47 - Semiconductor devices

IEC 62433-6:2020 describes the extraction flow for deriving an immunity macro-model of an Integrated Circuit (IC) against conducted Electrostatic Discharge (ESD) according to IEC 61000-4-2 and Electrical Fast Transients (EFT) according to IEC 61000-4-4.
The model addresses physical damages due to overvoltage, thermal damage and other failure modes. Functional failures can also be addressed. This model allows the immunity simulation of the IC in an application. This model is commonly called "Int...view more

IEC 60747-17:2020 specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler.
It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation.
This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision.
This edition includes the following significant te...view more

IEC 60749-20:2020 is available as IEC 60749-20:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-20:2020 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This edition includes the following significant technical changes with respect to the previous edition:
- inco...view more

IEC 60749-30:2020 is available as IEC 60749-30:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.
IEC 60749-30:2020 establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing.
The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder...view more

IEC 60749-41:2020 specifies the procedural requirements for performing valid endurance, retention and cross-temperature tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or are developed using knowledge-based methods such as in JESD94.

IEC 60747-5-5:2020(E) specifies the terminology, essential ratings, characteristics, safety tests, as well as the measuring methods for photocouplers.
Note: The term "optocoupler" can also be used instead of "photocoupler".
This edition includes the following significant technical changes with respect to the previous edition:
a) optional data sheet basic insulation rating in accordance with IEC 60664-1:2007, 6.1.3.5;
b) editorial corrections on the use of VIORM;
c) editorial corrections on ...view more

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.

IEC 60749-15:2020 is available as IEC 60749-15:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.
IEC 60749-15:2020 describes a test used to determine whether encapsulated solid state devices used for through-hole mounting can withstand the effects of the temperature to which they are subjected during soldering of their leads by using wave soldering. In order to establish a standard test proce...view more

The contents of the corrigendum of September 2020 have been included in this copy.

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

IEC 62435-8:2020 on long-term storage is applied to passive electronic devices in long-term storage that can be used as part of obsolescence mitigation strategy. Long-term storage refers to a duration that can be more than 12 months for product scheduled for storage. Storage typically begins when components are packed at the originating supplier where the pack date or date code are assigned to the product. It is the responsibility of the distributor and the customer to control and manage the agi...view more

IEC 62047-37:2020 specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under mechanical stress and strain, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of direct piezoelectric p...view more

IEC 62435-3:2020 describes the aspects of data storage that are necessary for successful use of electronic components being stored after long periods while maintaining traceability or chain of custody. It defines what sort of data needs to be stored alongside the components or dies and the best way to do so in order to avoid losing data during the storage period. As defined in this document, long-term storage refers to a duration that can be more than twelve months for products scheduled for lon...view more

IEC 60747-18-2:2020(E) specifies the evaluation process of lens-free CMOS photonic array sensor package modules. This document includes the measurement environment of each process, statistical analysis of test data, middle layer effect under various user light, evaluation of calibrated lens-free CMOS photonic array sensor package modules, and test report.

IEC 62779-4:2020 defines general requirements on the electrical performances of a semiconductor interface for capsule endoscope using galvanic coupling human body communication. It includes general and functional specifications of the interface. The semiconductor interface that is covered in this document is the interface to handle or deliver an electrical signal between the capsule endoscope inside the human body and the HBC modem in the receiving device outside the human body.
NOTE Additional...view more

IEC 60747-5-9:2019(E) specifies the measuring method of the internal quantum efficiency (IQE) of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes the relative external quantum efficiencies (EQEs) measured at cryogenic temperatures and at an operating temperature, which is called temperature-dependent electroluminescence (TDEL). In order to identify the reference IQE of 100 %, t...view more

IEC 60747-18-3:2019(E) specifies the fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system for bio analysis. This document includes the measurement set-up, measurement and calculation at initial state flow, criteria of the fluidic system for quality assurance, measurement and calculation at steady-state flow, and test report.

IEC 60747-5-11:2019(E) specifies the measuring methods of radiative and nonradiative currents of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes the internal quantum efficiency (IQE) as a function of current, whose measurement methods are discussed in other documents.

IEC 60747-5-10:2019(E) specifies the measuring method of the internal quantum efficiency (IQE) of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes only the relative external quantum efficiency (EQE) measured at an operating room temperature. In order to identify the reference IQE, an operating current corresponding to the injection efficiency of 100 % is found and the radiative...view more