Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors

SCOPE
1.1 This test method covers how 2N2222A silicon bipolar transistors can be used either as dosimetry sensors in the determination of neutron energy spectra, or as silicon 1-MeV equivalent displacement damage fluence monitors.

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Publication Date
09-Dec-1996
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ASTM E1855-96 - Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
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NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: E 1855 – 96
Standard Test Method for
Use of 2N2222A Silicon Bipolar Transistors as Neutron
1
Spectrum Sensors and Displacement Damage Monitors
This standard is issued under the fixed designation E 1855; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope E 263 Test Method for Measuring Fast-Neutron Reaction
2
Rates by Radioactivation of Iron
1.1 This test method covers how 2N2222A silicon bipolar
E 265 Test Method for Measuring Reaction Rates and
transistors can be used either as dosimetry sensors in the
2
Fast-Neutron Fluences by Radioactivation of Sulfur-32
determination of neutron energy spectra, or as silicon 1-MeV
E 720 Guide for Selection and Use of Neutron-Activation
equivalent displacement damage fluence monitors.
Foils for Determining Neutron Spectra Employed in
1.2 The neutron displacement damage is especially valuable
2
Radiation-Hardness Testing of Electronics
as a spectrum sensor in the range 0.1 to 2.0 MeV when fission
E 721 Guide for Determining Neutron Energy Spectra from
foils are not available. It has been applied in the fluence range
12 2 14 2
Neutron Sensors for Radiation-Hardness Testing of Elec-
between 2 3 10 n/cm and 1 3 10 n/cm and, in theory,
2
15 2
tronics
should be useful up to 10 n/cm . This test method details the
E 722 Practice for Characterizing Neutron Energy Fluence
steps for the acquisition and use of silicon 1-MeV equivalent
Spectra in Terms of an Equivalent Monoenergetic Neutron
fluence information (in a manner similar to the use of activa-
2
Fluence for Radiation-Hardness Testing of Electronics
tion foil data) for the determination of neutron spectra.
E 844 Guide for Sensor Set Design and Irradiation for
1.3 In addition, this sensor can provide important confirma-
2
Reactor Surveillance, E706 (IIC)
tion of neutron spectra determined with other sensors, and
E 854 Test Method for Application and Analysis of Solid
yields a direct measurement of the silicon 1-MeV fluence by
State Track Recorder (SSTR) Monitors for Reactor Sur-
the transfer technique.
2
veillance, E706 (IIIB)
1.4 This standard does not purport to address all of the
E 944 Practice for Application of Neutron Spectrum Adjust-
safety concerns, if any, associated with its use. It is the
2
ment Methods in Reactor Surveillance, (IIA)
responsibility of the user of this standard to establish appro-
priate safety and health practices and determine the applica-
3. Terminology
bility of regulatory limitations prior to use.
3.1 Symbols:
2. Referenced Documents F 5 the silicon 1-MeV equivalent fluence (see Practice
1
E 722).
2.1 The ASTM standards listed in 2.2 from Terminology
h 5 i /i where i is the collector current and i is base current,
E 170 through Test Method E 265 provide a background for FE c b c b
in a common emitter circuit.
understanding how sensors are used in radiation measurements
and general dosimetry. The rest of the standards referenced in
4. Summary of Test Method
the list discuss the choice of sensors, spectrum determinations
4.1 Gain degradation of 2N2222A silicon bipolar transistors
with sensor data, and the prediction of neutron displacement
measured in the test (simulation) environment is compared
damage in some semiconductor devices, particularly silicon.
with that measured in a reference neutron environment. The
2.2 ASTM Standards:
F in the reference environment is derived from the known
1r
E 170 Terminology Relating to Radiation Measurements
2
reference spectrum and is used to determine a measured F in
1t
and Dosimetry
3
the test environment (1,2) by the transfer technique. The r and
E 261 Practice for Determining Neutron Fluence Rate, Flu-
2
t refer to the reference and test environments respectively.
ence, and Spectra Radioactivation Techniques
4.2 The measured F may be used as a sensor response in
1t
a spectrum adjustment code in a manner similar to the use of
1
reaction foil activities to determine the spectrum (3,4).
This test method is under the jurisdiction of ASTM Committee E-10 on Nuclear
Technology and Applications and is the direct responsibility of Subcommittee
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
3
Current edition approved Dec. 10, 1996. Published February 1997. The boldface numbers in parentheses refer to a list of references at the end of
2
Annual Book of ASTM Standards, Vol 12.02. this test method.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
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E 1855
4.3 Spectra compatible with the response
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