Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application

IEC 62047-37:2020 specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under mechanical stress and strain, and test conditions for appropriate quality assessment. Specifically, this document specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of direct piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e. piezoelectric thin films used as acoustic sensors, or as cantilever-type sensors.
This document does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 37: Méthodes d’essai d’environnement des couches minces piézoélectriques MEMS pour les applications de type capteur

L’IEC 62047-37:2020 spécifie les méthodes d’essai permettant d’apprécier la durabilité des matériaux des couches minces piézoélectriques MEMS soumis à la contrainte d’environnement de température et d’humidité, à la contrainte et à la déformation mécaniques, ainsi que les conditions d’essai définissant une évaluation appropriée de la qualité. Plus spécifiquement, le présent document spécifie les méthodes et conditions d’essai permettant de mesurer la durabilité d’un DUT dans différentes conditions de température et d’humidité, et sous différentes tensions appliquées. Il applique en outre les appréciations aux propriétés liées à l’effet direct de la piézoélectricité, pour des couches minces piézoélectriques formées principalement à base de substrats de silice, c’est-à-dire les couches minces piézoélectriques utilisées comme capteurs acoustiques, ou comme capteurs de vibrations.
Le présent document ne couvre pas les évaluations de fiabilité, telles que les méthodes permettant de prévoir la durée de vie d’une couche mince piézoélectrique en se basant sur la loi de Weibull.

General Information

Status
Published
Publication Date
27-Apr-2020
Current Stage
PPUB - Publication issued
Completion Date
28-Apr-2020
Ref Project

Buy Standard

Standard
IEC 62047-37:2020 - Semiconductor devices - Micro-electromechanical devices - Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor application
English and French language
34 pages
sale 15% off
Preview
sale 15% off
Preview

Standards Content (sample)

IEC 62047-37
Edition 1.0 2020-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor
application
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 37: Méthodes d’essai d’environnement des couches minces
piézoélectriques MEMS pour les applications de type capteur
IEC 62047-37:2020-04(en-fr)
---------------------- Page: 1 ----------------------
THIS PUBLICATION IS COPYRIGHT PROTECTED
Copyright © 2020 IEC, Geneva, Switzerland

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form

or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from

either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC

copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or

your local IEC member National Committee for further information.

Droits de reproduction réservés. Sauf indication contraire, aucune partie de cette publication ne peut être reproduite

ni utilisée sous quelque forme que ce soit et par aucun procédé, électronique ou mécanique, y compris la photocopie

et les microfilms, sans l'accord écrit de l'IEC ou du Comité national de l'IEC du pays du demandeur. Si vous avez des

questions sur le copyright de l'IEC ou si vous désirez obtenir des droits supplémentaires sur cette publication, utilisez

les coordonnées ci-après ou contactez le Comité national de l'IEC de votre pays de résidence.

IEC Central Office Tel.: +41 22 919 02 11
3, rue de Varembé info@iec.ch
CH-1211 Geneva 20 www.iec.ch
Switzerland
About the IEC

The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes

International Standards for all electrical, electronic and related technologies.
About IEC publications

The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the

latest edition, a corrigendum or an amendment might have been published.

IEC publications search - webstore.iec.ch/advsearchform Electropedia - www.electropedia.org

The advanced search enables to find IEC publications by a The world's leading online dictionary on electrotechnology,

variety of criteria (reference number, text, technical containing more than 22 000 terminological entries in English

committee,…). It also gives information on projects, replaced and French, with equivalent terms in 16 additional languages.

and withdrawn publications. Also known as the International Electrotechnical Vocabulary

(IEV) online.
IEC Just Published - webstore.iec.ch/justpublished

Stay up to date on all new IEC publications. Just Published IEC Glossary - std.iec.ch/glossary

details all new publications released. Available online and 67 000 electrotechnical terminology entries in English and

once a month by email. French extracted from the Terms and Definitions clause of

IEC publications issued since 2002. Some entries have been

IEC Customer Service Centre - webstore.iec.ch/csc collected from earlier publications of IEC TC 37, 77, 86 and

If you wish to give us your feedback on this publication or CISPR.
need further assistance, please contact the Customer Service
Centre: sales@iec.ch.
A propos de l'IEC

La Commission Electrotechnique Internationale (IEC) est la première organisation mondiale qui élabore et publie des

Normes internationales pour tout ce qui a trait à l'électricité, à l'électronique et aux technologies apparentées.

A propos des publications IEC

Le contenu technique des publications IEC est constamment revu. Veuillez vous assurer que vous possédez l’édition la

plus récente, un corrigendum ou amendement peut avoir été publié.
Recherche de publications IEC - Electropedia - www.electropedia.org

webstore.iec.ch/advsearchform Le premier dictionnaire d'électrotechnologie en ligne au

La recherche avancée permet de trouver des publications IEC monde, avec plus de 22 000 articles terminologiques en

en utilisant différents critères (numéro de référence, texte, anglais et en français, ainsi que les termes équivalents dans

comité d’études,…). Elle donne aussi des informations sur les 16 langues additionnelles. Egalement appelé Vocabulaire

projets et les publications remplacées ou retirées. Electrotechnique International (IEV) en ligne.

IEC Just Published - webstore.iec.ch/justpublished Glossaire IEC - std.iec.ch/glossary

Restez informé sur les nouvelles publications IEC. Just 67 000 entrées terminologiques électrotechniques, en anglais

Published détaille les nouvelles publications parues. et en français, extraites des articles Termes et Définitions des

Disponible en ligne et une fois par mois par email. publications IEC parues depuis 2002. Plus certaines entrées

antérieures extraites des publications des CE 37, 77, 86 et
Service Clients - webstore.iec.ch/csc CISPR de l'IEC.
Si vous désirez nous donner des commentaires sur cette
publication ou si vous avez des questions contactez-nous:
sales@iec.ch.
---------------------- Page: 2 ----------------------
IEC 62047-37
Edition 1.0 2020-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 37: Environmental test methods of MEMS piezoelectric thin films for sensor
application
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 37: Méthodes d’essai d’environnement des couches minces
piézoélectriques MEMS pour les applications de type capteur
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99; 31.140 ISBN 978-2-8322-8231-1

Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
---------------------- Page: 3 ----------------------
– 2 – IEC 62047-37:2020 © IEC 2020
CONTENTS

FOREWORD ........................................................................................................................... 3

INTRODUCTION ..................................................................................................................... 5

1 Scope .............................................................................................................................. 6

2 Normative references ...................................................................................................... 6

3 Terms and definitions ...................................................................................................... 6

4 Testing procedure ............................................................................................................ 6

4.1 General ................................................................................................................... 6

4.2 Initial measurements ............................................................................................... 7

4.3 Tests ...................................................................................................................... 7

4.3.1 DUT setup and environmental conditions ......................................................... 7

4.3.2 Test duration ................................................................................................... 7

4.3.3 Number of tests and number of DUTs .............................................................. 7

4.4 Post-treatment ........................................................................................................ 8

4.5 Final measurements ................................................................................................ 8

5 Environmental and dielectric withstand testing ................................................................. 8

5.1 Environmental testing ............................................................................................. 8

5.1.1 General ........................................................................................................... 8

5.1.2 High-temperature bias test ............................................................................... 9

5.1.3 High-temperature and high-humidity bias test .................................................. 9

5.1.4 High-temperature storage ................................................................................ 9

5.1.5 Low-temperature storage ............................................................................... 10

5.1.6 High-temperature and high-humidity storage .................................................. 10

5.1.7 Soldering heat test ........................................................................................ 10

5.1.8 Temperature cycling test ............................................................................... 11

5.2 Dielectric withstand testing ................................................................................... 12

Annex A (informative) Report of test results ......................................................................... 14

A.1 General ................................................................................................................. 14

A.2 High-temperature bias test .................................................................................... 14

Bibliography .......................................................................................................................... 16

Figure 1 – Flow of the testing procedure ................................................................................. 7

Figure 2 – Temperature profile for reflow soldering with lead-free solder .............................. 11

Figure 3 – Temperature profile of the temperature cycling test .............................................. 12

Figure 4 – Example of a dielectric withstand test circuit for DC voltage ................................. 13

Figure A.1 – Measurement setup of direct piezoelectric coefficient ....................................... 15

Table 1 – Selectable test conditions ........................................................................................ 9

Table 2 – Selectable test conditions ...................................................................................... 10

Table 3 – Soldering heat test condition ................................................................................. 10

Table 4 – Conditions of temperature profile for reflow soldering with lead-free solder ........... 11

Table A.1 – Example of test conditions for high temperature bias test ................................... 15

Table A.2 – High temperature bias test: 23 °C and 100 °C .................................................... 15

---------------------- Page: 4 ----------------------
IEC 62047-37:2020 © IEC 2020 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 37: Environmental test methods of MEMS
piezoelectric thin films for sensor application
FOREWORD

1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising

all national electrotechnical committees (IEC National Committees). The object of IEC is to promote

international co-operation on all questions concerning standardization in the electrical and electronic fields. To

this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,

Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC

Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested

in the subject dealt with may participate in this preparatory work. International, governmental and non-

governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely

with the International Organization for Standardization (ISO) in accordance with conditions determined by

agreement between the two organizations.

2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international

consensus of opinion on the relevant subjects since each technical committee has representation from all

interested IEC National Committees.

3) IEC Publications have the form of recommendations for international use and are accepted by IEC National

Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC

Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any

misinterpretation by any end user.

4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications

transparently to the maximum extent possible in their national and regional publications. Any divergence

between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in

the latter.

5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity

assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any

services carried out by independent certification bodies.

6) All users should ensure that they have the latest edition of this publication.

7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and

members of its technical committees and IEC National Committees for any personal injury, property damage or

other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and

expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC

Publications.

8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is

indispensable for the correct application of this publication.

9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of

patent rights. IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 62047-37 has been prepared by subcommittee 47F: Micro-

electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/355/FDIS 47F/357/RVD

Full information on the voting for the approval of this International Standard can be found in

the report on voting indicated in the above table.

This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

---------------------- Page: 5 ----------------------
– 4 – IEC 62047-37:2020 © IEC 2020

A list of all parts in the IEC 62047 series, published under the general title Semiconductor

devices – Micro-electromechanical devices, can be found on the IEC website.

The committee has decided that the contents of this document will remain unchanged until the

stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to

the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates

that it contains colours which are considered to be useful for the correct

understanding of its contents. Users should therefore print this document using a

colour printer.
---------------------- Page: 6 ----------------------
IEC 62047-37:2020 © IEC 2020 – 5 –
INTRODUCTION

Piezoelectric MEMS technology belongs to an interdisciplinary field founded on a wide range

of element technologies including piezoelectric thin film materials, thin film deposition and

microfabrication processes, device design, and system formulation. Along with the increased

sophistication of MEMS functionality, research on MEMS applications for piezoelectric thin

films, such as Pb(Zr,Ti)O (PZT) or AlN, has become increasingly popular in recent years.

MEMS piezoelectric thin films have the capability of configuring simple compact devices that

have a lower power consumption, higher sensitivity, and quicker response than conventional

bulk-type, electrostatic, or electromagnetic thin films. However, their device performance is

greatly affected by the properties of the thin film materials.

Several test methods for thin film materials have been established to date. Among these, the

overriding property that determines device performance is the material’s piezoelectric

property. Standardization of IEC 62047-30 (Semiconductor devices – Micro-electromechanical

devices – Part 30: Measurement methods of electro-mechanical conversion characteristics of

MEMS piezoelectric thin film) has been promoted for the purpose of precisely measuring and

evaluating MEMS piezoelectric thin films using simply structured test pieces and inexpensive

equipment.

In order to realize a viable MEMS piezoelectric thin film, it is essential to gain a clear

understanding of how its piezoelectric properties change as a result of the environmental

stress of temperature and humidity, and degradation in the piezoelectric material over time at

its surfaces and interfaces.
The following summarizes the features of this standard.

• The degree of degradation in a device under test (DUT) is evaluated by measuring the

piezoelectric properties of the DUT before and after applying the environmental stress of

temperature and humidity using the measurement methods in IEC 62047-30.

• Test conditions for moist heat and dielectric withstand tests are derived from existing

standards for semiconductor devices and fixed capacitors of ceramic dielectric.
---------------------- Page: 7 ----------------------
– 6 – IEC 62047-37:2020 © IEC 2020
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 37: Environmental test methods of MEMS
piezoelectric thin films for sensor application
1 Scope

This part of IEC 62047 specifies test methods for evaluating the durability of MEMS

piezoelectric thin film materials under the environmental stress of temperature and humidity

and under mechanical stress and strain, and test conditions for appropriate quality

assessment. Specifically, this document specifies test methods and test conditions for

measuring the durability of a DUT under temperature and humidity conditions and applied

voltages. It further applies to evaluations of direct piezoelectric properties in piezoelectric thin

films formed primarily on silicon substrates, i.e. piezoelectric thin films used as acoustic

sensors, or as cantilever-type sensors.

This document does not cover reliability assessments, such as methods of predicting the

lifetime of a piezoelectric thin film based on a Weibull distribution.
2 Normative references

The following documents are referred to in the text in such a way that some or all of their

content constitutes requirements of this document. For dated references, only the edition

cited applies. For undated references, the latest edition of the referenced document (including

any amendments) applies.
IEC 62047-30, Semiconductor devices – Micro-electromechanical devices – Part 30:
Measurement methods of electro-mechanical conversion characteristics of MEMS
piezoelectric thin film
3 Terms and definitions
No terms and definitions are listed in this document.

ISO and IEC maintain terminological databases for use in standardization at the following

addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Testing procedure
4.1 General

The degree of degradation in a device under test (DUT) is evaluated by measuring the

piezoelectric properties of the DUT before and after applying the environmental stress of

temperature and humidity. Figure 1 shows the general flow of the testing procedure.

---------------------- Page: 8 ----------------------
IEC 62047-37:2020 © IEC 2020 – 7 –
Figure 1 – Flow of the testing procedure
4.2 Initial measurements

The methods of measurement used in the environmental tests shall conform to the methods

described in IEC 62047-30. The ambient conditions for measurements shall include an

ambient temperature of 25 °C ± 3 °C, a relative humidity of 45 % to 75 %, and an atmospheric

pressure of 86 kPa to 106 kPa.
4.3 Tests
4.3.1 DUT setup and environmental conditions

For tests requiring continuous operation of the DUT, the DUT is placed in a test bed that can

be adjusted to the prescribed temperature and humidity to conditions. The test conditions are

monitored to verify that no abnormalities occur when the chamber environment reaches the

prescribed conditions. For tests that do not require continuous operations of the DUT, the

DUT may be placed in the test bed and the test bed may be deposited in the chamber, but the

test bed need not be put in the chamber. When depositing and removing the DUT and test

bed for either test, the operator shall ensure that:
• water does not drip onto the DUT;
• the DUT is not directly immersed in water.
4.3.2 Test duration
Test duration is described in 5.1.1 to 5.1.7.
4.3.3 Number of tests and number of DUTs

Specifications for the number of tests and the number of DUTs shall take the failure

mechanism, failure distribution, and other factors anticipated in each test into account. When

intermediate measurements are required, such measurements may be performed in
accordance with the following timetable:
• 24 h (+8 h, −0 h);
• 48 h (+8 h, −0 h);
• 96 h (+24 h, −0 h);
• 168 h (+48 h, −0 h);
---------------------- Page: 9 ----------------------
– 8 – IEC 62047-37:2020 © IEC 2020
• 480 h (+72 h, −0 h).

Here, the time spent removing the DUT and conducting the intermediate measurements shall

be omitted from the test duration.
4.4 Post-treatment

After completion of the tests, first the application of mechanical stress and strain, or vibration,

is halted, and then the DUT is removed from the chamber and returned to standard conditions.

However, this shall not apply to cases in which the DUT clearly recovers from its degraded

state after the application of mechanical stress and strain, or vibration, is halted at the testing

temperature because a correct result is not possible.
4.5 Final measurements

The methods of measurement used in moist heat tests shall conform to the methods set forth

in IEC 62047-30. The degraded state of a DUT is evaluated by comparing the final

measurements to the initial measurements. The environmental conditions for measurements

shall include:
• ambient temperature: 25 °C ± 3 °C;
• relative humidity: 45 % to 75 %;
• atmospheric pressure: 86 kPa to 106 kPa.

As a general rule, final measurements shall be conducted within 48 h from the completion of

tests after verifying that the surface of the DUT is dry. When conducting intermediate

measurements prior to the final measurements, the DUT shall be deposited back into the

testing chamber within 96 h after being removed for measurements. Final measurements are

preferably completed within 96 h after halting voltage application to the DUT.
5 Environmental and dielectric withstand testing
5.1 Environmental testing
5.1.1 General
Equipment used in these experiments includes:

• a chamber or a room capable of maintaining predetermined test temperature and humidity

and allowable temperature and humidity;

• a vibrator or an external actuator for generating a predetermined deflection of the

unimorph beam;

• a mechanical stress and strain, or vibration, application equipment having sufficient

resistance for withstanding the test temperatures and humidity.

The chamber shall be capable of maintaining its entire interior at the set temperature ±2 °C

and the set humidity ±5 % during the test. The applied mechanical stress and strain, and the

operating method shall be established with consideration for the limits of the DUT. The

application circuit shall be considered to account for load conditions and other factors in order

that the operating state of the DUT be suitably maintained.

NOTE 1 The degree of degradation in a device under test (DUT) is evaluated by measuring the piezoelectric

properties of the DUT before and after applying the environmental stress of temperature and humidity.

NOTE 2 The degree of degradation in a DUT is evaluated using the measurement methods in IEC 62047-30.

NOTE 3 A test circuit for testing a plurality of DUT simultaneously is designed so that failure of one DUT during a

test does not affect the other DUT.
---------------------- Page: 10 ----------------------
IEC 62047-37:2020 © IEC 2020 – 9 –
5.1.2 High-temperature bias test

The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to operate at

a high temperature. Mechanical stress and strain (beam deflection) is applied to the

piezoelectric film under a high temperature to evaluate the effects of these conditions over a

long duration. The conditions applied to the DUT, including the vibration mode (resonant

mode or non-resonant mode), input waveform, the frequency, and the like shall be determined

based on the expected application of the sensor. The following test conditions shall be

applied:
• test temperature: 85 °C or higher;
• test duration: 96 h or longer.
The example of this test result is provided in Annex A.
NOTE 1 Sample test temperatures can include 85 °C, 105 °C and 125 °C.
NOTE 2 Sample test durations can include 96 h, 480 h and 960 h.
5.1.3 High-temperature and high-humidity bias test

The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to operate

under high temperature and high humidity. Mechanical stress and strain (beam bending) is

applied to the piezoelectric thin film under high temperature and humidity and the effects of

these conditions are assessed over a long duration. The humidity test determines whether

electronic products have sufficient electrical and mechanical properties to withstand heavy

conditions with high relative humidity, regardless of whether condensation is present. The

humidity test may also be used to inspect the resistance of the DUT to various corrosive

actions. Based on the expected application of the sensor, the measurement parameters shall

be determined as follows:
• resonant mode or non-resonant mode;
• input waveform;
• frequency.
Table 1 shows the selectable test conditions.
Table 1 – Selectable test conditions
Condition Temperature Humidity
(°C) (%)
A 40 ± 2 90 ± 5
B 60 ± 2 90 ± 5
C 85 ± 2 85 ± 5
The test parameters shall be determined as follows:

• test strain: maximum strain of piezoelectric thin films applied by bending beam (operation

max.);
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.4 High-temperature storage

The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand

storage at a high temperature. The piezoelectric thin film is kept under a high temperature for

---------------------- Page: 11 ----------------------
– 10 – IEC 62047-37:2020 © IEC 2020

a long duration, and the effects of these conditions are evaluated. The following test

conditions shall be applied:
• test temperature: 85 °C or higher;
• test duration: 96 h or longer.
NOTE 1 Sample test temperatures include 85 °C, 105 °C and 125 °C.
NOTE 2 Sample test durations include 96 h, 480 h and 960 h.
5.1.5 Low-temperature storage

The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand

storage at a low temperature. The piezoelectric thin film is kept under a low temperature for a

long duration, and the effects of these conditions are evaluated. The following test conditions

shall be applied:
• test temperature: −20 °C or lower;
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.6 High-temperature and high-humidity storage

The objective of this test is to evaluate the ability of MEMS piezoelectric thin film to withstand

storage under a high temperature and high humidity. The piezoelectric thin film is maintained

under high temperature and high humidity conditions for a long duration, and the effects of

these conditions are evaluated. Table 2 shows the selectable test conditions.
Table 2 – Selectable test conditions
Condition Temperature Humidity
(°C) (%)
A 40 ± 2 90 ± 5
B 60 ± 2 90 ± 5
C 85 ± 2 85 ± 5
The test parameters shall be determined as follows:
• test duration: 96 h or longer.
NOTE Sample test durations include 96 h, 480 h and 960 h.
5.1.7 Soldering heat test

The objective of this test is to evaluate the resistance of MEMS piezoelectric thin film to heat

generated during soldering. The temperature and time required for replicating thermal

conditions expected in reflow soldering are specified in Table 3.
Table 3 – Soldering heat test condition
Specified temperature Hold time
(°C) (s)
Test c
...

Questions, Comments and Discussion

Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.