ASTM F980-16
(Guide)Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
SIGNIFICANCE AND USE
5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of survivability) of components to be used in them. A determination of hardness is often necessary for the short term (≈100 μs) as well as long term (permanent damage) following exposure. See Practice E722.
SCOPE
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: F980 − 16
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
1
Displacement Damage in Silicon Semiconductor Devices
This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of original
adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A superscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 2. Referenced Documents
3
2.1 ASTM Standards:
1.1 This guide defines the requirements and procedures for
E264 Test Method for Measuring Fast-Neutron Reaction
testing silicon discrete semiconductor devices and integrated
Rates by Radioactivation of Nickel
circuits for rapid-annealing effects from displacement damage
E265 Test Method for Measuring Reaction Rates and Fast-
resulting from neutron radiation. This test will produce degra-
Neutron Fluences by Radioactivation of Sulfur-32
dation of the electrical properties of the irradiated devices and
E666 Practice for Calculating Absorbed Dose From Gamma
should be considered a destructive test. Rapid annealing of
or X Radiation
displacement damage is usually associated with bipolar tech-
E720 Guide for Selection and Use of Neutron Sensors for
nologies.
Determining Neutron Spectra Employed in Radiation-
1.1.1 Heavy ion beams can also be used to characterize
2
Hardness Testing of Electronics
displacement damage annealing (1) , but ion beams have
E721 Guide for Determining Neutron Energy Spectra from
significant complications in the interpretation of the resulting
Neutron Sensors for Radiation-Hardness Testing of Elec-
device behavior due to the associated ionizing dose. The use of
tronics
pulsed ion beams as a source of displacement damage is not
E722 Practice for Characterizing Neutron Fluence Spectra in
within the scope of this standard.
Terms of an Equivalent Monoenergetic Neutron Fluence
1.2 The values stated in SI units are to be regarded as
for Radiation-Hardness Testing of Electronics
standard. No other units of measurement are included in this
E1854 Practice for Ensuring Test Consistency in Neutron-
standard.
Induced Displacement Damage of Electronic Parts
1.3 This standard does not purport to address all of the E1855 Test Method for Use of 2N2222A Silicon Bipolar
Transistors as Neutron Spectrum Sensors and Displace-
safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro- ment Damage Monitors
E1894 Guide for Selecting Dosimetry Systems for Applica-
priate safety, health, and environmental practices and deter-
mine the applicability of regulatory limitations prior to use. tion in Pulsed X-Ray Sources
1.4 This international standard was developed in accor-
3. Terminology
dance with internationally recognized principles on standard-
3.1 Definitions of Terms Specific to This Standard:
ization established in the Decision on Principles for the
3.1.1 Β—gain also known as the common emitter gain. The
Development of International Standards, Guides and Recom-
ratio of the collector current over the base current at a constant
mendations issued by the World Trade Organization Technical
V .
Barriers to Trade (TBT) Committee.
CE
3.1.2 annealing function—the ratio of the change in the
displacement damage metric (as manifested in device paramet-
1
ric measurements) as a function of time following a pulse of
This guide is under the jurisdiction of ASTM Committee E10 on Nuclear
Technology and Applications and is the direct responsibility of Subcommittee neutrons to the change in the residual late-time displacement
E10.07 on Nuclear and Space Radiation Effects.
Current edition approved Dec. 1, 2016. Published January 2017. Originally
ɛ1 3
approved in 1986. Last previous edition approved in 2010 as F980M – 10 . DOI: For referenced ASTM standards, visit the ASTM website, www.astm.org, or
10.1520/F0980-16. contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
2
The boldface numbers in parentheses refer to the list of references at the end of Standards volume information, refer to the standard’s Document Summary page on
this standard. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
F980 − 16
damage metric remaining at the time the imparted damage 3.1.4 in situ tests—electrical measurements made on de-
achieves quasi-equilibrium. vices before, after, or during irradiation while they remain in
3.1.2.1 Discussion—This late-time quasi-e
...
This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
´1
Designation: F980 − 10 F980 − 16
Standard Guide for
Measurement of Rapid Annealing of Neutron-Induced
1
Displacement Damage in Silicon Semiconductor Devices
This standard is issued under the fixed designation F980; the number immediately following the designation indicates the year of original
adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A superscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1
ε NOTE—Figure 2 was corrected editorially in October 2014.
1. Scope
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits
for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the
electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage
is usually associated with bipolar technologies.
2
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1) , but ion beams have significant
complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams
as a source of displacement damage is not within the scope of this standard.
1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of
regulatory limitations prior to use.
2. Referenced Documents
3
2.1 ASTM Standards:
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E1854 Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
E1855 Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage
Monitors
E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
F1032 Guide for Measuring Time-Dependent Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing
4
Radiation (Withdrawn 1994)
3. Terminology
3.1 Definitions of Terms Specific to This Standard:
3.1.1 Β—gain also known as the common emitter gain. The ratio of the collector current over the base current at a constant V .
CE
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation
Effects.
Current edition approved Dec. 1, 2010Dec. 1, 2016. Published January 2011January 2017. Originally approved in 1986. Last previous edition approved in 20032010 as
ɛ1
F980M – 96F980M – 10 (2003). DOI: 10.1520/F0980-10E01.10.1520/F0980-16.
2
The boldface numbers in parentheses refer to the list of references at the end of this standard.
3
For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
F980 − 16
3.1.2 annealing function—the ratio of the change in the displacement damage metric (as manifested in device parametric
measurements) as a function of time following a pulse of neutrons andto the change in the residual late-time displacement damage
metric remaining at the time the initialimparted damage achieves quasi equilibrium. quasi-equilibrium.
3.1.2.1 Discussion—
This late-time quasi-equilibrium time is sometimes set to a fixed time on the order of
...
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