Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials

IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode de mesure des limites de formage des matériaux à couche métallique

La CEI 62047-14:2012 fournit les définitions et décrit les procédures de mesure de la limite de formage des matériaux à couche métallique d'une épaisseur comprise entre 0,5 μm et 300 μm. Les matériaux à couche métallique décrits ci-après sont généralement utilisés dans les composants électriques, les MEMS et les microdispositifs. Lorsque des matériaux à couche métallique utilisés dans les composants MEMS (voir le 2.1.2 de la CEI 62047-1:2005) sont fabriqués par un procédé de formage tel que l'empreinte, il est nécessaire de prévoir la défaillance des matériaux afin d'accroître la fiabilité des composants. Par le biais de cette prévision, l'efficacité de fabrication des composants MEMS par le procédé de formage peut également être améliorée, car la période d'élaboration d'un produit donné peut être réduite et le coût de fabrication peut ainsi en être diminué. La présente norme présente l'une des méthodes de prévision concernant la défaillance de matériaux lors du procédé d'empreinte.

Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda merjenja omejitev preoblikovanja kovinoplastnih materialov

Ta del standarda IEC 62047 opisuje opredelitve in postopke za merjenje omejitev preoblikovanja kovinoplastnih materialov z razponom debeline od 0,5 μm do 300 μm. Kovinoplastni materiali, opisani v tem standardu, se običajno uporabljajo v električnih sestavnih delih, napravah MEMS in mikronapravah. Kadar so kovinoplastni materiali, uporabljeni v napravi MEMS (glejte točko 2.1.2 standarda IEC 62047-1:2005), proizvedeni s procesom preoblikovanja, kot je vtiskanje, je treba napovedati odpoved materiala, da se poveča zanesljivost sestavnih delov. S pomočjo tega napovedovanja je mogoče izboljšati tudi učinkovitost proizvodnje sestavnih delov MEMS s procesom preoblikovanja, ker je mogoče obdobje razvoja proizvoda zmanjšati ter posledično znižati proizvodne stroške. Ta standard predstavlja eno od metod napovedovanja za odpoved materiala med procesom vtiskanja.

General Information

Status
Published
Publication Date
19-Apr-2012
Technical Committee
Current Stage
6060 - National Implementation/Publication (Adopted Project)
Start Date
11-Apr-2012
Due Date
16-Jun-2012
Completion Date
20-Apr-2012

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SLOVENSKI STANDARD
SIST EN 62047-14:2012
01-junij-2012
Polprevodniški elementi - Mikroelektromehanski elementi - 14. del: Metoda
merjenja omejitev preoblikovanja kovinoplastnih materialov
Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit
measuring method of metallic film materials
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 14: Verfahren zur
Ermittlung der Grenzformänderung metallischer Dünnschichtwerkstoffe
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14: Méthode
de mesure des limites de formage des matériaux à couche métallique
Ta slovenski standard je istoveten z: EN 62047-14:2012
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-14:2012 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62047-14:2012

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SIST EN 62047-14:2012

EUROPEAN STANDARD
EN 62047-14

NORME EUROPÉENNE
April 2012
EUROPÄISCHE NORM

ICS 31.080.99


English version


Semiconductor devices -
Micro-electromechanical devices -
Part 14: Forming limit measuring method of metallic film materials
(IEC 62047-14:2012)


Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 14: Méthode de mesure des limites Teil 14: Verfahren zur Ermittlung der
de formage des matériaux à couche Grenzformänderung metallischer
métallique Dünnschichtwerkstoffe
(CEI 62047-14:2012) (IEC 62047-14:2012)





This European Standard was approved by CENELEC on 2012-04-03. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the CEN-CENELEC Management Centre or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the CEN-CENELEC Management Centre has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland, Turkey and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Management Centre: Avenue Marnix 17, B - 1000 Brussels


© 2012 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-14:2012 E

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SIST EN 62047-14:2012
EN 62047-14:2012 - 2 -
Foreword
The text of document 47F/108/FDIS, future edition 1 of IEC 62047-14, prepared by SC 47F, "Micro-
electromechanical systems", of IEC TC 47, "Semiconductor devices" was submitted to the IEC-CENELEC
parallel vote and approved by CENELEC as EN 62047-14:2012.

The following dates are fixed:
(dop) 2013-01-03
• latest date by which the document has
to be implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2015-04-03
• latest date by which the national

standards conflicting with the
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such patent
rights.

Endorsement notice
The text of the International Standard IEC 62047-14:2012 was approved by CENELEC as a European
Standard without any modification.

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SIST EN 62047-14:2012
- 3 - EN 62047-14:2012

Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

IEC 62047-1 2005 Semiconductor devices - Micro- EN 62047-1 2006
electromechanical devices -
Part 1: Terms and definitions

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SIST EN 62047-14:2012

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SIST EN 62047-14:2012



IEC 62047-14

®


Edition 1.0 2012-02




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Semiconductor devices – Micro-electromechanical devices –

Part 14: Forming limit measuring method of metallic film materials




Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 14: Méthode de mesure des limites de formage des matériaux à couche

métallique















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE

PRICE CODE
INTERNATIONALE

CODE PRIX Q


ICS 31.080.99 ISBN 978-2-88912-938-6



Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62047-14:2012
– 2 – 62047-14 © IEC:2012
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions and symbols . 5
3.1 Terms and definitions . 5
3.2 Symbols . 6
4 Testing method . 6
4.1 General . 6
4.2 Equipment . 6
4.3 Specimen . 7
5 Test procedure and analysis . 8
5.1 Test procedure . 8
5.2 Data analysis . 9
6 Test report. 10
Annex A (informative) Principles of the forming limit diagram . 11
Annex B (informative) Grid marking method . 13
Annex C (informative) Gripping method . 15
Annex D (informative) Strain measuring method . 17

Figure 1 – Equipment and tools for forming limit tests . 7
Figure 2 – Rectangular specimens with six kinds of aspect ratio . 8
Figure 3 – Strain for forming limit measurement . 9
Figure 4 – Construct the forming limit diagram by plotting the major and minor strains . 9
Figure A.1 – Forming limit diagram . 11
Figure A.2 – Hemispherical punch for forming limit measurement . 11
Figure A.3 – Grid for forming limit measurement . 12
Figure A.4 – Loading path of the specimen with various aspect ratios . 12
Figure B.1 – Procedure of a photographic grid marking method . 13
Figure B.2 – Procedure for an inkjet grid marking method . 14
Figure C.1 – Gripping of the specimen using a ring shaped die . 15
Figure C.2 – Gripping of the specimen using adhesive bonding . 16
Figure D.1 – Set up for strain measurement using digital camera . 17
Figure D.2 – Example of pixel converting image of deformed specimen . 17

Table 1 – List of letter symbols . 6

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SIST EN 62047-14:2012
62047-14 © IEC:2012 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 14: Forming limit measuring method
of metallic film materials


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-14 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/108/FDIS 47F/118/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

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SIST EN 62047-14:2012
– 4 – 62047-14 © IEC:2012
A list of all parts of IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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SIST EN 62047-14:2012
62047-14 © IEC:2012 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 14: Forming limit measuring method
of metallic film materials



1 Scope
This part of IEC 62047 describes definitions and procedures for measuring the forming limit of
metallic film materials with a thickness range from 0,5 µm to 300 µm. The metallic film
materials described herein are typically used in electric components, MEMS and micro-
devices.
When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by
a forming process such as imprinting, it is necessary to predict the material failure in order to
increase the reliability of the components. Through this prediction, the effectiveness of
manufacturing MEMS components by a forming process can also be improved, because the
period of developing a product can be reduced and manufacturing costs can thus be
decreased. This standard presents one of the prediction methods for material failure in
imprinting process.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 62047-1:2005, Semiconductor devices – Micro-electromechanical devices – Part 1:
Terms and definitions
3 Terms, definitions and symbols
3.1 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 62047-1 and the
following apply.
3.1.1
circular grid
grid used for measuring the localized deformation of the specimens within the circle
3.1.2
grid patterns
pattern marked on the surface of the testing material permitt
...

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