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ASTM F1618-02

(Practice)

Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)

Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice covers a set of site distribution patterns for measuring the uniformity of a property of a thin film on a silicon wafer, as well as simple procedures for analyzing and reporting the results of those measurements. The purpose of this practice is to promote commonality of approach to the analysis of uniformity among all parties needing to generate or assess such information, including manufacturers of the basic test instrumentation to be used.
1.2 This practice is intended for use as a template for the evaluation of the uniformity of intrinsic film properties such as thickness or composition, and also film functional characteristics such as sheet resistance and reflectivity. The resulting information may be used to assess the uniformity of the film itself or of the layer formation process. This practice is not directly applicable to evaluating wafer-to-wafer or lot-to-lot variations.
1.3 This practice is intended for use with any thin film or layer type, or formation technique, for which basic measurement instrumentation and capability exists that is appropriate to the film parameter of interest. This practice is intended for layer growth and deposition techniques such as epitaxy, implantation, thermal and chemical vapor deposition (CVD) oxidation, and metallization, as well as for layer modification such as various means of layer etching.
1.4 This practice can be used with any measurement method, procedure or instrumentation that can measure the needed film property or characteristic with sufficient precision and spatial resolution to reveal the needed information on spatial nonuniformity of the film. This practice does not itself contain details on performing any specific measurement.
1.4.1 Not all types of measurements that may need to be used for evaluation of the uniformity of a thin film have formal procedural standards. Test Methods F 374, F 576, F 1392, F 1393, and F 1529 give details of measurement procedures that may be applied to evaluating the uniformity of thin film properties.
1.4.2 This practice does not deal with acquisition or analysis of uniformity data where it is desired to take more than one measurement per specified spatial cell such as is commonly done for wafer site flatness measurements.
1.5 This practice is written for evaluation of planar or blanket films, but it may be applied to patterned films if the pattern size, shape, and distribution do not interfere with the spatial resolution of the selected measurement technique and the specified measurement site selection. If either of these interferences occur, the user may adapt the principles of the method to the needed application, but the interpretation of the results may change.
1.6 This practice makes no recommendations regarding the interpretation of the statistics that result from analysis of the data acquired with regard to the goodness or badness of given values of the test statistic, nor does it make recommendations regarding decisions about the process cycle or equipment used to produce the thin film that was measured.
1.7 The principles of this practice may be adapted to determine the uniformity of bulk silicon wafer properties such as interstitial oxygen content and resistivity, but depending on the desired property and the chosen measurement technique, depth-dependent variations may be misinterpreted as lateral variations.
1.8 The principles of this practice may be adapted to other semiconductor wafers, such as gallium arsenide, but particular concerns with those other materials may not be addressed adequately in this practice.

General Information

Status
Withdrawn
Publication Date
09-May-2002
Withdrawal Date
09-May-2003
ICS
29.045 - Semiconducting materials
Technical Committee
F01 - Electronics
Current Stage
Ref Project

Relations

Replaces
ASTM F1618-96 - Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers
Effective Date
10-May-2002

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ASTM F1618-02 - Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)ASTM F1618-02 - Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)
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ASTM F1618-02 - Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers (Withdrawn 2003)
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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1618 – 02
Standard Practice for
Determination of Uniformity of Thin Films on Silicon
1
Wafers
This standard is issued under the fixed designation F 1618; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope of uniformity data where it is desired to take more than one
measurement per specified spatial cell such as is commonly
1.1 This practice covers a set of site distribution patterns for
done for wafer site flatness measurements.
measuring the uniformity of a property of a thin film on a
1.5 This practice is written for evaluation of planar or
silicon wafer, as well as simple procedures for analyzing and
blanket films, but it may be applied to patterned films if the
reporting the results of those measurements. The purpose of
pattern size, shape, and distribution do not interfere with the
this practice is to promote commonality of approach to the
spatial resolution of the selected measurement technique and
analysis of uniformity among all parties needing to generate or
the specified measurement site selection. If either of these
assess such information, including manufacturers of the basic
interferences occur, the user may adapt the principles of the
test instrumentation to be used.
method to the needed application, but the interpretation of the
1.2 This practice is intended for use as a template for the
results may change.
evaluation of the uniformity of intrinsic film properties such as
1.6 This practice makes no recommendations regarding the
thickness or composition, and also film functional characteris-
interpretation of the statistics that result from analysis of the
tics such as sheet resistance and reflectivity. The resulting
data acquired with regard to the goodness or badness of given
information may be used to assess the uniformity of the film
values of the test statistic, nor does it make recommendations
itself or of the layer formation process. This practice is not
regarding decisions about the process cycle or equipment used
directly applicable to evaluating wafer-to-wafer or lot-to-lot
to produce the thin film that was measured.
variations.
1.7 The principles of this practice may be adapted to
1.3 This practice is intended for use with any thin film or
determine the uniformity of bulk silicon wafer properties such
layer type, or formation technique, for which basic measure-
as interstitial oxygen content and resistivity, but depending on
ment instrumentation and capability exists that is appropriate to
the desired property and the chosen measurement technique,
the film parameter of interest. This practice is intended for
depth-dependent variations may be misinterpreted as lateral
layer growth and deposition techniques such as epitaxy, im-
variations.
plantation, thermal and chemical vapor deposition (CVD)
1.8 The principles of this practice may be adapted to other
oxidation, and metallization, as well as for layer modification
semiconductor wafers, such as gallium arsenide, but particular
such as various means of layer etching.
concerns with those other materials may not be addressed
1.4 This practice can be used with any measurement
adequately in this practice.
method, procedure or instrumentation that can measure the
needed film property or characteristic with sufficient precision
2. Referenced Documents
and spatial resolution to reveal the needed information on
2.1 ASTM Standards:
spatial nonuniformity of the film. This practice does not itself
F 81 Test Method for Measuring Radial Resistivity Varia-
contain details on performing any specific measurement.
2
tion on Silicon Wafers
1.4.1 Not all types of measurements that may need to be
F 374 Test Method for Sheet Resistance of Silicon Epi-
used for evaluation of the uniformity of a thin film have formal
taxial, Diffused, Polysilicon, and Ion-Implanted Layers
procedural standards. Test Methods F 374, F 576, F 1392,
Using an In-Line Four-Point Probe with the Single-
F 1393, and F 1529 give details of measurement procedures
2
Configuration Procedure
that may be applied to evaluating the uniformity of thin film
F 576 Test Method for Measurement of Insulator Thickness
properties.
and Refractive Index on Silicon Substrates by Ellipsom-
1.4.2 This practice does not deal with acquisition or analysis
2
etry
F 673 Test Methods for Measuring Resistivity of Semicon-
1
This practice is under the jurisdiction of ASTM Committee F01 on Electronics
ductor Slices or Sheet Resistance of Semiconductor Films
and is the direct responsibility of Subcommittee F01.06 on Silicon Materials and
Process Control.
Current edition approved May 10, 2002. Publi
...

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1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.
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1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
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1.1 This test method  covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer.  
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