ASTM F951-02

Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.
1.2 This test method is intended as both a referee and production test through selection of an appropriate test position plan.
1.3 The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test.
Note 1—Test Method F 1366 is not based on infrared absorption measurement and it measures total oxygen content, not interstitial oxygen content. It is also a destructive technique. However, it can be used to determine the radial variation of the oxygen content if suitable modifications of the test procedure are made.
1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Withdrawn
• Publication Date: 09-Jan-2002
• Withdrawal Date: 11-Aug-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F951-01 - Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 951 – 02
Standard Test Method for
Determination of Radial Interstitial Oxygen Variation in
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Silicon Wafers
This standard is issued under the fixed designation F 951; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope F 1188 Test Method for Interstitial Atomic Oxygen Content
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of Silicon by Infrared Absorption
1.1 This test method covers test site selection and data
F 1366 Test Method for Measuring Oxygen Concentration
reduction procedures for radial variation of the interstitial
in Heavily Doped Silicon Substrates by Secondary Ion
oxygen concentration in silicon slices typically used in the
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Mass Spectrometry
manufacture of microelectronic semiconductor devices.
F 1619 Test Method for Measurement of Interstitial Oxygen
1.2 This test method is intended as both a referee and
Content of Silicon Wafers by Infrared Absorption Spec-
production test through selection of an appropriate test position
troscopy with p-Polarized Radiation Incident at the Brew-
plan.
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ster Angle
1.3 The interstitial oxygen content may be measured in
2.2 DIN Standard:
accordance with Test Methods F 1188 or F 1619, DIN 50438/1,
DIN 50438/1 Test of Materials for Semiconductor Technol-
JEIDA 61, or any other procedure agreed upon by the parties to
ogy; Determination of Impurity Content in Silicon by
the test.
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Infrared Absorption; Oxygen
NOTE 1—Test Method F 1366 is not based on infrared absorption
2.3 JEIDA Standard:
measurement and it measures total oxygen content, not interstitial oxygen
JEIDA 61 Standard Test Method for Interstitial Atomic
content. It is also a destructive technique. However, it can be used to
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Oxygen Content of Silicon by Infrared Absorption
determine the radial variation of the oxygen content if suitable modifica-
2.4 ANSI Standard:
tions of the test procedure are made.
ANSI/ASQC Z1.4-1993, Sampling Procedures and Tables
1.4 Acceptable thickness and surface finish for the test
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for Inspection by Attributes
specimens are specified in the applicable test methods. This
test method is suitable for use on chemically etched, single-
3. Summary of Test Method
side polished and double-side polished silicon wafers or slices
3.1 Instruments are selected and qualified according to the
with no surface defects that could adversely change infrared
test procedure chosen.
radiation transmission through the test specimen (subsequently
3.2 Measurements are made at the specified test locations
called slice), provided that appropriate test methods for oxygen
and a relative oxygen variation is calculated by one of four
content are selected.
available plans.
1.5 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
4. Significance and Use
responsibility of the user of this standard to establish appro-
4.1 The presence of oxygen can be beneficial to certain
priate safety and health practices and determine the applica-
manufacturing operations by preventing the formation of
bility of regulatory limitations prior to use.
process-induced defects. To the extent that this is true, it
becomes important that the oxygen be uniformly distributed
2. Referenced Documents
over the entire slice.
2.1 ASTM Standards:
F 533 Test Method for Thickness and Thickness Variation
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2
DIN 50438/1 is the responsibility of DIN Committee NMP 221, with which
of Silicon Wafers
ASTM F01 maintains close liason. DIN 50438/1 is available from Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-1000, Berlin 30, Germany.
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JEIDA 61 is the responsibility of the JEITA Silicon Wafer Committee, with
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This test method is under the jurisdiction of ASTM Committee F01 on which ASTM F01 maintains close liason. JEIDA 61 is available from the Japan
Electronics and is the direct responsibility of Subcommittee F01.06 on Silicon Electronics and Information Technology Industries Association, 3rd Floor Mitsui
Materials and Process Control. Kaijo Bldg. Annex 11, Kanda Surugadai 3–chome, Chiyoda-ku, Tokyo 101–0062,
Current edition approved Jan. 10, 2002. Published March 2002. Originally Japan.
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published as F 951 – 85. Last previous edition F 951 – 01. Available from American National Standards Institute, 1819 L Street N.W.,
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Annual Book of ASTM Standards, Vol 10.05. Washington, DC 20036.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for t
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