EN IEC 60749-17:2019

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17: Neutronenbestrahlung

Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 17: Irradiation aux neutrons

L’essai d’irradiation aux neutrons est réalisé pour déterminer la sensibilité des dispositifs à semiconducteurs à la dégradation par perte d’énergie non ionisante (NIEL, Non-Ionizing Energy Loss). L’essai décrit dans le présent document s’applique aux circuits intégrés et aux dispositifs discrets à semiconducteurs, et est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif. Les objectifs de l’essai sont les suivants: a) détecter et mesurer la dégradation des paramètres critiques des dispositifs à semiconducteurs en fonction de la fluence des neutrons; et b) déterminer si des paramètres spécifiés des dispositifs à semiconducteurs sont dans les limites spécifiées après exposition à un niveau spécifié de fluence de neutrons (voir Article 6).

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del: Obsevanje z nevtroni (IEC 60749-17:2019)

Preskus obsevanja z nevtroni se izvaja za določanje dovzetnosti polprevodniških elementov za degradacijo zaradi neionizacijske izgube energije (NIEL). Tukaj opisan preskus se uporablja za integrirana vezja in diskretne polprevodniške elemente in je namenjen za vojaško in aeronavtično uporabo. To je porušitveni preskus.
Cilji tega preskusa so naslednji:
a) zaznavanje in merjenje degradacije kritičnih parametrov polprevodniških elementov kot funkcije fluence nevtronov, in
b) ugotavljanje, ali so določeni parametri polprevodniških elementov znotraj določenih omejitev po izpostavitvi določeni ravni fluence nevtronov (glej 6. točko).

General Information

• Status: Published
• Publication Date: 09-May-2019
• Withdrawal Date: 01-May-2022
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: CLC/TC 47X - Semiconductor devices and trusted chips
• Drafting Committee: IEC/TC 47 - IEC_TC_47
• Current Stage: 6060 - Document made available - Publishing
• Start Date: 10-May-2019
• Completion Date: 10-May-2019
• Ref Project: SIST EN IEC 60749-17:2019 - Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2019)

Relations

• Replaces: EN 60749-17:2003 - Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
• Effective Date: 23-Jan-2023

Standards Content (Sample)

SLOVENSKI STANDARD
01-julij-2019
Nadomešča:
SIST EN 60749-17:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del:
Obsevanje z nevtroni (IEC 60749-17:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron
irradiation (IEC 60749-17:2019)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17:
Neutronenbestrahlung (IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
17: Irradiation aux neutrons (IEC 60749-17:2019)
Ta slovenski standard je istoveten z: EN IEC 60749-17:2019
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60749-17

NORME EUROPÉENNE
EUROPÄISCHE NORM
May 2019
ICS 31.080.01 Supersedes EN 60749-17:2003
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 17: Neutron irradiation
(IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 17: Irradiation aux Prüfverfahren - Teil 17: Neutronenbestrahlung
neutrons (IEC 60749-17:2019)
(IEC 60749-17:2019)
This European Standard was approved by CENELEC on 2019-05-02. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-17:2019 E

European foreword
The text of document 47/2538/FDIS, future edition 2 of IEC 60749-17, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-17:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-02-02
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-05-02
document have to be withdrawn
This document supersedes EN 60749-17:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 60749-17:2019 was approved by CENELEC as a European
Standard without any modification.

IEC 60749-17 ®
Edition 2.0 2019-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 17: Neutron irradiation
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 17: Irradiation aux neutrons

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-6702-8

– 2 – IEC 60749-17:2019 © IEC 2019
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
4.1 Test instruments . 5
4.2 Radiation source . 5
4.3 Dosimetry equipment . 6
4.4 Dosimetry measurements . 6
4.4.1 Neutron fluences . 6
4.4.2 Dose measurements . 6
5 Procedure . 6
5.1 Safety requirements . 6
5.2 Test samples . 6
5.3 Pre-exposure . 7
5.3.1 Electrical tests . 7
5.3.2 Exposure set-up . 7
5.4 Exposure . 7
5.5 Post-exposure . 7
5.5.1 Electrical tests . 7
5.5.2 Anomaly investigation . 7
5.6 Reporting . 7
6 Summary . 8
Bibliography . 9

IEC 60749-17:2019 © IEC 2019 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 17: Neutron irradiation
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
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between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-17 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2003. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) updates to better align the test method with MIL-STD 883J, method 1017, including
removal of restriction of use of the document, and a requirement to limit the total
ionization dose;
b) addition of a Bibliography, including US MIL- and ASTM standards relevant to this test
method.
– 4 – IEC 60749-17:2019 © IEC 2019
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2538/FDIS 47/2553/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IEC 60749-17:2019 © IEC 2019 – 5 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 17: Neutron irradiation
1 Scope
The neutron irradiation test is performed to determine the susceptibility of semiconductor
devices to non-ionizing energy loss (NIEL) degradation. The test described herein is
applicable to integrated circuits and discrete semiconductor devices and is intended for
military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as
a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after
exposure to a specified level of neutron fluence (see Clause 6).
2 Normative references
There are no normative references in this document.
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Test apparatus
4.1 Test instruments
Test instrumentation to be used in the radiation test shall be standard laboratory electronic
test instruments such as power supplies, digital voltmeters, an
...