SIST EN IEC 63373:2022
(Main)Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022)
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022)
In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices [1]
b) GaN integrated power solutions
c) the above in wafer and package levels
Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications.
The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
Richtlinien für Prüfverfahren des dynamischen Einschaltwiderstandes bei GaN-HEMT-Leistungswandlern (IEC 63373:2022)
Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état passant des dispositifs de conversion de puissance fondés sur les HEMT en GaN (IEC 63373:2022)
IEC 63373:2022 En règle générale, l’essai de résistance dynamique à l’état passant est une mesure des phénomènes de piégeage de charge dans les transistors de puissance en GaN. L'IEC 63373:2022 donne des lignes directrices pour l’essai de résistance dynamique à l’état passant des solutions de transistors de puissance latéraux en GaN. Les méthodes d’essai peuvent être appliquées aux éléments suivants:
a) dispositifs de puissance discrets en GaN à mode d’enrichissement et de déplétion;
b) solutions de puissance intégrées en GaN;
c) dispositifs et solutions ci-dessus au niveau des plaquettes et des boîtiers.
Les méthodes d’essai spécifiées peuvent être utilisées pour la caractérisation des dispositifs, les essais de production, les évaluations de fiabilité et les évaluations de l’application des dispositifs de conversion de puissance en GaN. Le présent document n’est pas destiné à couvrir les mécanismes sous-jacents de la résistance dynamique à l’état passant et sa représentation symbolique pour les spécifications du produit.
Smernice za dinamične metode preskusov odpornosti za naprave za pretvorbo energije na osnovi GaN HEMT (IEC 63373:2022)
Preskušanje dinamične odpornosti je na splošno merjenje pojavov zajetja naboja v močnostnih tranzistorjih GaN. Ta publikacija opisuje smernice za preskušanje dinamične odpornosti rešitev lateralnih močnostnih tranzistorjev. Preskusne metode je mogoče uporabiti za:
a) ločene naprave za napajanje z izboljšavo GaN in načinom praznjenja [1];
b) rešitve za napajanje z vgrajeno tehnologijo GaN;
c) zgoraj omenjene naprave na ravni rezin in paketov.
Preskusi na ravni rezin so priporočljivi za zmanjšanje parazitskih učinkov pri izvajanju zelo natančnih meritev. Pri preskusih na ravni paketov je priporočljivo upoštevati vpliv toplotnih značilnosti paketa, s čimer se zmanjšajo morebitne posledice samosegrevanja naprav, ki se preskušajo (DUT).
Predpisane preskusne metode je mogoče uporabiti za karakterizacijo naprav, proizvodno preskušanje, vrednotenje zanesljivosti in ocene uporabe naprav za pretvorbo energije GaN. Ta dokument ne zajema osnovnih mehanizmov dinamične odpornosti in njene simbolične predstavitve za specifikacije izdelkov.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN IEC 63373:2022
01-maj-2022
Smernice za dinamične metode preskusov odpornosti za naprave za pretvorbo
energije na osnovi GaN HEMT (IEC 63373:2022)
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion
devices (IEC 63373:2022)
Richtlinien für Prüfverfahren des dynamischen Einschaltwiderstandes bei GaN-HEMT-
Leistungswandlern (IEC 63373:2022)
Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état passant
des dispositifs de conversion de puissance fondés sur les HEMT en GaN (IEC
63373:2022)
Ta slovenski standard je istoveten z: EN IEC 63373:2022
ICS:
31.080.99 Drugi polprevodniški elementi Other semiconductor devices
SIST EN IEC 63373:2022 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
---------------------- Page: 1 ----------------------
SIST EN IEC 63373:2022
---------------------- Page: 2 ----------------------
SIST EN IEC 63373:2022
EUROPEAN STANDARD EN IEC 63373
NORME EUROPÉENNE
EUROPÄISCHE NORM March 2022
ICS 31.080.99
English Version
Dynamic on-resistance test method guidelines for GaN HEMT
based power conversion devices
(IEC 63373:2022)
Lignes directrices pour les méthodes d'essai de résistance Richtlinien für Prüfverfahren des dynamischen
dynamique à l'état passant des dispositifs de conversion de Einschaltwiderstandes bei GaN-HEMT-Leistungswandlern
puissance fondés sur les HEMT en GaN (IEC 63373:2022)
(IEC 63373:2022)
This European Standard was approved by CENELEC on 2022-03-17. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2022 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 63373:2022 E
---------------------- Page: 3 ----------------------
SIST EN IEC 63373:2022
EN IEC 63373:2022 (E)
European foreword
The text of document 47/2690/CDV, future edition 1 of IEC 63373, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 63373:2022.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2022-12-17
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2025-03-17
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 63373:2022 was approved by CENELEC as a European
Standard without any modification.
2
---------------------- Page: 4 ----------------------
SIST EN IEC 63373:2022
IEC 63373
®
Edition 1.0 2022-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Dynamic on-resistance test method guidelines for GaN HEMT based power
conversion devices
Lignes directrices pour les méthodes d’essai de résistance dynamique à l’état
passant des dispositifs de conversion de puissance fondés sur les HEMT en
GaN
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-1076-6
Warning! Make sure that you obtained this publication from an authorized distributor.
Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
---------------------- Page: 5 ----------------------
SIST EN IEC 63373:2022
– 2 – IEC 63373:2022 © IEC 2022
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms, definitions, symbols and abbreviated terms . 6
3.1 Terms and definitions . 6
3.2 Symbols and abbreviated terms . 6
4 Test circuits and waveforms . 7
4.1 General . 7
4.2 Inductive and resistive switching methods . 7
4.3 Pulsed current-voltage (I-V) method . 10
5 Requirements . 12
Bibliography . 14
Figure 1 – Inductive-resistive load “double-pulse” test circuit for hard-switching
evaluation . 8
Figure 2 – Depiction of the hard-switching “double-pulse” test circuit (showing its
similarity to a boost converter) . 8
Figure 3 – Simplified flowchart for inductive and/or resistive switching based dynamic
on-resistance test . 9
Figure 4 – Representative continuous-pulse hard-switching waveforms for measuring
dynamic on-resistance using the test circuits in Figure 1 and Figure 2 . 10
Figure 5 – Example test circuit for soft-switching on-resistance measurement (the gate
and drain terminals are pulsed with independent voltage signals) . 10
Figure 6 – Simplified flowchart for soft switching based dynamic on-resistance test . 11
Figure 7 – Illustrative timing diagram for measuring dynamic ON-resistance under
OFF-state stress in soft-switching mode . 12
---------------------- Page: 6 ----------------------
SIST EN IEC 63373:2022
IEC 63373:2022 © IEC 2022 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
DYNAMIC ON-RESISTANCE TEST METHOD GUIDELINES
FOR GaN HEMT BASED POWER CONVERSION DEVICES
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 63373 has been prepared by IEC technical committee 47: Semiconductor devices. It is an
International Standard.
1
This standard is based upon JEP173 [1]. It is used with permission of the copyright holder,
JEDEC Solid State Technology Association.
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2690/CDV 47/2735/RVC
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
___________
1
Numbers in square brackets refer to the Bibliography.
---------------------- Page: 7 ----------------------
SIST EN IEC 63373:2022
– 4 – IEC 63373:2022 © IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/standardsdev/publications.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The "colour inside" logo on the cover page of this document indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.
---------------------- Page: 8 ----------------------
SIST EN IEC 63373:2022
IEC 63373:2022 © IEC 2022 – 5 –
INTRODUCTION
This document is intended for use in the GaN power semiconductor and related power electronic
industries, and provides guidelines for measuring the dynamic ON-resistance of GaN power
devices.
Gallium Nitride (GaN) lateral power High Electron Mobility Transistor (HEMT) conducts through
a two-dimensional electron gas (2DEG) in ON-state operation. Due to the various stress
conditions that the device encounters during power electronic switching applications, some
charge could get trapped in specific regions of the transistor structure. The trapped electrons
cause an increased ON-resistance when operated in a switching environment. This
phenomenon is known as current collapse and the ON-resistance at switching operation is
called dynamic ON-resistance in order to distinguish from DC ON-resistance. Increased
dynamic ON-resistance translates to higher power loss, thereby reducing overall system
efficiency. Not verifying the dynamic ON-resistance characteristic can put GaN device reliability
at risk [2].
The test methods provided in this document can be used as a guideline for measuring dynamic
ON-resistance of GaN power device, focused on lateral HEMT technologies. These
...
Questions, Comments and Discussion
Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.