ASTM F1393-02

Standard Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements With a Mercury Probe (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 x 10 13 to about 8 x 1016 carriers/cm (resistivity range from about 0.1 to about 100 Ω-cm in n-type wafers and from about 0.24 to about 330 Ω-cm in p-type wafers).
1.2 This test method requires the formation of a Schottky barrier diode with a mercury probe contact to an epitaxial or polished wafer surface. Chemical treatment of the silicon surface may be required to produce a reliable Schottky barrier diode. (1) The surface treatment chemistries are different for n- and p-type wafers. This test method is sometimes considered destructive due to the possibility of contamination from the Schottky contact formed on the wafer surface; however, repetitive measurements may be made on the same test specimen.
1.3 This test method may be applied to epitaxial layers on the same or opposite conductivity type substrate. This test method includes descriptions of fixtures for measuring substrates with or without an insulating backseal layer.
1.4 The depth of the region that can be profiled depends on the doping level in the test specimen. Based on data reported by Severin (1) and Grove (2), shows the relationship between depletion depth, dopant density, and applied voltage together with the breakdown voltage of a mercury silicon contact. The test specimen can be profiled from approximately the depletion depth corresponding to an applied voltage of 1 V to the depletion depth corresponding to the maximum applied voltage (200 V or about 80 % of the breakdown voltage, whichever is lower). To be measured by this test method, a layer must be thicker than the depletion depth corresponding to an applied voltage of 2 V.
1.5 This test method is intended for rapid carrier density determination when extended sample preparation time or high temperature processing of the wafer is not practical.
1.6 This test method provides for determining the effective area of the mercury probe contact using polished bulk reference wafers that have been measured for resistivity at 23°C in accordance with Test Method F 84 or Test Method F 673. This test method also includes procedures for calibration of the apparatus. An alternative method of determining the effective area of the mercury probe contact that involves the use of reference wafers whose net carrier density has been measured using fabricated mesa or planar  p-n junction diodes or evaporated Schottky diodes is not included in this test method but may be used if agreed upon by the parties to the test.
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 6.3, 7.2, 7.3, and 8.2.

General Information

• Status: Withdrawn
• Publication Date: 09-Dec-2002
• Withdrawal Date: 09-May-2003
• ICS: 29.045 - Semiconducting materials
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F1393-92(1997) - Standard Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements With a Mercury Probe
• Effective Date: 10-Dec-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1393 – 02
Standard Test Method for
Determining Net Carrier Density in Silicon Wafers by Miller
1
Feedback Profiler Measurements With a Mercury Probe
This standard is issued under the fixed designation F 1393; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope layer must be thicker than the depletion depth corresponding to
2
an applied voltage of 2 V.
1.1 This test method covers the measurement of net carrier
1.5 This test method is intended for rapid carrier density
density and net carrier density profiles in epitaxial and polished
13
determination when extended sample preparation time or high
bulk silicon wafers in the range from about 4 3 10 to about
16
temperature processing of the wafer is not practical.
8 3 10 carriers/cm (resistivity range from about 0.1 to about
1.6 This test method provides for determining the effective
100 V-cm in n-type wafers and from about 0.24 to about 330
area of the mercury probe contact using polished bulk refer-
V-cm in p-type wafers).
ence wafers that have been measured for resistivity at 23°C in
1.2 This test method requires the formation of a Schottky
accordance with Test Method F 84 or Test Method F 673. This
barrier diode with a mercury probe contact to an epitaxial or
test method also includes procedures for calibration of the
polished wafer surface. Chemical treatment of the silicon
apparatus.
surface may be required to produce a reliable Schottky barrier
3
diode. (1) The surface treatment chemistries are different for
NOTE 1—An alternative method of determining the effective area of the
n- and p-type wafers. This test method is sometimes considered mercury probe contact that involves the use of reference wafers whose net
carrier density has been measured using fabricated mesa or planar p-n
destructive due to the possibility of contamination from the
junction diodes or evaporated Schottky diodes is not included in this test
Schottky contact formed on the wafer surface; however,
method but may be used if agreed upon by the parties to the test.
repetitive measurements may be made on the same test
1.7 This standard does not purport to address all of the
specimen.
1.3 This test method may be applied to epitaxial layers on safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro-
the same or opposite conductivity type substrate. This test
method includes descriptions of fixtures for measuring sub- priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use. Specific hazard
strates with or without an insulating backseal layer.
1.4 The depth of the region that can be profiled depends on statements are given in 6.3, 7.2, 7.3, and 8.2.
the doping level in the test specimen. Based on data reported
2. Referenced Documents
by Severin (1) and Grove (2), Fig. 1 shows the relationship
2.1 ASTM Standards:
between depletion depth, dopant density, and applied voltage
4
D 1193 Specifications for Reagent Water
together with the breakdown voltage of a mercury silicon
D 5127 Guide for Ultra Pure Water Used in the Electronics
contact. The test specimen can be profiled from approximately
4
and Semiconductor Industry
the depletion depth corresponding to an applied voltage of 1 V
F 26 Test Methods for Determining the Orientation of a
to the depletion depth corresponding to the maximum applied
5
Semiconductive Single Crystal
voltage (200 V or about 80 % of the breakdown voltage,
F 42 Test Methods for Conductivity Type of Extrinsic
whichever is lower). To be measured by this test method, a
5
Semiconducting Materials
F 81 Test Method for Measuring Radial Resistivity Varia-
1
5
This test method is under the jurisdiction of ASTM Committee F01 on
tion on Silicon Slices
Electronics and its the direct responsibility of Subcommittee F01.06 on Silicon
F 84 Test Method for Measuring Resistivity of Silicon
Materials and Process Control.
5
Wafers with an In-Line Four-Point Probe
Current edition approved Dec. 10, 2002. Published February 2003. Originally
approved in 1992. Last previous edition approved in 1992 as F 1393 – 92 (1997).
F 673 Test Method for Measuring Resistivity of Semicon-
2
DIN 50439, Determination of the Dopant Concentration Profile of a Single
ductor Slices or Sheet Resistance of Semiconductor Films
Crystal Semiconductor Material by Means of the Capacitance-Voltage Method and
Mercury Contact, is the responsibility of DIN Committee NMP 221, with which
Committee F01 maintains close liaison. DIN 50439 is available from Beuth Verlag
GmbH, Burggrafenstra
...