SIST EN 62047-2:2007
(Main)Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials
Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials
This International Standard specifies the method for tensile testing of thin film materials with length and width under 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. The main structural materials for MEMS, micromachines and similar devices have special features such as typical dimensions in the order of a few microns, a material fabrication by deposition, and a test piece fabrication by non-mechanical machining using etching and photolithography. This International Standard specifies the testing method, which enables a guarantee of accuracy corresponding to the special features.
Halbleiterbauelemente - Bauteile der Mikrosystemtechnik -- Teil 2: Prüfverfahren zur Zugbeanspruchung bei Dünnschicht-Werkstoffen
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques -- Partie 2: Méthode d'essai de traction des matériaux en couche mince
Cette norme internationale specifie la methode pour les essais de traction des materiaux en couche mince d fune longueur et d fune largeur inferieure a 1 mm et d fune epaisseur inferieure a 10 Êm, qui sont des materiaux structurels principaux pour les systemes microelectromecaniques (MEMS), micromachines et dispositifs analogues. Les materiaux structurels principaux pour les MEMS, les micromachines et autres dispositifs analogues comportent des caracteristiques speciales telles que des dimensions typiques de l fordre de quelques microns, une fabrication de materiau par depot, et une fabrication d feprouvettes d fessai par usinage non mecanique au moyen de la gravure et de la photolithographie. Cette norme internationale specifie la methode d fessai qui garantit une precision correspondant aux caracteristiques speciales.
Polprevodniški elementi - Mikroelektromehanski elementi - 2. del: Metoda merjenja razteznosti tankoplastnih materialov (IEC 62047-2:2006)
General Information
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EUROPEAN STANDARD
EN 62047-2
NORME EUROPÉENNE
September 2006
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices
Part 2: Tensile testing method of thin film materials
(IEC 62047-2:2006)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Dispositifs microélectromécaniques Bauteile der Mikrosystemtechnik
Partie 2: Méthode d'essai de traction Teil 2: Prüfverfahren zur
des matériaux en couche mince Zugbeanspruchung bei
(CEI 62047-2:2006) Dünnschicht-Werkstoffen
(IEC 62047-2:2006)
This European Standard was approved by CENELEC on 2006-09-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,
Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-2:2006 E
---------------------- Page: 2 ----------------------
EN 62047-2:2006 - 2 -
Foreword
The text of document 47/1865/FDIS, future edition 1 of IEC 62047-2, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 62047-2 on 2006-09-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2007-06-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2009-09-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62047-2:2006 was approved by CENELEC as a European
Standard without any modification.
__________
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- 3 - EN 62047-2:2006
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
1)
ISO 6892 - Metallic materials - Tensile testing at ambient - -
temperature
1)
Undated reference.
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NORME CEI
INTERNATIONALE
IEC
62047-2
INTERNATIONAL
Première édition
STANDARD
First edition
2006-08
Dispositifs à semiconducteurs –
Dispositifs microélectromécaniques –
Partie 2:
Méthode d'essai de traction
des matériaux en couche mince
Semiconductor devices –
Micro-electromechanical devices –
Part 2:
Tensile testing method of thin film materials
IEC 2006 Droits de reproduction réservés Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
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Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
CODE PRIX
M
PRICE CODE
Commission Electrotechnique Internationale
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
Pour prix, voir catalogue en vigueur
For price, see current catalogue
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62047-2 IEC:2006 – 3 –
CONTENTS
FOREWORD.5
1 Scope.9
2 Normative references .9
3 Symbols and designations .9
4 Testing method and test apparatus.11
4.1 Method of gripping .11
4.2 Method of loading.11
4.3 Speed of testing .11
4.4 Force measurement .11
4.5 Elongation measurement.11
4.6 Stress-strain curve .13
4.7 Environment control .13
5 Test piece .13
5.1 General .13
5.2 Plane shape of test piece .13
5.3 Test piece thickness.15
5.4 Gauge mark .15
6 Test report.15
Annex A (informative) Test piece grip methods .17
Annex B (normative) Testing conditions .21
Annex C (informative) Test piece .23
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62047-2 IEC:2006 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 2: Tensile testing method of thin film materials
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
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with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
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equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-2 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1865/FDIS 47/1878/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
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62047-2 IEC:2006 – 7 –
A list of all parts of the IEC 62047 series, under the general title Semiconductor devices –
Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
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62047-2 IEC:2006 – 9 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 2: Tensile testing method of thin film materials
1 Scope
This International Standard specifies the method for tensile testing of thin film materials with
length and width under 1 mm and thickness under 10 µm, which are main structural materials
for micro-electromechanical systems (MEMS), micromachines and similar devices.
The main structural materials for MEMS, micromachines and similar devices have special
features such as typical dimensions in the order of a few microns, a material fabrication by
deposition, and a test piece fabrication by non-mechanical machining using etching and
photolithography. This International Standard specifies the testing method, which enables a
guarantee of accuracy corresponding to the special features.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
ISO 6892, Metallic materials – Tensile testing at ambient temperature
3 Symbols and designations
Symbols and corresponding designations are given in Table 1.
Table 1 – Symbols and designations of a test piece
Symbol Unit Designation
a µm Thickness of a test piece
b µm Width of the parallel length of a test piece
L µm Original gauge length
o
L µm Parallel length
c
L µm Total length of test piece
t
2
S µm Original cross-sectional area of the parallel length
o
R
µm Radius of curvature of the transition curves between the
gripped ends and the parallel length
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62047-2 IEC:2006 – 11 –
Gauge mark Grip ends
a
S
0
R
L
0
L
c
L
t
IEC 1424/06
Figure 1 – Thin film test piece
4 Testing method and test apparatus
4.1 Method of gripping
The test piece should be gripped to the test apparatus to prevent unwanted stress such as
bending and shear stress during the test.
The grip should have the following two properties:
a) fixing force is uniformly applied on the gripped end of the test piece;
b) the grips are aligned to the tensile axis of the test apparatus.
The test apparatus should have a test piece alignment mechanism to align the test piece
tensile axis to the moving direction of the test apparatus. See Annex A.
4.2 Method of loading
The tensile force should be applied along the tensile axis of the test piece to avoid the
bending stress to the test piece. The tensile axis and the moving direction should be aligned.
The following two conditions should be satisfied to prevent the generation of the bending
stress:
a) linearity of movement in the test apparatus,
b) alignment between the tensile axis of the test piece and the moving axis of the test
apparatus.
4.3 Speed of testing
The straining rate should be lower than 0,01 /s. The straining rate or the stress rate should be
constant during the test. See Clause B.1.
4.4 Force measurement
A load cell with enough resolution, which guarantees 5 % accuracy of the measured tensile
strength, shall be used for the force measurement. See Clause B.2.
4.5 Elongation measurement
The measurement method that enables to measure 0,1 % strain value shall be used.
b
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