ASTM F1239-02

Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles.
1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers.
1.3 These test methods may be applied to any - or -type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss.
1.4 These test methods are not suitable for determining the width or characteristics of a "denuded zone," a region near the surface of a wafer that is essentially free of oxide precipitates.
1.5 Because these test methods are destructive, suitable sampling techniques must be employed.
1.6 The values stated in SI units are regarded as standard.
1.7  This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.  Specific hazard statements are given in Section 8.

General Information

• Status: Withdrawn
• Publication Date: 09-Jan-2002
• Withdrawal Date: 11-Aug-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F1239-94 - Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1239 – 02
Standard Test Method for
Oxygen Precipitation Characteristics of Silicon Wafers by
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Measurement of Interstitial Oxygen Reduction
This standard is issued under the fixed designation F 1239; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope F 951 Test Method for Determination of Radial Interstitial
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Oxygen Variation Silicon Wafers
1.1 These test methods cover complementary procedures for
F 1188 Test Method for Interstitial Atomic Oxygen Content
testing the oxygen precipitation characteristics of silicon wa-
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of Silicon by Infrared Absorption
fers. It is assumed that the precipitation characteristics are
2.2 SEMI Standards:
related to the amount of interstitial oxygen lost during specified
C 3.15 Standard for Nitrogen (N ) in Cylinders, 99.992 %
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thermal cycles.
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Quality
1.2 These test methods may be used to compare qualita-
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C 3.22 Standard for Oxygen (O ), 99.5 % Quality
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tively the precipitation characteristics of two or more groups of
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C 28 Specifications and Guidelines for Hydrofluoric Acid
wafers.
2.3 DIN Standard:
1.3 These test methods may be applied to any n-or p-type,
DIN 50 438, Part 1 Testing of Materials for Semiconductor
any orientation Czochralski silicon wafers whose thickness,
Technology Determination of Impurity Content in Semi-
resistivity, and surface finish are such as to permit the oxygen
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conductors by Infrared Absorption Oxygen in Silicon
concentration to be determined by infrared absorption and
2.4 JEIDA Standard:
whose oxygen concentration is such as to produce measurable
JEIDA 61 Standard Test Method for Interstitial Atomic
oxygen loss.
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Oxygen Content of Silicon by Infrared Absorption
1.4 These test methods are not suitable for determining the
width or characteristics of a “denuded zone,’’ a region near the
3. Summary of Test Method
surface of a wafer that is essentially free of oxide precipitates.
3.1 A representative sample is selected from each group of
1.5 Because these test methods are destructive, suitable
wafers to be tested.
sampling techniques must be employed.
3.2 The initial value of interstitial oxygen concentration is
1.6 The values stated in SI units are regarded as standard.
measured by the infrared absorption method at the desired
1.7 This standard does not purport to address all of the
points on each wafer.
safety concerns, if any, associated with its use. It is the
3.3 The wafers are passed through one of two simulation
responsibility of the user of this standard to establish appro-
thermal cycles. Cycle A consists solely of a precipitation step.
priate safety and health practices and determine the applica-
Cycle B consists of a nucleation step followed by a precipita-
bility of regulatory limitations prior to use. Specific hazard
tion step.
statements are given in Section 8.
3.4 After the thermal cycle, the oxide film is stripped and
2. Referenced Documents the final value of oxygen concentration is measured at the same
points on each wafer using the same technique and instrumen-
2.1 ASTM Standards:
tation as was used to determine the initial value.
D 5127 Guide for Ultra Pure Water Used in the Electronics
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3.5 The oxygen reduction is determined for each wafer (or
and Semiconductor Industry
for each point on each wafer) tested as the difference between
F 1619 Test Method for Measurement of Interstitial Oxygen
the initial and final values.
Content of Silicon Wafers by Infrared Absorption Spec-
3.6 If all samples have the same initial oxygen concentra-
troscopy with p-Polarized Radiation Incident at the Brew-
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tion (within a narrow range), the average oxygen reduction for
ster Angle
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These test methods are under the jurisdiction of ASTM Committee F01 on Available from Semiconductor Equipment and Materials International, 3081
Electronics and are the direct responsibility of Subcommittee F01.06 on Silicon Zanker Road, San Jose, CA 95134 (www.semi.org).
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Materials and Process Control. Deutsches Institut für Normung e.V. (www.din.de), print copy available from
Current edition approved Jan. 10, 2002. Published March 2002. Originally Beuth Verlag GmbH. Burggrafenstrasse 4-10, D-1000 Berlin 30, Germany.
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published as F 1239 – 89. Last previous edition F 1239 – 94. Available from Japan Electronics and Information Technology Industries
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Annual Book of ASTM Standards, Vol 11.01. Association, 3rd floor, Mitsui Kaijo Bldg., Annex 11, Kanda, Surugadai 3–chome,
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Annual Book of ASTM Standards, Vol 10.05. Chiyoda-ku, Tokyo 101-0062 Japan.
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