EN IEC 63373:2022

Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

Richtlinien für Prüfverfahren des dynamischen Einschaltwiderstandes bei GaN-HEMT-Leistungswandlern

Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état passant des dispositifs de conversion de puissance fondés sur les HEMT en GaN

IEC 63373:2022 En règle générale, l’essai de résistance dynamique à l’état passant est une mesure des phénomènes de piégeage de charge dans les transistors de puissance en GaN. L'IEC 63373:2022 donne des lignes directrices pour l’essai de résistance dynamique à l’état passant des solutions de transistors de puissance latéraux en GaN. Les méthodes d’essai peuvent être appliquées aux éléments suivants: a) dispositifs de puissance discrets en GaN à mode d’enrichissement et de déplétion; b) solutions de puissance intégrées en GaN; c) dispositifs et solutions ci-dessus au niveau des plaquettes et des boîtiers. Les méthodes d’essai spécifiées peuvent être utilisées pour la caractérisation des dispositifs, les essais de production, les évaluations de fiabilité et les évaluations de l’application des dispositifs de conversion de puissance en GaN. Le présent document n’est pas destiné à couvrir les mécanismes sous-jacents de la résistance dynamique à l’état passant et sa représentation symbolique pour les spécifications du produit.

Smernice za dinamične metode preskusov odpornosti za naprave za pretvorbo energije na osnovi GaN HEMT (IEC 63373:2022)

Preskušanje dinamične odpornosti je na splošno merjenje pojavov zajetja naboja v močnostnih tranzistorjih GaN. Ta publikacija opisuje smernice za preskušanje dinamične odpornosti rešitev lateralnih močnostnih tranzistorjev. Preskusne metode je mogoče uporabiti za:
a) ločene naprave za napajanje z izboljšavo GaN in načinom praznjenja [1];
b) rešitve za napajanje z vgrajeno tehnologijo GaN;
c) zgoraj omenjene naprave na ravni rezin in paketov.
Preskusi na ravni rezin so priporočljivi za zmanjšanje parazitskih učinkov pri izvajanju zelo natančnih meritev. Pri preskusih na ravni paketov je priporočljivo upoštevati vpliv toplotnih značilnosti paketa, s čimer se zmanjšajo morebitne posledice samosegrevanja naprav, ki se preskušajo (DUT).
Predpisane preskusne metode je mogoče uporabiti za karakterizacijo naprav, proizvodno preskušanje, vrednotenje zanesljivosti in ocene uporabe naprav za pretvorbo energije GaN. Ta dokument ne zajema osnovnih mehanizmov dinamične odpornosti in njene simbolične predstavitve za specifikacije izdelkov.

General Information

• Status: Published
• Publication Date: 24-Mar-2022
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: CLC/SR 47 - Semiconductor devices
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 25-Mar-2022
• Completion Date: 25-Mar-2022
• Ref Project: SIST EN IEC 63373:2022 - Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022)

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN IEC 63373:2022
01-maj-2022
Smernice za dinamične metode preskusov odpornosti za naprave za pretvorbo
energije na osnovi GaN HEMT (IEC 63373:2022)
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion
devices (IEC 63373:2022)
Richtlinien für Prüfverfahren des dynamischen Einschaltwiderstandes bei GaN-HEMT-
Leistungswandlern (IEC 63373:2022)
Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état passant
des dispositifs de conversion de puissance fondés sur les HEMT en GaN (IEC
63373:2022)
Ta slovenski standard je istoveten z: EN IEC 63373:2022
ICS:
31.080.99 Drugi polprevodniški elementi Other semiconductor devices
SIST EN IEC 63373:2022 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN IEC 63373:2022

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SIST EN IEC 63373:2022


EUROPEAN STANDARD EN IEC 63373

NORME EUROPÉENNE

EUROPÄISCHE NORM March 2022
ICS 31.080.99

English Version
Dynamic on-resistance test method guidelines for GaN HEMT
based power conversion devices
(IEC 63373:2022)
Lignes directrices pour les méthodes d'essai de résistance Richtlinien für Prüfverfahren des dynamischen
dynamique à l'état passant des dispositifs de conversion de Einschaltwiderstandes bei GaN-HEMT-Leistungswandlern
puissance fondés sur les HEMT en GaN (IEC 63373:2022)
(IEC 63373:2022)
This European Standard was approved by CENELEC on 2022-03-17. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2022 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 63373:2022 E

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SIST EN IEC 63373:2022
EN IEC 63373:2022 (E)
European foreword
The text of document 47/2690/CDV, future edition 1 of IEC 63373, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 63373:2022.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2022-12-17
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2025-03-17
document have to be withdrawn

Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 63373:2022 was approved by CENELEC as a European
Standard without any modification.


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IEC 63373

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Edition 1.0 2022-02




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Dynamic on-resistance test method guidelines for GaN HEMT based power

conversion devices



Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état

passant des dispositifs de conversion de puissance fondés sur les HEMT en

GaN















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ICS 31.080.99 ISBN 978-2-8322-1076-6




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