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ASTM F1188-02

(Test Method)

Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)

Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature. This test method requires the use of an oxygen-free reference specimen. It is recommended that a reference material, such as NIST SRM 2551, another certified reference material for oxygen content of silicon, or reference materials traceable to the CRMs, be used to calibrate the spectrophotometer in order to reduce bias.
1.2 This test method requires the use of a computerized spectrophotometer, preferably an FT-IR spectrophotometer. This method is incorporated into many modern FT-IR instruments.
1.3 The useful range of oxygen concentration measurable by this test method is from 1 X 1016 atoms/cm 3 to the maximum amount of interstitial oxygen soluble in silicon.
1.4 If the spectrophotometer is calibrated using 2-mm thick double-side polished CRMs, this test method is suitable for use only with 2-mm thick, double-side polished test specimens. It can be extended to the measurement of test specimens polished on one or both sides with thickness in the range 0.4 to 4 mm with the use of working reference materials traceable to the CRMs.
1.5 The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm1 band associated with interstitial oxygen in silicon.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Withdrawn
Publication Date
09-Dec-2002
Withdrawal Date
11-Aug-2003
ICS
29.045 - Semiconducting materials
Technical Committee
F01 - Electronics
Current Stage
Ref Project

Relations

Replaces
ASTM F1188-00 - Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
Effective Date
10-Dec-2002

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ASTM F1188-02 - Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)ASTM F1188-02 - Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)
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ASTM F1188-02 - Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1188 – 02
Standard Test Method for
Interstitial Atomic Oxygen Content of Silicon by Infrared
1
Absorption with Short Baseline
This standard is issued under the fixed designation F 1188; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
−1
Prior to 2002, Test Method F 1188 used a long baseline for the 1107 cm oxygen absorption peak.
This long baseline was drawn between the average transmittances in the regions from 900 to 1000
−1 −1
cm and from 1200 to 1300 cm . The same baseline was used in Test Method F 121, the predecessor
to Test Method F 1188, and also in the analysis of infrared data from the Grand Round Robin (GRR)
2
experiment. The GRR experiment resulted in a calibration factor between the infrared absorption
−1
coefficient at 1107 cm and the absolute interstitial oxygen content known as “IOC-88.” This
calibration factor is utilized in the current editions of all know standardized test methods for oxygen
content of silicon, including DIN 50438, Part 1; and JEIDA 61; as well as the current Chinese National
Standard (GB).
This test method is being retained in the form published in the 1993a edition of this test method in
Annex A1. However, the long baseline is subject to uncertainties due to perturbations in the IR
absorption at the end-point regions arising from effects other than absorption by interstitial oxygen.
−1 3
Use of a shorter baseline, drawn between 1040 and 1160 cm , which is less afftected in this manner,
results in improved precision of the method. Use of the shorter baseline is being introduced into this
test method to replace the long baseline method. Although the use of this baseline results in a
somewhat smaller net absorption coefficient for the same oxygen content, this change is not very large,
and can be neglected in most cases. Optionally, ot completely eliminate the effect of the baseline
changes, the measurement equipment may be claibrated with suitable certified reference materials
(CRMs) or reference materials derived from CRMs.
4 5,6
NIST SRM 2551 oxygen-in-silicon reference material, which is the principal CRM used for
calibrating commercial infrared spectrophometers for oxygen measurements, was certified using a
subset of the GRR specimens as the absolute references. Both the GRR specimens and the SRM
specimens were measured using a short baseline similar to that now incorporated in this test method.
This resulted in (1) reduced measurement uncertainty for the SRM specimens, and (2) a strong
metrological foundation provided by the GRR specimens. Consequently, the IOC-88 results are
available to the users of the SRMs without requiring a change in the calibration factor even though
the short-baseline method is used.
Despite the fact that IOC-88 has been adopted by all of the major standards developing
organizations active in the semiconductor field, many older calibration factors that have been used in
earlier standards issued by ASTM and other standards development organizations are still in use in the
industry today. Tables showing the relations between the IOC-88 interstitial oxygen calibration factor
and other standardized calibration factors that have been used in the silicon semiconductor industry
are included as Appendix X1. It should be emphasized that these factors are at times referred to in the
literature by common names (as listed in the first column of the tables in Appendix X1) and at other
times by the designation of the standard where they were used. Furthermore, in the jargon of the
industry, interstitial oxygen content is frequently described as being determined in accordance with a
particular standardized method whereas, in actual fact, only the calibration factor is taken from the
standard while the measurement itself is made by whatever method is employed within the
instrumentation used.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 1188–02
1. Scope 1.6 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
1.1 This test method covers the determination of the inter-
responsibility of the user of this standard to establish appro-
stitial oxygen content of single crystal silicon by measurement
priate safety and health practices and determine the applica-
of an infra
...

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