IEC 62047-33:2019

Semiconductor devices - Micro-electromechanical devices - Part 33: MEMS piezoresistive pressure-sensitive device

IEC 62047-33:2019 (E) defines terms, definitions, essential ratings and characteristics, as well as test methods applicable to MEMS piezoresistive pressure-sensitive device. This document applies to piezoresistive pressure-sensitive devices for automotive, medical treatment, electronic products.

General Information

• Status: Published
• Publication Date: 04-Apr-2019
• ICS: 31.080.99 - Other semiconductor devices
• ICS: 31.140 - Piezoelectric devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Drafting Committee: WG 3 - TC 47/SC 47F/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 05-Apr-2019
• Completion Date: 26-Apr-2019

Standards Content (Sample)

IEC 62047-33 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 33: MEMS piezoresistive pressure-sensitive device

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IEC 62047-33 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –

Part 33: MEMS piezoresistive pressure-sensitive device

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-6718-9

– 2 – IEC 62047-33:2019 © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 7
4 Essential ratings and characteristics . 8
4.1 Ratings (Limiting values) . 8
4.2 Recommended operating conditions . 8
4.3 Characteristics . 8
5 Test methods . 9
5.1 Input resistance . 9
5.2 Output resistance . 9
5.3 Leakage current . 9
5.3.1 P-N junction isolation type sensitive device . 9
5.3.2 Insulating medium type sensitive device . 10
5.4 Breakdown voltage . 10
5.5 Isolation voltage . 10
5.6 Static performances . 10
5.6.1 Test method . 10
5.6.2 Output under normal pressure . 12
5.6.3 Zero output . 12
5.6.4 Output symmetry . 13
5.6.5 Full-span output . 13
5.6.6 Nonlinearity . 13
5.6.7 Pressure hysteresis . 13
5.6.8 Repeatability . 14
5.6.9 Accuracy . 15
5.6.10 Sensitivity . 15
5.6.11 Zero drift. 15
5.7 Stability. 16
5.7.1 Test method . 16
5.7.2 Zero long-term stability . 16
5.7.3 Sensitivity long-term stability . 16
5.8 Temperature influence . 16
5.8.1 Test method . 16
5.8.2 Thermal zero drift . 17
5.8.3 Thermal sensitivity drift . 17
5.8.4 Thermal zero output hysteresis . 17
5.8.5 Thermal sensitivity hysteresis . 17
5.8.6 Temperature hysteresis . 18
5.9 Static pressure influence . 18
5.9.1 Two way static pressure . 18
5.9.2 Unidirectional static pressure . 19
5.10 Overload . 19
5.11 Dynamic performance . 19
5.11.1 Test method . 19
5.11.2 Frequency response . 20
5.11.3 Ringing frequency . 20

5.11.4 Damping ratio . 20
5.11.5 Rise time . 21
5.11.6 Resonant frequency . 21
5.11.7 Overshoot . 21
5.12 Environment test . 21
5.12.1 Storage at high temperature . 21
5.12.2 Storage at low temperature . 21
5.12.3 Temperature cycling . 22
5.12.4 Vibration . 22
5.12.5 Mechanical shock . 22
5.12.6 Acceleration . 22
5.12.7 Moisture resistance . 22
5.12.8 Mucedine . 22
5.12.9 Salt atmosphere . 22
5.12.10 Electromagnetic compatibility . 23
5.12.11 Low pressure . 23
5.12.12 High temperature electric life . 23
5.12.13 Fatigue life . 23
Bibliography . 24

Figure 1 – Structure schematic diagram of the device . 7
Figure 2 – Test connection graph for P-N junction isolation type sensitive device . 10
Figure 3 – Test connection graph for insulating medium type sensitive device . 10
Figure 4 – Test system . 11
Figure 5 – The output wave . 20

Table 1 – Characteristics of the device . 8

– 4 – IEC 62047-33:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 33: MEMS piezoresistive pressure-sensitive device

FOREWORD
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patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-33 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/327FDIS 47F/332/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

– 6 – IEC 62047-33:2019 © IEC 2019
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 33: MEMS piezoresistive pressure-sensitive device

1 Scope
This part of IEC 62047 defines terms, definitions, essential ratings and characteristics, as well
as test methods applicable to MEMS piezoresistive pressure-sensitive device. This document
applies to piezoresistive pressure-sensitive devices for automotive, medical treatment,
electronic products.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 60068-2-1, Environmental testing – Part 2-1: Tests –Test A: Cold
IEC 60068-2-10, Environmental testing – Part 2-10: Tests – Test J and guidance: Mould
growth
IEC 60747-14-3, Semiconductor devices – Part 14-3: Semiconductor sensors – Pressure
sensors
IEC 60749-2, Semiconductor devices-Mechanical and climatic test methods – Part 2: Low air
pressure
IEC 60749-6, Semiconductor devices-Mechanical and climatic test methods – Part 6: Storage
at high temperature
IEC 60749-10, Semiconductor devices – Mechanical and climatic tests methods – Part 10:
Mechanical shock
IEC 60749-12, Semiconductor devices – Mechanical and climatic tests methods – Part 12:
Vibration, variable frequency
IEC 60749-13, Semiconductor devices – Mechanical and climatic test methods – Part 13: Salt
atmosphere
IEC 60749-24, Semiconductor devices – Mechanical and climatic test methods – Part 24:
Accelerated moisture resistance-Unbiased HAST
IEC 60749-25, Semiconductor devices – Mechanical and climatic test methods – Part 25:
Temperature cycling
IEC 60749-36, Semiconductor devices – Mechanical and climatic tests methods – Part 36:
Acceleration, steady state
IEC TR 61000-4-1, Electromagnetic compatibility (EMC) – Part 4-1:Testing and measurement
techniques – Overview of the IEC 61000-4 series
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 60747-14-3 and the
following apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
MEMS piezoresistive pressure-sensitive device
device that transforms pressure signal into electric signal due to piezoresistive effect, usually
including cavity-membrane structure on silicon substrate and Wheatstone bridge in the
membrane fabricated by MEMS technology
IEC
Key
1 membrane
2 sensitive resistance
3 silicon
4 cavity
Figure 1 – Structure schematic diagram of the device
3.2
frequency response
ratio variation of output to measurand depending on frequency
Note 1 to entry: The frequency response should be based on the given frequency range.
3.3
resonant frequency
frequency at which the device responds with the maximum output amplitude
3.4
ringing frequency
frequency of free oscillations in the transducer output resulting from a step change in
measurand
3.5
damping ratio
ratio of the practical damping coefficient to the critical damping coefficient
3.6
rise time
length of time required for the output of the device to rise from 10 % to 90 % of its final steady
value when excited by a step change in measurand

– 8 – IEC 62047-33:2019 © IEC 2019
3.7
overshoot
amount of output measured beyond the final steady output value in response to a step change
in the measurand
4 Essential ratings and characteristics
4.1 Ratings (Limiting values)
The following items should be described in the specification, unless otherwise stated in the
relevant procurement specifications. Stresses over these limits can be one of the causes of
permanent damage to the devices:
a) power supply voltage;
b) storage temperature;
c) mechanical shock;
d) acceleration;
e) vibration.
4.2 Recommended operating conditions
The following items should be described in the specification, unless otherwise stated in the
relevant procurement specifications.
a) power supply voltage;
b) operating temperature.
4.3 Characteristics
Characteristics of the pressure-sensitive devices are listed as shown in Table 1.
Table 1 – Characteristics of the device
Value
Parameter Mandatory Optional Symbol Test method
Min Type Max
Input resistance × × R See 5.1
i
Output resistance × × R See 5.2
o
Leakage current × × × I See 5.3
L
Breakdown voltage × × × U See 5.4
b
Isolation voltage × × × U See 5.5
s
Output under normal
× × × Y See 5.6.2
c
pressure
Zero output × × × Y See 5.6.3
Output symmetry ×  × P See 5.6.4
d
F·S
Full-span output ×  × Y See 5.6.5
Nonlinearity ×  × ξ See 5.6.6
L
Pressure hysteresis ×  × ξ See 5.6.7
H
Repeatability ×  × ξ See 5.6.8
R
Accuracy ×  × ξ See 5.6.9
Sensitivity ×  × b See 5.6.10
Zero drift ×  × D See 5.6.11
Zero long-term stability ×  × r See 5.7.2
z
Value
Parameter Mandatory Optional Symbol Test method
Min Type Max
Sensitivity long-term
×  × r See 5.7.3
s
stability
Thermal zero drift ×  × α See 5.8.2
Thermal sensitivity drift ×  × β See 5.8.3
Thermal zero output
×  × α See 5.8.4
H
hysteresis
Thermal sensitivity
×  × β See 5.8.5
H
hysteresis
Temperature hysteresis ×  × σ See 5.8.6
Zero static pressure
×  × p See 5.9.1.2
deviation
Full-span output static
×  × p See 5.9.1.3
F·S
pressure deviation
Overload ×  × O See 5.10
l
Frequency response × × × F See 5.11.2
r
Ringing frequency × × w See 5.11.3
d
Damping ratio × × ζ See 5.11.4
Rise time × × T See 5.11.5
r
Resonant frequency ×  × w See 5.11.6
x
Overshoot ×  × O See 5.11.7
s
5 Test methods
5.1 Input resistance
Measure the resistance value of power supply terminals with the output terminals of device
staying open circuited.
5.2 Output resistance
Measure the resistance value of output terminals of device with the power supply terminals
staying short circuited.
5.3 Leakage current
5.3.1 P-N junction isolation type sensitive device
Connect the P-N junction isolation type sensitive device according to Figure 2. There are P-N
junctions between the sensitive resistance and the silicon substrate. Measure the voltage V of
the standard resistance R under the condition of specified bias voltage and no light. Calculate
the leakage current according to Formula (1):
V
I = (1)
l
R
where
is the leakage current;
I
l
V is the voltage of the standard resistance;

– 10 – IEC 62047-33:2019 © IEC 2019
R is the value of the standard resistance.
Choose the bias voltage form the following: 10 V DC， 15 V DC， 20 V DC， 25 V DC，
30 V DC，35 V DC，40 V DC.
V
R
L-
L+
IEC
Figure 2 – Test connection graph for P-N junction isolation type sensitive device
5.3.2 Insulating medium type sensitive device
Connect it according to Figure 3. There is an insulating medium between sensitive resistance
and silicon substrate. Measure the voltage V of the standard resistance R under the condition
of the specified bias voltage and no light. Calculate the leakage current according to
Formula (1).
V
R
L+
L-
IEC
Key
1 insulating medium
Figure 3 – Test connection graph for insulating medium type sensitive device
5.4 Breakdown voltage
Measure the inverse voltage between sensitive resistance and the silicon substrate under the
specified test current. Choose the test current form the following: 2 μA， 5 μA， 10 μA，
20 μA，50 μA.
...