EN 60749-4:2002

Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

Provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 4: Feuchte Wärme, konstant, Prüfung mit hochbeschleunigter Wirkung (HAST)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 4: Essai continu fortement acceléré de contrainte de chaleur humide (HAST)

Décrit un essai de contrainte de température et d'humidité fortement accéléré (HAST) qui est réalisé dans le but d'évaluer la fiabilité des dispositifs à semiconducteurs sous boîtier non hermétique dans les environnements humides.

Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749- 4:2002)

General Information

• Status: Withdrawn
• Publication Date: 12-Aug-2002
• Withdrawal Date: 30-Jun-2005
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: CLC/SR 47 - Semiconductor devices
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Parallel Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 9960 - Withdrawal effective - Withdrawal
• Start Date: 07-Apr-2020
• Completion Date: 07-Apr-2020
• Ref Project: SIST EN 60749-4:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

Relations

• Replaces: EN 60749:1999/A1:2000 - Semiconductor devices - Mechanical and climatic test methods
• Effective Date: 29-Jan-2023
• Replaced By: EN 60749-4:2017 - Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
• Effective Date: 08-Mar-2016

Standards Content (Sample)

SLOVENSKI SIST EN 60749-4:2004

STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat,
steady state, highly accelerated stress test (HAST) (IEC 60749- 4:2002)
ICS 31.080.01 Referenčna številka
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

EUROPEAN STANDARD EN 60749-4
NORME EUROPÉENNE
EUROPÄISCHE NORM August 2002
ICS 31.080.01 Partly supersedes EN 60749:1999 + A1:2000 + A2:2001
English version
Semiconductor devices –
Mechanical and climatic test methods
Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
(IEC 60749-4:2002)
Dispositifs à semiconducteurs – Halbleiterbauelemente -
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques Prüfverfahren
Partie 4: Essai continu fortement acceléré Teil 4: Feuchte Wärme, konstant, Prüfung
de contrainte de chaleur humide (HAST) mit hochbeschleunigter Wirkung (HAST)
(CEI 60749-4:2002) (IEC 60749-4:2002)
This European Standard was approved by CENELEC on 2002-07-02. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta,
Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2002 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-4:2002 E
Foreword
The text of document 47/1602/FDIS, future edition 1 of IEC 60749-4, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-4 on 2002-07-02.
This mechanical and climatic test method, as it relates to damp heat, steady state, highly accelerated
stress test (HAS), is a complete rewrite of the test contained in clause 4C, chapter 3 of EN 60749:1999.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2003-04-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2005-07-01
__________
Endorsement notice
The text of the International Standard IEC 60749-4:2002 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE IEC
60749-4
INTERNATIONAL
Première édition
STANDARD
First edition
2002-04
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 4:
Essai continu fortement accéléré
de contrainte de chaleur humide (HAST)
Semiconductor devices –
Mechanical and climatic test methods –
Part 4:
Damp heat, steady state,
highly accelerated stress test (HAST)
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microfilms, sans l'accord écrit de l'éditeur. the publisher.
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60749-4  IEC:2002 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 4: Damp heat, steady state,
highly accelerated stress test (HAST)
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-4 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1602/FDIS 47/1618/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This mechanical and climatic test method, as it relates to damp heat, steady state, highly
accelerated stress test (HAST), is a complete rewrite of the test contained in clause 4C,
chapter 3 of IEC 60749.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
The committee has decided that the contents of this publication will remain unchanged until
2007. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
The contents of the corrigendum of August 2003 have been included in this copy.

60749-4  IEC:2002 – 5 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 4: Damp heat, steady state,
highly accelerated stress test (HAST)
1 Scope
This part of IEC 60749 provides a highly accelerated temperature and humidity stress test
(HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor
devices in humid environments.
2 HAST test – General remarks
The HAST test employs severe conditions of temperature, humidity and bias which accelerate
the penetration of moisture through the external protective material (encapsulant or seal) or
along the interface between the external protective material and the metallic conductors which
pass through it. The stress usually activates the same failure mechanisms as the “85/85”
damp heat, steady state humidity test (see IEC 60749-5). As such the test method may be
selected from 85 °C/85 % RH steady-state life or from this test method. When both test
methods are performed, test results of 85 °C/85 % RH steady-state life test take priority over
HAST.
This test method shall be considered destructive.
3 Test apparatus
The test requires a pressure chamber capable of maintaining a specified temperature and
relative humidity continuously, while providing electrical connections to the devices under test
in a specified biasing configuration.
3.1 Controlled conditions
The chamber shall be capable of providing controlled conditions of pressure, temperature and
relative humidity during ramp-up to and ramp-down from the specified test conditions.
3.2 Temperature profile
A permanent record of the temperature profile for each test cycle is recommended so that the
validity of the stress can be verified.
3.3 Devices under stress
Devices under stress shall be mounted in such a way that temperature gradients are
minimized. Devices under stress shall be no closer than 3 cm from
...