F01.17 - Sputter Metallization

SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates, used in making flat panel information displays. It is assumed that the thickness of the conductive thin film is much thinner than the spacing of the contact probes used to measure the sheet resistance.
1.2 This standard is intended to be used with Test Method F 390.
1.3 Sheet resistivity in the range 0.5 to 5000 ohms per square may be measured by this practice. The sheet resistance is assumed uniform in the area being probed.
1.4 This practice is applicable to flat surfaces only.
1.5 Probe pin spacings of 1.5 mm to 5.0 mm, inclusive (0.059 to 0.197 in inclusive) are covered by this practice.
1.6 The method in this practice is potentially destructive to the thin film in the immediate area in which the measurement is made. Areas tested should thus be characteristic of the functional part of the substrate, but should be remote from critical active regions. The method is suitable for characterizing dummy test substrates processed at the same time as substrates of interest.
1.7 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.
1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon by the parties concerned.  
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure aluminum. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade aluminum materials.
SCOPE
1.1 This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 The aluminum matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, silicon or copper, greater than 1000 weight ppm in concentration.
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to affect the reliability of high purity aluminum analyses.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure titanium. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade titanium materials.
SCOPE
1.1 This test method covers the determination of concentrations of trace metallic impurities in high purity titanium.
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 The titanium matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, aluminum or iron, greater than 1000 weight ppm in concentration.
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to effect the reliability of high purity titanium analyses.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
Resistivity is a primary quantity for characterization and specification of coated glass plates used for flat panel displays. Sheet resistance is also a primary quantity for characterization, specification, and monitoring of thin film fabrication processes.
This practice requires no specimen preparation.
The eddy current method is non-destructive to the thin film being measured. Special geometrical correction factors, needed for some four-point probe electrical resistivity measurements, are not required to derive the true sheet resistance so long as the transducers have a continuous layer of conductive thin film between them.
Test Methods F 673 refers to a testing arrangement in which the transducers and specimen (a semiconductor grade silicon wafer) are rigidly positioned. Similar apparatus is commercially available for testing large glass or plastic substrates, not envisioned in the scope of Test Methods F 673. A hand held probe can also be used, depending on throat depth required.
For use as a referee method, the probe and measuring apparatus must first be checked and qualified before use by the procedures of Test Methods F 673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5), then this practice is used.
For use as a routine quality assurance method, this practice may be employed with periodic qualifications of probe and measuring apparatus by the procedures of Test Methods F 673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5). The parties to the test must agree upon adequate qualification intervals for the test apparatus.
SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates (glass or plastic), used in making flat panel information displays.
1.2 This practice is intended to be used with Test Methods F 673. This practice pertains to a “manual” measurement procedure in which an operator positions the measuring head on the test specimen and then personally activates the test apparatus. The resulting test data may be tabulated by the operator, or, alternatively, sent to a computer-based data logging system. Both Methods I and II of Test Methods F 673 (paragraphs 3.1 through 3.3.3 of Test Methods F 673) are applicable to this practice.
1.3 Sheet resistivity in the range 0.020 to 3000 Ω per square (sheet conductance in the range 3 by 10–4  to 50 mhos per square) may be measured by this practice. The sheet resistance is assumed to be uniform in the area being probed.
Note 1—Typical manual test units, as described in this practice, measure and report in the units “mhos per square”; this is the inverse of “ohms per square.”
1.4 This practice is applicable to flat surfaces only.
1.5 This practice is non-destructive. It may be used on production panels to help assure production uniformity.
1.6 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ABSTRACT
This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.
SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in aluminum-copper, aluminum-silicon, and aluminum-copper-silicon alloys. The objective is to improve laboratory-to-laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 wt. ppm. With special precautions, detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade aluminum-copper, aluminum-silicon and aluminum-copper-silicon materials.
SCOPE
1.1 This test method determines the concentrations of trace metallic impurities in high purity (99.99 wt. % pure, or purer, with respect to metallic trace impurities) aluminum-copper, aluminum-silicon and aluminum-copper-silicon alloys with major alloy constituents as follows:
  aluminumGreater than 95.0 %  copperLess or equal than 5.0 %  siliconLess or equal than 5.0 %
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of detection limits, etc.) known by the responsible technical committee to effect the reliability of high purity aluminum analyses.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ABSTRACT
This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials. This standard sets purity grade levels, analytical methods and impurity content reporting method and format. The grade designation is a measure of total metallic impurity content. It does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance. Analysis for trace metallic impurities and gases shall be performed on samples that represent the finished sputtering target. Carbon, oxygen, and sulfur shall be analysed by fusion and gas extraction/infrared spectroscopy. Nitrogen and hydrogen shall be analysed by fusion and gas extraction.
SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

SIGNIFICANCE AND USE
It is standard practice to use magnetron cathode sputter deposition sources in manufacturing thin film magnetic data storage media. But a ferromagnetic sputtering target tends to shunt a sputtering cathode’ magnetic field, thus reducing the efficiency of the sputtering process.
Makers of sputtering targets have developed various means of controlling alloy microstructure to minimize the undesirable cathode shunting effect. Because of their differing manufacturing methods, however, the targets of one supplier may have magnetic properties significantly better or worse than those of another, even when the alloy compositions are the same.  
This test method permits comparing the magnetic shunting power of magnetic targets under a standard test condition. The results are useful to sputtering target suppliers and buyers in predicting target performance, in specifying target quality, and in qualifying incoming target shipments. This test may also be useful in quantifying target improvement efforts.
Manufacturing process steps that lower a target material’magnetic permeability tend to increase the PTF, and vice versa. It would in principle be possible to predict the PTF by accumulating sufficient permeability data, and knowing the target thickness and the field intensity of the magnetic assembly used for magnetron sputtering.
SCOPE
1.1 This test method covers measuring the dc magnetic field transmitted through a ferromagnetic sputtering target ("pass through flux" or "PTF"). In this test method the source magnetic field is in the test target's circumferential direction.
1.2 Planar disk-shaped targets in the diameter range 5 to 8 in. inclusive (125 to 205 mm inclusive) and of thickness 0.1 to 0.5 in. inclusive (2.5 to 13 mm) may be characterized by this procedure.
1.3 This test method is also applicable to targets having an open center, for example, to targets 5-in. outside diameter by 2.5-in. inside diameter by 0.25-in. thick (127-mm outside diameter by 63.5-mm inside diameter by 6.35-mm thick).
1.4 Targets of various diameters and thicknesses are accommodated by suitable fixturing to align the piece under test with the source magnet mounted in the test fixture. Tooling, covering several popular target designs is specified in this procedure. Additional target configurations may be tested by providing special tooling. When special fixturing is used all parties concerned with the testing must agree to the test setup.
1.5 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This test method covers the concentrations of trace metallic impurities in high purity (99.95 wt. % pure, or purer, with respect to metallic trace impurities) electronic grade copper.
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of detection limits, and the like) known by the responsible technical committee to effect the reliability of high purity copper analyses.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in aluminum-copper, aluminum-silicon, and aluminum-copper-silicon alloys. The objective is to improve laboratory-to-laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 wt. ppm. With special precautions, detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade aluminum-copper, aluminum-silicon and aluminum-copper-silicon materials.
SCOPE
1.1 This test method determines the concentrations of trace metallic impurities in high purity (99.99 wt. % pure, or purer, with respect to metallic trace impurities) aluminum-copper, aluminum-silicon and aluminum-copper-silicon alloys with major alloy constituents as follows:aluminumGreater than 95.0 %copperLess or equal than 5.0 %siliconLess or equal than 5.0 %
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of detection limits, etc.) known by the responsible technical committee to effect the reliability of high purity aluminum analyses.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
Resistivity is a primary quantity for characterization and specification of coated glass plates used for flat panel displays. Sheet resistance is also a primary quantity for characterization, specification, and monitoring of thin film fabrication processes.
This practice requires no specimen preparation.
The eddy current method is non-destructive to the thin film being measured. Special geometrical correction factors, needed for some four-point probe electrical resistivity measurements, are not required to derive the true sheet resistance so long as the transducers have a continuous layer of conductive thin film between them.
Test Methods F 673 refers to a testing arrangement in which the transducers and specimen (a semiconductor grade silicon wafer) are rigidly positioned. Similar apparatus is commercially available for testing large glass or plastic substrates, not envisioned in the scope of Test Methods F 673. A hand held probe can also be used, depending on throat depth required.
For use as a referee method, the probe and measuring apparatus must first be checked and qualified before use by the procedures of Test Methods F 673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5), then this practice is used.
For use as a routine quality assurance method, this practice may be employed with periodic qualifications of probe and measuring apparatus by the procedures of Test Methods F 673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5). The parties to the test must agree upon adequate qualification intervals for the test apparatus.
SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates (glass or plastic), used in making flat panel information displays.
1.2 This practice is intended to be used with Test Methods F 673. This practice pertains to a "manual" measurement procedure in which an operator positions the measuring head on the test specimen and then personally activates the test apparatus. The resulting test data may be tabulated by the operator, or, alternatively, sent to a computer-based data logging system. Both Methods I and II of Test Methods F 673 (paragraphs 3.1 through 3.3.3 of Test Methods F 673) are applicable to this practice.
1.3 Sheet resistivity in the range 0.020 to 3000 per square (sheet conductance in the range 3 by 10-4  to 50 mhos per square) may be measured by this practice. The sheet resistance is assumed to be uniform in the area being probed.
Note 1—Typical manual test units, as described in this practice, measure and report in the units "mhos per square"; this is the inverse of "ohms per square."
1.4 This practice is applicable to flat surfaces only.
1.5 This practice is non-destructive. It may be used on production panels to help assure production uniformity.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure titanium. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade titanium materials.
SCOPE
1.1 This test method covers the determination of concentrations of trace metallic impurities in high purity titanium.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The titanium matrix must be 99.9 weight percent (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, aluminum or iron, greater than 1000 weight ppm in concentration.  
1.4 this test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to effect the reliability of high purity titanium analyses.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon by the parties concerned.  
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure aluminum. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade aluminum materials.
SCOPE
1.1 This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The aluminum matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, silicon or copper, greater than 1000 weight ppm in concentration.  
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to affect the reliability of high purity aluminum analyses.

SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates, used in making flat panel information displays. It is assumed that the thickness of the conductive thin film is much thinner than the spacing of the contact probes used to measure the sheet resistance.
1.2 This standard is intended to be used with Test Method F 390.
1.3 Sheet resistivity in the range 0.5 to 5000 ohms per square may be measured by this practice. The sheet resistance is assumed uniform in the area being probed.
1.4 This practice is applicable to flat surfaces only.
1.5 Probe pin spacings of 1.5 mm to 5.0 mm, inclusive (0.059 to 0.197 in inclusive) are covered by this practice.
1.6 The method in this practice is potentially destructive to the thin film in the immediate area in which the measurement is made. Areas tested should thus be characteristic of the functional part of the substrate, but should be remote from critical active regions. The method is suitable for characterizing dummy test substrates processed at the same time as substrates of interest.
1.7 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.
1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

SCOPE
1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.
1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.

SCOPE
1.1 This specification covers measuring the DC magnetic field transmitted through a ferromagnetic sputtering target ("pass through flux" or "PTF").  
1.2 Planar disk-shaped targets in the diameter range 5 to 8 in. inclusive (125 to 205 mm inclusive) and of thickness 0.1 to 0.5 in. inclusive (2.5 to 13 mm) may be characterized by this procedure.  
1.3 This test method is also applicable to targets having an open center, for example, to targets 5-in. outside diameter by 2.5-in. inside diameter bu 0.25-in. thick (127-mm outside diameter by 63.5-mm inside diameter by 6.35-mm thick).  
1.4 Targets of various diameters and thicknesses are accommodated by suitable fixturing to align the pieve under test with the source magnet mounted in the test fixture. Tooling, covering several popular target designs is specified in this procedure. Additional target configurations may be tested by providing special tooling. When special fixturing is used all parties concerned with the testing must agree to the test setup.  
1.5 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only.  
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
1.2 The values stated in SI units are regarded as standard.

ABSTRACT
This specification covers refractory silicide sputtering targets for use in microelectronic applications. Targets shall be classified by the following major constituents: molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide. Target composition shall be stated as the atomic ratio of silicon to metal and shall conform to the prescribed maximum impurity level for: alkalis (potassium, lithium, sodium), refractory metals (molybdenum, tantalum, titanium, and tungsten), iron, other metals (aluminum, boron, calcium, cobalt, chromium, copper, magnesium, manganese, and nickel), carbon, and oxygen. Low alpha grade targets shall contain the prescribed maximum impurity level of uranium and thorium Dimensional and physical properties such as relative, actual, and theoretical densities are specified. The actual target density shall be determined by Archimedes principle or other acceptable techniques and the theoretical density shall be calculated from the given formula. The following chemical analytical methods shall be used: atomic absorption, combustion or infrared spectrometry, inert gas fusion, and alpha-emission rate analysis, depending on the impurity to be analyzed. There shall be no radial cracks, other cracks, or chips on the sputtering surface.
SCOPE
1.1 This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
1.2 The values stated in SI units are regarded as standard.

SIGNIFICANCE AND USE
This practice supplements Practice E 1001 by indicating specific equipment choices and test arrangements appropriate for evaluating sputtering target bonds.
The bond between sputtering target and its supporting backing plate is a critical reliability element in a sputter deposition system. A bond must have high thermal conductivity to provide adequate target cooling during sputtering. The target-backing plate joint must also have strength enough to withstand the shear stresses caused by differential thermal expansion between target and backing plate.
Flaws in a bond, for example, voids in the joining material, degrade bond performance. An inadequate bond may fail in service, potentially causing catastrophic separation of the target from the backing plate. Assurance of sound bonds is an important concern among users of sputtering equipment.
Ultrasonic testing is accepted as an efficient method for evaluating target bonds, but differences in technique inhibit intercomparison of results from one laboratory to another. This practice is intended to promote uniformity in use so that specifications for bond integrity may be universally applied.
The C-span display of ultrasonic test data is a direct method for visually demonstrating bond character. Practice E 1001 upon which this practice is modeled, however, does not address C-scan display. Instructions specific to the C-scan display mode are indicated in this practice. In other respects this practice is a section by section commentary on Practice E 1001.
SCOPE
1.1 This practice describes a method for ultrasonic mapping of the soundness of a bond joining a sputtering target to its supporting backing plate. The results of the examination may be used in predicting the target-backing plate assembly's suitability for use. Accept/reject standards are not specified; these are subject to agreement between target supplier and user, depending upon the application requirements.
1.2 This standard is intended to be used with Practice E1001.
1.3 The method reveals unbonded areas 0.125 in. (3 mm) in diameter and larger. The technique permits, for example, unambiguous quantitative measurement of the voided area in solder bonds.
1.3.1 This technique may also show regions in which bond integrity is marginally degraded by imperfect adhesion, for example, areas in which oxide inclusion has inhibited the development of full bond strength. Evaluation of indications of degraded bond areas may vary in rigor from purely subjective to semiquantitative. Target supplier and user must agree upon the means used to display and grade partially bonded areas.
1.4 This practice is applicable to assemblies having planar bonds in which the design provides at least one flat plane parallel to the bond that may be used as the entry/exit surface for ultrasonic excitation.
1.5 Only the immersion pulse-echo method is covered.
1.6 Evaluation by this method is intended to be nondestructive. For target assemblies that would be degraded by immersion in demineralized water, for example, for porous target materials, the test should be considered a destructive one.
1.7 This practice is applicable to bonding methods that use a filler material to join the target and backing plate. These include solder, epoxy, and braze bonds.
1.8 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This specification covers pure aluminum metal (unalloyed) for use in evaporation sources and sputtering targets. This material is intended as a raw material for electronic applications. The material is used as-supplied in some cases (for example, as e-beam evaporation sources). In other instances it may be remelted, alloyed, cast and processed by the purchaser to make finished products (for example, sputtering targets).  
1.2 This specification sets purity grade levels, physical attributes, analytical methods, and packaging.  
1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

ABSTRACT
This specification sets purity grade levels, physical attributes, analytical methods, and packaging of three grades of pure unalloyed aluminum source materials for electronic thin film applications such as evaporation sources and sputtering targets. The impurity levels should be analyzed using the proposed method and should be within the specified range for each grade.
SCOPE
1.1 This specification covers pure aluminum metal (unalloyed) for use in evaporation sources and sputtering targets. This material is intended as a raw material for electronic applications. The material is used as-supplied in some cases (for example, as e-beam evaporation sources). In other instances it may be remelted, alloyed, cast and processed by the purchaser to make finished products (for example, sputtering targets).  
1.2 This specification sets purity grade levels, physical attributes, analytical methods, and packaging.  
1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

ABSTRACT
This specification covers pure aluminum metal (unalloyed) for use as source material for vacuum coating applications. Aluminum metal shall conform to the following requirements: purity grade levels, grain size, dimensions, maximum impurity level, workmanship, finish, appearance, sampling, and packaging. Impurity analysis shall be performed using optical emission spectroscopy and atomic absorption.
SCOPE
1.1 This specification covers pure aluminum metal (unalloyed) for use as raw material for making evaporation sources, sputtering targets, and superconducting wires.  
1.2 This specification sets purity grade levels, physical attributes, analytical methods, and packaging requirements.

SCOPE
1.1 This practice describes a method for ultrasonic mapping of the soundness of a bond joining a sputtering target to its supporting backing plate. The results of the examination may be used in predicting the target-backing plate assembly's suitability for use. Accept/reject standards are not specified; these are subject to agreement between target supplier and user, depending upon the application requirements.
1.2 This standard is intended to be used with Practice E1001.
1.3 The method reveals unbonded areas 0.125 in. (3 mm) in diameter and larger. The technique permits, for example, unambiguous quantitative measurement of the voided area in solder bonds.
1.3.1 This technique may also show regions in which bond integrity is marginally degraded by imperfect adhesion, for example, areas in which oxide inclusion has inhibited the development of full bond strength. Evaluation of indications of degraded bond areas may vary in rigor from purely subjective to semiquantitative. Target supplier and user must agree upon the means used to display and grade partially bonded areas.
1.4 This practice is applicable to assemblies having planar bonds in which the design provides at least one flat plane parallel to the bond that may be used as the entry/exit surface for ultrasonic excitation.
1.5 Only the immersion pulse-echo method is covered.
1.6 Evaluation by this method is intended to be nondestructive. For target assemblies that would be degraded by immersion in demineralized water, for example, for porous target materials, the test should be considered a destructive one.
1.7 This practice is applicable to bonding methods that use a filler material to join the target and backing plate. These include solder, epoxy, and braze bonds.
1.8 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This specification covers pure aluminum metal (unalloyed) for use as raw material for making evaporation sources, sputtering targets, and superconducting wires.  
1.2 This specification sets purity grade levels, physical attributes, analytical methods, and packaging requirements.

ABSTRACT
This specification covers sputtering targets fabricated from chromium metal for use in thin film applications. The grades of chromium covered in this specification, are based on the total metallic impurity content of the metallic elements, and are classified as 4N, 3N7, 3N5, 3N, and 2N8. Materials shall be tested using analytical methods such as combustion/infrared spectrometry, thermal conductivity, atomic absorption spectrometry, direct current plasma, inductively coupled plasma, and spark source mass spectroscopy or glow discharge mass spectroscopy; and the individual grades shall conform to specified values of chemical composition, density, grain size.
SCOPE
1.1 This specification covers sputtering targets fabricated from chromium metal.
1.2 This specification sets purity grade levels, physical attributes, analytical methods and packaging requirements.
1.3 The values stated in SI units are regarded as standard.

SCOPE
1.1 This specification covers sputtering targets fabricated from chromium metal.
1.2 This specification sets purity grade levels, physical attributes, analytical methods and packaging requirements.
1.3 The values stated in SI units are regarded as standard.

ABSTRACT
This test method covers the measurement of the sheet resistance of metallic thin films with a collinear four-probe array. It is intended for use with rectangular metallic films formed by deposition of a material or by a thinning process and supported by an insulating substrate. This test method is suitable for referee measurement purposes as well as for routine acceptance measurements. A collinear four-probe array is used to determine the sheet resistance by passing a measured direct current through the specimen between the outer probes and measuring the resulting potential difference between the inner probes. The sheet resistance is calculated from the measured current and potential values using correction factors associated with the geometry of the specimen and the probe spacing. The accuracy of the electrical measuring equipment is tested by means of an analog circuit containing a known standard resistor together with other resistors which simulate the resistance at the contacts between the probe tips and the film surface.
SCOPE
1.1 This test method covers the measurement of the sheet resistance of metallic thin films with a collinear four-probe array. It is intended for use with rectangular metallic films between 0.01 and 100 [mu]m thick, formed by deposition of a material or by a thinning process and supported by an insulating substrate, in the sheet resistance range from 10   to 10  [omega]/[open-box] (see 3.1.3).  
1.2 This test method is suitable for referee measurement purposes as well as for routine acceptance measurements.  
1.3 The values stated in Si units are to be regarded as the standard. The values given in parentheses are for information only.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This test method covers the measurement of the sheet resistance of metallic thin films with a collinear four-probe array. It is intended for use with rectangular metallic films between 0.01 and 100 [mu]m thick, formed by deposition of a material or by a thinning process and supported by an insulating substrate, in the sheet resistance range from 10   to 10  [omega]/[open-box] (see 3.1.3).  
1.2 This test method is suitable for referee measurement purposes as well as for routine acceptance measurements.  
1.3 The values stated in Si units are to be regarded as the standard. The values given in parentheses are for information only.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
This test method can be used to ensure absolute reproducibility of WSix film deposition systems over the course of many months. The time span of measurements is essentially the life of many process deposition systems.
This test method can be used to qualify new WSix  deposition systems to ensure duplicability of existing systems. This test method is essential for the coordination of global semiconductor fabrication operations using different analytical services. This test method allows samples from various deposition systems to be analyzed at different sites and times.
This test method is the chosen calibration technique for a variety of analytical techniques, including, but not limited to:
5.3.1 Electron spectroscopy for chemical analysis (ESCA or XPS),
5.3.2 Auger electron spectroscopy (AES),
5.3.3 Fourier transform infrared red spectroscopy (FTIR),
5.3.4 Secondary ion mass spectrometry (SIMS), and
5.3.5 Electron dispersive spectrometry (EDS) and particle induced x-ray emission (PIXE).
SCOPE
1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSIx), semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus A (31 atomic mass units (amu) to antimony (122 amu).  
1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (~2.5 mm).
1.3 This test method accurately measures he following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSIx, film thickness, argon concentrations (if present), presence of oxide on surface of WSIx films, and transition metal impurities to detection limits of 1 x 10 14 atoms/cm2.
1.4 This test method can detect absolute differences in silicon and tungsten concentrations of +/- 3 and +/- 1 atomic percent, respectively, measured from different samples in separate analyses. relative variations in the tungsten concentration in depth can be detected to +/- 0.2 atomic percent with a depth resolution of +/- 70A.  
1.5 This test method supports and assists in qualifying WSIx films by electrical resistivity techniques.  
1.6 This test method can be performed for WSIx films deposited on conducting or insulating substrates.  
1.7 This test method is useful for WSIx films between 20 and 400 mm with an areal coverage of greater than 1 by 1 mm.  
1.8 This test method is non-destructive to the film to the extent of sputtering.  
1.9 A statistical process control (SPC) of WSIx films has been monitored since 1993 with reproducibility to +/- 4%.  
1.10 This test method produces accurate film thicknesses by modeling the film density of the WSIx film as WSI2 (hexagonal) plus excess elemental SI2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10% compared to SEM cross-section measurements (see 13.4)  
1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities.  
1.12 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The reader is referenced to Section 8 of this test method for references to some of the regulatory, radiation, and safety considerations involved with accelerator operation.

SCOPE
1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSIx), semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus A (31 atomic mass units (amu) to antimony (122 amu).  
1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (~2.5 mm).
1.3 This test method accurately measures he following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSIx, film thickness, argon concentrations (if present), presence of oxide on surface of WSIx films, and transition metal impurities to detection limits of 1 x 10 14 atoms/cm2.
1.4 This test method can detect absolute differences in silicon and tungsten concentrations of +/- 3 and +/- 1 atomic percent, respectively, measured from different samples in separate analyses. relative variations in the tungsten concentration in depth can be detected to +/- 0.2 atomic percent with a depth resolution of +/- 70A.  
1.5 This test method supports and assists in qualifying WSIx films by electrical resistivity techniques.  
1.6 This test method can be performed for WSIx films deposited on conducting or insulating substrates.  
1.7 This test method is useful for WSIx films between 20 and 400 mm with an areal coverage of greater than 1 by 1 mm.  
1.8 This test method is non-destructive to the film to the extent of sputtering.  
1.9 A statistical process control (SPC) of WSIx films has been monitored since 1993 with reproducibility to +/- 4%.  
1.10 This test method produces accurate film thicknesses by modeling the film density of the WSIx film as WSI2 (hexagonal) plus excess elemental SI2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10% compared to SEM cross-section measurements (see 13.4)  
1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities.  
1.12 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates (glass or plastic), used in making flat panel information displays.

SCOPE
1.1 This test method determines the concentrations of trace metallic impurities in high purity (99.99 wt. % pure, or purer, with respect to metallic trace impurities) aluminum-copper, aluminum-silicon and aluminum-copper-silicon alloys with major alloy constituents as follows:
aluminum---Greater than 95.0%  copper---Less or equal than 5.0%  silicon---Less or equal than 5.0%
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparations, setting of relative sensitivity factors, determination of detection limits, etc.) known by the responsible technical committee to effect the reliability of high purity aluminum analyses.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The aluminum matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, silicon or copper, greater than 1000 weight ppm in concentration.  
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to affect the reliability of high purity aluminum analyses.

SCOPE
1.1 This test method covers the determination of concentrations of trace metallic impurities in high purity titanium.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The titanium matrix must be 99.9 weight percent (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, aluminum or iron, greater than 1000 weight ppm in concentration.  
1.4 this test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to effect the reliability of high purity titanium analyses.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.  
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.

SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates, used in making flat panel information displays. It is assumed that the thickness of the conductive thin film is much thinner than the spacing of the contact probes used to measure the sheet resistance.  
1.2 This standard is intended to be used with Test Method F 390.  
1.3 Sheet resistively in the range of 0.5 to 5000 ohms per square may be measured by this practice. The sheet resistance is assumed uniform in the area being probed.  
1.4 This practice is applicable to flat surfaces only.  
1.5 Probe pin spacings of 1.5 mm to 5.0 mm, inclusive (0.059 to 0.197in. inclusive) are covered by this practice.  
1.6 The method in this practice is potentially destructive to the thin film in the immediate area in which the measurement is made. Areas tested should thus be characteristic of the functional part of the substrate, but should be remote from critical active regions. The method is suitable for characterizing dummy test substrates processed at the same time as substrates of interest.  
1.7 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.  
1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

SIGNIFICANCE AND USE
4.1 Resistivity is a primary quantity for characterization and specification of coated glass plates used for flat panel displays. Sheet resistance is also a primary quantity for characterization, specification, and monitoring of thin film fabrication processes.  
4.2 This practice requires no specimen preparation.  
4.3 The eddy current method is non-destructive to the thin film being measured. Special geometrical correction factors, needed for some four-point probe electrical resistivity measurements, are not required to derive the true sheet resistance so long as the transducers have a continuous layer of conductive thin film between them.  
4.4 Test Methods F673 refers to a testing arrangement in which the transducers and specimen (a semiconductor grade silicon wafer) are rigidly positioned. Similar apparatus is commercially available for testing large glass or plastic substrates, not envisioned in the scope of Test Methods F673. A hand held probe can also be used, depending on throat depth required.  
4.5 For use as a referee method, the probe and measuring apparatus must first be checked and qualified before use by the procedures of Test Methods F673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5), then this practice is used.  
4.6 For use as a routine quality assurance method, this practice may be employed with periodic qualifications of probe and measuring apparatus by the procedures of Test Methods F673 (9.1.1 through 9.1.3 and 9.1.4.2 through 9.1.4.5). The parties to the test must agree upon adequate qualification intervals for the test apparatus.
SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates (glass or plastic), used in making flat panel information displays.  
1.2 This practice is intended to be used with Test Methods F673. This practice pertains to a “manual” measurement procedure in which an operator positions the measuring head on the test specimen and then personally activates the test apparatus. The resulting test data may be tabulated by the operator, or, alternatively, sent to a computer-based data logging system. Both Methods I and II of Test Methods F673 (paragraphs 3.1 through 3.3.3 of Test Methods F673) are applicable to this practice.  
1.3 Sheet resistivity in the range 0.020 to 3000 Ω per square (sheet conductance in the range 3 by 10–4  to 50 mhos per square) may be measured by this practice. The sheet resistance is assumed to be uniform in the area being probed.
Note 1: Typical manual test units, as described in this practice, measure and report in the units “mhos per square”; this is the inverse of “ohms per square.”  
1.4 This practice is applicable to flat surfaces only.  
1.5 This practice is non-destructive. It may be used on production panels to help assure production uniformity.  
1.6 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates (glass or plastic), used in making flat panel information displays.
Formerly under the jurisdiction of Committee F01 on Electronics, this practice was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

SIGNIFICANCE AND USE
5.1 This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.  
5.2 This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure titanium. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.  
5.3 For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.  
5.4 This test method may be used as a referee method for producers and users of electronic-grade titanium materials.
SCOPE
1.1 This test method covers the determination of concentrations of trace metallic impurities in high purity titanium.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The titanium matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, aluminum or iron, greater than 1000 weight ppm in concentration.  
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to effect the reliability of high purity titanium analyses.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers the determination of concentrations of trace metallic impurities in high purity titanium.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

SIGNIFICANCE AND USE
5.1 This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.  
5.2 This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in aluminum-copper, aluminum-silicon, and aluminum-copper-silicon alloys. The objective is to improve laboratory-to-laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.  
5.3 For most metallic species the detection limit for routine analysis is on the order of 0.01 wt. ppm. With special precautions, detection limits to sub-ppb levels are possible.  
5.4 This test method may be used as a referee method for producers and users of electronic-grade aluminum-copper, aluminum-silicon and aluminum-copper-silicon materials.
SCOPE
1.1 This test method determines the concentrations of trace metallic impurities in high purity (99.99 wt. % pure, or purer, with respect to metallic trace impurities) aluminum-copper, aluminum-silicon and aluminum-copper-silicon alloys with major alloy constituents as follows:    
aluminum  
Greater than 95.0 %  
copper  
Less or equal than 5.0 %  
silicon  
Less or equal than 5.0 %  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of detection limits, etc.) known by the responsible technical committee to effect the reliability of high purity aluminum analyses.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method determines the concentrations of trace metallic impurities in high purity (99.99 wt. % pure, or purer, with respect to metallic trace impurities) aluminum-copper, aluminum-silicon and aluminum-copper-silicon alloys.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

SIGNIFICANCE AND USE
5.1 This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon by the parties concerned.  
5.2 This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure aluminum. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.  
5.3 For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.  
5.4 This test method may be used as a referee method for producers and users of electronic-grade aluminum materials.
SCOPE
1.1 This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.  
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).  
1.3 The aluminum matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, silicon or copper, greater than 1000 weight ppm in concentration.  
1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to affect the reliability of high purity aluminum analyses.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

ABSTRACT
This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.
SCOPE
1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.  
1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.  
1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.
WITHDRAWN RATIONALE
This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.
Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

SIGNIFICANCE AND USE
5.1 Applying Test Method F390 to large flat panel substrates presents a number of serious difficulties not anticipated in the development of that standard. The following problems are encountered.  
5.1.1 The four-point probe method may be destructive to the thin film being measured. Sampling should therefore be taken close to an edge or corner of the plate, where the film is expendable. Special geometrical correction factors are then required to derive the true sheet resistance.  
5.1.2 Test Method F390 is limited to a conventional collinear probe arrangement, but a staggered collinear and square arrays are useful in particular circumstances. Correction factors are needed to account for nonconventional probe arrangements.  
5.1.3 Test Method F390 anticipates a precision testing arrangement in which the probe mount and sample are rigidly positioned. There is no corresponding apparatus available for testing large glass or plastic substrates. Indeed, it is common in flat panel display making that the probe is hand held by the operator.  
5.1.4 It is difficult, given the conditions cited in 5.1.3, to ensure that uniform probe spacing is not degraded by rough handling of the equipment. The phased square array, described, averages out probe placement errors.  
5.1.5 This practice is estimated to be precise to the following levels. Otherwise acceptable precision may be degraded by probe wobble, however (see 8.6.4).
5.1.5.1 As a referee method, in which the probe and measuring apparatus are checked and qualified before use by the procedures of Test Method F390 paragraph 7 and this practice, paragraph 8: standard deviation, s, from measured sheet resistance, RS, is ≤ 0.01  RS.
5.1.5.2 As a routine method, with periodic qualifications of probe and measuring apparatus by the procedures of Test Method F390 paragraph 7 and this practice, paragraph 8: standard deviation, s, from measured sheet resistance,  RS, is ≤ 0.02  RS.
SCOPE
1.1 This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates, used in making flat panel information displays. It is assumed that the thickness of the conductive thin film is much thinner than the spacing of the contact probes used to measure the sheet resistance.  
1.2 This standard is intended to be used with Test Method F390.  
1.3 Sheet resistivity in the range 0.5 to 5000 ohms per square may be measured by this practice. The sheet resistance is assumed uniform in the area being probed.  
1.4 This practice is applicable to flat surfaces only.  
1.5 Probe pin spacings of 1.5 mm to 5.0 mm, inclusive (0.059 to 0.197 in inclusive) are covered by this practice.  
1.6 The method in this practice is potentially destructive to the thin film in the immediate area in which the measurement is made. Areas tested should thus be characteristic of the functional part of the substrate, but should be remote from critical active regions. The method is suitable for characterizing dummy test substrates processed at the same time as substrates of interest.  
1.7 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.  
1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This practice describes methods for measuring the sheet electrical resistance of sputtered thin conductive films deposited on large insulating substrates, used in making flat panel information displays. It is assumed that the thickness of the conductive thin film is much thinner than the spacing of the contact probes used to measure the sheet resistance.
Formerly under the jurisdiction of Committe...

ABSTRACT
This specification establishes the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging. It covers purity (metallic and non-metallic element impurities), grain size, inner quality (internal defect), bonding (backing plate, bonding ratio), configuration (dimension, tolerance, surface roughness), and appearance (surface cleanness). It also includes sampling, traceability, reliability, certification, and packaging requirements.
SCOPE
1.1 This specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.  
1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.  
1.2.1 Purity Requirements:  
1.2.1.1 Metallic element impurities, and
1.2.1.2 Non-metallic element impurities.  
1.2.2 Grain Size Requirements—Grain size.  
1.2.3 Inner Quality Requirements—Internal defect.  
1.2.4 Bonding Requirements:  
1.2.4.1 Backing plate, and
1.2.4.2 Bonding ratio.  
1.2.5 Configuration Requirements:  
1.2.5.1 Dimension,
1.2.5.2 Tolerance, and
1.2.5.3 Surface roughness.  
1.2.6 Appearance Requirements—Surface cleanness.  
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.
Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

SCOPE
1.1 This specification details the generic criteria requirements of high pure titanium sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advance packaging.  
1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.  
1.2.1 Purity Requirements:  
1.2.1.1 Metallic element impurities, and
1.2.1.2 Non-metallic element impurities.  
1.2.2 Grain Size Requirements—Grain size.  
1.2.3 Inner Quality Requirements—Internal defect.  
1.2.4 Bonding Requirements:  
1.2.4.1 Backing plate, and
1.2.4.2 Bonding ratio.  
1.2.5 Configuration Requirements:  
1.2.5.1 Dimension,
1.2.5.2 Tolerance, and
1.2.5.3 Surface roughness.  
1.2.6 Appearance Requirements—Surface cleanness.  
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This specification details the generic criteria requirements of high pure titanium sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advance packaging.
Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

ABSTRACT
This specification covers refractory silicide sputtering targets for use in microelectronic applications. Targets shall be classified by the following major constituents: molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide. Target composition shall be stated as the atomic ratio of silicon to metal and shall conform to the prescribed maximum impurity level for: alkalis (potassium, lithium, sodium), refractory metals (molybdenum, tantalum, titanium, and tungsten), iron, other metals (aluminum, boron, calcium, cobalt, chromium, copper, magnesium, manganese, and nickel), carbon, and oxygen. Low alpha grade targets shall contain the prescribed maximum impurity level of uranium and thorium Dimensional and physical properties such as relative, actual, and theoretical densities are specified. The actual target density shall be determined by Archimedes principle or other acceptable techniques and the theoretical density shall be calculated from the given formula. The following chemical analytical methods shall be used: atomic absorption, combustion or infrared spectrometry, inert gas fusion, and alpha-emission rate analysis, depending on the impurity to be analyzed. There shall be no radial cracks, other cracks, or chips on the sputtering surface.
SCOPE
1.1 This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
WITHDRAWN RATIONALE
This specification covers sputtering targets fabricated from metallic silicides (molybdenum silicide, tantalum silicide, titanium silicide, and tungsten silicide). These targets are referred to as refractory silicide targets, and are intended for use in microelectronic applications.
Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in January 2020 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.

SIGNIFICANCE AND USE
This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon between the parties concerned.
This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in copper. The objective is to improve laboratory-to-laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.
For most metallic species, the detection limit for routine analysis is on the order of 0.01 wt. ppm. With special precautions, detection limits to sub-ppb levels are possible.
This test method may be used as a referee method for producers and users of electronic-grade copper materials.
SCOPE
1.1 This test method covers the concentrations of trace metallic impurities in high purity (99.95 wt. % pure, or purer, with respect to metallic trace impurities) electronic grade copper.
1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).
1.3 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of detection limits, and the like) known by the responsible technical committee to effect the reliability of high purity copper analyses.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers the concentration of trace metallic impurities in high purity (99.05 wt. % pure, or purer, with respect to metallic trace impurities) electronic grade copper.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in January 2020 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.

SIGNIFICANCE AND USE
This test method can be used to ensure absolute reproducibility of WSix film deposition systems over the course of many months. The time span of measurements is essentially the life of many process deposition systems.
This test method can be used to qualify new WSix  deposition systems to ensure duplicability of existing systems. This test method is essential for the coordination of global semiconductor fabrication operations using different analytical services. This test method allows samples from various deposition systems to be analyzed at different sites and times.
This test method is the chosen calibration technique for a variety of analytical techniques, including, but not limited to:
Electron spectroscopy for chemical analysis (ESCA or XPS),
Auger electron spectroscopy (AES),
Fourier transform infrared red spectroscopy (FTIR),
Secondary ion mass spectrometry (SIMS), and
Electron dispersive spectrometry (EDS) and particle induced x-ray emission (PIXE).
SCOPE
1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSix) semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus Å (31 atomic mass units (amu) to antimony (122 amu).
1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (∼2.5 mm).
1.3 This test method accurately measures the following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSix film thickness, argon concentrations (if present), presence of oxide on surface of WSix films, and transition metal impurities to detection limits of 1×1014 atoms/cm2.
1.4 This test method can detect absolute differences in silicon and tungsten concentrations of ±3 and ±1 atomic percent, respectively, measured from different samples in separate analyses. Relative variations in the tungsten concentration in depth can be detected to ±0.2 atomic percent with a depth resolution of ±70Å.
1.5 This test method supports and assists in qualifying WSix films by electrical resistivity techniques.
1.6 This test method can be performed for WSix films deposited on conducting or insulating substrates.
1.7 This test method is useful for WSix  films between 20 and 400 nm with an areal coverage of greater than 1 by 1 mm2.
1.8 This test method is non-destructive to the film to the extent of sputtering.
1.9 A statistical process control (SPC) of WSix  films has been monitored since 1993 with reproducibility to ±4 %.
1.10 This test method produces accurate film thicknesses by modeling the film density of the WSix  film as WSi2  (hexagonal) plus excess elemental Si2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10 % compared to SEM cross-section measurements (see 13.4).
1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities.
1.12 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.13 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.  The reader is referenced to Section 8 of this test method for references to some of the regulatory, radiation, and safety considerations involved with accelerator operation.
WITHD...

SIGNIFICANCE AND USE
It is standard practice to use magnetron cathode sputter deposition sources in manufacturing thin film magnetic data storage media. But a ferromagnetic sputtering target tends to shunt a sputtering cathode's magnetic field, thus reducing the efficiency of the sputtering process.
Makers of sputtering targets have developed various means of controlling alloy microstructure to minimize the undesirable cathode shunting effect. Because of their differing manufacturing methods, however, the targets of one supplier may have magnetic properties significantly better or worse than those of another, even when the alloy compositions are the same.  
This test method permits comparing the magnetic shunting power of magnetic targets under a standard test condition. The results are useful to sputtering target suppliers and buyers in predicting target performance, in specifying target quality, and in qualifying incoming target shipments. This test may also be useful in quantifying target improvement efforts.
Manufacturing process steps that lower a target material's magnetic permeability tend to increase the PTF, and vice versa. It would in principle be possible to predict the PTF by accumulating sufficient permeability data, and knowing the target thickness and the field intensity of the magnetic assembly used for magnetron sputtering.
SCOPE
1.1 This test method covers measuring the dc magnetic field transmitted through a ferromagnetic sputtering target (“pass through flux” or “PTF”). In this test method the source magnetic field is in the test target's circumferential direction.
1.2 Planar disk-shaped targets in the diameter range 5 to 8 in. inclusive (125 to 205 mm inclusive) and of thickness 0.1 to 0.5 in. inclusive (2.5 to 13 mm) may be characterized by this procedure.
1.3 This test method is also applicable to targets having an open center, for example, to targets 5-in. outside diameter by 2.5-in. inside diameter by 0.25-in. thick (127-mm outside diameter by 63.5-mm inside diameter by 6.35-mm thick).
1.4 Targets of various diameters and thicknesses are accommodated by suitable fixturing to align the piece under test with the source magnet mounted in the test fixture. Tooling, covering several popular target designs is specified in this procedure. Additional target configurations may be tested by providing special tooling. When special fixturing is used all parties concerned with the testing must agree to the test setup.
1.5 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers measuring the dc magnetic field transmitted through a ferromagnetic sputtering target (“pass through flux” or “PTF”). In this test method the source magnetic field is in the test target's circumferential direction.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in January 2020 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.