IEC 62047-37:2020

Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

IEC 62047-37:2020 specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under mechanical stress and strain, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of direct piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e. piezoelectric thin films used as acoustic sensors, or as cantilever-type sensors.
This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 37: Méthodes d’essai d’environnement des couches minces piézoélectriques MEMS pour les applications de type capteur

L’IEC 62047-37:2020 spécifie les méthodes d’essai permettant d’apprécier la durabilité des matériaux des couches minces piézoélectriques MEMS soumis à la contrainte d’environnement de température et d’humidité, à la contrainte et à la déformation mécaniques, ainsi que les conditions d’essai définissant une évaluation appropriée de la qualité. Plus spécifiquement, le présent document spécifie les méthodes et conditions d’essai permettant de mesurer la durabilité d’un DUT dans différentes conditions de température et d’humidité, et sous différentes tensions appliquées. Il applique en outre les appréciations aux propriétés liées à l’effet direct de la piézoélectricité, pour des couches minces piézoélectriques formées principalement à base de substrats de silice, c’est-à-dire les couches minces piézoélectriques utilisées comme capteurs acoustiques, ou comme capteurs de vibrations.
Le présent document ne couvre pas les évaluations de fiabilité, telles que les méthodes permettant de prévoir la durée de vie d’une couche mince piézoélectrique en se basant sur la loi de Weibull.

General Information

• Status: Published
• Publication Date: 27-Apr-2020
• ICS: 31.080.99 - Other semiconductor devices
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 28-Apr-2020
• Completion Date: 22-May-2020

Overview

IEC 62047-37:2020 is an international standard developed by the International Electrotechnical Commission (IEC) focusing on environmental test methods for MEMS piezoelectric thin films used in sensor applications. This standard is part 37 of the IEC 62047 series covering semiconductor devices and micro-electromechanical systems (MEMS). It provides standardized procedures to assess the durability and quality of MEMS piezoelectric thin films, specifically under environmental stresses such as temperature, humidity, mechanical stress, and applied voltage. These thin films are primarily utilized in acoustic sensors and cantilever-type sensors based on silicon substrates.

The standard plays a vital role in ensuring the performance stability of piezoelectric MEMS devices by defining test protocols that help manufacturers and researchers evaluate the impact of environmental factors on piezoelectric properties. It complements IEC 62047-30, which addresses measurement methods for the electro-mechanical characteristics of MEMS piezoelectric thin films.

Key Topics

• Durability Testing Under Environmental Stress
  IEC 62047-37 specifies tests that subject devices under test (DUTs) to high/low temperature cycles, humidity conditions, mechanical strain, and electrically induced stress. The standard includes:

  • High-temperature bias tests
  • High-temperature and high-humidity bias tests
  • Temperature cycling tests
  • Soldering heat tests simulating real manufacturing and operational environments

• Measurement of Piezoelectric Properties
  The assessment framework involves measuring piezoelectric parameters before and after environmental stress exposure, based on methods outlined in IEC 62047-30. This ensures changes in direct piezoelectric characteristics are accurately tracked.

• Test Conditions and Setup
  The document outlines detailed procedures for setting up DUTs, defining test durations, number of devices to test, and environmental chamber configurations. It also includes specifications for:

  • Temperature and humidity ranges
  • Applied voltage levels during bias testing
  • Dielectric withstand testing circuits

• Quality Assessment, Not Reliability Projection
  IEC 62047-37 focuses on immediate durability and quality evaluation rather than long-term lifetime predictions or reliability distributions such as Weibull analysis.

Applications

IEC 62047-37:2020 is critical for any organization involved in the development, manufacturing, or quality assurance of MEMS piezoelectric thin film devices used in various sensor applications:

• Acoustic Sensors
  For use in microphones, ultrasound devices, and other applications requiring sensitive acoustic detection where piezoelectric thin film stability impacts performance.

• Cantilever-Type Sensors
  In environmental sensing, biomedical devices, and mechanical detection systems where MEMS cantilevers integrated with piezoelectric films provide signal conversion.

• Semiconductor Fabrication and Assembly
  Test guidelines include heat profiles mimicking solder reflow processes, helping manufacturers ensure their devices can withstand assembly stresses.

• Quality Control in MEMS Production
  Facilitates consistent manufacturing standards by employing reproducible environmental testing relevant to operational conditions.

Related Standards

• IEC 62047-30
  Measurement methods for electro-mechanical conversion characteristics of MEMS piezoelectric thin films, which complements the environmental testing procedures of part 37.

• IEC Standards on Semiconductor Environmental Testing
  Incorporates test conditions and requirements adapted from general semiconductor device and ceramic dielectric capacitor environmental standards, ensuring cross-industry compatibility.

• Others in IEC 62047 Series
  Cover various aspects of MEMS devices and testing methods, offering a comprehensive framework for micro-electromechanical device standardization.

Summary

IEC 62047-37:2020 establishes essential environmental testing protocols for evaluating the durability of MEMS piezoelectric thin films used in sensor applications under real-world operational stresses. By providing systematic test procedures to measure piezoelectric properties after exposure to temperature, humidity, mechanical strain, and applied voltages, it ensures device reliability and quality assurance. This standard supports manufacturers, engineers, and researchers in optimizing MEMS sensor performance and robustness, facilitating innovation in acoustic and cantilever sensor technologies with confidence in their environmental endurance.

Standards Content (Sample)

IEC 62047-37 ®
Edition 1.0 2020-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor
application
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 37: Méthodes d’essai d’environnement des couches minces
piézoélectriques MEMS pour les applications de type capteur

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IEC 62047-37 ®
Edition 1.0 2020-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor

application
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 37: Méthodes d’essai d’environnement des couches minces

piézoélectriques MEMS pour les applications de type capteur

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99; 31.140 ISBN 978-2-8322-8231-1

– 2 – IEC 62047-37:2020 © IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Testing procedure . 6
4.1 General . 6
4.2 Initial measurements . 7
4.3 Tests . 7
4.3.1 DUT setup and environmental conditions . 7
4.3.2 Test duration . 7
4.3.3 Number of tests and number of DUTs . 7
4.4 Post-treatment . 8
4.5 Final measurements . 8
5 Environmental and dielectric withstand testing . 8
5.1 Environmental testing . 8
5.1.1 General . 8
5.1.2 High-temperature bias test . 9
5.1.3 High-temperature and high-humidity bias test . 9
5.1.4 High-temperature storage . 9
5.1.5 Low-temperature storage . 10
5.1.6 High-temperature and high-humidity storage . 10
5.1.7 Soldering heat test . 10
5.1.8 Temperature cycling test . 11
5.2 Dielectric withstand testing . 12
Annex A (informative) Report of test results . 14
A.1 General . 14
A.2 High-temperature bias test . 14
Bibliography . 16

Figure 1 – Flow of the testing procedure . 7
Figure 2 – Temperature profile for reflow soldering with lead-free solder . 11
Figure 3 – Temperature profile of the temperature cycling test . 12
Figure 4 – Example of a dielectric withstand test circuit for DC voltage . 13
Figure A.1 – Measurement setup of direct piezoelectric coefficient . 15

Table 1 – Selectable test conditions . 9
Table 2 – Selectable test conditions . 10
Table 3 – Soldering heat test condition . 10
Table 4 – Conditions of temperature profile for reflow soldering with lead-free solder . 11
Table A.1 – Example of test conditions for high temperature bias test . 15
Table A.2 – High temperature bias test: 23 °C and 100 °C . 15

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 37: Environmental test methods of MEMS
piezoelectric thin films for sensor application

FOREWORD
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International Standard IEC 62047-37 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/355/FDIS 47F/357/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – IEC 62047-37:2020 © IEC 2020
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
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INTRODUCTION
Piezoelectric MEMS technology belongs to an interdisciplinary field founded on a wide range
of element technologies including piezoelectric thin film materials, thin film deposition and
microfabrication processes, device design, and system formulation. Along with the increased
sophistication of MEMS functionality, research on MEMS applications for piezoelectric thin
films, such as Pb(Zr,Ti)O (PZT) or AlN, has become increasingly popular in recent years.
MEMS piezoelectric thin films have the capability of configuring simple compact devices that
have a lower power consumption, higher sensitivity, and quicker response than conventional
bulk-type, electrostatic, or electromagnetic thin films. However, their device performance is
greatly affected by the properties of the thin film materials.
Several test methods for thin film materials have been established to date. Among these, the
overriding property that determines device performance is the material’s piezoelectric
property. Standardization of IEC 62047-30 (Semiconductor devices – Micro-electromechanical
devices – Part 30: Measurement methods of electro-mechanical conversion characteristics of
MEMS piezoelectric thin film) has been promoted for the purpose of precisely measuring and
evaluating MEMS piezoelectric thin films using simply structured test pieces and inexpensive
equipment.
In order to realize a viable MEMS piezoelectric thin film, it is essential to gain a clear
understanding of how its piezoelectric properties change as a result of the environmental
stress of temperature and humidity, and degradation in the piezoelectric material over time at
its surfaces and interfaces.
The following summarizes the features of this standard.
• The degree of degradation in a device under test (DUT) is evaluated by measuring the
piezoelectric properties of the DUT before and after applying the environmental stress of
temperature and humidity using the measurement methods in IEC 62047-30.
• Test conditions for moist heat and dielectric withstand tests are derived from existing
standards for semiconductor devices and fixed capacitors of ceramic dielectric.

– 6 – IEC 62047-37:2020 © IEC 2020
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 37: Environmental test methods of MEMS
piezoelectric thin films for sensor application

1 Scope
This part of IEC 62047 specifies test methods for evaluating the durability of MEMS
piezoelectric thin film materials under the environmental stress of temperature and humidity
and under mechanical stress and strain, and test conditions for appropriate quality
assessment. Specifically, this document specifies test methods and test conditions for
measuring the durability of a DUT under temperature and humidity conditions and applied
voltages. It further applies to evaluations of direct piezoelectric properties in piezoelectric thin
films formed primarily on silicon substrates, i.e. piezoelectric thin films used as acoustic
sensors, or as cantilever-type sensors.
This document does not cover reliability assessments, such as methods of predicting the
lifetime of a piezoelectric thin film based on a Weibull distribution.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 62047-30, Semiconductor devices – Micro-electromechanical devices – Part 30:
Measurement methods of electro-mechanical conversion characteristics of MEMS
piezoelectric thin film
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Testing procedure
4.1 General
The degree of degradation in a device under test (DUT) is evaluated by measuring the
piezoelectric properties of the DUT before and after applying the environmental stress of
temperature and humidity. Figure 1 shows the general flow of the testing procedure.

Figure 1 – Flow of the testing procedure
4.2 Initial measurements
The methods of measurement used in the environmental tests shall conform to the methods
described in IEC 62047-30. The ambient conditions for measurements shall include an
ambient temperature of 25 °C ± 3 °C, a relative humidity of 45 % to 75 %, and an atmospheric
pressure of 86 kPa to 106 kPa.
4.3 Tests
4.3.1 DUT setup and environmental conditions
For tests requiring continuous operation of the DUT, the DUT is placed in a test bed that can
be adjusted to the prescribed temperature and humidity to conditions. The test conditions are
monitored to verify that no abnormalities occur when the chamber environment reaches the
prescribed conditions. For tests that do not require continuous operations of the DUT, the
DUT may be placed in the test bed and the test bed may be deposited in the chamber, but the
test bed need not be put in the chamber. When depositing and removing the DUT and test
bed for either test, the operator shall ensure that:
• water does not drip onto the DUT;
• the DUT is not directly immersed in water.
4.3.2 Test duration
Test duration is described in 5.1.1 to 5.1.7.
4.3.3 Number of tests and number of DUTs
Specifications for the number of tests and the number of DUTs shall take the failure
mechanism, failure distribution, and other factors anticipated in each test into account. When
intermediate measurements are required, such measurements may be performed in
accordance with the following timetable:
• 24 h (+8 h, −0 h);
• 48 h (+8 h, −0 h);
• 96 h (+24 h, −0 h);
• 168 h (+48 h, −0 h);
– 8 – IEC 62047-37:2020 © IEC 2020
• 480 h (+72 h, −0 h).
Here, the time spent removing the DUT and conducting the intermediate measurements shall
be omitted from the test duration.
4.4 Post-treatment
After completion of the tests, first the application of mechanical stress and strain, or vibration,
is halted, and then the DUT is removed from the chamber and returned to standard conditions.
However, this shall not apply to cases in which the DUT clearly recovers from its degraded
state after the application of mechanical stress and strain, or vibration, is halted at the testing
temperature because a correct result is not possible.
4.5 Final measurements
The methods of measurement used in moist heat tests shall conform to the methods set forth
in IEC 62047-30. The degraded state of a DUT is evaluated by comparing the final
measurements to the initial measurements. The environmental conditions for measurements
shall include:
• ambient temperature: 25 °C ± 3 °C;
• relative humidity: 45 % to 75 %;
• atmospheric pressure: 86 kPa to 106 kPa.
As a general rule, final measurements shall be conducted within 48 h from the completion of
tests after verifying that the surface of the DUT is dry. When conducting intermediate
measurements prior to the final measurements, the DUT shall be deposited back into the
testing chamber within 96 h after being removed for measurements. Final measurements are
preferably completed within 96 h after halting voltage application to the DUT.
5 Environmental and dielectric withstand testing
5.1 Environmental testing
5.1.1 General
Equipment used in these experiments includes:
• a chamber or a room capable of maintaining predetermined test temperature and humidity
and allowable temperature and humidity;
• a vibrator or an external actuator for generating a predetermined deflection of the
unimorph beam;
• a mechanical stress and strain, or vibration, application equipment having sufficient
resistance for withstanding the test temperatures and humidity.
The chamber shall be capable of maintaining its entire interior at the set temperature ±2 °C
and the set humidity ±5 % during the test. The applied mechanical stress and strain, and the
operating method shall be established with consideration for the limits of the DUT. The
application circuit shall be considered to account for load conditions and other factors in order
that the operating state of the DUT be suitably maintained.
NOTE 1 The degree of degradation in a device under test (DUT) is evaluated by measuring the piezoelectric
properties of the DUT before and after applying the environmental stress of temperature and humidity.
NOTE 2 The degree of degradation in a DUT is evaluated using the measurement methods in IEC 62047-30.
NOTE 3 A test circuit for testing a plurality of DUT simultaneously is designed so that failure of one DUT during a
test does not affect the other DUT.

5.1.2 High-temperature bias test
The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to operate at
a high temperature. Mechanical stress and strain (beam deflection) is applied to the
piezoelectric film under a high temperature to evaluate the effects of these conditions over a
long duration. The conditions applied to the DUT, including the vibration mode (resonant
mode or non-resonant mode), input waveform, the frequency, and the like shall be determined
based on the expected application of the sensor. The following test conditions shall be
applied:
• test temperature: 85 °C or higher;
• test duration: 96 h or longer.
The example of this test result is provided in Annex A.
NOTE 1 Sample test temperatures can include 85 °C, 105 °C and 125 °C.
NOTE 2 Sample test durations can include 96 h, 480 h and 960 h.
5.1.3 High-temperature and high-humidity bias test
The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to operate
under high temperature and high humidity. Mechanical stress and strain (beam bending) is
applied to the piezoelectric thin film under high temperature and humidity and the effects of
these conditions are assessed over a long duration. The humidity test determines whether
electronic products have sufficient electrical and mechanical properties to withstand heavy
conditions with high relative humidity, regardless of whether condensation is present. The
humidity test may also be used to inspect the resistance of the DUT to various corrosive
actions. Based on the expected application of the sensor, the measurement parameters shall
be determined as follows:
• resonant mode or non-resonant mode;
• input waveform;
• frequency.
Table 1 shows the selectable test conditions.
Table 1 – Selectable test conditions
Condition Temperature Humidity
(°C) (%)
A 40 ± 2 90 ± 5
B 60 ± 2 90 ± 5
C 85 ± 2 85 ± 5
The test parameters shall be determined as follows:
• test strain: maximum strain of piezoelectric thin films applied by bending beam (operation
max.);
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.4 High-temperature storage
The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand
storage at a high temperature. The piezoelectric thin film is kept under a high temperature for

– 10 – IEC 62047-37:2020 © IEC 2020
a long duration, and the effects of these conditions are evaluated. The following test
conditions shall be applied:
• test temperature: 85 °C or higher;
• test duration: 96 h or longer.
NOTE 1 Sample test temperatures include 85 °C, 105 °C and 125 °C.
NOTE 2 Sample test durations include 96 h, 480 h and 960 h.
5.1.5 Low-temperature storage
The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand
storage at a low temperature. The piezoelectric thin film is kept under a low temperature for a
long duration, and the effects of these conditions are evaluated. The following test conditions
shall be applied:
• test temperature: −20 °C or lower;
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.6 High-temperature and high-humidity storage
The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand
storage under a high temperature and high humidity. The piezoelectric thin film is maintained
under high temperature and high humidity conditions for a long duration, and the effects of
these conditions are evaluated. Table 2 shows the selectable test conditions.
Table 2 – Selectable test conditions
Condition Temperature Humidity
(°C) (%)
A 40 ± 2 90 ± 5
B 60 ± 2 90 ± 5
C 85 ± 2 85 ± 5
The test parameters shall be determined as follows:
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.7 Soldering heat test
The objective of this test is to evaluate the resistance of MEMS piezoelectric thin film to heat
generated during soldering. The temperature and time required for replicating thermal
conditions expected in reflow soldering are specified in Table 3.
Table 3 – Soldering heat test condition
Specified temperature Hold time
(°C) (s)
Test conditions 265 ± 5 30 ± 5

Figure 2 shows an example of a temperature profile assuming reflow conditions for lead-free
solder. Measurement should be done at a room temperature, after point D. The test may be
repeated a maximum of three times for a duration of 10 s.

Key
A starting to add heat
B finishing to add heat
C starting to cool
D finishing to cool
Figure 2 – Temperature profile for reflow soldering with lead-free solder
Table 4 shows a condition of temperature profile for reflow soldering with lead-free solder.
Table 4 – Conditions of temperature profile for reflow soldering with lead-free solder
Time Ramp rate Temperature
(s) (°C/s) (°C)
A 0 20
B 240 265
C 270 265
D 510 20
A-B 1,02
C-D 1,02
5.1.8 Temperature cycling test
The objective of this test is to evaluate the resistance of MEMS piezoelectric thin film to
cycling between high temperature and low temperature extremes. The test method used here

– 12 – IEC 62047-37:2020 © IEC 2020
is in accordance with IEC 60068-2-14:2009, Clause 8 (Test Nb: Change of temperature with
specified rate of change).
One cycle of test is as follows:
• the temperature of the testing chamber is lowered at a prescribed ramp-down rate R to a
cold temperature T ;
A
• after the internal temperature has stabilized, the DUT is exposed to cold temperature for a
specified time t ;
• the temperature of the chamber is raised at a prescribed ramp-up rate R to a hot
temperature T ;
B
• after the internal temperature has stabilized, the DUT is exposed to hot temperature for
;
the specified time t
• the temperature in the chamber is then lowered at a prescribed rate to 25 °C ± 5 °C.
Figure 3 shows the temperature profile of the temperature cycling test. Measurement should
be carried out at room temperature after the heating or cooling process. The test is
continually repeated N times.
Key
1 hot temperature T : 85 °C (+15, −0)
B
: −20 °C (+0, −10)
2 cold temperature T
A
3 upper or lower soak time t : 1 h or longer
4 ramp-up or down rate R: 100 °C/h
5 room temperature T : 20 °C (+10, −10)
R
Figure 3 – Temperature profile of the temperature cycling test
NOTE The number of cycles is arbitrary.
5.2 Dielectric withstand testing
The objective of this test is to evaluate the resistance of MEMS piezoelectric thin film to a
voltage exceeding the rated voltage. The applied voltage and operating method shall be
established with consideration for the limits of the DUT. Withstand voltage is defined when the
leakage current between the top and bottom electrodes increases to 10 times larger than the

initial leakage current at 100 kV/cm. The following test parameters and results shall be
indicated with the value of withstand voltage:
• electrode (material, size, shape, thickness);
• input waveform and /or increasing ratio of applied voltage;
• polarity of applied voltage (positive or negative on a top electrode);
• I-V curves;
• photographs of electrodes after withstand test;
• test temperature and humidity.
EXAMPLE The voltage increasing rate is set to 2 V/s, the prescribed voltage value to 1,2 times the rated voltage,
and the prescribed time to 60 s.
A test circuit for testing a plurality of DUT simultaneously is designed so that failure of one
DUT during a test does not affect the other DUT.
Figure 4 shows the example of a dielectric withstand test circuit for DC voltage.

Key
1 leakage current tester with variable DC voltage source and voltmeter
2 DUT
Figure 4 – Example of a dielectric withstand test circuit for DC voltage

– 14 – IEC 62047-37:2020 © IEC 2020
Annex A
(informative)
Report of test results
A.1 General
Annex A describes an example of the environmental test of the piezoelectric thin films.
Clause A.2 summarizes the procedures and the measurement results of the high-temperature
bias test.
A.2 High-temperature bias test
The following steps show an example of measuring procedures of a high-temperature bias
test. Direct piezoelectric measurements are conducted using a three-point bending system as
d
shown in Figure A.1. This test method can derive the same piezoelectric coefficient of e
31,f
as that described in IEC 62047-30.
a) The sample is a piezoelectric 2-μm-thick PZT thin film deposited by sol-gel process.
b) The specimen is the unimorph beam of 625 μm thickness of (100) single crystal silicon
substrate.
c) Thicknesses of the top and bottom platinum electrodes are 0,2 μm and 0,05 μm
respectively.
d) The sample is cut out to the beam shape of 40 mm length and 2 mm width by a dicing saw
along with <110> crystal orientation.
e) Two points of the unimorph beam are clamped by the triangular-shaped clamp.
f) The centre of the beam is placed on the tip of the shaker and the bending deformation is
applied by the vibration of the shaker.
g) Vibration amplitude is measured by a laser Doppler vibrometer.
h) Maximum stress S on the PZT thin films is calculated with the following equation:
Ph l 6h
s0 s
Su
2EI
l
where P, h , l , u are load, thickness, length of the fixed parts, deflection, and E and I are
s 0
Young’s modulus and area moment of inertia of Si, respectively.
i) Piezoelectric coefficient e is defined by the following equation:
31,f
d
e =
31,f
EE
ss+
11 12
E E
where d is the transverse piezoelectric coefficient, and s and s are the elastic
31 11 12
compliances of the piezoelectric thin film at constant electric field, respectively. In order to
clarify the piezoelectric coefficient derived from direct piezoelectric effect, piezoelectric
d
coefficient e is written as e .
31,f 31,f
d
j) Direct piezoelectric coefficient of e is calculated with the following equation:
31,f
l Q
d 0
e =
31,f
u
31( −−ν ) 2l l l hW
s ( 0 1) 1s
==
where l is the length of the electrode, W is the width of the beam, ν is the Poisson’s ratio
1 s
of silicon, and Q is the generated charge, respectively. The example of test conditions
used for this equation are shown in Table A.1.
k) The results of the environmental test of the bias temperatures of 23 °C and 100 °C are
shown in Table A.2.
Figure A.1 – Measurement setup of direct piezoelectric coefficient
Table A.1 – Example of test conditions for high temperature bias test
−5
Maximum strain: S
8,3 × 10
PZT thickness 3 µm
Si thickness: h 625 μm
s
width: W 2 mm
l
15 mm
l 10 mm
Displacement: u 5 μm
Vibration frequency 500 Hz
Table A.2 – High temperature bias test: 23 °C and 100 °C
Temperature: 23 °C Time (h) 0 1 10 24
d 2
5,4 3,5 2,7 2,4
|e | (C/m )
31,f
Temperature: 100 °C Time (h) 0 1 10 24
d 2
5,5 2,9 2 1,7
|e | (C/m )
31,f
– 16 – IEC 62047-37:2020 © IEC 2020
Bibliography
IEC 60068-2-14:2009, Environmental testing – Part 2-14: Tests – Test N: Change of
temperature
IEC 60068-2-58, Environmental testing – Part 2-58: Tests – Test Td: Test methods for
solderability, resistance to dissolution of metallization and to soldering heat of surface
mounting devices (SMD)
IEC 60384-1, Fixed capacitors for use in electronic equipment – Part 1: Generic specification

___________
– 18 – IEC 62047-37:2020 © IEC 2020
SOMMAIRE
AVANT-PROPOS . 19
INTRODUCTION . 21
1 Domaine d’application . 22
2 Références normatives . 22
3 Termes et définitions . 22
4 Procédure d’essai . 23
4.1 Généralités . 23
4.2 Mesures initiales . 23
4.3 Essais . 23
4.3.1 Configuration du DUT et conditions d’environnement . 23
4.3.2 Durée de l’essai . 23
4.3.3 Nombre d’essais et nombre de DUT . 24
4.4 Post-traitement . 24
4.5 Mesures finales. 24
5 Essais d’environnement et essais de tenue diélectrique . 24
5.1 Essais d’environnement . 24
5.1.1 Généralités . 24
5.1.2 Essai de polarisation à haute température . 25
5.1.3 Essai de polarisation à haute température et taux d’humidité élevé . 25
5.1.4 Stockage à haute température . 26
5.1.5 Stockage à basse température . 26
5.1.6 Stockage à haute température et taux d’humidité élevé . 26
5.1.7 Essai de chaleur de brasage . 27
5.1.8 Essai cyclique de températures . 29
5.2 Essai de tenue diélectrique . 30
Annexe A (informative) Consignation des résultats d’essai . 31
A.1 Généralités . 31
A.2 Essai de polarisation à haute température . 31
Bibliographie . 34

Figure 1 – Schéma de principe de la procédure d’essai . 23
Figure 2 – Profil de température pour un brasage par refusion sans plomb . 28
Figure 3 – Profil de température de l’essai cyclique de températures . 29
Figure 4 – Exemple de circuit d’essai de tenue diélectrique pour une tension continue . 30
Figure A.1 – Montage de mesure du coefficient piézoélectrique de l’effet direct . 32

Tableau 1 – Conditions d’essai définissables . 26
Tableau 2 – Conditions d’essai définissables . 27
Tableau 3 – Conditions de l’essai de chaleur de brasage . 27
Tableau 4 – Conditions du profil de température pour un brasage par refusion sans
plomb . 28
Tableau A.1 – Exemple de conditions d’essai pour l’essai de polarisation à haute
température . 33
Tableau A.2 – Essai de polarisation à haute température: 23 °C et 100 °C . 33

COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE
____________
DISPOSITIFS À SEMICONDUCTEURS –
DISPOSITIFS MICROÉLECTROMÉCANIQUES –

Partie 37: Méthodes d’essai d’environnement des couches minces
piézoélectriques MEMS pour les applications de type capteur

AVANT-PROPOS
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...