IEC 60747-5-4:2022
(Main)Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
IEC 60747-5-4:2022(E) specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:
References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
Emission angle is changed to radiation angle in 3.3.2;
Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
Spectral linewidth is added to Table 1 in Clause 4;
Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
Reference document for the lifetime in 5.4 is amended;
Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.
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IEC 60747-5-4 ®
Edition 2.0 2022-04
INTERNATIONAL
STANDARD
Semiconductor devices –
Part 5-4: Optoelectronic devices – Semiconductor lasers
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IEC 60747-5-4 ®
Edition 2.0 2022-04
INTERNATIONAL
STANDARD
Semiconductor devices –
Part 5-4: Optoelectronic devices – Semiconductor lasers
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01; 31.260 ISBN 978-2-8322-1100-7
– 2 – IEC 60747-5-4:2022 © IEC 2022
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 Physical concepts . 8
3.2 Types of devices . 9
3.3 General terms . 9
3.4 Terms related to ratings and characteristics . 10
3.4.1 Switching times . 10
3.4.2 Output and current characteristics . 12
3.5 Spatial profiles and spectral characteristics . 15
4 Essential rating and characteristics . 15
4.1 Type . 15
4.2 Semiconductor . 15
4.2.1 Material . 15
4.2.2 Structure . 15
4.3 Details of outline drawing and encapsulation. 16
4.4 Limiting values (absolute maximum ratings over the operating temperature
range, unless otherwise stated) . 16
4.5 Electrical and optical characteristics . 16
4.6 Supplementary information . 18
5 Measurement methods . 18
5.1 Power measurement . 18
5.2 Output stability . 18
5.2.1 Relative intensity noise . 18
5.2.2 Carrier-to-noise ratio . 18
5.2.3 Output power stability . 20
5.2.4 Output energy stability . 20
5.2.5 Temporal pulse shape . 20
5.3 Time domain profile . 20
5.3.1 Switching times . 20
5.3.2 Small signal cut-off frequency (f ) . 22
c
5.4 Lifetime . 22
5.5 Optical characteristics of the laser beam . 23
5.5.1 Polarization . 23
5.5.2 Half-intensity angle θ and 1/e -intensity angle θ 2 . 23
1/2 1/e
5.5.3 Half-intensity width D and 1/e -intensity width D 2 . 25
1/2 1/e
5.5.4 Spectral characteristics and other spatial profile . 26
Annex A (informative) Reference list of technical terms and definitions related to
spatial profile and spectral characteristics . 27
Annex B (informative) Reference list of measurement methods related to spatial
profile and spectral characteristics . 31
Annex C (informative) Reference list of technical terms and definitions, and
measurement methods, related to power measurement and lifetime . 32
Bibliography . 33
Figure 1 – Example of the device with window but without lens . 10
Figure 2 – Switching times . 12
Figure 3 – Threshold current of a laser diode . 14
Figure 4 – Basic circuit diagram . 19
Figure 5 – Basic circuits diagram . 21
Figure 6 – Typical pulse response diagram . 22
Figure 7 – Half-intensity angle . 23
Figure 8 – Relationship between the specified plane and the mechanical reference
plane . 23
Figure 9 – Basic measurement setup diagram . 24
Figure 10 – Measuring arrangement for D and D 2 . 25
1/2 1/e
Table 1 – Electrical and optical characteristics . 17
– 4 – IEC 60747-5-4:2022 © IEC 2022
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 5-4: Optoelectronic devices –
Semiconductor lasers
FOREWORD
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IEC 60747-5-4 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
This second edition cancels and replaces the first edition published in 2006. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) References for the terms and definitions related to the lighting area, IEC 60050-845, are
revised based on IEC 60050-845:2020;
b) Emission angle is changed to radiation angle in 3.3.2;
c) Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-
521:2002;
d) Spectral linewidth is added to Table 1 in Clause 4;
e) Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
f) Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
g) Precaution against the equipment used for carrier-to-noise ratio measurement is added in
5.2.2;
h) Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of
the first edition is delete
...
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