ASTM F1894-98(2011)

Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness (Withdrawn 2020)

SIGNIFICANCE AND USE
This test method can be used to ensure absolute reproducibility of WSix film deposition systems over the course of many months. The time span of measurements is essentially the life of many process deposition systems.
This test method can be used to qualify new WSix  deposition systems to ensure duplicability of existing systems. This test method is essential for the coordination of global semiconductor fabrication operations using different analytical services. This test method allows samples from various deposition systems to be analyzed at different sites and times.
This test method is the chosen calibration technique for a variety of analytical techniques, including, but not limited to:
Electron spectroscopy for chemical analysis (ESCA or XPS),
Auger electron spectroscopy (AES),
Fourier transform infrared red spectroscopy (FTIR),
Secondary ion mass spectrometry (SIMS), and
Electron dispersive spectrometry (EDS) and particle induced x-ray emission (PIXE).
SCOPE
1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSix) semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus Å (31 atomic mass units (amu) to antimony (122 amu).
1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (∼2.5 mm).
1.3 This test method accurately measures the following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSix film thickness, argon concentrations (if present), presence of oxide on surface of WSix films, and transition metal impurities to detection limits of 1×1014 atoms/cm2.
1.4 This test method can detect absolute differences in silicon and tungsten concentrations of ±3 and ±1 atomic percent, respectively, measured from different samples in separate analyses. Relative variations in the tungsten concentration in depth can be detected to ±0.2 atomic percent with a depth resolution of ±70Å.
1.5 This test method supports and assists in qualifying WSix films by electrical resistivity techniques.
1.6 This test method can be performed for WSix films deposited on conducting or insulating substrates.
1.7 This test method is useful for WSix  films between 20 and 400 nm with an areal coverage of greater than 1 by 1 mm2.
1.8 This test method is non-destructive to the film to the extent of sputtering.
1.9 A statistical process control (SPC) of WSix  films has been monitored since 1993 with reproducibility to ±4 %.
1.10 This test method produces accurate film thicknesses by modeling the film density of the WSix  film as WSi2  (hexagonal) plus excess elemental Si2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10 % compared to SEM cross-section measurements (see 13.4).
1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities.
1.12 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.13 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.  The reader is referenced to Section 8 of this test method for references to some of the regulatory, radiation, and safety considerations involved with accelerator operation.
WITHD...

General Information

• Status: Withdrawn
• Publication Date: 31-May-2011
• Withdrawal Date: 09-Jan-2020
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.17 - Sputter Metallization

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F1894 − 98 (Reapproved 2011)
Test Method for
Quantifying Tungsten Silicide Semiconductor Process Films
1
for Composition and Thickness
This standard is issued under the fixed designation F1894; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 1.9 A statistical process control (SPC) of WSi films has
x
been monitored since 1993 with reproducibility to 64%.
1.1 This test method covers the quantitative determination
of tungsten and silicon concentrations in tungsten/silicon
1.10 Thistestmethodproducesaccuratefilmthicknessesby
(WSi ) semiconductor process films using Rutherford Back-
x modelingthefilmdensityoftheWSi filmasWSi (hexagonal)
x 2
2
2
scattering Spectrometry (RBS). (1) This test method also
plus excess elemental Si . The measured film thickness is a
covers the detection and quantification of impurities in the
lower limit to the actual film thickness with an accuracy less
massrangefromphosphorusÅ(31atomicmassunits(amu)to
than 10% compared to SEM cross-section measurements (see
antimony (122 amu).
13.4).
1.2 This test method can be used for tungsten silicide films
1.11 Thistestmethodcanbeusedtoanalyzefilmsonwhole
prepared by any deposition or annealing processes, or both.
wafers up to 300 mm without breaking the wafers. The sites
Thefilmmustbeauniformfilmwithanarealcoveragegreater
that can be analyzed may be restricted to concentric rings near
than the incident ion beam (;2.5 mm).
the wafer edges for 200-mm and 300-mm wafers, depending
1.3 Thistestmethodaccuratelymeasuresthefollowingfilm
on system capabilities.
properties: silicon/tungsten ratio and variations with depth,
1.12 The values stated in SI units are to be regarded as
tungsten depth profile throughout film, WSi film thickness,
x
standard. No other units of measurement are included in this
argon concentrations (if present), presence of oxide on surface
standard.
of WSi films, and transition metal impurities to detection
x
14 2
limits of 1×10 atoms/cm .
1.13 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
1.4 This test method can detect absolute differences in
responsibility of the user of this standard to establish appro-
silicon and tungsten concentrations of 63 and 61 atomic
priate safety and health practices and determine the applica-
percent, respectively, measured from different samples in
bility of regulatory limitations prior to use. The reader is
separate analyses. Relative variations in the tungsten concen-
referenced to Section 8 of this test method for references to
tration in depth can be detected to 60.2 atomic percent with a
some of the regulatory, radiation, and safety considerations
depth resolution of 670Å.
involved with accelerator operation.
1.5 ThistestmethodsupportsandassistsinqualifyingWSi
x
films by electrical resistivity techniques.
2. Referenced Documents
1.6 This test method can be performed for WSi films
x
2.1 Terminology used in this document is consistent with
deposited on conducting or insulating substrates.
terms and definitions as used in the Compilation of ASTM
th
1.7 ThistestmethodisusefulforWSi filmsbetween20and
x Standard Definitions,8 ed ASTM, 1994, Philadelphia PA,
2
400 nm with an areal coverage of greater than 1 by 1 mm .
USA, specifically for terms taken from the following ASTM
standards:
1.8 This test method is non-destructive to the film to the
extent of sputtering. 3
2.2 ASTM Standards:
E135Terminology Relating to Analytical Chemistry for
Metals, Ores, and Related Materials
1
ThistestmethodisunderthejurisdictionofCommitteeF01onElectronics,and
is the direct responsibility of Subcommittee F01.17 on Sputter Metallization.
Current edition approved June 1, 2011. Published June 2011. Originally
3
approved in 1998. Last previous edition approved in 2003 as F1894–98 (03). DOI: For referenced ASTM standards, visit the ASTM website, www.astm.org, or
10.1520/F1894-98R11. contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
2
The boldface numbers in parentheses refer to a list of references at the end of Standards volume information, refer to the standard’s Document Summary page on
the text. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
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F1894 − 98 (2011)
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