EN 62047-14:2012
(Main)Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode de mesure des limites de formage des matériaux à couche métallique
La CEI 62047-14:2012 fournit les définitions et décrit les procédures de mesure de la limite de formage des matériaux à couche métallique d'une épaisseur comprise entre 0,5 μm et 300 μm. Les matériaux à couche métallique décrits ci-après sont généralement utilisés dans les composants électriques, les MEMS et les microdispositifs. Lorsque des matériaux à couche métallique utilisés dans les composants MEMS (voir le 2.1.2 de la CEI 62047-1:2005) sont fabriqués par un procédé de formage tel que l'empreinte, il est nécessaire de prévoir la défaillance des matériaux afin d'accroître la fiabilité des composants. Par le biais de cette prévision, l'efficacité de fabrication des composants MEMS par le procédé de formage peut également être améliorée, car la période d'élaboration d'un produit donné peut être réduite et le coût de fabrication peut ainsi en être diminué. La présente norme présente l'une des méthodes de prévision concernant la défaillance de matériaux lors du procédé d'empreinte.
Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda merjenja omejitev preoblikovanja kovinoplastnih materialov
Ta del standarda IEC 62047 opisuje opredelitve in postopke za merjenje omejitev preoblikovanja kovinoplastnih materialov z razponom debeline od 0,5 μm do 300 μm. Kovinoplastni materiali, opisani v tem standardu, se običajno uporabljajo v električnih sestavnih delih, napravah MEMS in mikronapravah. Kadar so kovinoplastni materiali, uporabljeni v napravi MEMS (glejte točko 2.1.2 standarda IEC 62047-1:2005), proizvedeni s procesom preoblikovanja, kot je vtiskanje, je treba napovedati odpoved materiala, da se poveča zanesljivost sestavnih delov. S pomočjo tega napovedovanja je mogoče izboljšati tudi učinkovitost proizvodnje sestavnih delov MEMS s procesom preoblikovanja, ker je mogoče obdobje razvoja proizvoda zmanjšati ter posledično znižati proizvodne stroške. Ta standard predstavlja eno od metod napovedovanja za odpoved materiala med procesom vtiskanja.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 62047-14:2012
01-junij-2012
Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda
merjenja omejitev preoblikovanja kovinoplastnih materialov
Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit
measuring method of metallic film materials
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur
Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode
de mesure des limites de formage des matériaux à couche métallique
Ta slovenski standard je istoveten z: EN 62047-14:2012
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-14:2012 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN 62047-14:2012
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SIST EN 62047-14:2012
EUROPEAN STANDARD
EN 62047-14
NORME EUROPÉENNE
April 2012
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 14: Forming limit measuring method of metallic film materials
(IEC 62047-14:2012)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 14: Méthode de mesure des limites Teil 14: Verfahren zur Ermittlung der
de formage des matériaux à couche Grenzformänderung metallischer
métallique Dünnschichtwerkstoffe
(CEI 62047-14:2012) (IEC 62047-14:2012)
This European Standard was approved by CENELEC on 2012-04-03. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland, Turkey and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2012 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-14:2012 E
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SIST EN 62047-14:2012
EN 62047-14:2012 - 2 -
Foreword
The text of document 47F/108/FDIS, future edition 1 of IEC 62047-14, prepared by SC 47F, "Micro-
electromechanical systems", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC
parallel vote and approved by CENELEC as EN 62047-14:2012.
The following dates are fixed:
(dop) 2013-01-03
• latest date by which the document has
to be implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2015-04-03
• latest date by which the national
standards conflicting with the
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent
rights.
Endorsement notice
The text of the International Standard IEC 62047-14:2012 was approved by CENELEC as a European
Standard without any modification.
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SIST EN 62047-14:2012
- 3 - EN 62047-14:2012
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year T
...
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