Surface chemical analysis — Secondary ion mass spectrometry — Method for determining yield volume in argon cluster sputter depth profiling of organic materials

This document specifies a method for measuring and reporting argon cluster sputtering yield volumes of a specific organic material. The method requires one or more test samples of the specified material as a thin, uniform film of known thickness between 50 and 1 000 nanometres on a flat substrate which has a different chemical composition to the specified material. This document is applicable to test samples in which the specified material layer has homogeneous composition in depth and is not applicable if the depth distribution of compounds in the specified material is inhomogeneous. This document is applicable to instruments in which the sputtering ion beam irradiates the sample using a raster to ensure a constant ion dose over the analysis area.

Analyse chimique des surfaces — Spectrométrie de masse des ions secondaires — Méthode de détermination du rendement volumique dans le cadre du profilage en profondeur de matériaux organiques par pulvérisation d'argon en grappe

General Information

Status
Published
Publication Date
09-May-2019
Current Stage
9020 - International Standard under periodical review
Start Date
15-Apr-2024
Completion Date
15-Apr-2024
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ISO 22415:2019 - Surface chemical analysis -- Secondary ion mass spectrometry -- Method for determining yield volume in argon cluster sputter depth profiling of organic materials
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Standards Content (Sample)

INTERNATIONAL ISO
STANDARD 22415
First edition
2019-05
Surface chemical analysis —
Secondary ion mass spectrometry
— Method for determining yield
volume in argon cluster sputter depth
profiling of organic materials
Analyse chimique des surfaces — Spectrométrie de masse des ions
secondaires — Méthode de détermination du rendement volumique
dans le cadre du profilage en profondeur de matériaux organiques
par pulvérisation d'argon en grappe
Reference number
ISO 22415:2019(E)
©
ISO 2019

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ISO 22415:2019(E)

COPYRIGHT PROTECTED DOCUMENT
© ISO 2019
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting
on the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address
below or ISO’s member body in the country of the requester.
ISO copyright office
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Phone: +41 22 749 01 11
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Email: copyright@iso.org
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Published in Switzerland
ii © ISO 2019 – All rights reserved

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ISO 22415:2019(E)

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Symbols (and abbreviated terms) . 1
5 Requirements . 3
5.1 Test samples . 3
5.2 Sputtering ion source . 3
5.3 Analysis conditions . 4
6 Data Acquisition . 5
6.1 Analysis. 5
6.2 Minimum data requirements . 6
6.3 Data quality . 6
7 Calculation of sputtering yield volume . 6
7.1 Introduction . 6
7.2 Determination of sputtering yield volume for a single layer profile . 7
7.2.1 Introduction .
...

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