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ASTM F1526-95(2000)

(Test Method)

Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)

Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)

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This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers the quantitative determination of elemental areal density on the surface of polished single crystal silicon substrates using total reflection X-ray fluorescence spectroscopy (TXRF) with a monochromatic X-ray source.
1.2 This test method can be used for both  n-type and p-type silicon.
1.3 This test method can be used to detect surface elemental contamination that is within the analyte depth of approximately 5 nm for highly mirror-polished silicon wafers. The analytic depth increases with surface roughness.
1.4 This test method is especially useful for determining the surface elemental areal densities in the native oxide or in chemically grown oxide of polished silicon wafers after cleaning.
1.5 This test method is useful for elemental areal densities between 109 and 1015 atoms/cm2 within the measurement area. See Annex A1 for a discussion of the relationship between repeatability and detection limit.
1.6 This test method is useful for detecting elements with atomic number between 16 (S) and 92 (U), depending upon the X-ray source provided in the instrument. This test is especially useful for detecting the following metals or elements: potassium, calcium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, molybdenum, palladium, silver, tin, tantalum, tungsten, platinum, gold, mercury, and lead.
1.7 The detection limit depends upon atomic number, excitation energy, photon flux of excitation X-rays, instrumental background, integration time, and blank value. For constant instrumental parameters, the interference-free detection limits vary over two orders of magnitude as a function of atomic number of the element.
1.8 This test method is nondestructive.
1.9 This test method is complementary to a variety of other test methods:
1.9.1 Electron spectroscopy for chemical analysis that can detect elemental surface areal densities down to the order of 1013 atoms/cm2.
1.9.2 Auger electron spectroscopy that can detect elemental surface areal densities down to the order of 102 atoms/cm 2.
1.9.3 Nitrogen-beam Rutherford backscattering spectrometry that can detect down to 1010 atoms/cm2 for some elements but cannot mass resolve heavy elements of nearby atomic number.
1.9.4 Secondary ion mass spectrometry that can detect low-atomic-number elemental areal densities in the range of 108 to 1012 atoms/cm2 but cannot provide adequate detection limits for transition metals with atomic number between 22 titanium and 30 zinc. This method is destructive.
1.9.5 Vapor phase decomposition (VPD) of surface metals followed by atomic absorption spectroscopy (AAS), where the metal detection limits are from 10 8 to 1011 atoms/cm2, but there is no spatial information available and the analysis time is longer than TXRF. This method is destructive.
1.10 This test method uses X-radiation; it is absolutely necessary to avoid personal exposure to X-rays. It is especially important to keep hands or fingers out of the path of the X rays and to protect the eyes from scattered secondary radiation. The use of commercial film badge or dosimeter service is recommended, together with periodic checks of the radiation level at the hand and body positions with a Geiger-Muller counter calibrated with a standard nuclear source. The present maximum permissible dose for total body exposure of an individual to external X-radiation of quantum energy less than 3 MeV over an indefinite period is 1.25 R (3.22 10-4 C/kg) per calendar quarter (equivalent to 0.6 mR/h (1.5 10-7 C/kg-h) as established in the Code of Federal Regulations, Title 10, Part 20. The present maximum permissible dose of hand and forearm exposure under the same conditions is 18.75 R (4.85 X 10 -3 C/kg) per calendar quarter (equivalent to 9.3 mR/h (2.4 10  -6 C/kg-h)). Besides the above stated regulations, various other government and regulatory organizations ha...

General Information

Status
Withdrawn
Publication Date
31-Dec-1999
Withdrawal Date
09-May-2003
ICS
29.045 - Semiconducting materials
Technical Committee
F01 - Electronics
Current Stage
Ref Project

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ASTM F1526-95(2000) - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)ASTM F1526-95(2000) - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)
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ASTM F1526-95(2000) - Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1526 – 95 (Reapproved 2000)
Standard Test Method for
Measuring Surface Metal Contamination on Silicon Wafers
1
by Total Reflection X-Ray Fluorescence Spectroscopy
This standard is issued under the fixed designation F 1526; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope vary over two orders of magnitude as a function of atomic
number of the element.
1.1 This test method covers the quantitative determination
1.8 This test method is nondestructive.
of elemental areal density on the surface of polished single
1.9 This test method is complementary to a variety of other
crystal silicon substrates using total reflection X-ray fluores-
2
test methods:
cence spectroscopy (TXRF ) with a monochromatic X-ray
3
1.9.1 Electron spectroscopy for chemical analysis that can
source.
detect elemental surface areal densities down to the order of 10
1.2 This test method can be used for both n-type and p-type
2
13 atoms/cm .
silicon.
1.9.2 Auger electron spectroscopy that can detect elemental
1.3 This test method can be used to detect surface elemental
2 2
surface areal densities down to the order of 10 atoms/cm .
contamination that is within the analyte depth of approximately
1.9.3 Nitrogen-beam Rutherford backscattering spectrom-
5 nm for highly mirror-polished silicon wafers. The analytic
10 2
4 etry that can detect down to 10 atoms/cm for some elements
depth increases with surface roughness.
but cannot mass resolve heavy elements of nearby atomic
1.4 This test method is especially useful for determining the
number.
surface elemental areal densities in the native oxide or in
1.9.4 Secondary ion mass spectrometry that can detect
chemically grown oxide of polished silicon wafers after
low-atomic-number elemental areal densities in the range of
cleaning.
8 12 2
10 to 10 atoms/cm but cannot provide adequate detection
1.5 This test method is useful for elemental areal densities
9 15 2
limits for transition metals with atomic number between 22
between 10 and 10 atoms/cm within the measurement area.
titanium and 30 zinc. This method is destructive.
See Annex A1 for a discussion of the relationship between
1.9.5 Vapor phase decomposition (VPD) of surface metals
repeatability and detection limit.
followed by atomic absorption spectroscopy (AAS), where the
1.6 This test method is useful for detecting elements with
8 11 2
metal detection limits are from 10 to 10 atoms/cm , but
atomic number between 16 (S) and 92 (U), depending upon the
there is no spatial information available and the analysis time
X-ray source provided in the instrument. This test is especially
is longer than TXRF. This method is destructive.
useful for detecting the following metals or elements: potas-
1.10 This test method uses X-radiation; it is absolutely
sium, calcium, titanium, vanadium, chromium, manganese,
necessary to avoid personal exposure to X-rays. It is especially
iron, cobalt, nickel, copper, zinc, arsenic, molybdenum, palla-
important to keep hands or fingers out of the path of the X rays
dium, silver, tin, tantalum, tungsten, platinum, gold, mercury,
and to protect the eyes from scattered secondary radiation. The
and lead.
use of commercial film badge or dosimeter service is recom-
1.7 The detection limit depends upon atomic number, exci-
mended, together with periodic checks of the radiation level at
tation energy, photon flux of excitation X-rays, instrumental
the hand and body positions with a Geiger-Muller counter
background, integration time, and blank value. For constant
calibrated with a standard nuclear source. The present maxi-
instrumental parameters, the interference-free detection limits
mum permissible dose for total body exposure of an individual
to external X-radiation of quantum energy less than 3 MeV
1
This test method is under the jurisdiction of ASTM Committee F01 on −4
over an indefinite period is 1.25 R (3.22 3 10 C/kg) per
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon
−7
calendar quarter (equivalent to 0.6 mR/h (1.5 3 10 C/kg-h)
Materials and Process Control.
Current edition approved Sept. 15, 1995. Published November 1995. Originally as established in the Code of Federal Regulations, Title 10, Part
published as F 1526 – 94. Last previous edition F 1526 – 94a.
20. The present maximum permissible dose of hand and
2
There are several acronyms in use: TXRF, TRFA, and TRXRF; however, TXRF
forearm exposure under the same conditions is 18.75 R
is the most common in the technical literature.
−3
3
(4.85 3 10 C/kg) per calendar quarter (equivalent to 9.3
There are some non-mo
...

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1.2 This test method is intended primarily for assessing the uniformity of layers formed by diffusion, epitaxy, ion implant and chemical vapor, or other deposition processes on a silicon substrate. The deposited film, which may be single crystal, polycrystalline or amorphous silicon, or a metal film, must be electrically isolated from the substrate. This can be accomplished if the layer is of opposite conductivity type from the substrate or is deposited over a dielectric layer such as silicon dioxide. This test method is capable of measuring films as thin as 0.05 m, but particular care is required for establishing reliable measurements for most films in the range below 0.2 m. Films that have a thickness up to half the probe separation can be measured without the use of a thickness-related correction factor. It may give misleading results for films formed by silicon on insulator technologies because of charge or charge trapping in the insulator.
1.3 This test method can be used to measure the sheet resistance uniformity of bulk substrates. However, the thickness of the substrate must be known to be constant or must be measured at all positions where sheet resistance values are measured in order to calculate relative variations in resistance reliably.
Note 2—The thickness correction factor for layers that are thicker than 0.5 times the probe spacing is known to vary more rapidly than that for single-configuration four-probe measurements, but such a correction has not yet been published. Until such a correction is published, resistivity values determined by the dual-configuration method will not be accurate for these thicker specimens; however, if the wafer has uniform thickness, variations of resistivity can still be determined by this test method.
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Note 3—The principles of this test method are also applicable to other semiconductor materials, but the appropriate conditions and the expected precision have not been established.
1.5 This test method uses two different electrical configurations of the four-point probe at each measurement location. It does not require measurement of probe location on the wafer, or probe separations, or of wafer diameter (except to determine edge exclusion for measurement-site selection) as do other four-point probe methods...

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Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

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1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.
1.2 This test method is intended as both a referee and production test through selection of an appropriate test position plan.
1.3 The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test.
Note 1—Test Method F 1366 is not based on infrared absorption measurement and it measures total oxygen content, not interstitial oxygen content. It is also a destructive technique. However, it can be used to determine the radial variation of the oxygen content if suitable modifications of the test procedure are made.
1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

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Standard Test Method for Thickness and Thickness Variation of Silicon Wafers

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1.1 This test method  covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer.  
1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. However, it can be applied to circular silicon wafers, or substrates of any diameter and thickness that can be handled without breaking.  
1.3 This test method is suitable for both contact and contactless gaging equipment. Precision statements have been established for each.  
1.4 The values stated in inch-pound units are to be regarded as standard. The values in parentheses are for information only.  
1.5  This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

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