ASTM F744M-97(2003)

Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits [Metric]

SCOPE
1.1 This test method covers the measurement of the threshold level of radiation dose rate that causes upset in digital integrated circuits under static operating conditions. The radiation source is either a flash X-ray machine (FXR) or an electron linear accelerator (LINAC).
1.2 The precision of the measurement depends on the homogeneity of the radiation field and on the precision of the radiation dosimetry and the recording instrumentation.
1.3 The test may be destructive either for further tests or for purposes other than this test if the integrated circuit being tested absorbs a total radiation dose exceeding some predetermined level. Because this level depends both on the kind of integrated circuit and on the application, a specific value must be agreed upon by the parties to the test (6.8).
1.4 Setup, calibration, and test circuit evaluation procedures are included in this test method.
1.5 Procedures for lot qualification and sampling are not included in this test method.
1.6 Because of the variability of the response of different device types, the initial dose rate for any specific test is not given in this test method but must be agreed upon by the parties to the test.
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 09-Feb-1997
• ICS: 31.200 - Integrated circuits. Microelectronics
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F744M-97 - Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits
• Effective Date: 10-Feb-1997
• Replaced By: ASTM F744M-10 - Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits [Metric]
• Effective Date: 01-May-2010

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information.
Designation:F744M–97 (Reapproved 2003)
Standard Test Method for
Measuring Dose Rate Threshold for Upset of Digital
Integrated Circuits (Metric)
This standard is issued under the fixed designation F744M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope E665 Practice for Determining Absorbed Dose Versus
Depth in Materials Exposed to the X-Ray Output of Flash
1.1 This test method covers the measurement of the thresh-
X-Ray Machines
old level of radiation dose rate that causes upset in digital
E666 PracticeforCalculatingAbsorbedDoseFromGamma
integratedcircuitsunderstaticoperatingconditions.Theradia-
or X Radiation
tionsourceiseitheraflashX-raymachine(FXR)oranelectron
E668 Practice for Application of Thermoluminescence-
linear accelerator (LINAC).
Dosimetry(TLD)SystemsforDeterminingAbsorbedDose
1.2 The precision of the measurement depends on the
in Radiation-Hardness Testing of Electronic Devices
homogeneity of the radiation field and on the precision of the
F526 Test Method for Measuring Dose for Use in Linear
radiation dosimetry and the recording instrumentation.
Accelerator Pulsed Radiation Effects Tests
1.3 Thetestmaybedestructiveeitherforfurthertestsorfor
purposes other than this test if the integrated circuit being
3. Terminology
tested absorbs a total radiation dose exceeding some predeter-
3.1 Definitions of Terms Specific to This Standard:
mined level. Because this level depends both on the kind of
3.1.1 determined integrated circuit—integrated circuit
integrated circuit and on the application, a specific value must
whose output is a unique function of the inputs; the output
be agreed upon by the parties to the test (6.8).
changes if and only if the input changes (for example, AND-
1.4 Setup,calibration,andtestcircuitevaluationprocedures
and OR-gates).
are included in this test method.
3.1.2 dose rate—energy absorbed per unit time and per unit
1.5 Procedures for lot qualification and sampling are not
mass by a given material from the radiation to which it is
included in this test method.
exposed.
1.6 Because of the variability of the response of different
3.1.3 doseratethresholdforupset—minimumdoseratethat
device types, the initial dose rate for any specific test is not
causes either: (1) the instantaneous output voltage of an
giveninthistestmethodbutmustbeagreeduponbytheparties
operating digital integrated circuit to be greater than the
to the test.
specified maximum LOW value (for a LOW output level) or
1.7 This standard does not purport to address all of the
less than the specified minimum HIGH value (for a HIGH
safety concerns, if any, associated with its use. It is the
output level), or (2) a change of state of any stored data.
responsibility of the user of this standard to establish appro-
3.1.4 nondetermined integrated circuit—integrated circuit
priate safety and health practices and determine the applica-
whose output or internal operating conditions are not unique
bility of regulatory limitations prior to use.
functions of the inputs (for example, flip-flops, shift registers,
2. Referenced Documents and RAMs).
2.1 ASTM Standards:
4. Summary of Test Method
4.1 Thetestdeviceandsuitabledosimetersareirradiatedby
This test method is under the jurisdiction of ASTM Committee F01 on
either an FXR or a LINAC. The test device is operating but
Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and
under static conditions. The output(s) of the test device and of
Space Radiation Effects.
the dosimeters are recorded.
Current edition approved June 10, 2003. Published June 2003. Originally
approved in 1981. Last previous edition approved in 1997 as F744M–97. DOI: 4.2 The dose rate is varied to determine the rate which
10.1520/F0744M-97R03.
results in upset of the test device.
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
Standards volume information, refer to the standard’s Document Summary page on
the ASTM website. Withdrawn.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
F744M–97 (2003)
4.3 Forthepurposesofthistestmethod,upsetisconsidered be minimized by shielding the surrounding circuitry and
to be either of the following: irradiating only the minimum area necessary to ensure irradia-
4.3.1 An output voltage transient exceeding a predeter- tion of the test device. Reasonable estimates of the magnitude
mined value, or to be expected of current resulting from secondary-emission
4.3.2 For devices having output logic levels which are not
effects can be made based on the area of metallic target
unique functions of the input logic levels, such as flip-flops, a materials irradiated (see Note 1). Values generally range
−11 −10 2
change in the logic state of an output.
between 10 and 10 A·s/cm ·Gy, but the use of a scatter
4.3.3 For nondetermined integrated circuits, a change of plate with an intense beam may increase this current (7.7.2).
state of an internal storage element or node.
NOTE 1—For dose rates in excess of 10 Gy(Si)/s, the photocurrents
4.4 Anumber of factors are not defined in this test method,
developed by the package may dominate the device photocurrent. Care
and must be agreed upon beforehand by the parties to the test:
should be taken in the interpretation of the measured photoresponse for
4.4.1 Total dose limit (see 1.3),
these high dose rates.
4.4.2 Transient values defining an upset (see 4.3.1),
6.3 Orientation—The effective dose to a semiconductor
4.4.3 Temperature at which the test is to be performed (see
junction can be altered by changing the orientation of the test
6.7),
device with respect to the irradiating beam. Most integrated
4.4.4 Details of the test circuit, including output loading,
circuits may be considered “thin samples” (in terms of the
power supply levels, and other operating conditions (see 7.4,
range of the radiation). However, some devices may have
10.3, and 10.4),
cooling studs or thick-walled cases that can act to scatter the
4.4.5 Choice of radiation pulse source (see 7.7),
incident beam, thereby modifying the dose received by the
4.4.6 Radiation pulse width (see 7.7.2),
semiconductor chip. Care must be taken in the positioning of
4.4.7 Sampling (see 8.1),
such devices.
4.4.8 Need for total dose measurement (see 6.8, 7.6, and
10.1), 6.4 Dose Enhancement—High atomic number materials
4.4.9 Desired precision of the upset threshold (see 10.8),
near the active regions of the integrated circuit (package,
and metallization, die attach materials, etc.) can cause an enhanced
4.4.10 Initial dose rate (see 1.6 and 10.5).
dosetobedeliveredtothesensitiveregionsofthedevicewhen
itisirradiatedwithbremsstrahlung.Therefore,whenanFXRis
5. Significance and Use
used as the radiation source, calculations should be performed
5.1 Digital integrated circuits are specified to operate with to determine the possibility and extent of this effect.
theirinputsandoutputsineitheralogical1oralogical0state.
6.5 Electrical Noise—Since radiation test facilities are in-
The occurrence of signals having voltage levels not meeting
herent sources of r-f electrical noise, good noise-minimizing
the specifications of either of these levels (an upset condition)
techniques such as single-point ground, filtered d-c supply
may cause the generation and propagation of erroneous data in
lines, etc., must be used in these measurements.
a digital system.
6.6 Temperature—Device characteristics are dependent on
5.2 Knowledge of the radiation dose rate that causes upset
junction temperature; hence, the temperature of the test should
in digital integrated circuits is essential for the design, produc-
be controlled. Unless the parties to the test agree otherwise,
tion,andmaintenanceofelectronicsystemsthatarerequiredto
measurements shall be made at room temperature (23 6 5°C).
operate in the presence of pulsed radiation environments.
6.7 Beam Homogeneity and Pulse-to-Pulse Repeatability—
The intensity of a beam from an FXR or a LINAC is likely to
6. Interferences
vary across its cross section. Since the pulse-shape monitor is
6.1 Air Ionization—A spurious component of the signal
placed at a different location than the device under test, the
measured during a test can result from conduction through air
measured dose rate may be different from the dose rate to
ionized by the radiation pulse. The source of such spurious
which the device was exposed. The spatial distribution and
contributions can be checked by measuring the signal while
intensity of the beam may also vary from pulse to pulse. The
irradiating the test fixture in the absence of a test device. Air
beam homogeneity and pulse-to-pulse repeatability associated
ionization contributions to the observed signal are generally
with a particular radiation source should be established by a
proportional to the applied field, while those due to secondary
thorough characterization of its beam prior to performing a
emission effects (6.2) are not. The effects of air ionization
measurement.
external to the device may be minimized by coating exposed
6.8 Total Dose—Each pulse of the radiation source imparts
leads with a thick layer of paraffin, silicone rubber, or noncon-
a dose to both the device under test and the device used for
ductive enamel or by making the measurement in a vacuum.
dosimetry. The total dose deposited in a semiconductor device
6.2 Secondary Emission —Another spurious component of
can change its operating characteristics. As a result, the
the measured signal can result from charge emission from, or
response that is measured after several pulses may be different
charge injection into, the test device and test circuit. This may
from that characteristic of an unirradiated device. Care should
be exercised to ensure that the total dose delivered to the test
deviceislessthantheagreed-uponmaximumvalue.Caremust
Sawyer, J.A., and van Lint, V.A. J., “Calculations of High-Energy Secondary
also be taken to ensure that the characteristics of the dosimeter
Electron Emission,” Journal of Applied Physics, Vol 35, No. 6, June 1964, pp.
1706–1711. have not changed due to the accumulated dose.
F744M–97 (2003)
7. Apparatus groundingconnectionsprovidesthatonlyonegroundexists,at
the point of measurement. This eliminates the possibility of
7.1 Regulated d-c Power Supplies, with floating outputs to
groundloopsandreducesthecommon-modesignalspresentat
produce the voltages required to bias the integrated circuit
theterminalsofthemeasurementinstruments.Theresistor, R ,
under test.
is the termination for the coaxial cable and has a value within
7.2 Recording Devices—Asingle dual-beam, or two single-
2%ofthecharacteristiccableimpedance.Allunusedinputsto
beam oscilloscopes, equipped with cameras; or transient digi-
the test device are connected as agreed upon between the
tizers with appropriate displays. The bandwidth capabilities of
parties to the test.The output of the test device may be loaded,
therecordingdevicesshallbesuchthattheradiationresponses
as agreed upon between the parties to the test. To prevent
of the integrated circuit and the pulse-shape monitor (7.6) are
loading of the output of the test device by the coaxial cable,
accurately displayed and recorded.
one may use a line driver that has a high input impedance and
7.3 Cabling, to complete adequately the connection of the
adequatebandwidthandvoltageswingtoreproduceaccurately
test circuit in the exposure area with the power supply and
attheoutputendofthecoaxialcable,thewaveformsappearing
oscilloscopes in the data area. Shielded twisted pair or coaxial
at the line-driver input.
cables may be used to connect the power supplies to the bias
7.5 Radiation Pulse-Shape Monitor—Use one of the fol-
points of the test circuit; however, coaxial cables properly
lowing to develop a signal proportional to the dose rate
terminated at the oscilloscope input are required for the signal
delivered to the test device:
leads.
7.5.1 Fast Signal Diode, in the circuit configuration of Fig.
7.4 Test Circuit (see Fig. 1)—Although the details of test
2.Theresistors,R ,serveashigh-frequencyisolationandmust
circuits for this test must vary depending on the kind of
be at least 20 V. The capacitor, C, supplies the charge during
integrated circuit to be tested and on the specific parameters of
the current transient; its value must be large enough that the
the circuit which are to be measured, Fig. 1 provides the
decrease in voltage during a current pulse is less than 10%.
information necessary for the design of a test circuit for most
The capacitor, C, should be paralleled by a small (approxi-
purposes.Thecapacitor,C,providesaninstantaneoussourceof
mately 0.01 µF) low-inductance capacitor to ensure that
current as may be required by the integrated circuit during the
possible inductive effects of the large capacitor are offset. The
radiation pulse. Its value must be large enough that the
resistor, R ,istoprovidethepropertermination(within 62%)
decreaseinthesupplyvoltageduringapulseislessthan10%.
for the coaxial cable used for the signal lead. This is the
The capacitor, C, should be paralleled by a small (approxi-
preferred apparatus for this purpose.
mately 0.01 µF) low-inductance capacitor to ensure that
7.5.2 P-I-N Diode, in the circuit configuration of Fig. 2 as
possibleinductiveeffectsofthelargecapacitorareoffset.Both
described in 7.5.1. Care should be taken to avoid saturation
capacitors must be located as close to the integrated circuit
effects.
socket as possible, consistent with the space needed for
connectionofthecurrenttransformerandforanyshieldingthat 7.5.3 Current Transformer, mounted on a collimator at the
may be necessary. The switch, S, provides means to place the output window of the linear accelerator so that the primary
output of the integrated circuit (here a NAND gate) in either a electron beam passes through the opening of the transformer
logic LOW or a logic HIGH state. The arrangement of the after passing through the collimator. The current transformer
FIG. 1 Test Circuit Example for a NAND Gate
F744M–97 (2003)
FIG. 2 Irradiation Pulse-Shape Monitor Circuit for Diodes
must have a bandwidth sufficient to ensure that the current 7.7.1 Flash X-Ray Machine (FXR), used in the photon
signalisaccuratelydisplayed.Risetimemustbelessthan10% mode and capable of delivering a
...