperature within ±5 °C.
The test devices shall be irradiated and subjected to accelerated annealing testing (if required
for time-dependent effects testing) as specified by a test plan. This plan shall specify the
device description, irradiation conditions, device bias conditions, dosimetry system, operating
conditions, measurement parameters and conditions and accelerated annealing test con-
ditions (if required).
4.1 Sample selection and handling
Only devices that have passed the electrical specifications as defined in the test plan shall be
submitted to radiation testing. Unless otherwise specified, the test samples shall be randomly
selected from the parent population and identically packaged. Each part shall be individually
identifiable to enable pre- and post-irradiation comparison. For device types that are ESD-
sensitive, proper handling techniques shall be used to prevent damage to the devices.
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60749-18 © IEC:2002 – 13 –
For some devices, there are differences in the total dose radiation response before and after
burn-in. Unless it has been shown by prior characterization or by design that burn-in has a
negligible effect (parameters remain within post-irradiation specified electrical limits) on the
total dose radiation response, then one of the following functions must take place:
a) the manufacturer shall subject the radiation samples to the specified burn-in conditions
prior to conducting total dose radiation testing; or
b) the manufacturer shall develop a correction factor, (which is acceptable to the parties to
the test) taking into account the changes in total dose response resulting from subjecting
the product to burn-in. The correction factor shall then be used to accept the product for
total dose response without subjecting the test samples to burn-in.
4.3 Dosimetry measurements
The radiation field intensity at the location