Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications

ABSTRACT
This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.
SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

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14-Jun-2008
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ASTM F1709-97(2008) - Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications
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NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:F1709 −97(Reapproved 2008)
Standard Specification for
High Purity Titanium Sputtering Targets for Electronic Thin
Film Applications
This standard is issued under the fixed designation F1709; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 4.2 Purity grade and total metallic impurity levels are based
upon the suite of elements listed in Table 2.
1.1 This specification covers pure titanium sputtering tar-
gets used as a raw material in fabricating semiconductor
5. Ordering Information
electronic devices.
5.1 Orders for pure titanium sputtering targets shall include
1.2 This standard sets purity grade levels, physical
the following:
attributes, analytical methods, and packaging.
5.1.1 Grade (see 4.1),
1.2.1 The grade designation is a measure of total metallic
5.1.2 Special requirements concerning impurities, if re-
impurity content. The grade designation does not necessarily
quired (see 6.1, 6.2, 6.3, 6.4),
indicate suitability for a particular application because factors
5.1.3 Grain size, if required (Section 7),
other than total metallic impurity may influence performance.
5.1.4 Configuration (Section 8),
2. Referenced Documents
5.1.5 Certification required (Section 12), and
2.1 ASTM Standards: 5.1.6 Whether or not a sample representative of the finished
E112 Test Methods for Determining Average Grain Size product is required to be provided by the supplier to the
purchaser.
3. Terminology
6. Impurities
3.1 Definitions of Terms Specific to This Standard:
3.1.1 finished product, n— for the purposes of this standard,
6.1 The minimum suite of metallic impurity elements to be
a “finished product” is a manufactured sputtering target, ready
analyzed is defined in Table 2. Acceptable analysis methods
for use.
and detection limits are specified in Section 11. Elements not
3.1.2 material lot, n—for the purpose of this standard,a
detected will be counted and reported as present at the
“lot” is material melted into one ingot, and processed as one minimum detection limit (“mdl”).Additional elements may be
continuous batch in subsequent thermal-mechanical treat-
analyzed and reported as agreed upon between the purchaser
ments.
and the supplier, but these shall not be counted in defining the
grade designation.
4. Classification
6.2 Cesium, chlorine, phosphorus, and tantalum present
4.1 Grades of titanium sputtering targets are defined in
particular analysis problems. The limits, analysis method, and
Table 1, based upon total metallic impurity content of the
mdl may be as agreed upon between the purchaser and the
elements listed in Table 2. Impurity contents are reported in
supplier.
parts per million by weight (wt ppm). Higher purity grades, for
6.3 Nonmetallic elements which shall be analyzed and
example “5N5” and“ 6N”, may be provided, as agreed upon
reported are carbon, hydrogen, nitrogen, oxygen, and sulfur.
between the purchaser and the supplier.
Maximum limits for nonmetallic impurities shall be as agreed
upon between the purchaser and the supplier.
This specification is under the jurisdiction of ASTM Committee F01 on
6.4 Acceptable limits and analytical techniques for particu-
Electronics and is the direct responsibility of Subcommittee F01.17 on Sputter
Metallization.
lar elements in critical applications may be agreed upon
Current edition approved June 15, 2008. Published July 2008. Originally
between the purchaser and the supplier.
approved in 1996. Last previous edition approved in 2002 as F1709 – 97(2002).
DOI: 10.1520/F1709-97R08.
For referenced ASTM standards, visit the ASTM website, www.astm.org, or 7. Grain Size
contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
7.1 The average and the maximum grain size shall be as
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website. agreed upon between the purchaser and the supplier.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
F1709−97 (2008)
TABLE 1 Titanium Sputtering Target Grades
sample specimens that are representative of the production lot.
Grade Purity, % Maximum Total Metallic Impurity These data shall be averaged to establish conformance with the
Content, wt ppm
gradedesignation(4.1),othermetallicimpuritylimits(6.1,6.2,
4N 99.99 100
6.4), and the agreed upon limits for nonmetallic content (6.3).
4N5 99.995 50
5N 99.999 10
11. Analytical Methods
11.1 Analysis for impurities listed in Section 6 and Table 2
TABLE 2 Suite of Metallic Elements to be Analyzed and Reported
shall be performed as follows:
aluminum iron silicon vanadium
11.1.1 Trace Metallic Impurities—By glow discharge mass
chromium lead silver zinc
spectrometer(GDMS)withanominalmdl≤0.05weightppm.
cobalt lithium potassium sodium
zirconium copper magnesium thorium
NOTE 1—The mdl for some metallic species by GDMS is >0.05 weight
boron manganese tin molybdenum
ppm, as limited by interferences.
tungsten nickel uranium
11.1.2 Carbon, Oxygen, Sulfur—By fusion and gas
extraction/infrared spectroscopy with an mdl of ≤10
...

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