IEC 60747-9:2007

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

Dispositifs à semiconducteurs - Dispositifs discrets - Partie 9: Transistors bipolaires à grille isolée (IGBT)

La présente partie de la CEI 60747 spécifie la terminologie, les symboles littéraux, les valeurs limites et caractéristiques essentielles, la vérification des valeurs limites ainsi que les méthodes de mesure pour les transistors bipolaires à grille isolée (IGBT, insulated-gate bipolar transistors). Les modifications principales par rapport à l'édition précédente sont principalement de nature éditoriale.

General Information

• Status: Published
• Publication Date: 25-Sep-2007
• ICS: 31.080.01 - Semiconductor devices in general
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: DELPUB - Deleted Publication
• Completion Date: 13-Nov-2019

Relations

• Revises: IEC 60747-9:1998 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• Effective Date: 05-Sep-2023
• Revised: IEC 60747-9:2019 - Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-9:1998/AMD1:2001 - Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-9
Edition 2.0 2007-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 9: Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 9: Transistors bipolaires à grille isolée (IGBT)

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IEC 60747-9
Edition 2.0 2007-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 9: Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 9: Transistors bipolaires à grille isolée (IGBT)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XA
CODE PRIX
ICS 31.080.01; 31.080.30 ISBN 2-8318-9321-6

– 2 – 60747-9 © IEC:2007
CONTENTS
FOREWORD.5

1 Scope.7

2 Normative references .7

3 Terms and definitions .7

3.1 Graphical symbol of IGBT.7

3.2 General terms .8

3.3 Terms related to ratings and characteristics; voltages and currents.8
3.4 Terms related to ratings and characteristics; other characteristics.10
4 Letter symbols.12
4.1 General .12
4.2 Additional general subscripts.12
4.3 List of letter symbols .13
5 Essential ratings and characteristics.14
5.1 Ratings (limiting values) .14
5.2 Characteristics .15
6 Measuring methods .17
6.1 General .17
6.2 Verification of ratings (limiting values) .17
6.3 Methods of measurement .26
7 Acceptance and reliability.45
7.1 General requirements.45
7.2 Specific requirements.45
7.3 Type tests and routine tests .48

Annex A (normative) Measuring method for collector-emitter breakdown voltage .50
Annex B (normative) Measuring method for inductive load turn-off current under
specified conditions .52
Annex C (normative) Forward biased safe operating area (FBSOA) .54
Annex D (normative) Case non-rupture .58

Bibliography.59

Figure 1 – Circuit for measuring the collector-emitter voltages V , V , V .18
CES CER CEX
Figure 2 – Circuit for testing the gate-emitter voltage ±V .19
GES
Figure 3 – Circuit for measuring collector current.20
Figure 4 – Circuit for measuring peak collector current .21
Figure 5 – Test circuit of reverse safe operating area (RBSOA) .22
Figure 6 – Waveforms of gate-emitter voltage V and collector current I during
GE C
turn-off.22
Figure 7 – Circuit for testing safe operating pulse width at load short circuit (SCSOA1) .23
Figure 8 – Waveforms of gate-emitter voltage V , collector current I and voltage
GE C
V during load short-circuit condition SCSOA1 .24
CE
Figure 9 – Short-circuit safe operating area 2 (SCSOA2) .25

60747-9 © IEC:2007 – 3 –
Figure 10 – Waveforms during SCSOA2 .25

Figure 11 – Circuit for measuring the collector-emitter sustaining voltage V .26

CE*sus
Figure 12 – Operating locus of the collector current .27

Figure 13 – Circuit for measuring the collector-emitter saturation voltage V .28
CEsat
Figure 14 – Basic circuit for measuring the gate-emitter threshold voltage .29

Figure 15 – Circuit for measuring the collector cut-off current .30

Figure 16 – Circuit for measuring the gate leakage current .31

Figure 17 – Circuit for measuring the input capacitance.32

Figure 18 – Circuit for measuring the output capacitance.33
Figure 19 – Circuit for measuring the reverse transfer capacitance .34
Figure 20 – Circuit for measuring the gate charge.35
Figure 21 – Basic gate charge waveform .35
Figure 22 – Circuit for measuring the short-circuit internal gate resistance.36
Figure 23 – Circuit for measuring turn-on times and energy .37
Figure 24 – Waveforms during turn-on times.38
Figure 25 – Circuit for measuring turn-off times and energy .39
Figure 26 – Waveforms during turn-off times.39
Figure 27 – Circuit for measuring the variation with temperature of the collector-
emitter voltage V at a low measuring current I and for heating up the IGBT by a
CE C1
high current I .41
C2
Figure 28 – Typical variation of the collector-emitter voltage V at a low measuring
CE
current I with the case temperature T (when heated from outside, i.e. T = T ) .42
C1 c c vj
Figure 29 – Circuit for measuring thermal resistance and transient thermal impedance:
method 2 .43
Figure 30 – Typical variation of the gate-emitter threshold voltage V at a low
GE(th)
measuring current I with the case temperature T (when heated from the outside, i.e.
C2 c
T = T ) .44
c vj
Figure 31 – I , V and T with time .45
C GE c
Figure 32 – Circuit for high-temperature blockings .46
Figure 33 – Circuit for high-temperature gate bias .47
Figure 34 – Circuit for intermittent operating life .47
Figure 35 – Expected number of cycles versus temperature rise ΔT .48
vj
Figure A.1 – Circuit for testing the collector-emitter breakdown voltage .50

Figure B.1 – Measuring circuit for inductive load turn-off current.52
Figure B.2 – Waveforms of collector current I and collector voltage V during turn-off .52
C CE
Figure C.1 – Test circuit of forward biased safe operating area (method 1) .54
Figure C.2 – Typical ΔV versus collector-emitter voltage V characteristics.55
CE CE
Figure C.3 – Typical forward biased safe operating area.55
Figure C.4 – Circuit testing forward biased safe operating area (method 2).56
Figure C.5 – Latching mode operation waveforms.57
Figure C.6 – Latching mode I-V characteristic.57

– 4 – 60747-9
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