IEC 60747-9:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:  
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

Dispositifs à semiconducteurs - Partie 9: Dispositifs discrets - Transistors bipolaires à grille isolée (IGBT)

L’IEC 60747-9:2019 ED3 spécifie la terminologie, les symboles littéraux, les valeurs assignées et caractéristiques essentielles, la vérification des valeurs assignées ainsi que les méthodes de mesure pour les transistors bipolaires à grille isolée (IGBT, insulated-gate bipolar transistors).
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:  
ajout de transistor bipolaire à grille isolée bloqué en inverse et du contenu technique associé;
ajout de transistor bipolaire à grille isolée passant en inverse et du contenu technique associé;
modification, combinaison ou suppression de certaines parties de l’édition précédente.

General Information

• Status: Published
• Publication Date: 12-Nov-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: PPUB - Publication issued
• Start Date: 15-Nov-2019
• Completion Date: 13-Nov-2019

Relations

• Revises: IEC 60747-9:2007 - Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-9 ®
Edition 3.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs –
Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)

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IEC 60747-9 ®
Edition 3.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs –

Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01; 31.080.30 ISBN 978-2-8322-7530-6

– 2 – IEC 60747-9:2019 © IEC 2019
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references . 9
3 Terms and definitions . 9
3.1 General terms . 9
3.2 Terms related to ratings and characteristics, voltages and currents . 10
3.3 Terms related to ratings and characteristics . 13
4 Letter symbols . 15
4.1 General . 15
4.2 Graphical symbols . 16
4.3 Additional general subscripts . 16
4.4 List of letter symbols . 16
4.4.1 Voltages . 16
4.4.2 Currents . 17
4.4.3 Other electrical magnitudes . 17
4.4.4 Time . 18
4.4.5 Thermal magnitudes . 18
5 Essential ratings and characteristics . 18
5.1 General . 18
5.2 Ratings (limiting values) . 18
5.2.1 General . 18
5.2.2 Ambient or case or virtual junction operating temperature (T or T or
a c
T ) . 18
vj
5.2.3 Storage temperature (T ) . 18
stg
5.2.4 Collector-emitter voltage with gate-emitter short-circuited (V ) . 18
CES
5.2.5 Gate-emitter voltage with collector-emitter short-circuit (V ) . 19
GES
5.2.6 Continuous (direct) reverse voltage of a reverse-blocking IGBT (V ) . 19
R*
5.2.7 Continuous (direct) collector current (I ) . 19
C
5.2.8 Repetitive peak collector current (I ) . 19
CRM
5.2.9 Non-repetitive peak collector current (I ) . 19
CSM
5.2.10 Continuous (direct) reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RC
5.2.11 Repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCRM
5.2.12 Non-repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCSM
5.2.13 Total power dissipation (P ) . 19
tot
5.2.14 Maximum forward biased safe operating area (FBSOA) (where
appropriate) . 19
5.2.15 Maximum reverse biased safe operating area (RBSOA) . 19
5.2.16 Maximum short-circuit safe operating area (SCSOA) . 20
5.2.17 Maximum terminal current (I ) (where appropriate) . 20
tRMS
5.2.18 Mounting force (F) . 20
5.2.19 Mounting torque (M) . 20
5.3 Characteristics . 20
5.3.1 General . 20
5.3.2 Collector-emitter breakdown voltage (V ) (where appropriate) . 20
(BR)CES
5.3.3 Collector-emitter sustaining voltage (V ) (where appropriate). 20
CE*sus
5.3.4 Collector-emitter saturation voltage (V ) . 20
CEsat
5.3.5 Gate-emitter threshold voltage (V ) . 20
GE(th)
5.3.6 Reverse-conducting voltage of a reverse-conducting IGBT (V ) . 20
RC
5.3.7 Collector-emitter cut-off current (I ) . 20
CE*
5.3.8 Gate leakage current (I ) . 20
GES
5.3.9 Reverse current of a reverse-blocking IGBT (I ) . 21
R*
5.3.10 Capacitances . 21
5.3.11 Gate charge (Q ) . 21
G
5.3.12 Internal gate resistance (r ) . 21
g
5.3.13 Switching characteristics . 21
5.3.14 Thermal resistance junction to case (R ) . 22
th(j-c)
5.3.15 Thermal resistance junction to ambient (R ) . 22
th(j-a)
5.3.16 Transient thermal impedance junction to case (Z ) . 22
th(j-c)
5.3.17 Transient thermal impedance junction to ambient (Z ) . 23
th(j-a)
6 Measuring methods . 23
6.1 General . 23
6.2 Verification of ratings (limiting values). 23
6.2.1 General . 23
6.2.2 Collector-emitter voltages (V , V , V ) . 23
CES CER CEX
6.2.3 Reverse voltage of a reverse-blocking IGBT (V , V ) . 24
RS RX
6.2.4 Gate-emitter voltage with collector-emitter short-circuit (±V ) . 25
GES
6.2.5 Continuous (direct) collector current (I ) . 26
C
6.2.6 Maximum peak collector current (I and I ) . 27
CRM CSM
6.2.7 Continuous (direct) reverse-conducting current of a reverse-conducing
IGBT (I ) . 28
RC
6.2.8 Maximum peak reverse-conducting current of a reverse-conducting
IGBT (I and I ) . 29
RCRM RCSM
6.2.9 Maximum reverse biased safe operating area (RBSOA) . 30
6.2.10 Maximum short-circuit safe operating area (SCSOA) . 32
6.3 Methods of measurement . 35
6.3.1 Collector-emitter saturat
...