IEC 60747-9:2019
(Main)Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.
Dispositifs à semiconducteurs - Partie 9: Dispositifs discrets - Transistors bipolaires à grille isolée (IGBT)
L’IEC 60747-9:2019 ED3 spécifie la terminologie, les symboles littéraux, les valeurs assignées et caractéristiques essentielles, la vérification des valeurs assignées ainsi que les méthodes de mesure pour les transistors bipolaires à grille isolée (IGBT, insulated-gate bipolar transistors).
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
ajout de transistor bipolaire à grille isolée bloqué en inverse et du contenu technique associé;
ajout de transistor bipolaire à grille isolée passant en inverse et du contenu technique associé;
modification, combinaison ou suppression de certaines parties de l’édition précédente.
General Information
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Standards Content (Sample)
IEC 60747-9 ®
Edition 3.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Dispositifs à semiconducteurs –
Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)
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IEC 60747-9 ®
Edition 3.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Dispositifs à semiconducteurs –
Partie 9: Dispositifs discrets – Transistors bipolaires à grille isolée (IGBT)
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01; 31.080.30 ISBN 978-2-8322-7530-6
– 2 – IEC 60747-9:2019 © IEC 2019
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references . 9
3 Terms and definitions . 9
3.1 General terms . 9
3.2 Terms related to ratings and characteristics, voltages and currents . 10
3.3 Terms related to ratings and characteristics . 13
4 Letter symbols . 15
4.1 General . 15
4.2 Graphical symbols . 16
4.3 Additional general subscripts . 16
4.4 List of letter symbols . 16
4.4.1 Voltages . 16
4.4.2 Currents . 17
4.4.3 Other electrical magnitudes . 17
4.4.4 Time . 18
4.4.5 Thermal magnitudes . 18
5 Essential ratings and characteristics . 18
5.1 General . 18
5.2 Ratings (limiting values) . 18
5.2.1 General . 18
5.2.2 Ambient or case or virtual junction operating temperature (T or T or
a c
T ) . 18
vj
5.2.3 Storage temperature (T ) . 18
stg
5.2.4 Collector-emitter voltage with gate-emitter short-circuited (V ) . 18
CES
5.2.5 Gate-emitter voltage with collector-emitter short-circuit (V ) . 19
GES
5.2.6 Continuous (direct) reverse voltage of a reverse-blocking IGBT (V ) . 19
R*
5.2.7 Continuous (direct) collector current (I ) . 19
C
5.2.8 Repetitive peak collector current (I ) . 19
CRM
5.2.9 Non-repetitive peak collector current (I ) . 19
CSM
5.2.10 Continuous (direct) reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RC
5.2.11 Repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCRM
5.2.12 Non-repetitive peak reverse-conducting current of a reverse-conducting
IGBT (I ) . 19
RCSM
5.2.13 Total power dissipation (P ) . 19
tot
5.2.14 Maximum forward biased safe operating area (FBSOA) (where
appropriate) . 19
5.2.15 Maximum reverse biased safe operating area (RBSOA) . 19
5.2.16 Maximum short-circuit safe operating area (SCSOA) . 20
5.2.17 Maximum terminal current (I ) (where appropriate) . 20
tRMS
5.2.18 Mounting force (F) . 20
5.2.19 Mounting torque (M) . 20
5.3 Characteristics . 20
5.3.1 General . 20
5.3.2 Collector-emitter breakdown voltage (V ) (where appropriate) . 20
(BR)CES
5.3.3 Collector-emitter sustaining voltage (V ) (where appropriate). 20
CE*sus
5.3.4 Collector-emitter saturation voltage (V ) . 20
CEsat
5.3.5 Gate-emitter threshold voltage (V ) . 20
GE(th)
5.3.6 Reverse-conducting voltage of a reverse-conducting IGBT (V ) . 20
RC
5.3.7 Collector-emitter cut-off current (I ) . 20
CE*
5.3.8 Gate leakage current (I ) . 20
GES
5.3.9 Reverse current of a reverse-blocking IGBT (I ) . 21
R*
5.3.10 Capacitances . 21
5.3.11 Gate charge (Q ) . 21
G
5.3.12 Internal gate resistance (r ) . 21
g
5.3.13 Switching characteristics . 21
5.3.14 Thermal resistance junction to case (R ) . 22
th(j-c)
5.3.15 Thermal resistance junction to ambient (R ) . 22
th(j-a)
5.3.16 Transient thermal impedance junction to case (Z ) . 22
th(j-c)
5.3.17 Transient thermal impedance junction to ambient (Z ) . 23
th(j-a)
6 Measuring methods . 23
6.1 General . 23
6.2 Verification of ratings (limiting values). 23
6.2.1 General . 23
6.2.2 Collector-emitter voltages (V , V , V ) . 23
CES CER CEX
6.2.3 Reverse voltage of a reverse-blocking IGBT (V , V ) . 24
RS RX
6.2.4 Gate-emitter voltage with collector-emitter short-circuit (±V ) . 25
GES
6.2.5 Continuous (direct) collector current (I ) . 26
C
6.2.6 Maximum peak collector current (I and I ) . 27
CRM CSM
6.2.7 Continuous (direct) reverse-conducting current of a reverse-conducing
IGBT (I ) . 28
RC
6.2.8 Maximum peak reverse-conducting current of a reverse-conducting
IGBT (I and I ) . 29
RCRM RCSM
6.2.9 Maximum reverse biased safe operating area (RBSOA) . 30
6.2.10 Maximum short-circuit safe operating area (SCSOA) . 32
6.3 Methods of measurement . 35
6.3.1 Collector-emitter saturation voltage (V ) . 35
CEsat
6.3.2 Gate-emitter threshold voltage (V ) . 36
GE(th)
6.3.3 Reverse-conducting voltage of a reverse-conducting IGBT (V ) . 36
RC
6.3.4 Collector cut-off current (I , I , I ) . 37
CES CER CEX
6.3.5 Gate leakage current (I ) . 38
GES
6.3.6 Reverse current of a reverse-blocking IGBT (I , I ) . 39
RS RX
6.3.7 Input capacitance (C ) . 40
ies
6.3.8 Output capacitance (C ) . 41
oes
6.3.9 Reverse transfer capacitance (C ) . 43
res
6.3.10 Gate charge (Q ) . 43
G
6.3.11 Internal gate resistance (r ) . 45
g
6.3.12 Turn-on times (t , t , t ) and turn-on energy (E ) . 46
d(on) r on on
6.3.13 Turn-off times (t , t , t , t ) and turn-off energy (E ). 48
d(off) f off z off
6.3.14 Peak reverse recovery current (I ), reverse recovery time (t ),
rrm rr
reverse recovery energy (E ) and reverse recovered charge (Q ) of a
rr rr
reverse-blocking IGBT . 49
6.3.15 Peak forward recovery current (I ), forward recovery time (t ),
frm fr
forward recovery energy (E ) and forward recovered charge (Q ) of a
fr fr
reverse-conducting IGBT . 52
– 4 – IEC 60747-9:2019 © IEC 2019
6.3.16 Thermal resistance junction to case (R ) and transient thermal
th(j-c)
impedance junction to case (Z ) . 54
th(j-c)
7 Acceptance and reliability . 60
7.1 General requirements . 60
7.2 Specific requirements . 60
7.2.1 List of endurance and reliability tests . 60
7.2.2 Conditions for endurance and reliability tests . 60
7.2.3 Acceptance-defining characteristics and criteria for endurance and
reliability tests . 60
7.2.4 Procedure in case of a testing error . 61
7.2.5 Endurance and reliability tests and test methods . 61
7.3 Type tests and routine tests . 64
7.3.1 Type tests. 64
7.3.2 Routine tests . 65
Annex A (normative) Measuring method for collector-emitter breakdown voltage . 66
A.1 General . 66
A.2 Purpose . 66
A.3 Circuit diagram . 66
A.4 Measurement procedure . 66
A.5 Specified conditions . 67
Annex B (normative) Measuring method for collector-emitter sustaining voltage . 68
B.1 General . 68
B.2 Purpose . 68
B.3 Circuit diagram . 68
B.4 Circuit description and requirements . 68
B.5 Measurement procedure . 69
B.6 Precautions to be observed. 69
B.7 Requirements . 69
B.8 Specified conditions . 70
Annex C (normative) Measuring method for inductive load turn-off current under
specified conditions . 71
C.1 General . 71
C.2 Purpose . 71
C.3 Circuit diagram and waveforms . 71
C.4 Circuit description and requirements . 72
C.5 Measurement procedure . 72
C.6 Specified conditions . 72
Annex D (normative) Forward biased safe operating area (FBSOA) . 73
D.1 General . 73
D.2 Purpose . 73
D.3 Method 1 . 73
D.3.1 General . 73
D.3.2 Circuit diagram . 73
D.3.3 Test procedure . 74
D.3.4 Specified conditions. 75
D.4 Method 2 . 75
D.4.1 General . 75
D.4.2 Circuit diagram . 75
D.4.3 Test procedure and precautions to be taken . 76
D.4.4 Specified conditions. 77
Bibliography . 78
Figure 1 – Graphical symbols. 16
Figure 2 – Circuit for testing the collector-emitter voltages V , V , V . 24
CES CER CEX
Figure 3 – Circuit for testing the reverse voltages V , V . 25
RS RX
Figure 4 – Circuit for testing the gate-emitter voltage ±V . 26
GES
Figure 5 – Circuit for testing collector current . 27
Figure 6 – Circuit for testing peak collector current . 28
Figure 7 – Circuit for testing reverse-conducting current . 28
Figure 8 – Circuit for testing peak reverse-conducting current . 29
Figure 9 – Circuit for testing reverse biased safe operating area (RBSOA) . 30
Figure 10 – Waveforms of gate-emitter voltage V and collector current I during
GE C
turn-off . 31
Figure 11 – Circuit for testing safe operating pulse width at load short-circuit (SCSOA1) . 32
Figure 12 – Waveforms of gate-emitter voltage V , collector current I and collector-
GE C
emitter voltage V during load short-circuit condition SCSOA1 . 32
CE
Figure 13 – Circuit for testing short-circuit safe operating area 2 (SCSOA2) . 33
Figure 14 – Waveforms during SCSOA2 . 34
Figure 15 – Circuit for measuring the collector-emitter saturation voltage V . 35
CEsat
Figure 16 – Circuit for measuring the gate-emitter threshold voltage . 36
Figure 17 – Circuit for measuring the reverse-conducting voltage V . 37
RC
Figure 18 – Circuit for measuring the collector cut-off current . 38
Figure 19 – Circuit for measuring the gate leakage current . 39
Figure 20 – Circuit for measuring the reverse current. 40
Figure 21 – Circuit for measuring the input capacitance . 41
Figure 22 – Circuit for measuring the output capacitance . 42
Figure 23 – Circuit for measuring the reverse transfer capacitance . 43
Figure 24 – Circuit for measuring the gate charge . 44
Figure 25 – Basic gate charge waveform . 44
Figure 26 – Circuit for measuring the internal gate resistance . 45
Figure 27 – Circuit for measuring turn-on times and energy . 46
Figure 28 – Waveforms during turn-on times . 47
Figure 29 – Circuit for measuring turn-off times and energy . 48
Figure 30 – Waveforms during turn-off times . 48
Figure 31 – Circuit for measuring reverse recovery characteristics. 50
Figure 32 – Waveforms during reverse recovery . 50
Figure 33 – Circuit for measuring forward recovery characteristics. 52
Figure 34 – Waveforms during forward recovery . 53
Figure 35 – Circuit for measuring the variation with temperature of the collector-
emitter voltage V at a low measuring current I and for heating up the IGBT by a
CE C1
high current I . 55
C2
Figure 36 – Typical variation of the collector-emitter voltage V at a low measuring
CE
current I with the case temperature T (when heated from outside, i.e. T = T ) . 56
C1 c c vj
Figure 37 – I , V and T with time . 57
C CE c
– 6 – IEC 60747-9:2019 © IEC 2019
Figure 38 – Circuit for measuring thermal resistance and transient thermal impedance:
Method 2 . 58
Figure 39 – Typical variation of the gate-emitter threshold voltage V at a low
GE(th)
measuring current I with the case temperature T (when heated from the outside, i.e.
C1
c
T = T ) . 59
c vj
Figure 40 – I , V and T with time . 60
C GE c
Figure 41 – Circuit for high-temperature blockings . 62
Figure 42 – Circuit for high-temperature gate bias . 63
Figure 43 – Circuit for intermittent operating life . 64
Figure 44 – Expected number of cycles versus temperature rise ∆T . 64
vj
Figure A.1 – Circuit for measuring the collector-emitter breakdown voltage . 66
Figure B.1 – Circuit for measuring the collector-emitter sustaining voltage V . 68
CE*sus
Figure B.2 – Operating locus of the collector current . 69
Figure C.1 – Circuit for measuring inductive load turn-off current . 71
Figure C.2 – Waveforms of collector current I and collector voltage V during turn-off . 72
C CE
Figure D.1 – Circuit for testing forward biased safe operating area (method 1) . 73
Figure D.2 – Typical ∆V versus collector-emitter voltage V characteristics . 74
CE CE
Figure D.3 – Typical forward biased safe operating area . 75
Figure D.4 – Circuit for testing forward biased safe operating area (method 2) . 76
Figure D.5 – Latching mode operation waveforms . 76
Figure D.6 – Latching mode I-V characteristics . 76
Table 1 – Acceptance defining characteristics. 23
Table 2 – Acceptance-defining characteristics for endurance and reliability tests . 61
Table 3 – Minimum type and routine tests for IGBTs when applicable . 65
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
FOREWORD
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International Standard IEC 60747-9 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This third edition cancels and replaces the second edition published in 2007. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) reverse-blocking IGBT and its related technical contents have been added;
b) reverse-conducting IGBT and its related technical contents have been added;
c) some parts of the previous edition have been amended, combined or deleted.
– 8 – IEC 60747-9:2019 © IEC 2019
The text of this International Standard is based on the following documents:
FDIS Report on voting
47E/675/FDIS 47E/684/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60747 series, published under the general title: Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
1 Scope
This part of IEC 60747 specifies product specific standards for terminology, letter symbols,
essential ratings and characteristics, verification of ratings and methods of measurement for
insulated-gate bipolar transistors (IGBTs).
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 61340 (all parts), Electrostatics
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1 General terms
3.1.1
insulated-gate bipolar transistor
IGBT
transistor having a conductive channel and one PN junction in the forward direction and
another PN junction in the reverse direction, the current flowing through the channel and the
junction being controlled by an electric field resulting from a voltage applied between the gate
and emitter terminals
Note 1 to entry: With collector-emitter voltage applied, the collector side PN junction is forward biased.
Note 2 to entry: This note applies to the French language only.
3.1.2
N-channel IGBT
IGBT that has one or more N-type conduction channels
[SOURCE: IEC 60050-521:2002, 521-04-56, modified – reworded for IGBT.]
– 10 – IEC 60747-9:2019 © IEC 2019
3.1.3
P-channel IGBT
IGBT that has one or more P-type conduction channels
[SOURCE: IEC 60050-521:2002, 521-04-57, modified – reworded for IGBT.]
3.1.4
collector terminal
collector
C
for an N-channel (a P-channel) IGBT, the terminal to (from) which the collector current flows
from (to) the external circuit
3.1.5
emitter terminal
emitter
E
for an N-channel (a P-channel) IGBT, terminal from (to) which the collector current flows to
(from) the external circuit
3.1.6
gate terminal
gate
G
for an N-channel (a P-channel) IGBT, terminal to which a voltage is applied against the
emitter terminal in order to control the collector current
3.1.7
reverse-blocking IGBT
RB-IGBT
IGBT which, for negative collector-emitter voltage, exhibits a reverse blocking state with a
monolithic device structure
Note 1 to entry: This note applies to the French language only.
3.1.8
reverse-conducting IGBT
RC-IGBT
IGBT which, for negative collector-emitter voltage, conducts large currents at voltages
comparable in magnitude to the forward on-state voltage with monolithic device structure
Note 1 to entry: This note applies to the French language only.
3.2 Terms related to ratings and characteristics, voltages and currents
3.2.1
collector-emitter voltage
voltage between collector and emitter
3.2.2
collector-emitter voltage with gate-emitter short-circuited
V
CES
collector-emitter voltage at which the collector current has a specified low (absolute) value
with the gate-emitter short-circuited
3.2.3
collector-emitter sustaining voltage
V
CE*sus
collector-emitter breakdown (self-clamping) voltage at relatively high values of collector
current where the voltage is relatively insensitive to changes in collector current, for a
specified termination between gate and emitter terminals
Note 1 to entry: The specified termination between gate and emitter terminals is indicated in the letter symbol by
the third subscript ‘*’; see 4.2 of IEC 60747-7:2010.
3.2.4
collector-emitter breakdown voltage
V
(BR)CES
voltage between collector and emitter above which the collector current rises steeply, with
gate to emitter short-circuited
3.2.5
collector-emitter saturation voltage
V
CEsat
collector-emitter voltage under conditions of gate-emitter voltage at which the collector current
is essentially independent of the gate-emitter voltage
3.2.6
gate-emitter voltage
voltage between gate and emitter
3.2.7
gate-emitter threshold voltage
V
GE(th)
gate-emitter voltage at which the collector current has a specified low (absolute) value
3.2.8
electrostatic discharge voltage
voltage that can be applied to the gate terminal without destruction of the isolation layer
3.2.9
reverse voltage
V
R
value of the voltage applied to an IGBT in the reverse collector-
emitter direction
3.2.10
reverse-conducting voltage
V
RC
value of the voltage which results from the flow of current in the
reverse collector-emitter direction
Note 1 to entry: Where no ambiguity arises, V or V may be used.
F EC
3.2.11
collector cut-off current
I
CE
collector current at a specific collector-emitter voltage below the breakdown region and gate
off-state
3.2.12
collector current
I
C
direct current that is switched (controlled) by the IGBT
– 12 – IEC 60747-9:2019 © IEC 2019
3.2.13
tail current
I
CZ
collector current during the tail time
3.2.14
gate leakage current
gate-emitter leakage current
I
GES
leakage current into the gate terminal at a specified gate-emitter voltage with the collector
terminal short-circuited to the emitter terminal
3.2.15
reverse current
I
R
value of the current flowing through the IGBT when the specified
reverse collector-emitter voltage is applied
3.2.16
reverse-conducting current
I
RC
total conductive current flowing through the IGBT when the
collector-emitter reverse voltage is applied
Note 1 to entry: Where no ambiguity arises, I or I may be used.
F E
3.2.17
reverse recovery current
I
rr
reverse current that occurs during the reverse recovery time
Note 1 to entry: For the peak value of the reverse recovery current during the reverse recovery time, only the
letter symbol I may be used.
rrm
3.2.18
forward recovery current
I
fr
forward current that occurs during the forward recovery time
Note 1 to entry: For the peak value of the forward recovery current during the forward recovery time, only the
letter symbol I may be used.
frm
3.2.19
safe operating area
SOA
collector current versus collector-emitter voltage where the IGBT is able to turn-on and turn-
off without failure
Note 1 to entry: This note applies to the French language only.
3.2.19.1
forward bias safe operating area
FBSOA
collector current versus collector-emitter voltage where the IGBT is able to turn-on and is able
to be on-state without failure
Note 1 to entry: This note applies to the French language only.
3.2.19.2
reverse bias safe operating area
RBSOA
collector current versus collector-emitter voltage where the IGBT is able to turn-off without
failure
Note 1 to entry: RBSOA is not only for repetitive peak collector current but also for short-circuit conditions.
Note 2 to entry: This note applies to the French language only.
3.2.19.3
short-circuit safe operating area
SCSOA
short-circuit duration and collector-emitter voltage where the IGBT is able to turn-on and turn-
off without failure
Note 1 to entry: This note applies to the French language only.
3.3 Terms related to ratings and characteristics
3.3.1
input capacitance
C
ies
capacitance between the gate and emitter terminals with the collector terminal short-circuited
to the emitter terminal for alternating current
3.3.2
output capacitance
C
oes
capacitance between the collector and emitter terminals with the gate terminal short-circuited
to the emitter terminal for alternating current
3.3.3
reverse transfer capacitance
C
res
capacitance between the collector and gate terminals
3.3.4
gate charge
Q
G
charge required to raise the gate-emitter voltage from a specified low to a specified high level
3.3.5
internal gate resistance
r
g
internal equivalent series resistance between the gate and the gate terminal
Note 1 to entry: Where no ambiguity arises, R may be used.
Gint
3.3.6
turn-on energy
E
on
energy dissipated inside the IGBT during the turn-on of a single collector current pulse
Note 1 to entry: The corresponding turn-on power dissipation under periodic pulse conditions is obtained by
multiplying E by the pulse frequency.
on
– 14 – IEC 60747-9:2019 © IEC 2019
3.3.7
turn-off energy
E
off
energy dissipated inside the IGBT during the turn-off time plus the tail time of a single
collector current pulse
Note 1 to entry:
...
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