ASTM F398-92(2002)
(Test Method)Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum (Withdrawn 2003)
Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum (Withdrawn 2003)
SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers determination of the wavenumber of the plasma resonance minimum in the infrared reflectance of a doped semiconductor specimen, from which the majority carrier concentration can be obtained.
1.2 This test method of determination of the wavenumber minimum is nondestructive and contactless. It is applicable to n- and p-type silicon, n- and p-type gallium arsenide, and n-type germanium.
1.3 This test method gives a relative measurement in that the relation between the wavenumber of the plasma resonance minimum and the majority carrier concentration is empirical. Such relations have been established for the several cases summarized in Annex A1. These relations are based upon determinations of the plasma resonance minimum by the procedure of this method and determinations of the Hall coefficient according to Test Methods F76 (Section 2) or resistivity according to Test Methods F43 or Test Method F84 (Section 2) as appropriate.
1.4 These relations have been established over a majority carrier concentration range from 1.5 X 10 to 1.5 X 10 cm -3 for n-type silicon, from 3 X 10 to 5 X 10 for p-type silicon, from 3 X 10 to 7 X 10 for n-type germanium, from 1.5 X 10 to 1 X 10 for n-type gallium arsenide, and from 2.6 X 10 to 1.3 X 10 cm -3 for p-type gallium arsenide.
1.5 These relations can be extended or developed for other materials by measuring the wavelength of the plasma resonance minimum according to this procedure on specimens whose majority carrier concentration has been determined by other means.
1.6 This test method is applicable to both bulk and diffused material. However, since there is some controversy over the effects of variations of junction depth on the measurement, it should be applied to surface concentration measurements on shallow (1 μm or less) diffusions only on a relative basis unless there is experimental corroboration of the results under the conditions of interest.
1.7 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
General Information
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Standards Content (Sample)
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Contact ASTM International (www.astm.org) for the latest information.
Designation: F 398 – 92 (Reapproved 2002)
Standard Test Method for
Majority Carrier Concentration in Semiconductors by
Measurement of Wavenumber or Wavelength of the Plasma
1
Resonance Minimum
This standard is issued under the fixed designation F 398; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
As originally published, this test method was written for infrared instruments with output in units
of wavelength. Calibration data, as included, were based on infrared measurements in units of
wavelength and on a combination of concentration scale methods including Hall effect, neutron
activation analysis, and four-probe resistivity. These latter measurements were converted, using the
empirical data of Irvin, from resistivity to “impurity concentration.” The result of this procedure is
calibration data that is a mixture of carrier concentration and impurity concentration values. While the
differences between them is large only at very high concentrations, there are values in the original
calibration plots for silicon (Fig. A1.1 and Fig. A1.2) that are above currently accepted solid-solubility
limit values.
Common practice current infrared spectrophotometers is to give output in units of wavenumbers
−1
(cm ). In order to relate this test method and its original calibration to current infrared units without
introducing numerical error (the calibration relation is not analytically invertible to wavenumbers), the
direct substitution of 10 000/wavenumber for wavelength is given in the analysis equation and in the
tables of coefficients.
This test method is not believed to have wide current use in the semiconductor industry. However,
because this test method may be useful for some applications and because the calibration data
contained herein is believed to be available nowhere else in the archival literature, this test method is
being retained as a standard.
1. Scope determinations of the plasma resonance minimum by the
procedure of this method and determinations of the Hall
1.1 This test method covers determination of the wavenum-
coefficient according to Test Methods F 76 (Section 2) or
ber of the plasma resonance minimum in the infrared reflec-
resistivity according to Test Methods F 43 or Test Method F 84
tance of a doped semiconductor specimen, from which the
(Section 2) as appropriate.
majority carrier concentration can be obtained.
1.4 These relations have been established over a majority
1.2 This test method of determination of the wavenumber
18 21
carrier concentration range from 1.5 3 10 to 1.5 3 10
minimum is nondestructive and contactless. It is applicable to
−3 18 20
cm for n-type silicon, from 3 3 10 to 5 3 10 for p-type
n- and p-type silicon, n- and p-type gallium arsenide, and
18 19
silicon, from 3 3 10 to 7 3 10 for n-type germanium, from
n-type germanium.
17 19
1.5 3 10 to 1 3 10 for n-type gallium arsenide, and from
1.3 This test method gives a relative measurement in that
18 20 −3
2.6 3 10 to 1.3 3 10 cm for p-type gallium arsenide.
the relation between the wavenumber of the plasma resonance
1.5 These relations can be extended or developed for other
minimum and the majority carrier concentration is empirical.
materials by measuring the wavelength of the plasma reso-
Such relations have been established for the several cases
nance minimum according to this procedure on specimens
summarized in Annex A1. These relations are based upon
whose majority carrier concentration has been determined by
other means.
1
This test method is under the jurisdiction of ASTM Committee F01 on 1.6 This test method is applicable to both bulk and diffused
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon
material. However, since there is some controversy over the
Materials and Process Control.
effects of variations of junction depth on the measurement, it
Current edition approved May 15, 1992. Published July 1992. Originally
e1
should be applied to surface concentration measurements on
published as F 398 – 74 T. Last previous edition F 398 – 87 .
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 398 – 92 (2002)
shallow (1 μm or less) diffusions only on a relative basis unless 5. Significance and Use
there is experimental corroboration of the results under the
5.1 The measurem
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