EN 62047-2:2006

Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials

Specifies the method for tensile testing of thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. The main structural materials for MEMS, micromachines and similar devices have special features such as typical dimensions in the order of a few microns, a material fabrication by deposition, and a test piece fabrication by non-mechanical machining using etching and photolithography. This International Standard specifies the testing method, which enables a guarantee of accuracy corresponding to the special features.

Halbleiterbauelemente - Bauteile der Mikrosystemtechnik - Teil 2: Prüfverfahren zur Zugbeanspruchung bei Dünnschicht-Werkstoffen

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2: Méthode d'essai de traction des matériaux en couche mince

Cette norme internationale specifie la methode pour les essais de traction des materiaux en couche mince d fune longueur et d fune largeur inferieure a 1 mm et d fune epaisseur inferieure a 10 Êm, qui sont des materiaux structurels principaux pour les systemes microelectromecaniques (MEMS), micromachines et dispositifs analogues. Les materiaux structurels principaux pour les MEMS, les micromachines et autres dispositifs analogues comportent des caracteristiques speciales telles que des dimensions typiques de l fordre de quelques microns, une fabrication de materiau par depot, et une fabrication d feprouvettes d fessai par usinage non mecanique au moyen de la gravure et de la photolithographie. Cette norme internationale specifie la methode d fessai qui garantit une precision correspondant aux caracteristiques speciales.

Polprevodniški elementi - Mikroelektromehanski elementi - 2. del: Metoda merjenja razteznosti tankoplastnih materialov (IEC 62047-2:2006)

General Information

• Status: Published
• Publication Date: 19-Sep-2006
• Withdrawal Date: 31-Aug-2009
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/SR 47 - Semiconductor devices
• Drafting Committee: IEC/SC 47F - IEC_SC_47F
• Parallel Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 20-Sep-2006
• Completion Date: 20-Sep-2006
• Ref Project: SIST EN 62047-2:2007 - Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials

Standards Content (Sample)

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EUROPEAN STANDARD
EN 62047-2

NORME EUROPÉENNE
September 2006
EUROPÄISCHE NORM

ICS 31.080.99


English version


Semiconductor devices -
Micro-electromechanical devices
Part 2: Tensile testing method of thin film materials
(IEC 62047-2:2006)


Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques Bauteile der Mikrosystemtechnik
Partie 2: Méthode d'essai de traction Teil 2: Prüfverfahren zur
des matériaux en couche mince Zugbeanspruchung bei
(CEI 62047-2:2006) Dünnschicht-Werkstoffen
(IEC 62047-2:2006)




This European Standard was approved by CENELEC on 2006-09-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels


© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-2:2006 E

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EN 62047-2:2006 - 2 -
Foreword
The text of document 47/1865/FDIS, future edition 1 of IEC 62047-2, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62047-2 on 2006-09-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-06-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-09-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62047-2:2006 was approved by CENELEC as a European
Standard without any modification.
__________

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- 3 - EN 62047-2:2006

Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

1)
ISO 6892 - Metallic materials - Tensile testing at ambient - -
temperature




1)
Undated reference.

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NORME CEI
INTERNATIONALE
IEC



62047-2
INTERNATIONAL


Première édition
STANDARD

First edition

2006-08


Dispositifs à semiconducteurs –
Dispositifs microélectromécaniques –
Partie 2:
Méthode d'essai de traction
des matériaux en couche mince

Semiconductor devices –
Micro-electromechanical devices –
Part 2:
Tensile testing method of thin film materials

 IEC 2006 Droits de reproduction réservés  Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique,
...